JP2008211237A - 半導体装置に配設される中継部材及び半導体装置 - Google Patents
半導体装置に配設される中継部材及び半導体装置 Download PDFInfo
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- JP2008211237A JP2008211237A JP2008108678A JP2008108678A JP2008211237A JP 2008211237 A JP2008211237 A JP 2008211237A JP 2008108678 A JP2008108678 A JP 2008108678A JP 2008108678 A JP2008108678 A JP 2008108678A JP 2008211237 A JP2008211237 A JP 2008211237A
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- wiring
- bonding pad
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Abstract
【解決手段】半導体装置に配設される中継部材50は、第1の端子51と第2の端子52とを備える。第1の端子51に接続される第1端子用配線56の端部及び第2の端子に接続される第2端子用配線57の端部のうち少なくとも1つにより連結部60が形成される。少なくとも前記連結部に接続部材61が形成され、第1の端子51と第2の端子52が接続される。
【選択図】図4
Description
更に、上述の例のほか、中継部材を半導体チップと略同一面上に並べて搭載し、両者をワイヤボンディングしている構造(特許文献1及び2参照)、半導体チップよりも小さい中継部材を当該半導体チップの上に搭載している構造(特許文献3及び4参照)、中継部材を半導体チップの下に配設している構造(特許文献5参照)、積層された複数の半導体チップのうち、上にある半導体チップと中継部材とが並べられて配置されている構造(特許文献6参照)、或いは積層された複数の半導体チップの間に中継部材を配設している構造(特許文献7及び8参照)を備えた半導体装置が知られている。
当該中継部材は、当該中継部材が配設される前記半導体装置に配設される半導体素子と同一の材料から成り、当該中継部材は、第1の端子と第2の端子とを備え、前記第1の端子に接続される第1端子用配線の端部及び前記第2の端子に接続される第2端子用配線の端部のうち少なくとも1つにより連結部が形成され、少なくとも前記連結部に接続部材が形成されることにより、前記第1の端子と前記第2の端子が接続され、
前記第1端子用配線及び前記第2端子用配線は、前記中継部材の一主面上の同一層に形成され、前記接続部材が、スタッドバンプ又はボンディングワイヤの少なくとも一方を含むことを特徴とする中継部材が提供される。
本発明に於ける中継部材は、半導体装置内に配設され、一つの半導体チップ(半導体素子)と、他の半導体チップ、配線基板、又はリードフレームとの間を相互に接続するボンディングワイヤ等による配線を中継する部材である。
当該ボンディングパッド52B’へは、ボンディングワイヤ54は接続されない。
次に、半導体装置における、上述の構造を備えた中継部材の搭載構成について説明する。図30は、本発明の実施形態に係る中継部材を備えた半導体装置の第1の例を示す図であり、当該半導体装置の断面図である。
(付記1)
半導体装置に配設される中継部材であって、
当該中継部材は、第1の端子と、配線によって前記第1の端子と接続している複数の第2の端子とを備え、
前記第1の端子に接続している前記配線は、途中で分岐して、前記第2の端子の夫々に接続していることを特徴とする中継部材。
(付記2)
半導体装置に配設される中継部材であって、
当該中継部材は、第1の端子と第2の端子とを備え、
前記第1の端子に接続される第1端子用配線の端部及び前記第2の端子に接続される第2端子用配線の端部のうち少なくとも1つにより連結部が形成され、
少なくとも前記連結部に接続部材が形成されることにより、前記第1の端子と前記第2の端子が接続されることを特徴とする中継部材。
(付記3)
前記接続部材は、前記連結部と、前記第1の端子又は前記第2の端子とを接続することを特徴とする付記2記載の中継部材。
(付記4)
前記第1端子用配線の前記端部と前記第2端子用配線の前記端部との間に接続配線が形成され、
前記接続配線の一の端部と前記第1端子用配線の前記端部との間及び前記接続配線の他の端部と前記第2端子用配線の前記端部との間に前記接続部材が形成されることにより、前記第1の端子と前記第2の端子が接続されることを特徴とする付記2又は3記載の中継部材。
(付記5)
前記第1端子用配線の前記端部と前記第2端子用配線の前記端部により前記連結部が形成され、
前記接続部材は、スタッドバンプを含むことを特徴とする付記2又は4記載の中継部材。
(付記6)
前記スタッドバンプは、第1乃至第3のスタッドバンプから成り、
前記第1のスタッドバンプは前記第1端子用配線の前記端部に形成され、
前記第2のスタッドバンプは前記第2端子用配線の前記端部に形成され、
前記第3のスタッドバンプは前記第1のスタッドバンプ及び前記第2のスタッドバンプ上に重ねてボンディング形成されることを特徴とする付記5記載の中継部材。
(付記7)
前記第1端子用配線の前記端部と前記第2端子用配線の前記端部により前記連結部が形成され、
前記接続部材は、導電性樹脂を含むことを特徴とする付記2又は4記載の中継部材。
(付記8)
前記接続部材は、ボンディングワイヤを含むことを特徴とする付記2乃至4いずれか一項記載の中継部材。
(付記9)
前記第1の端子又は前記第2の端子にスタッドバンプを形成し、
前記スタッドバンプの上に前記ボンディングワイヤの端部を形成し、
前記ボンディングワイヤの前記端部の上に、前記第1の端子又は前記第2の端子と前記半導体装置の他の構成要素とを接続するボンディングワイヤが形成されることを特徴とする付記8記載の中継部材。
(付記10)
当該中継部材の材料は、当該中継部材が形成される前記半導体装置に形成される半導体素子と同一の材料から成ることを特徴とする付記1乃至9いずれか一項記載の中継部材。
(付記11)
前記第1端子用配線又は前記第2端子用配線の上に絶縁膜が形成され、
前記第1端子用配線又は前記第2端子用配線の端部の上に形成されている絶縁膜の一部が開口して開口部を形成し、
当該開口部に、前記絶縁膜よりも高くなるように金属めっき層が形成されていることを特徴とする付記2乃至10いずれか一項記載の中継部材。
(付記12)
少なくとも1つの半導体素子と、配線基板又はリードフレームと、を備えた半導体装置であって、
前記半導体素子と前記配線基板又は前記リードフレームとは中継部材を介して接続され、
前記中継部材は、第1の端子と、第2の端子とを備え、
前記第1の端子に接続される第1端子用配線の端部及び前記第2の端子に接続される第2端子用配線の端部のうち少なくとも1つにより連結部が形成され、
少なくとも前記連結部に接続部材が形成されることにより、前記第1の端子と前記第2の端子が接続されることを特徴とする半導体装置。
(付記13)
前記接続部材は、前記連結部と、前記第1の端子又は前記第2の端子とを接続することを特徴とする付記12記載の中継部材。
(付記14)
前記第1端子用配線の前記端部と前記第2端子用配線の前記端部との間に接続配線が形成され、
前記接続配線の一の端部と前記第1端子用配線の前記端部及び前記接続配線の他の端部と前記第2端子用配線の前記端部との間に前記接続部材が形成されることにより、前記第1の端子と前記第2の端子が接続されることを特徴とする付記12又は13記載の半導体装置。
(付記15)
前記第1端子用配線の前記端部と前記第2端子用配線の前記端部により前記連結部が形成され、
前記接続部材は、スタッドバンプを含むことを特徴とする付記12又は14記載の半導体装置。
(付記16)
前記スタッドバンプは、第1乃至第3のスタッドバンプから成り、
前記第1のスタッドバンプは前記第1端子用配線の前記端部に形成され、
前記第2のスタッドバンプは前記第2端子用配線の前記端部に形成され、
前記第3のスタッドバンプは前記第1のスタッドバンプ及び前記第2のスタッドバンプ上に重ねてボンディング形成されることを特徴とする付記15記載の中継部材。
(付記17)
前記第1端子用配線の前記端部と前記第2端子用配線の前記端部により前記連結部が形成され、
前記接続部材は、導電性樹脂を含むことを特徴とする付記12又は14記載の半導体装置。
(付記18)
前記接続部材は、ボンディングワイヤを含むことを特徴とする付記12乃至14いずれか一項記載の半導体装置。
(付記19)
前記第1の端子又は前記第2の端子にスタッドバンプを形成し、
前記スタッドバンプの上に前記ボンディングワイヤの端部を形成し、
前記ボンディングワイヤの上に、前記第1の端子又は前記第2の端子と前記配線基板又は前記リードフレームとを接続するボンディングワイヤが形成されることを特徴とする付記18記載の中継部材。
(付記20)
前記第1の端子及び前記第2の端子は複数形成されており、
前記第1の端子の配列方向と前記第2の端子の配列方向は略平行であり、
前記第1の端子の配列順序と、前記第1の端子に対応する前記第2の端子の配列順序が異なることを特徴とする付記12乃至19いずれか一項記載の半導体装置。
6、8 半導体チップ
10 接着剤
50、500、600、700、750、710、720 中継部材
51 第1のボンディングパッド
52 第2のボンディングパッド
55、56、57、58、70、80、90、100、150、525、535 配線
60、110、115、120、125、510、530、540 連結部
61、115、155、615 ボンディングワイヤ
130 スタッドバンプ
900、910、920、930、940、950、960、970 半導体装置
557 インナーリード部
Claims (7)
- 半導体装置に配設される中継部材であって、
当該中継部材は、当該中継部材が配設される前記半導体装置に配設される半導体素子と同一の材料からなり、
当該中継部材は、第1の端子と第2の端子とを備え、
前記第1の端子に接続される第1端子用配線の端部及び前記第2の端子に接続される第2端子用配線の端部のうち少なくとも1つにより連結部が形成され、
少なくとも前記連結部に接続部材が形成されることにより、前記第1の端子と前記第2の端子が接続され、
前記第1端子用配線及び前記第2端子用配線は、前記中継部材の一主面上の同一層に形成され、
前記接続部材が、スタッドバンプ又はボンディングワイヤの少なくとも一方を含むことを特徴とする中継部材。 - 前記接続部材は、前記連結部と、前記第1の端子又は前記第2の端子とを接続することを特徴とする請求項1記載の中継部材。
- 前記第1端子用配線の前記端部と前記第2端子用配線の前記端部との間に接続配線が形成され、
前記接続配線の一の端部と前記第1端子用配線の前記端部との間及び前記接続配線の他の端部と前記第2端子用配線の前記端部との間に前記接続部材が形成されることにより、前記第1の端子と前記第2の端子が接続されることを特徴とする請求項1又は2記載の中継部材。 - 前記第1端子用配線の前記端部と前記第2端子用配線の前記端部により前記連結部が形成されることを特徴とする請求項1乃至3いずれか一項記載の中継部材。
- 前記接続部材は、ボンディングワイヤを含み、
前記第1の端子又は前記第2の端子にスタッドバンプを形成し、
前記スタッドバンプの上に前記ボンディングワイヤの端部を形成し、
前記ボンディングワイヤの前記端部の上に、前記第1の端子又は前記第2の端子と前記半導体装置の他の構成要素とを接続するボンディングワイヤが形成されることを特徴とする請求項1乃至3いずれか一項記載の中継部材。 - 複数の半導体素子と、
前記半導体素子と配線基板とを接続する中継部材と、を備え、
前記複数の半導体素子は前記配線基板の上に重ねて配設され、
前記中継部材は、前記複数の半導体素子の間に配設され、
前記中継部材と前記半導体素子及び前記配線基板とが、ボンディングワイヤにより接続され、
前記中継部材は、請求項1乃至5いずれか一項記載の中継部材であることを特徴とする半導体装置。 - 少なくとも1つの半導体素子と、配線基板又はリードフレームと、を備えた半導体装置であって、
前記半導体素子と前記配線基板又は前記リードフレームとは中継部材を介して接続され、
当該中継部材は、当該中継部材が配設される前記半導体装置に配設される半導体素子と同一の材料からなり、
前記中継部材は、第1の端子と、第2の端子とを備え、
前記第1の端子に接続される第1端子用配線の端部及び前記第2の端子に接続される第2端子用配線の端部のうち少なくとも1つにより連結部が形成され、
少なくとも前記連結部に接続部材が形成されることにより、前記第1の端子と前記第2の端子が接続され、
前記第1端子用配線及び前記第2端子用配線は、前記中継部材の一主面上の同一層に形成され、
前記接続部材が、スタッドバンプ又はボンディングワイヤの少なくとも一方を含むことを特徴とする半導体装置。
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WO2019202687A1 (ja) * | 2018-04-18 | 2019-10-24 | 三菱電機株式会社 | 半導体モジュール |
WO2023162501A1 (ja) * | 2022-02-22 | 2023-08-31 | 株式会社デンソー | 半導体装置 |
WO2024079813A1 (ja) * | 2022-10-12 | 2024-04-18 | 三菱電機株式会社 | 半導体装置 |
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WO2024079813A1 (ja) * | 2022-10-12 | 2024-04-18 | 三菱電機株式会社 | 半導体装置 |
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