JP2016093880A5 - - Google Patents
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- JP2016093880A5 JP2016093880A5 JP2015130438A JP2015130438A JP2016093880A5 JP 2016093880 A5 JP2016093880 A5 JP 2016093880A5 JP 2015130438 A JP2015130438 A JP 2015130438A JP 2015130438 A JP2015130438 A JP 2015130438A JP 2016093880 A5 JP2016093880 A5 JP 2016093880A5
- Authority
- JP
- Japan
- Prior art keywords
- acid
- potassium
- salts
- salt
- acids
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 150000003839 salts Chemical class 0.000 description 11
- 239000002253 acid Substances 0.000 description 10
- -1 peroxodisulfuric acid Persulfuric acid Chemical class 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 150000007513 acids Chemical class 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- KMUONIBRACKNSN-UHFFFAOYSA-N potassium dichromate Chemical compound [K+].[K+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O KMUONIBRACKNSN-UHFFFAOYSA-N 0.000 description 2
- 239000012286 potassium permanganate Substances 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- MLIWQXBKMZNZNF-KUHOPJCQSA-N (2e)-2,6-bis[(4-azidophenyl)methylidene]-4-methylcyclohexan-1-one Chemical compound O=C1\C(=C\C=2C=CC(=CC=2)N=[N+]=[N-])CC(C)CC1=CC1=CC=C(N=[N+]=[N-])C=C1 MLIWQXBKMZNZNF-KUHOPJCQSA-N 0.000 description 1
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 description 1
- JYLNVJYYQQXNEK-UHFFFAOYSA-N 3-amino-2-(4-chlorophenyl)-1-propanesulfonic acid Chemical compound OS(=O)(=O)CC(CN)C1=CC=C(Cl)C=C1 JYLNVJYYQQXNEK-UHFFFAOYSA-N 0.000 description 1
- QSHYGLAZPRJAEZ-UHFFFAOYSA-N 4-(chloromethyl)-2-(2-methylphenyl)-1,3-thiazole Chemical compound CC1=CC=CC=C1C1=NC(CCl)=CS1 QSHYGLAZPRJAEZ-UHFFFAOYSA-N 0.000 description 1
- XWNSFEAWWGGSKJ-UHFFFAOYSA-N 4-acetyl-4-methylheptanedinitrile Chemical compound N#CCCC(C)(C(=O)C)CCC#N XWNSFEAWWGGSKJ-UHFFFAOYSA-N 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical class [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- 239000004153 Potassium bromate Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- APUPEJJSWDHEBO-UHFFFAOYSA-P ammonium molybdate Chemical compound [NH4+].[NH4+].[O-][Mo]([O-])(=O)=O APUPEJJSWDHEBO-UHFFFAOYSA-P 0.000 description 1
- 235000018660 ammonium molybdate Nutrition 0.000 description 1
- 239000011609 ammonium molybdate Substances 0.000 description 1
- 229940010552 ammonium molybdate Drugs 0.000 description 1
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium peroxydisulfate Substances [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 1
- VAZSKTXWXKYQJF-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)OOS([O-])=O VAZSKTXWXKYQJF-UHFFFAOYSA-N 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- UNTBPXHCXVWYOI-UHFFFAOYSA-O azanium;oxido(dioxo)vanadium Chemical compound [NH4+].[O-][V](=O)=O UNTBPXHCXVWYOI-UHFFFAOYSA-O 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical compound OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 description 1
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 1
- XTEGARKTQYYJKE-UHFFFAOYSA-N chloric acid Chemical compound OCl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-N 0.000 description 1
- 229940005991 chloric acid Drugs 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- AXZAYXJCENRGIM-UHFFFAOYSA-J dipotassium;tetrabromoplatinum(2-) Chemical compound [K+].[K+].[Br-].[Br-].[Br-].[Br-].[Pt+2] AXZAYXJCENRGIM-UHFFFAOYSA-J 0.000 description 1
- QFWPJPIVLCBXFJ-UHFFFAOYSA-N glymidine Chemical compound N1=CC(OCCOC)=CN=C1NS(=O)(=O)C1=CC=CC=C1 QFWPJPIVLCBXFJ-UHFFFAOYSA-N 0.000 description 1
- QWARLPGIFZKIQW-UHFFFAOYSA-N hydrogen peroxide;nitric acid Chemical compound OO.O[N+]([O-])=O QWARLPGIFZKIQW-UHFFFAOYSA-N 0.000 description 1
- 150000002497 iodine compounds Chemical class 0.000 description 1
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 description 1
- VLAPMBHFAWRUQP-UHFFFAOYSA-L molybdic acid Chemical compound O[Mo](O)(=O)=O VLAPMBHFAWRUQP-UHFFFAOYSA-L 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- 229940094037 potassium bromate Drugs 0.000 description 1
- 235000019396 potassium bromate Nutrition 0.000 description 1
- 229910001487 potassium perchlorate Inorganic materials 0.000 description 1
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 1
- BQFYGYJPBUKISI-UHFFFAOYSA-N potassium;oxido(dioxo)vanadium Chemical compound [K+].[O-][V](=O)=O BQFYGYJPBUKISI-UHFFFAOYSA-N 0.000 description 1
- 150000003303 ruthenium Chemical class 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- CMZUMMUJMWNLFH-UHFFFAOYSA-N sodium metavanadate Chemical compound [Na+].[O-][V](=O)=O CMZUMMUJMWNLFH-UHFFFAOYSA-N 0.000 description 1
- 235000015393 sodium molybdate Nutrition 0.000 description 1
- 239000011684 sodium molybdate Substances 0.000 description 1
- TVXXNOYZHKPKGW-UHFFFAOYSA-N sodium molybdate (anhydrous) Chemical compound [Na+].[Na+].[O-][Mo]([O-])(=O)=O TVXXNOYZHKPKGW-UHFFFAOYSA-N 0.000 description 1
- JQWHASGSAFIOCM-UHFFFAOYSA-M sodium periodate Substances [Na+].[O-]I(=O)(=O)=O JQWHASGSAFIOCM-UHFFFAOYSA-M 0.000 description 1
- XMVONEAAOPAGAO-UHFFFAOYSA-N sodium tungstate Chemical compound [Na+].[Na+].[O-][W]([O-])(=O)=O XMVONEAAOPAGAO-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- DAFQZPUISLXFBF-UHFFFAOYSA-N tetraoxathiolane 5,5-dioxide Chemical compound O=S1(=O)OOOO1 DAFQZPUISLXFBF-UHFFFAOYSA-N 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- CMPGARWFYBADJI-UHFFFAOYSA-L tungstic acid Chemical compound O[W](O)(=O)=O CMPGARWFYBADJI-UHFFFAOYSA-L 0.000 description 1
- WQEVDHBJGNOKKO-UHFFFAOYSA-K vanadic acid Chemical compound O[V](O)(O)=O WQEVDHBJGNOKKO-UHFFFAOYSA-K 0.000 description 1
- 229910000166 zirconium phosphate Inorganic materials 0.000 description 1
Priority Applications (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020177014189A KR102617024B1 (ko) | 2014-11-07 | 2015-10-30 | 연마 방법 및 폴리싱용 조성물 |
| US15/525,017 US10227517B2 (en) | 2014-11-07 | 2015-10-30 | Polishing method and polishing composition |
| EP22203611.3A EP4163057A1 (en) | 2014-11-07 | 2015-10-30 | Polishing method and polishing composition |
| EP17001211.6A EP3263277B1 (en) | 2014-11-07 | 2015-10-30 | Polishing method and polishing composition |
| PCT/JP2015/080843 WO2016072370A1 (ja) | 2014-11-07 | 2015-10-30 | 研磨方法およびポリシング用組成物 |
| EP15856847.7A EP3216562B1 (en) | 2014-11-07 | 2015-10-30 | Polishing method and polishing composition |
| CN201580060434.3A CN107107302B (zh) | 2014-11-07 | 2015-10-30 | 研磨方法及抛光用组合物 |
| EP20202592.0A EP3792000B1 (en) | 2014-11-07 | 2015-10-30 | Polishing method and polishing composition |
| TW104136497A TWI720954B (zh) | 2014-11-07 | 2015-11-05 | 研磨方法及拋光用組成物 |
| US16/254,930 US10759981B2 (en) | 2014-11-07 | 2019-01-23 | Polishing method and polishing composition |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014227388 | 2014-11-07 | ||
| JP2014227388 | 2014-11-07 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016093880A JP2016093880A (ja) | 2016-05-26 |
| JP2016093880A5 true JP2016093880A5 (https=) | 2018-06-21 |
| JP6611485B2 JP6611485B2 (ja) | 2019-11-27 |
Family
ID=56069867
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015130438A Active JP6611485B2 (ja) | 2014-11-07 | 2015-06-29 | 研磨方法およびポリシング用組成物 |
| JP2015130440A Active JP6656829B2 (ja) | 2014-11-07 | 2015-06-29 | 研磨用組成物 |
| JP2015130439A Active JP6694674B2 (ja) | 2014-11-07 | 2015-06-29 | 研磨方法およびポリシング用組成物 |
| JP2015215119A Active JP6670587B2 (ja) | 2014-11-07 | 2015-10-30 | 研磨方法およびポリシング用組成物 |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015130440A Active JP6656829B2 (ja) | 2014-11-07 | 2015-06-29 | 研磨用組成物 |
| JP2015130439A Active JP6694674B2 (ja) | 2014-11-07 | 2015-06-29 | 研磨方法およびポリシング用組成物 |
| JP2015215119A Active JP6670587B2 (ja) | 2014-11-07 | 2015-10-30 | 研磨方法およびポリシング用組成物 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US10227517B2 (https=) |
| EP (6) | EP3800229B1 (https=) |
| JP (4) | JP6611485B2 (https=) |
| KR (2) | KR20170080616A (https=) |
| CN (1) | CN107107302B (https=) |
| TW (2) | TWI720954B (https=) |
| WO (1) | WO2016072370A1 (https=) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6611485B2 (ja) * | 2014-11-07 | 2019-11-27 | 株式会社フジミインコーポレーテッド | 研磨方法およびポリシング用組成物 |
| JP6788432B2 (ja) * | 2016-08-25 | 2020-11-25 | 山口精研工業株式会社 | 炭化珪素基板用研磨剤組成物 |
| JP6280678B1 (ja) * | 2016-12-22 | 2018-02-14 | 三井金属鉱業株式会社 | 研摩液及び研摩方法 |
| US11078380B2 (en) * | 2017-07-10 | 2021-08-03 | Entegris, Inc. | Hard abrasive particle-free polishing of hard materials |
| WO2019065994A1 (ja) * | 2017-09-29 | 2019-04-04 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| KR102542403B1 (ko) * | 2017-09-29 | 2023-06-12 | 삼성전자 주식회사 | 무선 셀룰라 통신 시스템에서 자원 설정과 데이터 송수신 방법 및 장치 |
| CN109749630B (zh) * | 2017-11-06 | 2021-05-25 | 蓝思科技（长沙）有限公司 | 一种微米级碳化硼粗磨液、其制备方法及其应用 |
| CN109702639B (zh) * | 2019-01-02 | 2021-02-19 | 山东天岳先进科技股份有限公司 | 一种SiC单晶片磨抛方法 |
| CN110091219A (zh) * | 2019-03-13 | 2019-08-06 | 林德谊 | 一种银或银合金的表面抛光处理工艺 |
| JP7628677B2 (ja) * | 2019-08-05 | 2025-02-12 | 国立大学法人大阪大学 | 陽極酸化を援用した研磨方法 |
| CN111073520B (zh) * | 2019-12-25 | 2021-09-03 | 苏州纳迪微电子有限公司 | 碳化硅晶圆片抛光用抛光粉及其制备方法、抛光液 |
| CN114901432A (zh) * | 2019-12-25 | 2022-08-12 | 圣戈班磨料磨具有限公司 | 具有增强的顶胶组合物的涂覆磨料 |
| US20210269674A1 (en) | 2020-02-28 | 2021-09-02 | Fujimi Corporation | Polishing composition containing zirconia particles and an oxidizer |
| CN115697629A (zh) * | 2020-05-27 | 2023-02-03 | 福吉米株式会社 | 研磨方法和抛光用组合物套组 |
| JP7817939B2 (ja) * | 2020-09-30 | 2026-02-19 | 株式会社フジミインコーポレーテッド | ポリシングおよび洗浄方法、洗浄剤ならびに研磨洗浄用セット |
| EP4628556A3 (en) * | 2021-02-04 | 2025-12-10 | Fujimi Incorporated | Polishing method and polishing composition |
| US20240199915A1 (en) * | 2021-02-04 | 2024-06-20 | Fujimi Incorporation | Polishing composition |
| WO2022240842A1 (en) | 2021-05-13 | 2022-11-17 | Araca, Inc. | Silicon carbide (sic) wafer polishing with slurry formulation and process |
| CN118055994A (zh) | 2021-09-30 | 2024-05-17 | 福吉米株式会社 | 研磨用组合物 |
| EP4410923A4 (en) | 2021-09-30 | 2025-10-01 | Fujimi Inc | POLISHING COMPOSITION |
| EP4444817A4 (en) * | 2021-12-10 | 2025-11-12 | Fujimi Inc | POLISHING COMPOUNDS FOR SILICON CARBIDE SURFACES AND THEIR METHODS OF USE |
| KR20240166014A (ko) | 2022-03-30 | 2024-11-25 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 |
| CN120958560A (zh) | 2023-03-30 | 2025-11-14 | 福吉米株式会社 | 研磨用组合物 |
Family Cites Families (63)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3185535B2 (ja) | 1994-04-15 | 2001-07-11 | 富士電機株式会社 | 電子デバイスおよびその製造方法 |
| JPH09262757A (ja) * | 1996-03-28 | 1997-10-07 | Honda Motor Co Ltd | セラミックスの表面加工方法及びその装置 |
| JP2000315665A (ja) * | 1999-04-29 | 2000-11-14 | Ebara Corp | 研磨方法及び装置 |
| US5916453A (en) | 1996-09-20 | 1999-06-29 | Fujitsu Limited | Methods of planarizing structures on wafers and substrates by polishing |
| JPH11188610A (ja) * | 1997-12-25 | 1999-07-13 | Teru Kagaku Kogyo Kk | 高硬度無機質固体材料の鏡面研磨方法 |
| JPH11294460A (ja) * | 1998-04-13 | 1999-10-26 | Ntn Corp | 転がり軸受 |
| JPH11303876A (ja) * | 1998-04-22 | 1999-11-02 | Ntn Corp | 金属製もみ抜き保持器のバレル研磨用研磨メディア |
| SG90227A1 (en) * | 2000-01-18 | 2002-07-23 | Praxair Technology Inc | Polishing slurry |
| US7005382B2 (en) * | 2002-10-31 | 2006-02-28 | Jsr Corporation | Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing process, production process of semiconductor device and material for preparing an aqueous dispersion for chemical mechanical polishing |
| US7071105B2 (en) * | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
| KR100550491B1 (ko) | 2003-05-06 | 2006-02-09 | 스미토모덴키고교가부시키가이샤 | 질화물 반도체 기판 및 질화물 반도체 기판의 가공 방법 |
| JP2004349426A (ja) | 2003-05-21 | 2004-12-09 | Jsr Corp | Ｓｔｉ用化学機械研磨方法 |
| JP2005209800A (ja) * | 2004-01-21 | 2005-08-04 | Fujitsu Ltd | 半導体装置の製造方法 |
| US20080261401A1 (en) | 2004-04-08 | 2008-10-23 | Ii-Vi Incorporated | Chemical-Mechanical Polishing of Sic Surfaces Using Hydrogen Peroxide or Ozonated Water Solutions in Combination with Colloidal Abrasive |
| JP2006093666A (ja) * | 2004-08-23 | 2006-04-06 | Matsushita Electric Ind Co Ltd | 炭化シリコン結晶基板研磨方法 |
| US7118458B2 (en) | 2004-08-23 | 2006-10-10 | Matsushita Electric Industrial Co., Ltd. | Method for polishing silicon carbide crystal substrate |
| JP2006179647A (ja) * | 2004-12-22 | 2006-07-06 | Renesas Technology Corp | 半導体装置の製造方法及び半導体製造装置 |
| JP4792802B2 (ja) | 2005-04-26 | 2011-10-12 | 住友電気工業株式会社 | Ｉｉｉ族窒化物結晶の表面処理方法 |
| JP4499613B2 (ja) * | 2005-05-27 | 2010-07-07 | 富士通マイクロエレクトロニクス株式会社 | 絶縁膜の研磨方法 |
| JP4518209B1 (ja) | 2009-09-07 | 2010-08-04 | 住友電気工業株式会社 | Ｉｉｉ族窒化物結晶基板、エピ層付ｉｉｉ族窒化物結晶基板、ならびに半導体デバイスおよびその製造方法 |
| US9708735B2 (en) | 2005-06-23 | 2017-07-18 | Sumitomo Electric Industries, Ltd. | Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same |
| JP4277826B2 (ja) | 2005-06-23 | 2009-06-10 | 住友電気工業株式会社 | 窒化物結晶、窒化物結晶基板、エピ層付窒化物結晶基板、ならびに半導体デバイスおよびその製造方法 |
| US20120223417A1 (en) | 2005-06-23 | 2012-09-06 | Sumitomo Electric Industries, Ltd. | Group iii nitride crystal substrate, epilayer-containing group iii nitride crystal substrate, semiconductor device and method of manufacturing the same |
| US8771552B2 (en) * | 2005-06-23 | 2014-07-08 | Sumitomo Electric Industries, Ltd. | Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same |
| JP2007021703A (ja) * | 2005-07-21 | 2007-02-01 | Fujimi Inc | 研磨用組成物 |
| KR20070012209A (ko) * | 2005-07-21 | 2007-01-25 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 및 연마 방법 |
| JP4753710B2 (ja) * | 2005-12-22 | 2011-08-24 | 花王株式会社 | ハードディスク基板用研磨液組成物 |
| GB2433515B (en) * | 2005-12-22 | 2011-05-04 | Kao Corp | Polishing composition for hard disk substrate |
| JP4846445B2 (ja) * | 2006-05-19 | 2011-12-28 | 新日本製鐵株式会社 | 炭化珪素単結晶ウェハ表面の仕上げ研磨方法 |
| JP2008044078A (ja) * | 2006-08-18 | 2008-02-28 | Sumitomo Metal Mining Co Ltd | サファイア基板の研磨方法 |
| US7998866B2 (en) * | 2006-09-05 | 2011-08-16 | Cabot Microelectronics Corporation | Silicon carbide polishing method utilizing water-soluble oxidizers |
| JP5336699B2 (ja) * | 2006-09-15 | 2013-11-06 | 株式会社ノリタケカンパニーリミテド | 結晶材料の研磨加工方法 |
| KR101452550B1 (ko) * | 2007-07-19 | 2014-10-21 | 미쓰비시 가가꾸 가부시키가이샤 | Ⅲ 족 질화물 반도체 기판 및 그 세정 방법 |
| US8383003B2 (en) * | 2008-06-20 | 2013-02-26 | Nexplanar Corporation | Polishing systems |
| JP2010023199A (ja) * | 2008-07-22 | 2010-02-04 | Fujimi Inc | 研磨用組成物及び研磨方法 |
| JP5267177B2 (ja) | 2009-02-04 | 2013-08-21 | 日立金属株式会社 | 炭化珪素単結晶基板の製造方法 |
| JP4827963B2 (ja) * | 2009-12-11 | 2011-11-30 | 国立大学法人九州大学 | 炭化珪素の研磨液及びその研磨方法 |
| JP4940289B2 (ja) | 2009-12-11 | 2012-05-30 | 三井金属鉱業株式会社 | 研摩材 |
| JP5493956B2 (ja) * | 2010-02-10 | 2014-05-14 | 株式会社Ｓｕｍｃｏ | 半導体ウェーハの製造方法 |
| JPWO2011122415A1 (ja) * | 2010-03-29 | 2013-07-08 | 旭硝子株式会社 | 研磨剤、研磨方法および半導体集積回路装置の製造方法 |
| WO2012036087A1 (ja) * | 2010-09-15 | 2012-03-22 | 旭硝子株式会社 | 研磨剤および研磨方法 |
| JP2012094559A (ja) * | 2010-10-22 | 2012-05-17 | Sumco Corp | 硬脆性ウェーハの平坦化加工方法および平坦化加工用パッド |
| JP2012146975A (ja) | 2010-12-24 | 2012-08-02 | Hitachi Chem Co Ltd | 研磨液及びこの研磨液を用いた基板の研磨方法 |
| JPWO2012137531A1 (ja) | 2011-04-04 | 2014-07-28 | Dic株式会社 | 研磨パッド用ウレタン樹脂組成物、研磨パッド及びその製造方法 |
| KR20140012135A (ko) * | 2011-04-26 | 2014-01-29 | 아사히 가라스 가부시키가이샤 | 비산화물 단결정 기판의 연마 방법 |
| JP2012248569A (ja) | 2011-05-25 | 2012-12-13 | Asahi Glass Co Ltd | 研磨剤および研磨方法 |
| KR20140019372A (ko) | 2011-06-03 | 2014-02-14 | 아사히 가라스 가부시키가이샤 | 연마제 및 연마 방법 |
| JPWO2013021946A1 (ja) * | 2011-08-09 | 2015-03-05 | 株式会社フジミインコーポレーテッド | 化合物半導体研磨用組成物 |
| JPWO2013035539A1 (ja) | 2011-09-05 | 2015-03-23 | 旭硝子株式会社 | 研磨剤および研磨方法 |
| WO2013054883A1 (ja) | 2011-10-13 | 2013-04-18 | 三井金属鉱業株式会社 | 研摩材スラリー及び研摩方法 |
| JP2013120885A (ja) | 2011-12-08 | 2013-06-17 | Hitachi Chemical Co Ltd | Ｃｍｐ用研磨液及びこの研磨液を用いた研磨方法 |
| WO2013133974A1 (en) | 2012-03-08 | 2013-09-12 | Applied Materials, Inc. | Fitting of optical model to measured spectrum |
| JP5803786B2 (ja) * | 2012-04-02 | 2015-11-04 | 住友電気工業株式会社 | 炭化珪素基板、半導体装置およびこれらの製造方法 |
| JP2014024154A (ja) | 2012-07-26 | 2014-02-06 | Fujimi Inc | ポリッシング用研磨材、研磨用組成物、それを用いた硬脆材料の研磨方法、及びそれを用いた硬脆材料基板の製造方法 |
| US8821215B2 (en) * | 2012-09-07 | 2014-09-02 | Cabot Microelectronics Corporation | Polypyrrolidone polishing composition and method |
| US10450651B2 (en) * | 2013-01-18 | 2019-10-22 | Fujimi Incorporated | Article comprising metal oxide-containing coating |
| JP6083901B2 (ja) | 2013-05-24 | 2017-02-22 | 田岡化学工業株式会社 | ビナフタレン化合物の製造方法 |
| WO2015059987A1 (ja) * | 2013-10-22 | 2015-04-30 | 株式会社ノリタケカンパニーリミテド | 研磨用組成物およびそれを用いた研磨加工方法 |
| JP2015130438A (ja) | 2014-01-08 | 2015-07-16 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP6251043B2 (ja) | 2014-01-08 | 2017-12-20 | 株式会社荏原製作所 | エッチング液、エッチング方法、およびはんだバンプの製造方法 |
| JP6307884B2 (ja) | 2014-01-08 | 2018-04-11 | 富士通株式会社 | 電子機器 |
| JP6318637B2 (ja) * | 2014-01-17 | 2018-05-09 | 日立金属株式会社 | 高硬度材料のマルチワイヤソーによる切断方法 |
| JP6611485B2 (ja) * | 2014-11-07 | 2019-11-27 | 株式会社フジミインコーポレーテッド | 研磨方法およびポリシング用組成物 |
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