CN107107302B - 研磨方法及抛光用组合物 - Google Patents

研磨方法及抛光用组合物 Download PDF

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Publication number
CN107107302B
CN107107302B CN201580060434.3A CN201580060434A CN107107302B CN 107107302 B CN107107302 B CN 107107302B CN 201580060434 A CN201580060434 A CN 201580060434A CN 107107302 B CN107107302 B CN 107107302B
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Prior art keywords
polishing
fin
composition
abrasive grains
finishing
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Chinese (zh)
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CN107107302A (zh
Inventor
高桥修平
户松正利
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Fujimi Inc
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Fujimi Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
CN201580060434.3A 2014-11-07 2015-10-30 研磨方法及抛光用组合物 Active CN107107302B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2014227388 2014-11-07
JP2014-227388 2014-11-07
JP2015130438A JP6611485B2 (ja) 2014-11-07 2015-06-29 研磨方法およびポリシング用組成物
JP2015130439A JP6694674B2 (ja) 2014-11-07 2015-06-29 研磨方法およびポリシング用組成物
JP2015-130439 2015-06-29
JP2015-130438 2015-06-29
PCT/JP2015/080843 WO2016072370A1 (ja) 2014-11-07 2015-10-30 研磨方法およびポリシング用組成物

Publications (2)

Publication Number Publication Date
CN107107302A CN107107302A (zh) 2017-08-29
CN107107302B true CN107107302B (zh) 2021-07-20

Family

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Family Applications (1)

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CN201580060434.3A Active CN107107302B (zh) 2014-11-07 2015-10-30 研磨方法及抛光用组合物

Country Status (7)

Country Link
US (3) US10227517B2 (https=)
EP (6) EP3800229B1 (https=)
JP (4) JP6611485B2 (https=)
KR (2) KR20170080616A (https=)
CN (1) CN107107302B (https=)
TW (2) TWI720954B (https=)
WO (1) WO2016072370A1 (https=)

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JP6611485B2 (ja) * 2014-11-07 2019-11-27 株式会社フジミインコーポレーテッド 研磨方法およびポリシング用組成物
JP6788432B2 (ja) * 2016-08-25 2020-11-25 山口精研工業株式会社 炭化珪素基板用研磨剤組成物
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US11078380B2 (en) * 2017-07-10 2021-08-03 Entegris, Inc. Hard abrasive particle-free polishing of hard materials
WO2019065994A1 (ja) * 2017-09-29 2019-04-04 株式会社フジミインコーポレーテッド 研磨用組成物
KR102542403B1 (ko) * 2017-09-29 2023-06-12 삼성전자 주식회사 무선 셀룰라 통신 시스템에서 자원 설정과 데이터 송수신 방법 및 장치
CN109749630B (zh) * 2017-11-06 2021-05-25 蓝思科技（长沙）有限公司 一种微米级碳化硼粗磨液、其制备方法及其应用
CN109702639B (zh) * 2019-01-02 2021-02-19 山东天岳先进科技股份有限公司 一种SiC单晶片磨抛方法
CN110091219A (zh) * 2019-03-13 2019-08-06 林德谊 一种银或银合金的表面抛光处理工艺
JP7628677B2 (ja) * 2019-08-05 2025-02-12 国立大学法人大阪大学 陽極酸化を援用した研磨方法
CN111073520B (zh) * 2019-12-25 2021-09-03 苏州纳迪微电子有限公司 碳化硅晶圆片抛光用抛光粉及其制备方法、抛光液
CN114901432A (zh) * 2019-12-25 2022-08-12 圣戈班磨料磨具有限公司 具有增强的顶胶组合物的涂覆磨料
US20210269674A1 (en) 2020-02-28 2021-09-02 Fujimi Corporation Polishing composition containing zirconia particles and an oxidizer
CN115697629A (zh) * 2020-05-27 2023-02-03 福吉米株式会社 研磨方法和抛光用组合物套组
JP7817939B2 (ja) * 2020-09-30 2026-02-19 株式会社フジミインコーポレーテッド ポリシングおよび洗浄方法、洗浄剤ならびに研磨洗浄用セット
EP4628556A3 (en) * 2021-02-04 2025-12-10 Fujimi Incorporated Polishing method and polishing composition
US20240199915A1 (en) * 2021-02-04 2024-06-20 Fujimi Incorporation Polishing composition
WO2022240842A1 (en) 2021-05-13 2022-11-17 Araca, Inc. Silicon carbide (sic) wafer polishing with slurry formulation and process
CN118055994A (zh) 2021-09-30 2024-05-17 福吉米株式会社 研磨用组合物
EP4410923A4 (en) 2021-09-30 2025-10-01 Fujimi Inc POLISHING COMPOSITION
EP4444817A4 (en) * 2021-12-10 2025-11-12 Fujimi Inc POLISHING COMPOUNDS FOR SILICON CARBIDE SURFACES AND THEIR METHODS OF USE
KR20240166014A (ko) 2022-03-30 2024-11-25 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
CN120958560A (zh) 2023-03-30 2025-11-14 福吉米株式会社 研磨用组合物

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JP2016093880A (ja) 2016-05-26
US20190153278A1 (en) 2019-05-23
TW201623552A (zh) 2016-07-01
EP3216562B1 (en) 2022-10-12
US20170321098A1 (en) 2017-11-09
EP3216839A1 (en) 2017-09-13
EP3216562A1 (en) 2017-09-13
CN107107302A (zh) 2017-08-29
JP2016094588A (ja) 2016-05-26
EP3792000A1 (en) 2021-03-17
JP6694674B2 (ja) 2020-05-20
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