KR20170080616A - 연마용 조성물 - Google Patents

연마용 조성물 Download PDF

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Publication number
KR20170080616A
KR20170080616A KR1020177014192A KR20177014192A KR20170080616A KR 20170080616 A KR20170080616 A KR 20170080616A KR 1020177014192 A KR1020177014192 A KR 1020177014192A KR 20177014192 A KR20177014192 A KR 20177014192A KR 20170080616 A KR20170080616 A KR 20170080616A
Authority
KR
South Korea
Prior art keywords
polishing
orp
composition
polished
polishing composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020177014192A
Other languages
English (en)
Korean (ko)
Inventor
슈헤이 다카하시
마사토시 도마츠
Original Assignee
가부시키가이샤 후지미인코퍼레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 후지미인코퍼레이티드 filed Critical 가부시키가이샤 후지미인코퍼레이티드
Priority claimed from PCT/JP2015/080844 external-priority patent/WO2016072371A1/ja
Publication of KR20170080616A publication Critical patent/KR20170080616A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
KR1020177014192A 2014-11-07 2015-10-30 연마용 조성물 Ceased KR20170080616A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2014227388 2014-11-07
JPJP-P-2014-227388 2014-11-07
JP2015130440A JP6656829B2 (ja) 2014-11-07 2015-06-29 研磨用組成物
JPJP-P-2015-130440 2015-06-29
PCT/JP2015/080844 WO2016072371A1 (ja) 2014-11-07 2015-10-30 研磨用組成物

Publications (1)

Publication Number Publication Date
KR20170080616A true KR20170080616A (ko) 2017-07-10

Family

ID=56069867

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020177014192A Ceased KR20170080616A (ko) 2014-11-07 2015-10-30 연마용 조성물
KR1020177014189A Active KR102617024B1 (ko) 2014-11-07 2015-10-30 연마 방법 및 폴리싱용 조성물

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020177014189A Active KR102617024B1 (ko) 2014-11-07 2015-10-30 연마 방법 및 폴리싱용 조성물

Country Status (7)

Country Link
US (3) US10227517B2 (https=)
EP (6) EP3800229B1 (https=)
JP (4) JP6611485B2 (https=)
KR (2) KR20170080616A (https=)
CN (1) CN107107302B (https=)
TW (2) TWI720954B (https=)
WO (1) WO2016072370A1 (https=)

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CN109749630B (zh) * 2017-11-06 2021-05-25 蓝思科技（长沙）有限公司 一种微米级碳化硼粗磨液、其制备方法及其应用
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EP4444817A4 (en) * 2021-12-10 2025-11-12 Fujimi Inc POLISHING COMPOUNDS FOR SILICON CARBIDE SURFACES AND THEIR METHODS OF USE
KR20240166014A (ko) 2022-03-30 2024-11-25 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
CN120958560A (zh) 2023-03-30 2025-11-14 福吉米株式会社 研磨用组合物

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Also Published As

Publication number Publication date
JP2016093880A (ja) 2016-05-26
US20190153278A1 (en) 2019-05-23
TW201623552A (zh) 2016-07-01
EP3216562B1 (en) 2022-10-12
US20170321098A1 (en) 2017-11-09
EP3216839A1 (en) 2017-09-13
EP3216562A1 (en) 2017-09-13
CN107107302A (zh) 2017-08-29
JP2016094588A (ja) 2016-05-26
EP3792000A1 (en) 2021-03-17
JP6694674B2 (ja) 2020-05-20
US10759981B2 (en) 2020-09-01
EP3800229A1 (en) 2021-04-07
EP3216839B1 (en) 2021-09-01
TWI720954B (zh) 2021-03-11
WO2016072370A1 (ja) 2016-05-12
EP3263277A2 (en) 2018-01-03
US10227517B2 (en) 2019-03-12
JP2016093884A (ja) 2016-05-26
US20170320187A1 (en) 2017-11-09
CN107107302B (zh) 2021-07-20
KR102617024B1 (ko) 2023-12-26
JP6656829B2 (ja) 2020-03-04
EP3792000B1 (en) 2025-06-11
US11015098B2 (en) 2021-05-25
JP2016096326A (ja) 2016-05-26
EP4163057A1 (en) 2023-04-12
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JP6611485B2 (ja) 2019-11-27
EP3216562A4 (en) 2018-04-18
JP6670587B2 (ja) 2020-03-25
KR20170081191A (ko) 2017-07-11
EP3216839A4 (en) 2018-08-29
TW201623551A (zh) 2016-07-01
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