TWI583442B - Ｂ２ｆ４之製造程序 - Google Patents
Ｂ２ｆ４之製造程序 Download PDFInfo
- Publication number
- TWI583442B TWI583442B TW101137163A TW101137163A TWI583442B TW I583442 B TWI583442 B TW I583442B TW 101137163 A TW101137163 A TW 101137163A TW 101137163 A TW101137163 A TW 101137163A TW I583442 B TWI583442 B TW I583442B
- Authority
- TW
- Taiwan
- Prior art keywords
- boron
- zone
- reaction
- reactor
- gas
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 claims description 261
- 229910015900 BF3 Inorganic materials 0.000 claims description 229
- 238000006243 chemical reaction Methods 0.000 claims description 179
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 124
- 229910052796 boron Inorganic materials 0.000 claims description 124
- 239000007787 solid Substances 0.000 claims description 87
- 238000000034 method Methods 0.000 claims description 69
- 239000000203 mixture Substances 0.000 claims description 52
- 238000009833 condensation Methods 0.000 claims description 41
- 230000005494 condensation Effects 0.000 claims description 41
- 150000001875 compounds Chemical class 0.000 claims description 40
- 239000000463 material Substances 0.000 claims description 28
- 230000008569 process Effects 0.000 claims description 28
- 239000000047 product Substances 0.000 claims description 27
- 239000000376 reactant Substances 0.000 claims description 24
- 238000001816 cooling Methods 0.000 claims description 22
- 239000007795 chemical reaction product Substances 0.000 claims description 21
- 239000002245 particle Substances 0.000 claims description 18
- 239000003153 chemical reaction reagent Substances 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000013078 crystal Substances 0.000 claims description 13
- 238000011084 recovery Methods 0.000 claims description 13
- 238000001914 filtration Methods 0.000 claims description 12
- 239000010453 quartz Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 238000000746 purification Methods 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 8
- 230000000694 effects Effects 0.000 claims description 7
- 239000011343 solid material Substances 0.000 claims description 6
- YFSQMOVEGCCDJL-UHFFFAOYSA-N boron monofluoride Chemical compound F[B] YFSQMOVEGCCDJL-UHFFFAOYSA-N 0.000 claims description 5
- 238000004064 recycling Methods 0.000 claims description 5
- 229920006169 Perfluoroelastomer Polymers 0.000 claims description 4
- 238000010926 purge Methods 0.000 claims description 4
- 230000009257 reactivity Effects 0.000 claims description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- 239000010935 stainless steel Substances 0.000 claims description 4
- 238000009472 formulation Methods 0.000 claims description 3
- 239000008187 granular material Substances 0.000 claims description 3
- 239000013618 particulate matter Substances 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- 150000002367 halogens Chemical class 0.000 claims description 2
- 239000007859 condensation product Substances 0.000 claims 3
- 239000007789 gas Substances 0.000 description 78
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 58
- 239000000543 intermediate Substances 0.000 description 46
- 229910052757 nitrogen Inorganic materials 0.000 description 29
- 238000010438 heat treatment Methods 0.000 description 26
- 239000007788 liquid Substances 0.000 description 26
- 239000002243 precursor Substances 0.000 description 19
- -1 boron ion Chemical class 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 12
- 238000004140 cleaning Methods 0.000 description 11
- 238000009826 distribution Methods 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 238000000605 extraction Methods 0.000 description 8
- 230000006698 induction Effects 0.000 description 7
- 229910002804 graphite Inorganic materials 0.000 description 6
- 239000010439 graphite Substances 0.000 description 6
- 239000006227 byproduct Substances 0.000 description 5
- 239000012467 final product Substances 0.000 description 5
- 239000012530 fluid Substances 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 238000012544 monitoring process Methods 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000003463 adsorbent Substances 0.000 description 4
- 150000001639 boron compounds Chemical class 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000002826 coolant Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- WUWOPJNIAKTBSJ-UHFFFAOYSA-N diboron tetrafluoride Chemical compound FB(F)B(F)F WUWOPJNIAKTBSJ-UHFFFAOYSA-N 0.000 description 4
- OKZIUSOJQLYFSE-UHFFFAOYSA-N difluoroboron Chemical compound F[B]F OKZIUSOJQLYFSE-UHFFFAOYSA-N 0.000 description 4
- 238000004821 distillation Methods 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 4
- 238000011010 flushing procedure Methods 0.000 description 4
- 239000007943 implant Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000005086 pumping Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 239000013067 intermediate product Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- 229910001369 Brass Inorganic materials 0.000 description 2
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000010951 brass Substances 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 229920003247 engineering thermoplastic Polymers 0.000 description 2
- 239000007770 graphite material Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000013021 overheating Methods 0.000 description 2
- 238000004886 process control Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- ZQXCQTAELHSNAT-UHFFFAOYSA-N 1-chloro-3-nitro-5-(trifluoromethyl)benzene Chemical compound [O-][N+](=O)C1=CC(Cl)=CC(C(F)(F)F)=C1 ZQXCQTAELHSNAT-UHFFFAOYSA-N 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- KPSZQYZCNSCYGG-UHFFFAOYSA-N [B].[B] Chemical compound [B].[B] KPSZQYZCNSCYGG-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000002902 bimodal effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910021538 borax Inorganic materials 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 235000011089 carbon dioxide Nutrition 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 238000005056 compaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000004035 construction material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 239000012043 crude product Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000005202 decontamination Methods 0.000 description 1
- 230000003588 decontaminative effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- OUJISMBVLMMJNR-UHFFFAOYSA-L dicesium;difluoride Chemical compound [F-].[F-].[Cs+].[Cs+] OUJISMBVLMMJNR-UHFFFAOYSA-L 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 238000004508 fractional distillation Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002808 molecular sieve Substances 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000678 plasma activation Methods 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 238000011027 product recovery Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 1
- 239000004328 sodium tetraborate Substances 0.000 description 1
- 235000010339 sodium tetraborate Nutrition 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B35/00—Boron; Compounds thereof
- C01B35/06—Boron halogen compounds
- C01B35/061—Halides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J15/00—Chemical processes in general for reacting gaseous media with non-particulate solids, e.g. sheet material; Apparatus specially adapted therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/0053—Details of the reactor
- B01J19/0073—Sealings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
- B01J19/122—Incoherent waves
- B01J19/129—Radiofrequency
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/03—Pressure vessels, or vacuum vessels, having closure members or seals specially adapted therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J7/00—Apparatus for generating gases
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00049—Controlling or regulating processes
- B01J2219/00051—Controlling the temperature
- B01J2219/00074—Controlling the temperature by indirect heating or cooling employing heat exchange fluids
- B01J2219/00087—Controlling the temperature by indirect heating or cooling employing heat exchange fluids with heat exchange elements outside the reactor
- B01J2219/00094—Jackets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00049—Controlling or regulating processes
- B01J2219/00051—Controlling the temperature
- B01J2219/00139—Controlling the temperature using electromagnetic heating
- B01J2219/00148—Radiofrequency
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/02—Apparatus characterised by their chemically-resistant properties
- B01J2219/025—Apparatus characterised by their chemically-resistant properties characterised by the construction materials of the reactor vessel proper
- B01J2219/0254—Glass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/02—Apparatus characterised by their chemically-resistant properties
- B01J2219/025—Apparatus characterised by their chemically-resistant properties characterised by the construction materials of the reactor vessel proper
- B01J2219/0272—Graphite
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/02—Apparatus characterised by their chemically-resistant properties
- B01J2219/025—Apparatus characterised by their chemically-resistant properties characterised by the construction materials of the reactor vessel proper
- B01J2219/0277—Metal based
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J2219/0873—Materials to be treated
- B01J2219/0881—Two or more materials
- B01J2219/0886—Gas-solid
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/141—Feedstock
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161545546P | 2011-10-10 | 2011-10-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201330923A TW201330923A (zh) | 2013-08-01 |
| TWI583442B true TWI583442B (zh) | 2017-05-21 |
Family
ID=48082344
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101137163A TWI583442B (zh) | 2011-10-10 | 2012-10-08 | Ｂ２ｆ４之製造程序 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US9938156B2 (enExample) |
| EP (1) | EP2776368A4 (enExample) |
| JP (1) | JP6133877B2 (enExample) |
| KR (1) | KR102012056B1 (enExample) |
| CN (2) | CN104105662B (enExample) |
| SG (2) | SG11201401337QA (enExample) |
| TW (1) | TWI583442B (enExample) |
| WO (1) | WO2013055688A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101297917B1 (ko) * | 2005-08-30 | 2013-08-27 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 대안적인 불화 붕소 전구체를 이용한 붕소 이온 주입 방법,및 주입을 위한 대형 수소화붕소의 형성 방법 |
| US8598022B2 (en) | 2009-10-27 | 2013-12-03 | Advanced Technology Materials, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
| TWI583442B (zh) | 2011-10-10 | 2017-05-21 | 恩特葛瑞斯股份有限公司 | Ｂ２ｆ４之製造程序 |
| KR20170004381A (ko) * | 2015-07-02 | 2017-01-11 | 삼성전자주식회사 | 불순물 영역을 포함하는 반도체 장치의 제조 방법 |
| JP7093736B2 (ja) * | 2019-02-28 | 2022-06-30 | 株式会社神鋼環境ソリューション | 蓋構造体及び蓋付タンク |
| JP7506085B2 (ja) * | 2019-10-03 | 2024-06-25 | パナソニック インテレクチュアル プロパティ コーポレーション オブ アメリカ | 三次元データ符号化方法、三次元データ復号方法、三次元データ符号化装置、及び三次元データ復号装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW482759B (en) * | 1998-12-23 | 2002-04-11 | Du Pont | Vapor phase oxidation of acrolein to acrylic acid |
| TW201126005A (en) * | 2005-08-30 | 2011-08-01 | Advanced Tech Materials | Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation |
Family Cites Families (83)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2994652A (en) * | 1959-04-06 | 1961-08-01 | Jack W Frazer | Method for producing diboron tetrachloride |
| US3180708A (en) * | 1961-03-22 | 1965-04-27 | United States Borax Chem | Method for preparing diboron tetrafluoride |
| US3180707A (en) | 1961-03-22 | 1965-04-27 | United States Borax Chem | Method for preparing diboron tetrafluoride |
| JPS588071A (ja) | 1981-07-08 | 1983-01-18 | Nippon Iyakuhin Kogyo Kk | ２−ベンゾチアゾリノン−３−酢酸アミド誘導体またはその薬学的に活性な塩類の製造法 |
| US4459427A (en) | 1981-10-31 | 1984-07-10 | The British Petroleum Company P.L.C. | Process for the conversion of an alkane to a mixture of an alcohol and a ketone |
| JPS60221566A (ja) | 1984-04-18 | 1985-11-06 | Agency Of Ind Science & Technol | 薄膜形成装置 |
| JPS61186212A (ja) * | 1985-02-12 | 1986-08-19 | Seitetsu Kagaku Co Ltd | ジシランの製造方法 |
| US4722978A (en) | 1985-08-30 | 1988-02-02 | The B. F. Goodrich Company | Allyl terminated macromolecular monomers of polyethers |
| US4680358A (en) | 1985-11-08 | 1987-07-14 | The B F Goodrich Company | Styryl terminated macromolecular monomers of polyethers |
| JPS6315228A (ja) | 1986-07-08 | 1988-01-22 | Asahi Glass Co Ltd | エレクトロクロミツク素子 |
| JPH0772167B2 (ja) | 1986-09-04 | 1995-08-02 | サントリー株式会社 | ４―アミノ―３―ヒドロキシ酪酸誘導体の製法 |
| US4851255A (en) | 1986-12-29 | 1989-07-25 | Air Products And Chemicals, Inc. | Ion implant using tetrafluoroborate |
| JPS6483147A (en) | 1987-09-25 | 1989-03-28 | Olympus Optical Co | Manufacture of chemical sensitivity field effect transistor |
| JPH01225117A (ja) | 1988-03-04 | 1989-09-08 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置の製造方法及びその製造装置 |
| JP2699549B2 (ja) | 1988-06-03 | 1998-01-19 | 日産化学工業株式会社 | ４―ベンゾイル―５―ヒドロキシピラゾール類の製法 |
| JP2533639B2 (ja) | 1988-10-07 | 1996-09-11 | 株式会社富士電機総合研究所 | Ｐ形炭素添加非晶質シリコンの生成方法 |
| US4987933A (en) | 1989-03-03 | 1991-01-29 | Eaton Corporation | Fluid flow control method and apparatus for minimizing particle contamination |
| JPH05115786A (ja) | 1991-10-31 | 1993-05-14 | Idemitsu Petrochem Co Ltd | 三フツ化ホウ素の回収方法 |
| JPH05254808A (ja) | 1992-03-10 | 1993-10-05 | Semiconductor Energy Lab Co Ltd | 窒化ほう素の作製方法 |
| JPH0680681A (ja) | 1992-07-15 | 1994-03-22 | Nippon Kayaku Co Ltd | ホスホニウム化合物及びそれを用いた電子写真用トナー |
| FR2702467B1 (fr) * | 1993-03-11 | 1995-04-28 | Air Liquide | Procédé de préparation du disilane à partir du monosilane par décharge électrique et piégeage cryogénique et nouveau réacteur pour sa mise en Óoeuvre. |
| KR950703212A (ko) | 1993-06-23 | 1995-08-23 | 마에다 카쭈노수케 | 전지용전극, 그것을 사용한 2차전지 및 전지용 전극의 제조방법("Electrode for Battery, Secondary Battery Using the Same and Process for producing Electrode for Battery") |
| JPH0790201A (ja) | 1993-09-22 | 1995-04-04 | Hokko Chem Ind Co Ltd | 水中防汚塗料 |
| US5749937A (en) | 1995-03-14 | 1998-05-12 | Lockheed Idaho Technologies Company | Fast quench reactor and method |
| US5977552A (en) * | 1995-11-24 | 1999-11-02 | Applied Materials, Inc. | Boron ion sources for ion implantation apparatus |
| US5993766A (en) | 1996-05-20 | 1999-11-30 | Advanced Technology Materials, Inc. | Gas source and dispensing system |
| GB2317265A (en) | 1996-09-13 | 1998-03-18 | Aea Technology Plc | Radio frequency plasma generator |
| JPH10251592A (ja) | 1997-03-07 | 1998-09-22 | Kansai Paint Co Ltd | 塗料組成物およびその塗装法 |
| US5935283A (en) | 1996-12-31 | 1999-08-10 | Atmi Ecosys Corporation | Clog-resistant entry structure for introducing a particulate solids-containing and/or solids-forming gas stream to a gas processing system |
| US6086837A (en) | 1997-04-24 | 2000-07-11 | Bechtel Bwxt Idaho, Llc | Method of synthesizing enriched decaborane for use in generating boron neutron capture therapy pharmaceuticals |
| US6096467A (en) | 1997-11-19 | 2000-08-01 | Mita Industrial Co., Ltd. | Positive charging color toner |
| US6135128A (en) | 1998-03-27 | 2000-10-24 | Eaton Corporation | Method for in-process cleaning of an ion source |
| JP2000135402A (ja) | 1998-10-29 | 2000-05-16 | Nippon Petrochem Co Ltd | フッ化ストロンチウムを使用した三フッ化ホウ素の除去方法および回収方法 |
| US6614082B1 (en) | 1999-01-29 | 2003-09-02 | Micron Technology, Inc. | Fabrication of semiconductor devices with transition metal boride films as diffusion barriers |
| US6376664B1 (en) | 1999-03-17 | 2002-04-23 | The Ohio State University | Cyclic bis-benzimidazole ligands and metal complexes thereof |
| AU5692900A (en) * | 1999-06-25 | 2001-01-31 | Avantium International B.V. | Reactor vessel array |
| US6475276B1 (en) | 1999-10-15 | 2002-11-05 | Asm Microchemistry Oy | Production of elemental thin films using a boron-containing reducing agent |
| US6452338B1 (en) | 1999-12-13 | 2002-09-17 | Semequip, Inc. | Electron beam ion source with integral low-temperature vaporizer |
| EP1245036B1 (en) | 1999-12-13 | 2013-06-19 | Semequip, Inc. | Ion implantation ion source |
| ATE249532T1 (de) | 2000-02-04 | 2003-09-15 | Aixtron Ag | Vorrichtung und verfahren zum abscheiden einer oder mehrerer schichten auf ein substrat |
| US6420304B1 (en) | 2000-04-20 | 2002-07-16 | China Petrochemical Development Corporation | Polymer-supported carbonylation catalyst and its use |
| JP2004501987A (ja) | 2000-06-19 | 2004-01-22 | キンバリー クラーク ワールドワイド インコーポレイテッド | 新規な光開始剤及びその用途 |
| KR20000072651A (ko) | 2000-08-08 | 2000-12-05 | 이관호 | 식물 신품종 쌈추 및 그 육종방법 |
| US6893907B2 (en) | 2002-06-05 | 2005-05-17 | Applied Materials, Inc. | Fabrication of silicon-on-insulator structure using plasma immersion ion implantation |
| US7094670B2 (en) | 2000-08-11 | 2006-08-22 | Applied Materials, Inc. | Plasma immersion ion implantation process |
| US20020058385A1 (en) | 2000-10-26 | 2002-05-16 | Taiji Noda | Semiconductor device and method for manufacturing the same |
| US6670623B2 (en) | 2001-03-07 | 2003-12-30 | Advanced Technology Materials, Inc. | Thermal regulation of an ion implantation system |
| KR100412129B1 (ko) | 2001-04-30 | 2003-12-31 | 주식회사 하이닉스반도체 | 반도체소자의 접합 형성방법 |
| AU2002364611A1 (en) | 2001-12-31 | 2003-07-24 | The Ohio State University Research Foundation | Strapped and modified bis (benzimidazole) diamides for asymmetric catalysts and other applications |
| GB2387022B (en) | 2002-03-28 | 2005-12-21 | Applied Materials Inc | Monatomic boron ion source and method |
| US7138768B2 (en) | 2002-05-23 | 2006-11-21 | Varian Semiconductor Equipment Associates, Inc. | Indirectly heated cathode ion source |
| US20040002202A1 (en) | 2002-06-26 | 2004-01-01 | Horsky Thomas Neil | Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ions |
| KR100464935B1 (ko) | 2002-09-17 | 2005-01-05 | 주식회사 하이닉스반도체 | 불화붕소화합물 도핑에 의한 초박형 에피채널을 갖는반도체소자의 제조 방법 |
| US20040110351A1 (en) | 2002-12-05 | 2004-06-10 | International Business Machines Corporation | Method and structure for reduction of junction capacitance in a semiconductor device and formation of a uniformly lowered threshold voltage device |
| EP1584104A4 (en) | 2002-12-12 | 2010-05-26 | Tel Epion Inc | RE-CRYSTALLIZATION OF A SEMICONDUCTIVE SURFACE FILM AND SEMICONDUCTOR DOTING BY MEANS OF ENERGETIC CLUSTER RADIATION |
| WO2006062536A2 (en) | 2004-12-03 | 2006-06-15 | Epion Corporation | Formation of ultra-shallow junctions by gas-cluster ion irridation |
| US6780896B2 (en) | 2002-12-20 | 2004-08-24 | Kimberly-Clark Worldwide, Inc. | Stabilized photoinitiators and applications thereof |
| WO2005001869A2 (en) | 2003-06-06 | 2005-01-06 | Ionwerks | Gold implantation/deposition of biological samples for laser desorption three dimensional depth profiling of tissues |
| JP4619951B2 (ja) | 2003-08-25 | 2011-01-26 | パナソニック株式会社 | 不純物導入層の形成方法 |
| JP2005093518A (ja) | 2003-09-12 | 2005-04-07 | Matsushita Electric Ind Co Ltd | 不純物導入の制御方法および不純物導入装置 |
| TWI375660B (en) | 2004-01-22 | 2012-11-01 | Semequip Inc | Isotopically-enriched boranes and methods of preparing them |
| TWI372725B (en) | 2004-01-30 | 2012-09-21 | Semequip Inc | Methods of synthesis of isotopically enriched borohydride and methods of synthesis of isotopically enriched boranes |
| US8747805B2 (en) | 2004-02-11 | 2014-06-10 | Velocys, Inc. | Process for conducting an equilibrium limited chemical reaction using microchannel technology |
| US7397048B2 (en) | 2004-09-17 | 2008-07-08 | Varian Semiconductor Equipment Associates, Inc. | Technique for boron implantation |
| US20060104851A1 (en) | 2004-11-12 | 2006-05-18 | Tillotson Brian J | Isotopic densification of propellant |
| US7687025B2 (en) | 2004-11-12 | 2010-03-30 | The Boeing Company | Isotopic lightening |
| WO2006095086A2 (fr) | 2005-03-07 | 2006-09-14 | Laurence Faure | Traçabilite des anomalies du cycle cellulaire ciblant l'oncologie et la neurodegenerescence. |
| US20100112795A1 (en) | 2005-08-30 | 2010-05-06 | Advanced Technology Materials, Inc. | Method of forming ultra-shallow junctions for semiconductor devices |
| DE102005054218B4 (de) | 2005-11-14 | 2011-06-09 | Infineon Technologies Ag | Verfahren zum Herstellen eines Halbleiterelements und Halbleiterelement |
| WO2007071327A1 (de) | 2005-12-20 | 2007-06-28 | H.C. Starck Gmbh | Metallboride |
| US20070178679A1 (en) | 2006-01-28 | 2007-08-02 | Varian Semiconductor Equipment Associates, Inc. | Methods of implanting ions and ion sources used for same |
| US7473606B2 (en) | 2006-02-22 | 2009-01-06 | United Microelectronics Corp. | Method for fabricating metal-oxide semiconductor transistors |
| US20080241805A1 (en) | 2006-08-31 | 2008-10-02 | Q-Track Corporation | System and method for simulated dosimetry using a real time locating system |
| US7887634B2 (en) | 2006-12-22 | 2011-02-15 | Infineon Technologies Ag | Method of producing a semiconductor element and semiconductor element |
| US7833886B2 (en) | 2007-05-14 | 2010-11-16 | Infineon Technologies Ag | Method of producing a semiconductor element in a substrate |
| CN101214970B (zh) | 2008-01-17 | 2010-06-16 | 核工业理化工程研究院华核新技术开发公司 | 制备高纯三氟化硼气体的工艺方法及设备 |
| CN102047376A (zh) | 2008-05-30 | 2011-05-04 | 艾克塞利斯科技公司 | 注入硼烷时在半导体基片上的粒子控制 |
| US7759657B2 (en) | 2008-06-19 | 2010-07-20 | Axcelis Technologies, Inc. | Methods for implanting B22Hx and its ionized lower mass byproducts |
| US20100266087A1 (en) | 2009-04-16 | 2010-10-21 | Searete Llc, A Limited Liability Corporation Of The State Of Delaware | Nuclear fission reactor, flow control assembly, methods therefor and a flow control assembly system |
| EP3062330A3 (en) | 2009-10-27 | 2016-11-16 | Entegris, Inc. | Ion implantation system and method |
| US8062965B2 (en) * | 2009-10-27 | 2011-11-22 | Advanced Technology Materials, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
| CN106237934B (zh) * | 2010-08-30 | 2019-08-27 | 恩特格里斯公司 | 由固体材料制备化合物或其中间体以及使用该化合物和中间体的设备和方法 |
| TWI583442B (zh) | 2011-10-10 | 2017-05-21 | 恩特葛瑞斯股份有限公司 | Ｂ２ｆ４之製造程序 |
-
2012
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- 2012-10-09 CN CN201280060937.7A patent/CN104105662B/zh active Active
- 2012-10-09 KR KR1020147012352A patent/KR102012056B1/ko active Active
- 2012-10-09 WO PCT/US2012/059357 patent/WO2013055688A1/en not_active Ceased
- 2012-10-09 EP EP12839531.6A patent/EP2776368A4/en not_active Withdrawn
- 2012-10-09 US US14/350,543 patent/US9938156B2/en active Active
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-
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- 2018-02-20 US US15/899,692 patent/US20190071313A1/en not_active Abandoned
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW482759B (en) * | 1998-12-23 | 2002-04-11 | Du Pont | Vapor phase oxidation of acrolein to acrylic acid |
| TW201126005A (en) * | 2005-08-30 | 2011-08-01 | Advanced Tech Materials | Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2014528899A (ja) | 2014-10-30 |
| EP2776368A1 (en) | 2014-09-17 |
| US20140301932A1 (en) | 2014-10-09 |
| CN105905916A (zh) | 2016-08-31 |
| US20190071313A1 (en) | 2019-03-07 |
| KR102012056B1 (ko) | 2019-08-19 |
| KR20140090187A (ko) | 2014-07-16 |
| WO2013055688A1 (en) | 2013-04-18 |
| TW201330923A (zh) | 2013-08-01 |
| CN104105662A (zh) | 2014-10-15 |
| JP6133877B2 (ja) | 2017-05-24 |
| EP2776368A4 (en) | 2015-07-29 |
| SG11201401337QA (en) | 2014-05-29 |
| CN105905916B (zh) | 2019-06-11 |
| CN104105662B (zh) | 2017-07-04 |
| SG10201602816XA (en) | 2016-05-30 |
| US9938156B2 (en) | 2018-04-10 |
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