JP2008506262A - 応力制御を伴う窒化シリコン膜 - Google Patents
応力制御を伴う窒化シリコン膜 Download PDFInfo
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- JP2008506262A JP2008506262A JP2007520460A JP2007520460A JP2008506262A JP 2008506262 A JP2008506262 A JP 2008506262A JP 2007520460 A JP2007520460 A JP 2007520460A JP 2007520460 A JP2007520460 A JP 2007520460A JP 2008506262 A JP2008506262 A JP 2008506262A
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- 229910052581 Si3N4 Inorganic materials 0.000 title description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title description 6
- 150000004767 nitrides Chemical class 0.000 claims abstract description 265
- 239000000758 substrate Substances 0.000 claims abstract description 248
- 230000008021 deposition Effects 0.000 claims abstract description 195
- 238000000034 method Methods 0.000 claims abstract description 86
- 230000035939 shock Effects 0.000 claims abstract description 28
- 238000000151 deposition Methods 0.000 claims description 218
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 45
- 229910052710 silicon Inorganic materials 0.000 claims description 44
- 239000010703 silicon Substances 0.000 claims description 44
- 239000004065 semiconductor Substances 0.000 claims description 41
- 125000006850 spacer group Chemical group 0.000 claims description 35
- 230000001939 inductive effect Effects 0.000 claims description 17
- 229910021332 silicide Inorganic materials 0.000 claims description 9
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 9
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 13
- 239000010410 layer Substances 0.000 description 200
- 238000012545 processing Methods 0.000 description 60
- 239000007789 gas Substances 0.000 description 51
- 108091006146 Channels Proteins 0.000 description 48
- 239000002243 precursor Substances 0.000 description 32
- 238000010438 heat treatment Methods 0.000 description 27
- 238000006243 chemical reaction Methods 0.000 description 26
- 238000012546 transfer Methods 0.000 description 16
- 239000000463 material Substances 0.000 description 15
- 230000001965 increasing effect Effects 0.000 description 13
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 11
- 229910000077 silane Inorganic materials 0.000 description 11
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 8
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000012159 carrier gas Substances 0.000 description 7
- 238000005137 deposition process Methods 0.000 description 7
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000012530 fluid Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- HDZGCSFEDULWCS-UHFFFAOYSA-N monomethylhydrazine Chemical compound CNN HDZGCSFEDULWCS-UHFFFAOYSA-N 0.000 description 6
- GYKCNRSSMOLMPO-UHFFFAOYSA-N n-[diethylamino(ethyl)silyl]-n-ethylethanamine Chemical compound CCN(CC)[SiH](CC)N(CC)CC GYKCNRSSMOLMPO-UHFFFAOYSA-N 0.000 description 6
- SSCVMVQLICADPI-UHFFFAOYSA-N n-methyl-n-[tris(dimethylamino)silyl]methanamine Chemical compound CN(C)[Si](N(C)C)(N(C)C)N(C)C SSCVMVQLICADPI-UHFFFAOYSA-N 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 6
- JHGCXUUFRJCMON-UHFFFAOYSA-J silicon(4+);tetraiodide Chemical compound [Si+4].[I-].[I-].[I-].[I-] JHGCXUUFRJCMON-UHFFFAOYSA-J 0.000 description 6
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- FFXRCCZYEXDGRJ-UHFFFAOYSA-N n-bis(propan-2-ylamino)silylpropan-2-amine Chemical compound CC(C)N[SiH](NC(C)C)NC(C)C FFXRCCZYEXDGRJ-UHFFFAOYSA-N 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- DVHMVRMYGHTALQ-UHFFFAOYSA-N silylhydrazine Chemical compound NN[SiH3] DVHMVRMYGHTALQ-UHFFFAOYSA-N 0.000 description 5
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- 239000007983 Tris buffer Substances 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- GIRKRMUMWJFNRI-UHFFFAOYSA-N tris(dimethylamino)silicon Chemical compound CN(C)[Si](N(C)C)N(C)C GIRKRMUMWJFNRI-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000004590 computer program Methods 0.000 description 3
- 238000009833 condensation Methods 0.000 description 3
- 230000005494 condensation Effects 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 description 2
- -1 dimethylhydrazino Chemical group 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- NYWBESNKHBNIFS-UHFFFAOYSA-N 1,1-dimethyl-2-tris(2,2-dimethylhydrazinyl)silylhydrazine Chemical compound CN(C)N[Si](NN(C)C)(NN(C)C)NN(C)C NYWBESNKHBNIFS-UHFFFAOYSA-N 0.000 description 1
- ANEOQSDZHUAKPH-UHFFFAOYSA-N 2-[(2,2-dimethylhydrazinyl)-ethylsilyl]-1,1-dimethylhydrazine Chemical compound CN(C)N[SiH](CC)NN(C)C ANEOQSDZHUAKPH-UHFFFAOYSA-N 0.000 description 1
- OZPKQCRMNJXCGZ-UHFFFAOYSA-N 2-[(2,2-dimethylhydrazinyl)-methylsilyl]-1,1-dimethylhydrazine Chemical compound CN(C)N[SiH](C)NN(C)C OZPKQCRMNJXCGZ-UHFFFAOYSA-N 0.000 description 1
- WSEZIRYWIYEDEK-UHFFFAOYSA-N 2-[bis(2,2-dimethylhydrazinyl)-ethylsilyl]-1,1-dimethylhydrazine Chemical compound CN(C)N[Si](CC)(NN(C)C)NN(C)C WSEZIRYWIYEDEK-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 241000243251 Hydra Species 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- VYIRVGYSUZPNLF-UHFFFAOYSA-N n-(tert-butylamino)silyl-2-methylpropan-2-amine Chemical compound CC(C)(C)N[SiH2]NC(C)(C)C VYIRVGYSUZPNLF-UHFFFAOYSA-N 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- KNSVRQSOPKYFJN-UHFFFAOYSA-N tert-butylsilicon Chemical compound CC(C)(C)[Si] KNSVRQSOPKYFJN-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
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- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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Abstract
【選択図】 図1B
Description
[0041]多層窒化物エッチストップスタック19を形成するため、基板12は、単一ウエハ堆積チャンバに配置される。そのチャンバは、所望の処理温度及び処理圧力に設定される。基板12は、最初に、例えば、堆積チャンバのヒータに接触させないことにより、低温に保たれる。基板12は、多層窒化物エッチストップスタック19の層を堆積する直前に処理温度に曝される。従って、基板12は、多層窒化物スタック19の各層の堆積前に処理温度まで予熱されないし、又、その処理温度の安定化状態とされていない。窒化物エッチストップの第1の層が形成される。それから、基板12は、冷却されるか、又は、そのチャンバから出される。それから、窒化物エッチストップの第2の層がそのチャンバにて形成される。基板12は、窒化物エッチストップ層の第2の層の堆積前に熱的ショックを受ける。
がチャンバ本体106の壁に沿って幾つかの物理的接触点を有するようにして、チャンバ本体106の壁に結合される。(例えば、図10に例示される接触点159参照)。温度制御ライナー109とチャンバ本体106の壁との間の物理的接触を最小とすることにより、伝導点が最小とされ、チャンバ本体106への熱損失が最小とされる。
Claims (33)
- 互いに重ねて形成された窒化物エッチストップ層を有する多層窒化物スタックを備え、上記窒化物エッチストップ層の各々は、膜形成処理を使用して形成されるアセンブリ。
- 上記窒化物エッチストップ層の各々は、互いに実質的に等しい厚さを有する、請求項1に記載のアセンブリ。
- 上記多層窒化物スタックは、該多層窒化物スタックが上に形成される基板に対して引張り応力を誘導する、請求項1に記載のアセンブリ。
- 上記多層窒化物スタックは、半導体デバイス上に形成されるコンフォーマル(conformal)膜である、請求項1に記載のアセンブリ。
- 上記多層窒化物スタックは、半導体デバイス上に形成されるコンフォーマル膜及び半導体デバイスのスペーサー壁のうちの少なくとも1つである、請求項1に記載のアセンブリ。
- ソース領域及びドレイン領域と、上記ソース領域と上記ドレイン領域との間に形成されたチャネル領域とを有する基板と、
上記基板上に形成されたゲートスタックと、
上記基板上に形成され、互いに重ねて形成された複数の窒化物層を有する窒化物スタックを含む引張り応力誘導層と、
を備える半導体デバイス。 - 上記複数の窒化物層の各層は、互いに実質的に等しい厚さを有する、請求項6に記載の半導体デバイス。
- 上記窒化物スタックは、上記チャネル領域に対して引張り応力を誘導する、請求項6に記載の半導体デバイス。
- 上記引張り応力は、約150−450メガパスカルの値である、請求項8に記載の半導体デバイス。
- 上記ゲートスタックの各側に堆積されたスペーサーを更に備え、各スペーサーは、窒化物で形成されている、請求項6に記載の半導体デバイス。
- 各スペーサーは、制御される低い引張り応力窒化物で形成される、請求項6に記載の半導体デバイス。
- 上記ゲートスタックの各側に堆積されたスペーサーを更に備え、各スペーサーは、互いに重ねて形成された複数の窒化物層を有する別の窒化物スタックで形成される、請求項6に記載の半導体デバイス。
- 上記窒化物スタックは、200オングストロームから1000オングストロームまでの範囲の合計の厚さを有する、請求項6に記載の半導体デバイス。
- 半導体デバイスを形成する方法において、
基板を与えるステップと、
上記基板上に半導体デバイスを形成するステップと、
上記基板上に引張り応力誘導層を形成するステップと、
を備え、上記引張り応力誘導層は、互いに重ねて形成される複数の窒化物層を含むような方法。 - 上記半導体デバイスは、ソース領域及びドレイン領域と、そこに形成されるゲートスタックとを有し、上記引張り応力誘導層は、上記ソース領域及びドレイン領域と上記ゲートスタックとの上に形成される、請求項14に記載の方法。
- 上記基板上に上記引張り応力誘導層を形成する前に半導体デバイス上にケイ化物層を形成するステップを更に備える、請求項15に記載の方法。
- 上記ソース領域、ドレイン領域及びゲートスタックに対するコンタクトを生成するステップを更に備える、請求項15に記載の方法。
- 上記引張り応力誘導層は、上記基板におけるチャネル領域へ引張り応力を誘導する、請求項15に記載の方法。
- 上記基板は、シリコン構成基板、単結晶シリコン基板、ゲルマニウムシリコン基板及びシリコン・オン・インシュレータ基板のうちの1つである、請求項15に記載の方法。
- 上記引張り応力誘導層は、約150メガパスカルと約450メガパスカルとの間の範囲の引張り応力を上記基板に誘導する、請求項15に記載の方法。
- 上記引張り応力誘導層は、単一ウエハ堆積チャンバにて形成される、請求項15に記載の方法。
- 上記引張り応力誘導層は、上記基板が堆積チャンバにて熱的ショックを与えられた直後に形成される、請求項15に記載の方法。
- 半導体デバイスを形成する方法において、
単一ウエハ堆積チャンバに基板を配置し、堆積の直前に上記基板に熱的ショックを与えるステップと、
上記基板上に該基板に引張り応力を誘導する第1の窒化物エッチストップ層を堆積するステップと、
を備える方法。 - 上記基板に熱的ショックを与えるステップは、上記基板を所望の堆積温度より実質的に低い温度に維持し、上記堆積の直前に上記所望の堆積温度で上記基板にショックを与えることを含む、請求項23に記載の方法。
- 上記基板に熱的ショックを与えるステップは、上記堆積前に上記単一ウエハ堆積チャンバのヒータの上方で一定距離離れたところに上記基板を維持し、上記堆積の直前に上記基板を上記ヒータに接触させることを含み、上記ヒータは、上記基板を所望の堆積温度へと加熱するように設定される、請求項23に記載の方法。
- 上記基板は、ソース領域及びドレイン領域と、そこに形成されたゲートスタックとを有し、上記引張り応力誘導層は、上記ソース領域及びドレイン領域と上記ゲートスタックとの上に形成される、請求項23に記載の方法。
- 上記第1の窒化物エッチストップ層を堆積する前に上記ソース領域及びドレイン領域と上記ゲートスタックとの上にケイ化物層を形成するステップを更に備える、請求項23に記載の方法。
- 上記第1の窒化物エッチストップ上に第2の窒化物エッチストップ層を堆積するステップを更に備え、上記第2の窒化物エッチストップ層及び第1の窒化物エッチストップは、上記基板に上記引張り応力を誘導する窒化物スタックを形成する、請求項23に記載の方法。
- 上記第2の窒化物エッチストップ層を堆積するステップは、
上記第1の窒化物エッチストップ層がそこに堆積された上記基板を、上記単一ウエハ堆積チャンバから取り出す段階と、
上記第2の窒化物エッチストップ層を堆積する直前に上記基板に熱的ショックを与える段階と、
を含む請求項28に記載の方法。 - 上記基板に熱的ショックを与える段階は、所望の堆積温度より実質的に低い温度に上記基板を維持し、上記堆積の直前に上記基板に上記所望の堆積温度でショックを与えることを含む、請求項29に記載の方法。
- 上記基板に熱的ショックを与える段階は、上記堆積の前に上記単一ウエハ堆積チャンバのヒータの上方で一定距離離れたところに上記基板を維持し、上記堆積の直前に上記基板を上記ヒータに接触させるようにすることを含む、請求項29に記載の方法。
- 上記基板は、ソース領域及びドレイン領域と、そこに形成されたゲートスタックとを有し、上記引張り応力誘導層は、上記ソース領域及びドレイン領域と上記ゲートスタックとの上に形成される、請求項29に記載の方法。
- 上記第1の窒化物エッチストップ層を堆積する前に上記ソース領域及びドレイン領域と上記ゲートスタックとの上にケイ化物層を形成するステップを更に含む、請求項32に記載の方法。
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US10/885,969 US7488690B2 (en) | 2004-07-06 | 2004-07-06 | Silicon nitride film with stress control |
PCT/US2005/023933 WO2006014471A1 (en) | 2004-07-06 | 2005-07-05 | Silicon nitride film with stress control |
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JP (1) | JP2008506262A (ja) |
KR (2) | KR100903891B1 (ja) |
CN (1) | CN100536161C (ja) |
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WO (1) | WO2006014471A1 (ja) |
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Also Published As
Publication number | Publication date |
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US20060009041A1 (en) | 2006-01-12 |
KR20080112370A (ko) | 2008-12-24 |
KR101022898B1 (ko) | 2011-03-16 |
TWI345553B (en) | 2011-07-21 |
WO2006014471A1 (en) | 2006-02-09 |
US7488690B2 (en) | 2009-02-10 |
CN1989622A (zh) | 2007-06-27 |
TW200604093A (en) | 2006-02-01 |
CN100536161C (zh) | 2009-09-02 |
KR20070029829A (ko) | 2007-03-14 |
KR100903891B1 (ko) | 2009-06-19 |
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