JP2014528899A5 - - Google Patents

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JP2014528899A5
JP2014528899A5 JP2014534826A JP2014534826A JP2014528899A5 JP 2014528899 A5 JP2014528899 A5 JP 2014528899A5 JP 2014534826 A JP2014534826 A JP 2014534826A JP 2014534826 A JP2014534826 A JP 2014534826A JP 2014528899 A5 JP2014528899 A5 JP 2014528899A5
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Japan
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boron
reaction
zone
gas
unreacted
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JP2014534826A
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Japanese (ja)
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JP2014528899A (ja
JP6133877B2 (ja
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Priority claimed from PCT/US2012/059357 external-priority patent/WO2013055688A1/en
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Publication of JP2014528899A5 publication Critical patent/JP2014528899A5/ja
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JP2014534826A 2011-10-10 2012-10-09 B2f4製造プロセス Active JP6133877B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161545546P 2011-10-10 2011-10-10
US61/545,546 2011-10-10
PCT/US2012/059357 WO2013055688A1 (en) 2011-10-10 2012-10-09 B2f4 manufacturing process

Publications (3)

Publication Number Publication Date
JP2014528899A JP2014528899A (ja) 2014-10-30
JP2014528899A5 true JP2014528899A5 (enExample) 2015-11-12
JP6133877B2 JP6133877B2 (ja) 2017-05-24

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ID=48082344

Family Applications (1)

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JP2014534826A Active JP6133877B2 (ja) 2011-10-10 2012-10-09 B2f4製造プロセス

Country Status (8)

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US (2) US9938156B2 (enExample)
EP (1) EP2776368A4 (enExample)
JP (1) JP6133877B2 (enExample)
KR (1) KR102012056B1 (enExample)
CN (2) CN104105662B (enExample)
SG (2) SG11201401337QA (enExample)
TW (1) TWI583442B (enExample)
WO (1) WO2013055688A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
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US8598022B2 (en) 2009-10-27 2013-12-03 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
TWI583442B (zh) 2011-10-10 2017-05-21 恩特葛瑞斯股份有限公司 B2f4之製造程序
KR20170004381A (ko) * 2015-07-02 2017-01-11 삼성전자주식회사 불순물 영역을 포함하는 반도체 장치의 제조 방법
JP7093736B2 (ja) * 2019-02-28 2022-06-30 株式会社神鋼環境ソリューション 蓋構造体及び蓋付タンク
JP7506085B2 (ja) * 2019-10-03 2024-06-25 パナソニック インテレクチュアル プロパティ コーポレーション オブ アメリカ 三次元データ符号化方法、三次元データ復号方法、三次元データ符号化装置、及び三次元データ復号装置

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