NO20093163L - Prosess for gjenvinning av silisiummetall av hoy renhet - Google Patents

Prosess for gjenvinning av silisiummetall av hoy renhet

Info

Publication number
NO20093163L
NO20093163L NO20093163A NO20093163A NO20093163L NO 20093163 L NO20093163 L NO 20093163L NO 20093163 A NO20093163 A NO 20093163A NO 20093163 A NO20093163 A NO 20093163A NO 20093163 L NO20093163 L NO 20093163L
Authority
NO
Norway
Prior art keywords
reactor
residues
reaction zone
sicl4
semiconductor devices
Prior art date
Application number
NO20093163A
Other languages
English (en)
Inventor
Per Bakke
Jorild Margrete Svalestuen
Robert Gibala
Grete Viddal Oi
Original Assignee
Norsk Hydro As
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Norsk Hydro As filed Critical Norsk Hydro As
Priority to NO20093163A priority Critical patent/NO20093163L/no
Publication of NO20093163L publication Critical patent/NO20093163L/no

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
    • C01B33/10715—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by reacting chlorine with silicon or a silicon-containing material
    • C01B33/10721—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by reacting chlorine with silicon or a silicon-containing material with the preferential formation of tetrachloride
    • C01B33/10726—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by reacting chlorine with silicon or a silicon-containing material with the preferential formation of tetrachloride from silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Silicon Compounds (AREA)
  • Processing Of Solid Wastes (AREA)

Abstract

Prosess for gjenbruk av skrap eller andre Si-rester av høyrent silisium, som for eksempel sagspon eller avskjær fra produksjon av solcelleskiver eller halvlederinnretninger, karakterisert ved at de tørre restene, avskjæret, og/eller Si-rester fra wafer-produksjonsprosesser eller halvlederenheter, brukes som råstoff sammen med metallurgisk silisium i en direkte kloreringsreaktor (1) der det produseres silisiumtetrakloid, SiCl4. Ureagerte rester eller andre små partikler som unnslipper fra reaksjonssonen ureagert blir fortløpende ført tilbake til reaktoren for videre klorering uansett størrelse. Utstyret som inkluderes i prosessen kan i tilegg til reaktoren (1) innbefatte en lagrings- og blandingsinnretning (2) for blanding og lagring av Si-materiale/restene, en utvinningsinnretning (3) for separasjon og utvinning av Si-holdige partikler som unnslipper fra reaksjonssonen i reaktoren og føres tilbake til reaksjonssonen i reaktoren av et tilbakeføringsorgan (9), en kondenseringsenhet (10) der de minste partiklene som unnslipper fra reaksjonssonen i reaktoren og utvinningsenheten samles i et slam sammen med flytende SiCl4, og en blandingsenhet (13) som tilføres ytterligere spon, avskjær og andre Si-rester fra wafer-produksjonsprosesser eller halvlederinnretninger, der de blandes med det eksisterende SiCL4/Si-slammet som så føres direkte til reaksjonssonen i reaktoren for kjøling og temperaturkontroll.
NO20093163A 2007-04-25 2009-10-16 Prosess for gjenvinning av silisiummetall av hoy renhet NO20093163L (no)

Priority Applications (1)

Application Number Priority Date Filing Date Title
NO20093163A NO20093163L (no) 2007-04-25 2009-10-16 Prosess for gjenvinning av silisiummetall av hoy renhet

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NO20072147 2007-04-25
PCT/NO2008/000141 WO2008133525A1 (en) 2007-04-25 2008-04-18 A process for the recycling of high purity silicon metal
NO20093163A NO20093163L (no) 2007-04-25 2009-10-16 Prosess for gjenvinning av silisiummetall av hoy renhet

Publications (1)

Publication Number Publication Date
NO20093163L true NO20093163L (no) 2009-10-16

Family

ID=39925883

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20093163A NO20093163L (no) 2007-04-25 2009-10-16 Prosess for gjenvinning av silisiummetall av hoy renhet

Country Status (7)

Country Link
US (1) US20100129281A1 (no)
EP (1) EP2150492A1 (no)
JP (1) JP2010526013A (no)
CN (1) CN101687652A (no)
NO (1) NO20093163L (no)
TW (1) TW200900352A (no)
WO (1) WO2008133525A1 (no)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101504914B (zh) * 2009-03-09 2011-03-23 无锡开源太阳能设备科技有限公司 一种改良的硅片切割液的冷却装置
DE102009020143A1 (de) * 2009-05-04 2010-11-11 Pv Silicon Forschungs- Und Produktionsgesellschaft Mbh Verfahren zur Aufbereitung von Sägeabfällen zur Rückgewinnung von Silizium für die Herstellung von Solarsilizium
DE102009046265A1 (de) * 2009-10-30 2011-05-19 Rheinisch-Westfälische Technische Hochschule Aachen Verfahren zur Aufarbeitung von Sägerückständen aus der Produktion von Silizium-Wafern
DE102010044108A1 (de) 2010-11-18 2012-05-24 Evonik Degussa Gmbh Herstellung von Chlorsilanen aus kleinstteiligem Reinstsilicium
US9139442B2 (en) 2011-10-18 2015-09-22 Toagosei Co. Ltd. Method for producing chloropolysilane and fluidized-bed reactor
JP2013103872A (ja) * 2011-11-16 2013-05-30 Yamaguchi Univ 廃シリコンからのハロシランの製造方法
KR101355816B1 (ko) * 2012-04-11 2014-01-28 한국지질자원연구원 실리콘 슬러지로부터 실리콘의 분리 및 회수방법
KR101352372B1 (ko) * 2012-04-12 2014-01-22 한국지질자원연구원 실리콘 슬러지로부터 실리콘염화물의 제조방법
DE102012018548B4 (de) 2012-09-20 2016-11-17 Technische Universität Bergakademie Freiberg Verfahren zur Verwertung von ausgedienten Solarmodulen und Solarzellen aus Silizium und siliziumhaltigen Bauelementen
CN114602429B (zh) * 2022-04-26 2023-03-14 中南大学 一种快速制备颗粒微生物炭载－多金属材料的工艺及设备
CN115108559B (zh) * 2022-07-14 2023-11-14 才敏 一种综合利用超细硅粉废弃物生产四氯化硅的工艺

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2843458A (en) * 1955-10-20 1958-07-15 Cabot Godfrey L Inc Process for producing silicon tetrachloride
DE2623290A1 (de) * 1976-05-25 1977-12-08 Wacker Chemitronic Verfahren zur herstellung von trichlorsilan und/oder siliciumtetrachlorid
US4224297A (en) * 1977-07-22 1980-09-23 Wacker-Chemie Gmbh Method for reactivating a residue containing elemental silicon
US4307242A (en) * 1980-10-03 1981-12-22 General Electric Company Process for removing impurities from residual silicon powder
US4328353A (en) * 1981-03-30 1982-05-04 General Electric Company Process for the manufacture of organohalosilanes
JPS58217420A (ja) * 1982-06-10 1983-12-17 Denki Kagaku Kogyo Kk 四塩化ケイ素の製法
DE3442370C2 (de) * 1983-11-21 1994-04-07 Denki Kagaku Kogyo Kk Verfahren zur Herstellung von Siliciumtetrachlorid
DE3809784C1 (no) * 1988-03-23 1989-07-13 Huels Ag, 4370 Marl, De
JPH09194490A (ja) * 1996-01-12 1997-07-29 Shin Etsu Chem Co Ltd シラン類の製造方法
JPH1171383A (ja) * 1997-08-29 1999-03-16 Shin Etsu Chem Co Ltd アルキルハロシランの製造方法
DE10118483C1 (de) * 2001-04-12 2002-04-18 Wacker Chemie Gmbh Staubrückführung bei der Direktsynthese von Chlor- und Methylchlorsilanen in Wirbelschicht

Also Published As

Publication number Publication date
WO2008133525A1 (en) 2008-11-06
JP2010526013A (ja) 2010-07-29
TW200900352A (en) 2009-01-01
CN101687652A (zh) 2010-03-31
US20100129281A1 (en) 2010-05-27
EP2150492A1 (en) 2010-02-10

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