TW202246451A - 封裝基板的平面化方法 - Google Patents
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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Abstract
本揭露案的實施例大致關於平坦化基板上的表面及在基板上形成的層上的表面。更具體而言,本揭露案的實施例關於平坦化基板上的表面用於先進封裝應用,例如聚合材料層的表面。在一個實例中,一種方法包括在第一拋光處理期間於研磨漿料的存在下抵靠拋光表面機械研磨基板表面,以移除在基板上形成的材料的一部分;及接著在第二拋光處理期間於拋光漿料的存在下抵靠拋光表面化學機械拋光基板表面,以減少藉由第一拋光處理造成的任何粗糙或非均勻性。
Description
本揭露案的實施例大致關於平坦化基板上的表面及在基板上形成的層上的表面。更具體而言,本揭露案的實施例關於平坦化基板上的表面用於先進封裝應用。
化學機械平坦化(CMP)為在製造高密度積體電路中常使用的一個處理,以平坦化或拋光沉積於基板上的材料層。化學機械平坦化及拋光對移除非所欲表面拓樸及表面缺陷為實用的,例如粗糙表面、結塊的材料、晶格損傷、划痕及污染的層或材料。化學機械平坦化對藉由移除沉積的過量材料以填充特徵,且提供均勻表面用於後續圖案化操作,而在基板上形成特徵亦為實用的。
在傳統CMP技術中,基板載具或固定在載具組件上的拋光頭將基板定位緊固其中而與固定於CMP裝置中平台上的拋光墊接觸。載具組件在基板上提供可控制的負載,即,壓力,以迫使基板抵靠拋光墊。外部驅動力將拋光墊相對於基板移動。因此,CMP裝置在基板及拋光墊的表面之間建立拋光或摩擦運動,同時分散拋光成分或漿料以影響化學活性及機械活性兩者。
近期,歸因於對許多先進封裝應用聚合物的靈活性,聚合材料已增加使用作為製作積體電路的材料層。然而,傳統CMP技術不足以用於聚合材料平坦化,因為與聚合物化學性相關聯的降低的移除速率。因此,聚合材料層的平坦化變成製作先進封裝結構中的限制因素。
因此,本領域中需要改良的拋光聚合材料表面之方法及裝置。
本揭露案的實施例大致關於平坦化基板上的表面及在基板上形成的層上的表面。更具體而言,本揭露案的實施例關於平坦化基板上的表面用於先進封裝應用,例如聚合材料層的表面。
在一個實施例中,提供一種基板平坦化之方法。方法包括將基板定位於拋光裝置中,基板包含聚合材料。將基板表面暴露至第一拋光處理,其中傳送研磨漿料至拋光裝置的拋光墊。研磨漿料包括膠體顆粒,具有介於約1.2µm及約53µm之間的粒度、非離子聚合物分散劑及水性溶劑。接著將基板表面暴露至第二拋光處理,其中傳送研磨漿料至拋光裝置的拋光墊。研磨漿料包括膠體顆粒,具有介於約25nm及約500nm之間的粒度。
本揭露案的實施例大致關於平坦化基板上的表面及基板上形成的層上的表面。更具體而言,本揭露案的實施例關於平坦化基板上的表面用於先進封裝應用,例如聚合材料層之表面。在一個實例中,方法包括在第一拋光處理期間,於研磨漿料的存在下抵靠拋光表面機械研磨基板表面,以移除在基板上形成的材料之部分;及接著在第二拋光處理期間,於拋光漿料的存在下抵靠拋光表面化學機械拋光基板表面,以減少藉由第一拋光處理造成的任何粗糙或不均勻。
在以下說明及第1及2圖中提及某些細節以提供本揭露案各種實例的透徹理解。說明通常與基板平坦化及拋光相關聯的已知結構及系統的其他細節並未在以下揭露案中提及,以避免非必要地模糊各種實例之說明。
圖式中顯示的許多細節、尺寸、角度及其他特徵僅為特定實施例之圖示。因此,其他實施例可具有其他細節、部件、尺寸、角度及特徵而不會悖離本揭露案的精神及範疇。此外,無須以下所述的數個細節而可執行本揭露案的進一步實施例。
此處所述的實施例將參考可使用化學機械拋光系統執行的平坦化處理而於以下說明,例如從美國聖克拉拉市的應用材料公司可取得的REFLEXION
®、REFLEXION® LK™、REFLEXION® LK Prime™及MIRRA MESA
®拋光系統。能夠實行平坦化及拋光處理的其他工具亦可適以從此處所述之實例獲益。此外,可使用實施此處所述的平坦化處理的任何系統以獲利。此處所述的裝置說明為圖示性,且不應考量或解釋為限制此處所述的實施例之範疇。
第1圖圖示可用以平坦化用於先進封裝應用之材料層(例如聚合基板110)的範例化學機械拋光裝置100。通常,拋光墊105使用佈置於拋光墊105及平台102之間的黏著物(例如,壓敏黏著物)緊固至拋光裝置100的平台102。面向平台102及固定於其上的拋光墊105的基板載具108包括彈性隔膜111,配置成施加不同壓力抵靠基板110的不同區域,同時迫使待拋光的基板110抵靠拋光墊105的拋光表面。基板載具108進一步包括環繞基板110的載具環109。
在拋光期間,在載具環109上的下壓力迫使載具環109抵靠拋光墊105,因此避免基板110從基板載具108滑移。基板載具108在中心軸114四周旋轉,同時彈性隔膜211迫使基板110的所欲表面抵靠拋光墊105的拋光表面。平台102以與基板載具108的旋轉方向相反的旋轉方向在平台軸104四周旋轉,同時基板載具108從平台102的中心區域來回掃掠至平台102的外部直徑,以部分減少拋光墊105的非均勻磨耗。如第1圖中圖示,平台102及拋光墊105具有大於待拋光的基板110的表面的表面積之表面積。然而,在某些拋光系統中,拋光墊105具有小於待拋光的基板110的表面的表面積之表面積。終點偵測系統130引導光通過平台開口122朝向基板110,且進一步通過佈置於平台開口122上拋光墊105的光學透射窗特徵106。
在拋光期間,流體116通過定位於平台102上的流體分配器118引入至拋光墊105。通常,流體116為拋光流體、拋光或研磨漿料、清潔流體或其結合。在某些實施例中,流體116為拋光流體,包含pH調節劑及/或化學活性成分,例如氧化劑,以與拋光墊105的磨料一起能夠化學機械拋光且平坦化基板110的材料表面。
第2圖根據此處所述的實施例,為用於平坦化基板的表面之處理200的流程圖。處理200於操作210處藉由將基板定位於拋光裝置(例如,拋光裝置100)而開始。儘管所述及描繪為單一層,基板可包括一或更多材料層及/或形成於其上的結構。舉例而言,基板可包括一或更多金屬層、一或更多介電層、一或更多互連結構、一或更多重新分配結構及/或其他適合的層及/或結構。
在一個範例中,基板包含矽材料,例如結晶矽(例如,Si<100>或Si<111>)、氧化矽、應變矽、矽鍺、摻雜或未摻雜的多晶矽、摻雜或未摻雜的矽晶圓、圖案化或未圖案化的晶圓、絕緣體上矽(SOI)、碳摻雜的氧化矽、氮化矽、摻雜的矽及其他適合的矽材料。在一個範例中,基板包含聚合材料,例如聚醯亞胺、聚醯胺、聚對二甲苯、聚矽氧、環氧樹脂、玻璃纖維增強的環氧模塑化合物、具有陶瓷顆粒佈置於其中的環氧樹脂及其他適合的聚合材料。
進一步,基板可具有各種型態及尺寸。在一個實施例中,基板為圓形基板,具有介於約50mm及約500mm之間的直徑,例如介於約100mm及約400mm之間。舉例而言,基板為圓形基板,具有介於約150mm及約350mm之間的直徑,例如介於約200mm及約300mm之間。在某些實施例中,圓形基板具有約200mm、約300mm或約301mm的直徑。在另一範例中,基板為多邊形基板,具有介於約50mm及約650mm之間的寬度,例如介於約100mm及約600mm之間。舉例而言,基板為多邊形基板,具有介於約200mm及約500mm之間的寬度,例如介於約300mm及約400mm之間。在某些實施例中,基板具有面板形狀,具有橫向尺寸高達約500mm及厚度高達約1mm。在一個實施例中,基板具有介於約0.5mm及約1.5mm之間的厚度。舉例而言,基板為圓形基板,具有介於約0.7mm及約1.4mm之間的厚度,例如介於約1mm及約1.2mm之間,例如約1.1mm。亦考慮其他型態及尺寸。
在操作220處,待平坦化的基板的表面暴露至拋光裝置中的第一拋光處理。利用第一拋光處理以從基板移除材料的所欲厚度。在一個實施例中,第一拋光處理為機械研磨處理,利用供應至拋光裝置的拋光墊的研磨漿料。研磨漿料包括分散在包含分散劑的溶液中的膠體顆粒。在一個實施例中,在研磨漿料中利用的膠體顆粒以磨料材料形成,例如二氧化矽(SiO
2)、氧化鋁(AL
2O
3)、二氧化鈰(CeO
2)、氧化鐵(Fe
2O
3)、氧化鋯(ZrO
2)、金鋼石(C)、氮化硼(BN)及二氧化鈦(TiO
2)。在一個實施例中,膠體顆粒由碳化矽(SiC)形成。
利用於第一拋光處理的膠體顆粒的粒度範圍從約1µm至約55µm,例如介於約1.2µm及約53µm之間。舉例而言,膠體顆粒具有介於約1.2µm及約50µm之間的粒度;介於約1.2µm及約40µm之間;介於約1.2µm及約30µm之間;介於約1.2µm及約20µm之間;介於約1.2µm及約10µm之間;介於約5µm及約50µm之間;介於約5µm及約40µm之間;介於約5µm及約30µm之間;介於約5µm及約20µm之間;介於約5µm及約15µm之間;介於約10µm及約55µm之間;介於約20µm及約55µm之間;介於約30µm及約55µm之間;介於約40µm及約55µm之間;介於約50µm及約55µm之間。增加分散在研磨漿料中膠體顆粒的粒度可增加於機械研磨處理期間從基板可移除材料的速率。
在研磨漿料中膠體顆粒的重量百分比之範圍從約1%至約25%,例如介於約2%及約20%之間。舉例而言,在研磨漿料中膠體顆粒的重量百分比之範圍從約5%至約15%;從約6%至約14%;從約7%至約13%;從約8%至約12%;從約9%至約11%。在一個實施例中,在研磨漿料中膠體顆粒的重量百分比為約10%。
在研磨漿料中分散劑經選擇以增加膠體顆粒的研磨效率。在一個實施例中,分散劑為非離子聚合物分散物,包括但非限於聚乙烯醇(PVA)、乙二醇(EG)、甘油、聚乙二醇(PEG)、聚丙二醇(PPG)及聚乙烯吡咯烷酮(PVP)。在一個範例中,分散劑為具有分子重量高達2000的PEG。舉例而言,分散劑可為PEG 200、PEG 400、PEG 600、PEG 800、PEG 1000、PEG 1500或PEG 2000。分散劑與水或水性溶劑混合,包含的水在約1:1容積/容積(v/v)及約1:4(v/v)的分散劑:水或水性溶劑之比例中。舉例而言,分散劑與水或水性溶劑的混合在約1:2(v/v)的分散劑:水或水性溶劑之比例中。
在某些實施例中,研磨漿料進一步包括pH調節劑,例如氫氧化鉀(KOH)、氫氧化四甲基銨(TMAH)、氫氧化銨(NH
4OH)、硝酸(HNO
3)或類似者。研磨漿料的pH可藉由添加一或更多pH調節劑而調節至所欲等級。
在第一拋光處理期間,基板表面及拋光墊(例如拋光墊105)以小於約每平方英吋15磅(psi)的壓力接觸。從基板移除的材料的所欲厚度可以機械研磨處理實行,具有約10psi或更少的壓力,舉例而言,從約1psi至約10psi。在處理的一個態樣中,基板表面及拋光墊以介於約3psi及約10psi之間的壓力接觸,例如介於約5psi及約10psi之間。增加拋光墊及基板表面接觸的壓力大致增加在第一拋光處理期間從基板可移除的材料的速率。
在一個實施例中,平台以從約每分鐘50轉(rpm)至約100rpm的速度旋轉,且基板載具以從約50rpm至約100rpm的速度旋轉。在處理的一個態樣中,平台以介於約70rpm及約90rpm之間的速度旋轉,且基板載具以介於約70rpm及約90rpm之間的速度旋轉。
如以上所述第一拋光處理期間基板的機械研磨相較於傳統平坦化及拋光處理可達成基板材料強化的移除速率。舉例而言,可達成介於約6µm/min及約10µm/min之間的聚合材料的移除速率。在另一範例中,可達成介於約6µm/min及約12µm/min之間的環氧樹脂材料的移除速率。仍在另一範例中,可達成介於約4µm/min及約6µm/min之間的矽材料的移除速率。
在完成第一拋光處理之後,於操作230處,現在具有減少的厚度的基板的表面在相同拋光裝置中暴露至第二拋光處理。利用第二拋光處理以減少藉由第一拋光處理造成的任何粗糙或非均勻性。在一個實施例中,第二拋光處理為CMP處理,利用具有比參照機械研磨處理所述更細的膠體顆粒的拋光漿料。
在一個實施例中,第二拋光處理利用的膠體顆粒的粒度之範圍從約20nm至約500nm,例如介於約25nm及約300nm之間。舉例而言,膠體顆粒具有介於約25nm及約250nm之間的粒度;介於約25nm及約200nm之間;介於約25nm及約150nm之間;介於約25nm及約100nm之間;介於約25nm及約75nm之間;介於約25nm及約50nm之間;介於約100nm及約300nm之間;介於約100nm及約250nm之間;介於約100nm及約225nm之間;介於約100nm及約200nm之間;介於約100nm及約175nm之間;介於約100nm及約150nm之間;介於約100nm及約125nm之間;介於約150nm及約250nm之間;介於約150nm及約250nm之間;介於約150nm及約225nm之間;介於約150nm及約200nm之間;介於約150nm及約175nm之間。增加分散於拋光漿料中膠體顆粒的粒度大致增加於第二拋光處理期間從基板可移除材料的速率。
在拋光漿料中利用的膠體顆粒從SiO
2、AL
2O
3、CeO
2、Fe
2O
3、ZrO
2、TiO
2、SiC或類似者形成。在一個實施例中,在拋光漿料中利用的膠體顆粒從與在研磨漿料中膠體顆粒相同的材料形成。在另一實施例中,在拋光漿料中利用的膠體顆粒從與研磨漿料中膠體顆粒不同的材料形成。
在拋光漿料中膠體顆粒的重量百分比之範圍從約1%至約30%,例如介於約1%及約25%之間。舉例而言,在研磨漿料中膠體顆粒的重量百分比之範圍從約1%至約15%;從約1%至約10%;從約1%至約5%;從約10%至約30%;從約10%至約25%。
在某些實施例中,膠體顆粒分散在包括水、氧化鋁(Al
2O
3)、KOH或類似者的溶液中。拋光漿料可具有在約4至約10的範圍中的pH,例如介於約5及約10之間。舉例而言,拋光漿料具有在約7至約10的範圍中的pH,例如約9。一或更多pH調節劑可添加至拋光漿料,以調節拋光漿料的pH至所欲等級。舉例而言,拋光漿料的pH可藉由添加TMAH、NH
4OH、HNO
3或類似者而調節。
在第二拋光處理期間,基板表面及拋光墊以小於約15psi的壓力接觸。基板表面的平滑化可以具有約10psi或更少的壓力之第二拋光處理來實行,舉例而言,從約2psi至約10psi。在處理的一個態樣中,基板表面及拋光墊以介於約3psi及約10psi之間的壓力接觸,例如介於約5psi及約10psi之間。
在一個實施例中,平台於第二拋光處理期間以從約50rpm至約100rpm的速度旋轉,且基板載具以從約50rpm至約100rpm的速度旋轉。在處理的一個態樣中,平台以介於約70rpm及約90rpm之間的速度旋轉,且基板載具以介於約70rpm及約90rpm之間的速度旋轉。
在第一及/或第二拋光處理之後,所使用的漿料可通過漿料管理及回收系統處理,用於後續重新使用。舉例而言,拋光裝置可包括佈置於拋光平台(例如平台102)下方的漿料回收排管。漿料回收排管可流體耦合至具有一或更多過濾器的漿料回收槽,以基於尺寸從使用的研磨及拋光漿料分開可重新使用的膠體顆粒。分開的膠體顆粒可接著清洗且重新引入至新鮮批料的漿料用於進一步拋光處理。
拋光及研磨漿料可在漿料管理及回收系統之中不斷循環或攪動。漿料的不斷循環或攪動避免膠體顆粒的安頓且維持在漿料中膠體顆粒實質上均勻的分散。在一個範例中,漿料管理及回收系統包括一或更多渦輪幫浦,以汲取漿料通過系統。開放及球形幫浦通道減少膠體顆粒堵塞幫浦的風險,因此能夠在漿料管理及回收系統之中有效循環漿料。在進一步範例中,漿料管理及回收系統包括一或更多漿料收容槽,具有混合裝置配置成不斷攪動儲存的漿料。
已觀察到藉由此處所述的處理平坦化的基板展現減少的拓樸缺陷、強化的輪廓均勻性、強化的平坦性及強化的表面修整。再者,此處所述的處理提供利用於先進封裝應用的基板的各種材料的強化的移除速率,例如聚合材料。
儘管以上導向本揭露案的實例,可衍生本揭露案的其他及進一步實例而不會悖離其基本範疇,且其範疇藉由以下申請專利範圍來決定。
100:拋光裝置
102:平台
104:平台軸
105:拋光墊
106:透射窗特徵
108:基板載具
109:載具環
110:基板
111:彈性隔膜
114:載具軸
116:流體
118:流體分配器
122:平台開口
130:終點偵測系統
200:處理
210:操作
211:彈性隔膜
220:操作
230:操作
以此方式可詳細理解本揭露案以上所載之特徵,以上簡要概述的本實例的更具體說明可藉由參考實例而獲得,某些實例圖示於隨附圖式中。然而,應理解隨附圖式僅圖示本揭露案的通常實例,且因此不應考量為其範疇之限制,因為本揭露案認可其他均等效果的實例。
第1圖根據此處所述的實施例,圖示拋光裝置的概要剖面視圖。
第2圖根據此處所述的實施例,圖示用於基板表面平坦化之處理的流程圖。
為了促進理解,已儘可能地使用相同的元件符號代表共通圖式中相同的元件。應理解一個實例的元件及特徵可有益地併入其他實例中而無須進一步說明。
國內寄存資訊(請依寄存機構、日期、號碼順序註記)
無
國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記)
無
100:拋光裝置
102:平台
104:平台軸
105:拋光墊
106:透射窗特徵
108:基板載具
109:載具環
110:基板
111:彈性隔膜
114:載具軸
116:流體
118:流體分配器
122:平台開口
130:終點偵測系統
Claims (20)
- 一種用於平坦化一半導體元件基板之方法,該方法包含以下步驟: 經由一第一拋光處理來拋光一半導體元件基板,以形成具有減少厚度的一半導體元件基板,該第一拋光處理包含: 使該半導體元件基板與一第一漿料接觸,該第一漿料包含: 第一複數個膠體顆粒,具有介於約1.2µm及約53µm之間的一粒度且包含介於約2%及約20%的該第一漿料的一重量百分比;以及 一分散劑;以及 經由一第二拋光處理來拋光具有減少厚度的該半導體元件基板,該第二拋光處理包含: 使該半導體元件基板與一第二漿料接觸,該第二漿料包含: 第二複數個膠體顆粒,具有介於約25nm及約500nm之間的一粒度。
- 如請求項1所述之方法,其中該第一複數個膠體顆粒包含一材料,該材料係選自由下列所組成之群組:二氧化矽、氧化鋁、二氧化鈰、氧化鐵、氧化鋯、金剛石、氮化硼、二氧化鈦及碳化矽。
- 如請求項2所述之方法,其中在該研磨漿料中該第一複數個膠體顆粒的一重量百分比介於約5%及約15%之間。
- 如請求項1所述之方法,其中該分散劑包含一非離子聚合物分散劑。
- 如請求項4所述之方法,其中該非離子聚合物分散劑選自由下列所組成之群組:聚乙烯醇、乙二醇、甘油、聚乙二醇、聚丙二醇及聚乙烯吡咯烷酮。
- 如請求項4所述之方法,其中該非離子聚合物分散劑以介於約1:1及約1:4的一比例,v/v分散劑:水性溶劑,與一水性溶劑混合。
- 如請求項1所述之方法,其中該第一漿料進一步包含一pH調節劑,該pH調節劑包含下列至少一者:氫氧化鉀、氫氧化四甲基銨、氫氧化銨與硝酸。
- 如請求項1所述之方法,其中該半導體元件基板包含一聚合材料。
- 如請求項8所述之方法,其中該聚合材料選自由下列所組成之群組:聚醯亞胺、聚醯胺、聚對二甲苯、聚矽氧、環氧樹脂、玻璃纖維增強的環氧模塑化合物與環氧樹脂。
- 如請求項1所述之方法,其中該第二複數個膠體顆粒具有介於約25nm及約250nm之間的一粒度。
- 如請求項10所述之方法,其中該第二複數個膠體顆粒包含一材料,該材料係選自由下列所組成之群組:二氧化矽、氧化鋁、二氧化鈰、氧化鐵、氧化鋯、二氧化鈦及碳化矽。
- 如請求項11所述之方法,其中該第二複數個膠體顆粒以與該第一複數個膠體顆粒之該材料不同的一材料形成。
- 如請求項1所述之方法,其中在該第二漿料中該第二複數個膠體顆粒的一重量百分比介於約1%及約15%之間。
- 如請求項1所述之方法,其中該第二漿料進一步包含一水性溶劑,該水性溶劑包含下列一或多者:水、氧化鋁及氫氧化鉀。
- 一種用於平坦化一半導體元件基板之方法,該方法包含以下步驟: 經由一第一拋光處理來拋光一半導體元件基板,以形成具有減少厚度的一半導體元件基板,該第一拋光處理包含: 使該半導體元件基板與一第一漿料接觸,該第一漿料包含: 第一複數個膠體顆粒,具有介於約1.2µm及約 53µm之間的一粒度,且該第一複數個膠體顆粒包含一第一材料,該第一材料係選自由下列所組成之群組:二氧化矽、氧化鋁、二氧化鈰、氧化鐵、氧化鋯、金剛石、氮化硼、二氧化鈦及碳化矽;以及 一非離子聚合物分散劑,該非離子聚合物分散劑係選自由下列所組成之群組:聚乙烯醇、乙二醇、甘油、聚乙二醇、聚丙二醇及聚乙烯吡咯烷酮;以及 經由一第二拋光處理來拋光具有減少厚度的該半導體元件基板,該第二拋光處理包含: 使該半導體元件基板與一第二漿料接觸,該第二漿料包含: 第二複數個膠體顆粒,具有介於約20nm及約500nm之間的一粒度,該第二複數個膠體顆粒包含一第二材料,該第二材料係選自由下列所組成之群組:二氧化矽、氧化鋁、二氧化鈰、氧化鐵、氧化鋯、金剛石、氮化硼、二氧化鈦及碳化矽,其中該第二材料與該第一材料不同。
- 如請求項15所述之方法,其中該非離子聚合物分散劑以介於約1:1及約1:4的一比例,v/v分散劑:水性溶劑,與一水性溶劑混合。
- 如請求項15所述之方法,其中該第一漿料進一步包含一pH調節劑,該pH調節劑包含下列至少一者:氫氧化鉀、氫氧化四甲基銨、氫氧化銨與硝酸。
- 如請求項1所述之方法,其中該半導體元件基板包含一聚合材料。
- 如請求項18所述之方法,其中該聚合材料選自由下列所組成之群組:聚醯亞胺、聚醯胺、聚對二甲苯、聚矽氧、環氧樹脂、玻璃纖維增強的環氧模塑化合物與環氧樹脂。
- 一種用於平坦化一半導體元件基板之方法,該方法包含以下步驟: 經由一第一拋光處理來拋光一半導體元件基板,以形成具有減少厚度的一半導體元件基板,該半導體元件基板包含一或多個介電層或金屬層形成於該半導體元件基板上,該第一拋光處理包含: 使該半導體元件基板與一第一漿料接觸,該第一漿料包含: 第一複數個膠體顆粒,具有介於約1.2µm及 約 53µm之間的一粒度;以及 一非離子聚合物分散劑,該非離子聚合物分散劑係選自由下列所組成之群組:聚乙烯醇、乙二醇、甘油、聚乙二醇、聚丙二醇及聚乙烯吡咯烷酮;以及 水性溶劑,其中該非離子聚合物分散劑以介於約1:1及約1:4的一比例,v/v分散劑:水性溶劑,與該水性溶劑混合;以及 經由一第二拋光處理來拋光具有減少厚度的該半導體元件基板,該第二拋光處理包含: 使該半導體元件基板與一第二漿料接觸,該第二漿料包含: 第二複數個膠體顆粒,具有介於約20nm及約500nm之間的一粒度;以及 水性溶劑,該水性溶劑包含下列至少一者:氧化鋁及氫氧化鉀。
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CN113874987A (zh) | 2021-12-31 |
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