JP2015510263A - 紫外線を用いたコンフォーマルな膜蒸着の方法 - Google Patents
紫外線を用いたコンフォーマルな膜蒸着の方法 Download PDFInfo
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Abstract
Description
本出願は、「紫外線を用いたコンフォーマルな膜蒸着の方法(METHODS FOR UV-ASSISTED CONFORMAL FILM DEPOSITION)」の名称で2012年1月26日に出願された米国仮特許出願No.61/591,230及び2012年5月15日に出願された米国特許出願No.13/472,282に対して、優先権を主張するものであり、前記両出願の内容は、参照することにより本明細書に組み込まれる。
本発明は、SiN膜、SiCN膜及びSiC膜などのケイ素含有膜の、特に、半導体基板上への形成に関する。本明細書に記載する方法は、低温で膜を蒸着する工程を含む。
本明細書においては、別段の指定がない限り、以下の定義を適用する。
本明細書では、SiN膜及びSiCN膜やSiC膜などの他のケイ素含有誘電体膜を形成する方法を説明する。特定の実施形態において、紫外線で活性化されるコンフォーマルな膜蒸着を用いて、ケイ素含有膜が形成される。Si3N4膜及び酸素及び/又は炭素を含有するケイ素含有膜などの他のSiN膜を蒸着することができる。実施形態はCFDを含むものであるが、本明細書で記載される方法はCFDに限定されるものではない。他の適当な方法として、ALD、PEALD、CVD、PECVD及びプラズマ環状化学気相成長法(PECCVD)が含まれる。CFDを用いて膜を形成する方法は、2011年4月11日に出願された米国特許出願番号13/084,399に記載されており、この出願は、参照することによって、あらゆる目的で本明細書に組み込まれる。ここでは、CFDに関して簡単に説明する。
上述したように、ケイ素含有反応物質の例としては、シラン、ハロシラン又はアミノシランが挙げられる。シランは、水素及び/又は炭素基を含有するが、ハロゲンを含有しない。シランの例としては、シラン(SiH4)と、ジシラン(Si2H6)と、メチルシラン、エチルシラン、イソプロピルシラン、t‐ブチルシラン、ジメチルシラン、ジエチルシラン、ジ‐t‐ブチルシラン、アリルシラン、sec−ブチルシラン、テキシルシラン、イソアミルシラン、t‐ブチルジシラン、ジ‐t‐ブチルジシラン等のオルガノシランと、が挙げられる。ハロシランは、少なくとも1つのハロゲン基を含有するものであって、水素及び/又は炭素基を含有するものでも含有しないものでもよい。ハロシランの例としては、ヨードシラン、ブロモシラン、クロロシラン及びフルオロシランが挙げられる。ハロシラン、特にフルオロシランは、ケイ素材料をエッチング可能な反応性ハロゲン化合物種を形成することができるが、本明細書に記載する特定の実施形態においては、プラズマ照射の際にケイ素含有反応物質が存在しない。クロロシランの具体例としては、テトラクロロシラン(SiCl4)、トリクロロシラン(HSiCl3)、ジクロロシラン(H2SiCl2)、モノクロロシラン(ClSiH3)、クロロアリルシラン、クロロメチルシラン、ジクロロメチルシラン、クロロジメチルシラン、クロロエチルシラン、t‐ブチルクロロシラン、ジ‐t‐ブチルクロロシラン、クロロイソプロピルシラン、クロロ‐sec‐ブチルシラン、t‐ブチルジメチルクロロシラン、テキシルジメチルクロロシラン等が挙げられる。アミノシランは、ケイ素原子に結合される少なくとも1つの窒素原子を含むものであって、水素、酸素、ハロゲン及び炭素を含有するものでもよい。アミノシランの例としては、モノアミノシラン、ジアミノシラン、トリアミノシラン及びテトラアミノシラン(それぞれH3Si(NH2)4、H2Si(NH2)2、HSi(NH2)3及びSi(NH2)4)とともに、t‐ブチルアミノシラン、メチルアミノシラン、tert‐ブチルシランアミン、ビス(ターシャルブチルアミノ)シラン(SiH2(NHC(CH3)3)2(BTBAS))、ビス(ジメチルアミノ)ジメチルシラン及びケイ素とアミノ基の両方を炭素で置換した他の同様の化合物、tert‐ブチルシリルカルバメート、SiH(CH3)−(N(CH3)2)2、SiHCl−(N(CH3)2)2、(Si(CH3)2NH)3等の置換モノアミノシラン、置換ジアミノシラン、置換トリアミノシラン及び置換テトラアミノシランが挙げられる。アミノシランの別の例としては、トリシリルアミン(N(SiH3))がある。様々な実施形態において、ケイ素含有反応物質は、紫外線透過性のあるものでもよいし、ないものでもよい。紫外線透過性のケイ素含有反応物質が用いられる場合には、たとえば、図5、6〜7及び9〜13に関して上述したように、紫外線照射によって活性化される窒素含有共反応物質が存在する際に照射されるように紫外線曝露のタイミングを調節する。
本発明の別の態様は、本明細書に記載する方法を実施するように構成される装置である。適切な装置は、本発明に従って、処理操作を実施するためのハードウェアと、処理操作を制御するための指示を有するシステム制御部と、を備える。
本明細書に記載する実施形態に従う紫外線及び遠隔プラズマを用いる方法によって、ビス(ジメチルアミノ)ジメチルシラン及び窒素反応物質を反応させて、ケイ素含有膜を形成した。紫外線ランプをそれぞれ有する4つのステーションを備える紫外線硬化装置を用いた。処理シーケンスを以下に示す。
本明細書に記載する装置/プロセスを、たとえば、半導体デバイス、ディスプレイ、LED、太陽光発電パネル等の製作又は製造用のリソグラフパターン形成ツールまたはプロセスと共に用いるようにしてもよい。必ずではないが、一般的に、このようなツール/プロセスを、共有の製造施設で共に用いる又は実施するようにしてもよい。膜のリソグラフパターン形成は、通常、以下の工程の一部または全部を備える。多くの利用可能なツールを用いて、各工程を実行することができる。(1)スピン式(回転式)ツール又はスプレー式ツールを用いて、ワークピース、すなわち、基板上にフォトレジストを塗布する。(2)ホットプレート、炉又は紫外線硬化ツールを用いて、フォトレジストを硬化させる。(3)ウエハステッパ等のツールを用いて、フォトレジストに可視光、紫外線又はx線を照射する。(4)ウェットベンチ等のツールを用いて、レジストを現像して、選択的にレジストを除去することにより、パターン化する。(5)ドライエッチングツールまたはプラズマ支援エッチングツールを用いて、レジストパターンを下層の膜又はワークピースに転写する。(6)RF又はマイクロ波プラズマレジストストリッパ等のツールを用いて、レジストを除去する。一つの実施形態において、本明細書に記載する方法を用いて、SiN膜が形成される。たとえば、本明細書に記載する目的のうちの一つにSiN膜を用いる。さらに、方法は、上述した1つ又は複数の工程(1)〜(6)を含む。
Claims (26)
- 反応チャンバに基板を提供する工程と、1回又は複数回の蒸着サイクルを実行してケイ素含有膜を蒸着する工程と、を備える方法であって、
各サイクルは、
(a)窒素含有反応物質の気相流に前記基板を曝露し、
(b)ケイ素含有反応物質の気相流に前記基板を曝露し、
(c)前記窒素含有反応物質の気相流に紫外線を照射するとともに、前記ケイ素含有反応物質の気相流には紫外線を照射しない
方法。 - 請求項1に記載の方法であって、
前記基板は、ケイ素含有前駆物質の気相流に曝露される間に、前記窒素含有反応物質の気相流に曝露される、方法。 - 請求項1に記載の方法であって、
前記基板は、ケイ素含有前駆物質の気相流に曝露される間には、前記窒素含有反応物質の気相流に曝露されない、方法。 - 請求項1から請求項3のいずれか一項に記載の方法であって、
前記反応チャンバ内で、前記窒素含有反応物質の気相流に紫外線が照射される、方法。 - 請求項1から請求項3のいずれか一項に記載の方法であって、
前記チャンバの上流で、前記窒素含有反応物質の気相流に紫外線が照射される、方法。 - 請求項1から請求項5のいずれか一項に記載の方法であって、
前記ケイ素含有反応物質は、シラン、ハロシラン、アミノシラン及びこれらの混合物からなる群から選択される、方法。 - 請求項6に記載の方法であって、
前記ケイ素含有反応物質は、ケイ素及びアミノ基の部位に炭素含有置換基を有するアミノシランである、方法。 - 請求項1から請求項7のいずれか一項に記載の方法であって、
前記窒素含有反応物質は、アンモニア、ヒドラジン、アミン及びこれらの混合物からなる群から選択される、方法。 - 請求項1から請求項8のいずれか一項に記載の方法であって、
前記ケイ素含有膜は、SiN、SiCN、SiON又はSiONCからなる群から選択される、方法。 - 請求項9に記載の方法であって、
前記ケイ素含有膜はSiCNである、方法。 - 反応チャンバに基板を提供する工程と、1回又は複数回の蒸着サイクルを実行してケイ素含有膜を蒸着する工程と、を備える方法であって、
各サイクルでは、
(a)遠隔プラズマ源を用いて、窒素含有反応物質の気相流を活性化し、
(b)前記活性化された窒素含有反応物質に前記基板を曝露し、
(c)ケイ素含有反応物質の気相流に前記基板を曝露する
方法。 - 請求項11に記載の方法であって、
前記基板は、ケイ素含有前駆物質の気相流に曝露される間に、前記窒素含有反応物質の気相流に曝露される、方法。 - 請求項11に記載の方法であって、
前記基板は、ケイ素含有前駆物質の気相流に曝露される間には、前記窒素含有反応物質の気相流に曝露されない、方法。 - 請求項11から請求項13のいずれか一項に記載の方法であって、
前記ケイ素含有反応物質は、シラン、ハロシラン、アミノシラン及びこれらの混合物からなる群から選択される、方法。 - 請求項14に記載の方法であって、
前記ケイ素含有反応物質は、ケイ素及びアミノ基の部位に炭素含有置換基を有するアミノシランである、方法。 - 請求項11から請求項15のいずれか一項に記載の方法であって、
前記窒素含有反応物質は、アンモニア、ヒドラジン、アミン及びこれらの混合物からなる群から選択される、方法。 - 請求項11から請求項16のいずれか一項に記載の方法であって、
前記ケイ素含有膜は、SiN、SiCN、SiON又はSiONCからなる群から選択される、方法。 - 請求項11から請求項17のいずれか一項に記載の方法であって、
前記ケイ素含有膜はSiCNである、方法。 - 半導体ウエハ上に窒化ケイ素膜を蒸着する装置であって、
(a)反応チャンバと、
(b)紫外線源と、
(c)反応物質入口と、
(d)前記反応チャンバ内に窒素含有反応物質の気相流を流入させる命令と、前記反応チャンバ内にケイ素含有反応物質の気相流を流入させる命令と、前記窒素含有反応物質の気相流に紫外線を照射するとともに、前記ケイ素含有反応物質の気相流には紫外線を照射しない命令と、を有する制御部と
を備える装置。 - 請求項19に記載の装置であって、
前記反応チャンバ内で、前記窒素含有反応物質の気相流に紫外線が照射される、装置。 - 請求項19に記載の装置であって、
前記チャンバの上流で、前記窒素含有反応物質の気相流に紫外線が照射される、装置。 - 請求項19から請求項21のいずれか一項に記載の装置であって、
ケイ素含有前駆物質の気相流が流れる間に、前記窒素含有反応物質の気相流が流される、装置。 - 請求項19から請求項21のいずれか一項に記載の装置であって、
ケイ素含有前駆物質の気相流が流れる間には、前記窒素含有反応物質の気相流が流れない、装置。 - 半導体ウエハ上に窒化ケイ素膜を蒸着する装置であって、
(a)反応チャンバと、
(b)前記反応チャンバに対して遠隔のプラズマ源と、
(c)反応物質入口と、
(d)前記遠隔プラズマチャンバ内に窒素含有反応物質の気相流を流入させる命令と、前記遠隔プラズマ発生装置から前記反応チャンバ内に活性化窒素含有種を流入させる命令と、前記反応チャンバ内にケイ素含有反応物質の気相流を流入させる命令と、を有する制御部と
を備える装置。 - 請求項24に記載の装置であって、
ケイ素含有前駆物質の気相流が流れる間に、前記窒素含有反応物質の気相流が流される、装置。 - 請求項25に記載の方法であって、
ケイ素含有前駆物質の気相流が流れる間には、前記窒素含有反応物質の気相流が流れない、装置。
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Also Published As
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CN104081505A (zh) | 2014-10-01 |
US8647993B2 (en) | 2014-02-11 |
KR20130086989A (ko) | 2013-08-05 |
TW201349346A (zh) | 2013-12-01 |
US20130196516A1 (en) | 2013-08-01 |
US20140051262A9 (en) | 2014-02-20 |
SG11201404315RA (en) | 2014-08-28 |
WO2013112727A1 (en) | 2013-08-01 |
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