JP4846445B2 - 炭化珪素単結晶ウェハ表面の仕上げ研磨方法 - Google Patents
炭化珪素単結晶ウェハ表面の仕上げ研磨方法 Download PDFInfo
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- JP4846445B2 JP4846445B2 JP2006139721A JP2006139721A JP4846445B2 JP 4846445 B2 JP4846445 B2 JP 4846445B2 JP 2006139721 A JP2006139721 A JP 2006139721A JP 2006139721 A JP2006139721 A JP 2006139721A JP 4846445 B2 JP4846445 B2 JP 4846445B2
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- 238000005498 polishing Methods 0.000 title claims description 83
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 63
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 62
- 239000013078 crystal Substances 0.000 title claims description 40
- 238000000034 method Methods 0.000 title claims description 33
- 239000002002 slurry Substances 0.000 claims description 43
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 36
- 239000008119 colloidal silica Substances 0.000 claims description 35
- 239000007800 oxidant agent Substances 0.000 claims description 27
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 18
- 239000001301 oxygen Substances 0.000 claims description 18
- 229910052760 oxygen Inorganic materials 0.000 claims description 18
- 239000005708 Sodium hypochlorite Substances 0.000 claims description 16
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 claims description 16
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 235000012431 wafers Nutrition 0.000 description 33
- 230000033116 oxidation-reduction process Effects 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 230000002195 synergetic effect Effects 0.000 description 7
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 6
- 229910000423 chromium oxide Inorganic materials 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 238000011109 contamination Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- 239000006061 abrasive grain Substances 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 238000000089 atomic force micrograph Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 239000007779 soft material Substances 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
(1) 酸化剤として次亜塩素酸ナトリウムと過酸化水素水とを含んで、酸化還元電位が少なくとも標準水素電極に対して700mV以上であると共に溶存酸素濃度が20mg/L以上であるコロイダルシリカスラリーを用いて、機械的研磨により形成された炭化珪素単結晶ウェハの表面の加工変質層を、0.05kg/cm 2 以上0.20kg/cm 2 以下の研磨面圧力で研磨して除去することを特徴とする炭化珪素単結晶ウェハ表面の仕上げ研磨方法、
である。
また、スラリー中の溶存酸素を20mg/L以上とすると、SiC表面に酸素が満遍なく行き渡り、均一に酸化できるようになり、均一に生成された酸化膜をコロイダルシリカで剥離除去するので、研磨表面が滑らかとなる。溶存酸素が20mg/L未満では、SiC単結晶表面に酸素が十分に行き渡らず、酸化能率が低下すると共に不均一な酸化膜生成となることがあり、研磨表面に大きなうねりを生じる可能性がある。
さらに、700mV以上の酸化還元電位と20mg/L以上の溶存酸素を有するスラリーであれば、酸化膜質の最適化と酸化膜の均一生成の相乗効果により、研磨効率の高い極めて平滑な表面形状を有するものが得られることになる。
尚、次亜塩素酸ナトリウムと過酸化水素以外に、例えば、フッ酸、過マンガン酸等の酸化剤でも同様に使用できる。
濃度30mass%の過酸化水素水4mass%と有効塩素5%の次亜塩素酸ナトリウム(水溶液)96mass%とを混合してなる酸化剤5mass%をコロイダルシリカ95mass%に加えて、スラリーを調製した。pHは弱アルカリ(pH〜10)に調整し、スラリー中のコロイダルシリカ固形分濃度は20mass%にした。このスラリーの標準水素電極に対する酸化還元電位は、典型値としては770mVで、研磨プロセス中変動したが、常に700mV以上を保っていた。また、溶存酸素濃度は測定器の上限値が20mg/L(表示値が19.99mg/L)であったが、常に、19.99mg/Lを表示し、20mg/L以上であった。
このスラリーを用いて、直径2インチ(50mm)の4H-SiC単結晶ウェハ表面の仕上げ研磨を実施した。ウェハ表面の方位は、Si(0001)面から(1-210)方向に8°傾けたSi面である。
尚、従来技術として、コロイダルシリカとアルカリ液の相乗作用を利用する研磨方法では、表面の凹凸がAFMで1nm以下(一例としてRMS値0.6nm)に平坦化できた。この時、研磨面圧力は0.5kg/cm2で、研磨定盤は80rpmで回転させた。
これらの比較から本発明方法の優位性は明らかである。
Claims (1)
- 酸化剤として次亜塩素酸ナトリウムと過酸化水素水とを含んで、酸化還元電位が少なくとも標準水素電極に対して700mV以上であると共に溶存酸素濃度が20mg/L以上であるコロイダルシリカスラリーを用いて、機械的研磨により形成された炭化珪素単結晶ウェハの表面の加工変質層を、0.05kg/cm 2 以上0.20kg/cm 2 以下の研磨面圧力で研磨して除去することを特徴とする炭化珪素単結晶ウェハ表面の仕上げ研磨方法。
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Cited By (1)
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US9685333B2 (en) | 2013-08-08 | 2017-06-20 | Fuji Electric Co., Ltd. | Manufacturing method of silicon carbide semiconductor device |
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Publication number | Priority date | Publication date | Assignee | Title |
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US7678700B2 (en) * | 2006-09-05 | 2010-03-16 | Cabot Microelectronics Corporation | Silicon carbide polishing method utilizing water-soluble oxidizers |
JP2009135338A (ja) | 2007-11-30 | 2009-06-18 | Sanyo Electric Co Ltd | 太陽電池及び太陽電池の製造方法 |
JP5358996B2 (ja) * | 2008-03-26 | 2013-12-04 | 日立金属株式会社 | SiC単結晶基板の製造方法 |
JP5277722B2 (ja) * | 2008-05-21 | 2013-08-28 | 新日鐵住金株式会社 | 炭化珪素単結晶ウェハ表面の研磨方法 |
JP5267177B2 (ja) * | 2009-02-04 | 2013-08-21 | 日立金属株式会社 | 炭化珪素単結晶基板の製造方法 |
JP5206733B2 (ja) | 2010-05-25 | 2013-06-12 | 株式会社デンソー | ウェハの加工方法およびそれに用いられる研磨装置、切断装置 |
CN102947919B (zh) * | 2010-06-23 | 2015-11-25 | 日产化学工业株式会社 | 碳化硅基板研磨用组合物和碳化硅基板的研磨方法 |
WO2013161049A1 (ja) | 2012-04-27 | 2013-10-31 | 三井金属鉱業株式会社 | SiC単結晶基板 |
JP6656829B2 (ja) | 2014-11-07 | 2020-03-04 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
CN107109191B (zh) * | 2014-11-07 | 2022-03-15 | 福吉米株式会社 | 研磨用组合物 |
TW202310031A (zh) * | 2021-08-24 | 2023-03-01 | 日商Jsr股份有限公司 | 化學機械研磨用組成物及研磨方法 |
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JP2005117027A (ja) * | 2003-09-16 | 2005-04-28 | Matsushita Electric Ind Co Ltd | SiC基板の製造方法 |
US20080261401A1 (en) * | 2004-04-08 | 2008-10-23 | Ii-Vi Incorporated | Chemical-Mechanical Polishing of Sic Surfaces Using Hydrogen Peroxide or Ozonated Water Solutions in Combination with Colloidal Abrasive |
JP2007027663A (ja) * | 2005-07-21 | 2007-02-01 | Fujimi Inc | 研磨用組成物 |
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US9685333B2 (en) | 2013-08-08 | 2017-06-20 | Fuji Electric Co., Ltd. | Manufacturing method of silicon carbide semiconductor device |
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