JP2022536930A - 基板をパッケージングするための平坦化方法 - Google Patents
基板をパッケージングするための平坦化方法 Download PDFInfo
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/12—Lapping plates for working plane surfaces
- B24B37/14—Lapping plates for working plane surfaces characterised by the composition or properties of the plate materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
- B24B21/04—Machines or devices using grinding or polishing belts; Accessories therefor for grinding plane surfaces
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Wrappers (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Abstract
Description
分野
本開示の実施形態は、概して、基板上の表面及び基板上に形成された層上の表面の平坦化に関する。より詳細には、本開示の実施形態は、高度なパッケージング用途のための基板上の表面の平坦化に関する。
化学機械平坦化(CMP)は、基板上に堆積されている材料の層を平坦化又は研磨するために高密度集積回路の製造において通常使用される1つのプロセスである。化学的機械的平坦化及び研磨は、粗面、凝集した材料、結晶格子の損傷、引っかき傷、及び汚染された層若しくは材料などの望ましくない表面トポグラフィー並びに表面欠陥を除去するのに有用である。化学的機械的平坦化は、フィーチャを埋めるために堆積された余分な材料を除去することによって基板上にフィーチャを形成し、その後のパターン化操作のために均一な表面を提供するのにも役立つ。
本開示の実施形態は、概して、基板上の表面及び基板上に形成された層上の表面の平坦化に関する。より詳細には、本開示の実施形態は、ポリマー材料層の表面などの高度なパッケージング用途用の基板上の表面の平坦化に関する。
本開示の上記の特徴を詳細に理解できるように、上記で簡単に要約された実装のより具体的な説明は、実装を参照することによって得ることができ、そのいくつかは添付の図面に示されている。しかしながら、本開示は他の等しく有効な実施形態も許容し得るため、添付の図面は、本開示の典型的な実施形態のみを示しており、従って、本開示の範囲を限定すると見なすべきではないことに留意されたい。
本開示の実施形態は、概して、基板上の表面及び基板上に形成された層上の表面の平坦化に関する。より詳細には、本開示の実施形態は、ポリマー材料層の表面など、高度なパッケージング用途用の基板上の表面の平坦化に関する。一実施形態では、本方法は、第1の研磨プロセス中に粉砕スラリの存在下で研磨表面に対して基板表面を機械的に研磨して、基板上に形成された材料の一部を除去すること;及び次に、第2の研磨プロセス中に研磨スラリの存在下で研磨表面に対して基板表面を化学的機械的に研磨して、第1の研磨プロセスによって引き起こされた粗さ又は不均一性を低減することを含む。
Claims (20)
- 基板の平坦化のための方法であって:
研磨装置内にポリマー材料を含む基板を配置することと;
基板の表面を第1の研磨プロセスに曝すことであって:
粉砕スラリを前記研磨装置の研磨パッドに供給することを含み、前記粉砕スラリは:
約1.2μmと約53μmとの間のグリットサイズを有する第1の複数のコロイド粒子;
非イオン性ポリマー分散剤;及び
水性溶媒を含む、
前記基板の表面を前記第1の研磨プロセスに曝すことと;
前記基板の表面を第2の研磨プロセスに曝すことであって:
研磨スラリを前記研磨装置の前記研磨パッドに供給することを含み、前記研磨スラリは:
約25nmと約500nmとの間のグリットサイズを有する第2の複数のコロイド粒子を含む、
前記基板の表面を前記第2の研磨プロセスに曝すことと
を含む、方法。 - 前記第1の複数のコロイド粒子が、シリカ、アルミナ、セリア、酸化鉄、ジルコニア、ダイヤモンド、窒化ホウ素、チタニア、及び炭化ケイ素からなる群から選択される材料を含む、請求項1に記載の方法。
- 前記粉砕スラリ中の前記第1の複数のコロイド粒子の重量パーセントが約2%と約20%との間である、請求項2に記載の方法。
- 前記非イオン性ポリマー分散剤が、ポリビニルアルコール、エチレングリコール、グリセリン、ポリエチレングリコール、ポリプロピレングリコール、及びポリビニルピロリドンからなる群から選択される、請求項1に記載の方法。
- 前記非イオン性ポリマー分散剤が、約1:1と約1:4v/vとの間の分散剤:水性溶媒の比で水性溶媒と混合される、請求項4に記載の方法。
- 前記ポリマー材料が、ポリイミド、ポリアミド、パリレン、及びシリコーンからなる群から選択される、請求項1に記載の方法。
- 前記第2の複数のコロイド粒子が、約25nmと約250nmとの間のグリットサイズを有する、請求項1に記載の方法。
- 前記第2の複数のコロイド粒子が、シリカ、アルミナ、セリア、酸化鉄、ジルコニア、チタニア、及び炭化ケイ素からなる群から選択される材料を含む、請求項7に記載の方法。
- 前記第2の複数のコロイド粒子が、前記第1の複数のコロイド粒子の材料とは異なる材料から形成される、請求項8に記載の方法。
- 前記研磨スラリ中の前記第2の複数のコロイド粒子の重量パーセントが約1%と約25%との間である、請求項9に記載の方法。
- 前記研磨スラリが、水、アルミナ、及び水酸化カリウムのうちの1つ又は複数をさらに含む、請求項10に記載の方法。
- 基板の平坦化のための方法であって:
基板を第1の研磨プロセスに曝すことであって;
粉砕スラリで前記基板を研磨することを含み、前記粉砕スラリは、約1μmと約55μmとの間のグリットサイズを有する第1の複数のコロイド粒子を含む、前記基板を前記第1の研磨プロセスに曝すことと;
前記基板の表面を第2の研磨プロセスに曝すことであって:
研磨スラリで前記基板を研磨することを含み、前記研磨スラリは、約20nmと約500nmとの間のグリットサイズを有する第2の複数のコロイド粒子を含む、前記基板の表面を前記第2の研磨プロセスに曝すことと
を含む方法。 - 前記第1の複数のコロイド粒子が、シリカ、アルミナ、セリア、酸化鉄、ジルコニア、ダイヤモンド、窒化ホウ素、チタニア、及び炭化ケイ素からなる群から選択される材料を含む、請求項12に記載の方法。
- 前記粉砕スラリ中の前記第1の複数のコロイド粒子の重量パーセントが約2%と約20%との間である、請求項13に記載の方法。
- 前記粉砕スラリが、ポリビニルアルコール、エチレングリコール、グリセリン、ポリエチレングリコール、ポリプロピレングリコール、及びポリビニルピロリドンからなる群から選択される非イオン性ポリマー分散剤をさらに含む、請求項14に記載の方法。
- 前記第2の複数のコロイド粒子が、シリカ、アルミナ、セリア、酸化鉄、ジルコニア、ダイヤモンド、窒化ホウ素、チタニア、及び炭化ケイ素からなる群から選択される材料を含む、請求項13に記載の方法。
- 前記第2の複数のコロイド粒子が、前記第1の複数のコロイド粒子の材料とは異なる材料を含む、請求項16に記載の方法。
- 前記研磨スラリ中の前記第2の複数のコロイド粒子の重量パーセントが約1%と約25%との間である、請求項12に記載の方法。
- 前記基板が、ポリイミド、ポリアミド、パリレン、又はシリコーンを含むポリマー基板である、請求項12に記載の方法。
- 基板の平坦化のための方法であって:
研磨装置に、ポリイミド、ポリアミド、パリレン、及びシリコーンからなる群から選択されるポリマー材料を含む基板を配置することと;
基板の表面を第1の研磨プロセスに曝すことであって:
粉砕スラリを前記研磨装置の研磨パッドに供給することを含み、前記研磨パッドは前記基板の表面に押し付けられ、毎分約50回転と毎分約100回転との間の速度で回転され、前記粉砕スラリは:
約1.2μmと約20μmとの間のグリットサイズ、及び約2%と約20%との間の重量パーセントを有する第1の複数のコロイド粒子;
ポリビニルアルコール、エチレングリコール、グリセリン、ポリエチレングリコール、ポリプロピレングリコール、及びポリビニルピロリドンからなる群から選択される非イオン性ポリマー分散剤;及び
水性媒体を含む、
前記基板の表面を前記第1の研磨プロセスに曝すことと;
前記基板の表面を第2の研磨プロセスに曝すことであって:
研磨スラリを前記研磨装置の前記研磨パッドに供給することであって、前記研磨スラリは:
約25nmと約200nmとの間のグリットサイズ及び約1%と約25%との間の重量パーセントを有する第2の複数のコロイド粒子を含む、
前記研磨スラリを前記研磨装置の前記研磨パッドに供給すること;及び
前記第1及び前記第2の複数のコロイド粒子をリサイクルして、前記粉砕スラリ及び前記研磨スラリを再形成すること
を含む前記基板の表面を前記第2の研磨プロセスに曝すことと
を含む、方法。
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