CN104105662B - B2f4制造方法 - Google Patents

B2f4制造方法 Download PDF

Info

Publication number
CN104105662B
CN104105662B CN201280060937.7A CN201280060937A CN104105662B CN 104105662 B CN104105662 B CN 104105662B CN 201280060937 A CN201280060937 A CN 201280060937A CN 104105662 B CN104105662 B CN 104105662B
Authority
CN
China
Prior art keywords
boron
reaction
reactor
zone
reaction zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201280060937.7A
Other languages
English (en)
Chinese (zh)
Other versions
CN104105662A (zh
Inventor
奥列格·比尔
爱德华·E·琼斯
奇兰吉菲·皮迪
约瑟夫·D·斯威尼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Entegris Inc
Original Assignee
Advanced Technology Materials Inc
Entegris Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Technology Materials Inc, Entegris Inc filed Critical Advanced Technology Materials Inc
Priority to CN201610452337.5A priority Critical patent/CN105905916B/zh
Publication of CN104105662A publication Critical patent/CN104105662A/zh
Application granted granted Critical
Publication of CN104105662B publication Critical patent/CN104105662B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00—Boron; Compounds thereof
    • C01B35/06—Boron halogen compounds
    • C01B35/061—Halides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J15/00—Chemical processes in general for reacting gaseous media with non-particulate solids, e.g. sheet material; Apparatus specially adapted therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/0053—Details of the reactor
    • B01J19/0073—Sealings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
    • B01J19/122—Incoherent waves
    • B01J19/129—Radiofrequency
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/03—Pressure vessels, or vacuum vessels, having closure members or seals specially adapted therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J7/00—Apparatus for generating gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049—Controlling or regulating processes
    • B01J2219/00051—Controlling the temperature
    • B01J2219/00074—Controlling the temperature by indirect heating or cooling employing heat exchange fluids
    • B01J2219/00087—Controlling the temperature by indirect heating or cooling employing heat exchange fluids with heat exchange elements outside the reactor
    • B01J2219/00094—Jackets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049—Controlling or regulating processes
    • B01J2219/00051—Controlling the temperature
    • B01J2219/00139—Controlling the temperature using electromagnetic heating
    • B01J2219/00148—Radiofrequency
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/02—Apparatus characterised by their chemically-resistant properties
    • B01J2219/025—Apparatus characterised by their chemically-resistant properties characterised by the construction materials of the reactor vessel proper
    • B01J2219/0254—Glass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/02—Apparatus characterised by their chemically-resistant properties
    • B01J2219/025—Apparatus characterised by their chemically-resistant properties characterised by the construction materials of the reactor vessel proper
    • B01J2219/0272—Graphite
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/02—Apparatus characterised by their chemically-resistant properties
    • B01J2219/025—Apparatus characterised by their chemically-resistant properties characterised by the construction materials of the reactor vessel proper
    • B01J2219/0277—Metal based
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0873—Materials to be treated
    • B01J2219/0881—Two or more materials
    • B01J2219/0886—Gas-solid
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/141—Feedstock

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
CN201280060937.7A 2011-10-10 2012-10-09 B2f4制造方法 Active CN104105662B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610452337.5A CN105905916B (zh) 2011-10-10 2012-10-09 B2f4制造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161545546P 2011-10-10 2011-10-10
US61/545,546 2011-10-10
PCT/US2012/059357 WO2013055688A1 (en) 2011-10-10 2012-10-09 B2f4 manufacturing process

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201610452337.5A Division CN105905916B (zh) 2011-10-10 2012-10-09 B2f4制造方法

Publications (2)

Publication Number Publication Date
CN104105662A CN104105662A (zh) 2014-10-15
CN104105662B true CN104105662B (zh) 2017-07-04

Family

ID=48082344

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201280060937.7A Active CN104105662B (zh) 2011-10-10 2012-10-09 B2f4制造方法
CN201610452337.5A Active CN105905916B (zh) 2011-10-10 2012-10-09 B2f4制造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201610452337.5A Active CN105905916B (zh) 2011-10-10 2012-10-09 B2f4制造方法

Country Status (8)

Country Link
US (2) US9938156B2 (enExample)
EP (1) EP2776368A4 (enExample)
JP (1) JP6133877B2 (enExample)
KR (1) KR102012056B1 (enExample)
CN (2) CN104105662B (enExample)
SG (2) SG10201602816XA (enExample)
TW (1) TWI583442B (enExample)
WO (1) WO2013055688A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103170447B (zh) * 2005-08-30 2015-02-18 先进科技材料公司 使用替代的氟化含硼前驱体的硼离子注入和用于注入的大氢化硼的形成
US8598022B2 (en) 2009-10-27 2013-12-03 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
TWI583442B (zh) 2011-10-10 2017-05-21 恩特葛瑞斯股份有限公司 Ｂ２ｆ４之製造程序
KR20170004381A (ko) * 2015-07-02 2017-01-11 삼성전자주식회사 불순물 영역을 포함하는 반도체 장치의 제조 방법
JP7093736B2 (ja) * 2019-02-28 2022-06-30 株式会社神鋼環境ソリューション 蓋構造体及び蓋付タンク
JP7506085B2 (ja) * 2019-10-03 2024-06-25 パナソニック インテレクチュアル プロパティ コーポレーション オブ アメリカ 三次元データ符号化方法、三次元データ復号方法、三次元データ符号化装置、及び三次元データ復号装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020085446A1 (en) * 1999-06-25 2002-07-04 Avantium International B.V. Reactor vessel array
CN101214970A (zh) * 2008-01-17 2008-07-09 核工业理化工程研究院华核新技术开发公司 制备高纯三氟化硼气体的工艺方法及设备
CN103201824A (zh) * 2010-08-30 2013-07-10 先进技术材料股份有限公司 由固体材料制备化合物或其中间体以及使用该化合物和中间体的设备和方法

Family Cites Families (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2994652A (en) * 1959-04-06 1961-08-01 Jack W Frazer Method for producing diboron tetrachloride
US3180707A (en) 1961-03-22 1965-04-27 United States Borax Chem Method for preparing diboron tetrafluoride
US3180708A (en) * 1961-03-22 1965-04-27 United States Borax Chem Method for preparing diboron tetrafluoride
JPS588071A (ja) 1981-07-08 1983-01-18 Nippon Iyakuhin Kogyo Kk ２−ベンゾチアゾリノン−３−酢酸アミド誘導体またはその薬学的に活性な塩類の製造法
US4459427A (en) 1981-10-31 1984-07-10 The British Petroleum Company P.L.C. Process for the conversion of an alkane to a mixture of an alcohol and a ketone
JPS60221566A (ja) 1984-04-18 1985-11-06 Agency Of Ind Science & Technol 薄膜形成装置
JPS61186212A (ja) * 1985-02-12 1986-08-19 Seitetsu Kagaku Co Ltd ジシランの製造方法
US4722978A (en) 1985-08-30 1988-02-02 The B. F. Goodrich Company Allyl terminated macromolecular monomers of polyethers
US4680358A (en) 1985-11-08 1987-07-14 The B F Goodrich Company Styryl terminated macromolecular monomers of polyethers
JPS6315228A (ja) 1986-07-08 1988-01-22 Asahi Glass Co Ltd エレクトロクロミツク素子
JPH0772167B2 (ja) 1986-09-04 1995-08-02 サントリー株式会社 ４―アミノ―３―ヒドロキシ酪酸誘導体の製法
US4851255A (en) 1986-12-29 1989-07-25 Air Products And Chemicals, Inc. Ion implant using tetrafluoroborate
JPS6483147A (en) 1987-09-25 1989-03-28 Olympus Optical Co Manufacture of chemical sensitivity field effect transistor
JPH01225117A (ja) 1988-03-04 1989-09-08 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法及びその製造装置
JP2699549B2 (ja) 1988-06-03 1998-01-19 日産化学工業株式会社 ４―ベンゾイル―５―ヒドロキシピラゾール類の製法
JP2533639B2 (ja) 1988-10-07 1996-09-11 株式会社富士電機総合研究所 Ｐ形炭素添加非晶質シリコンの生成方法
US4987933A (en) 1989-03-03 1991-01-29 Eaton Corporation Fluid flow control method and apparatus for minimizing particle contamination
JPH05115786A (ja) 1991-10-31 1993-05-14 Idemitsu Petrochem Co Ltd 三フツ化ホウ素の回収方法
JPH05254808A (ja) 1992-03-10 1993-10-05 Semiconductor Energy Lab Co Ltd 窒化ほう素の作製方法
JPH0680681A (ja) 1992-07-15 1994-03-22 Nippon Kayaku Co Ltd ホスホニウム化合物及びそれを用いた電子写真用トナー
FR2702467B1 (fr) * 1993-03-11 1995-04-28 Air Liquide Procédé de préparation du disilane à partir du monosilane par décharge électrique et piégeage cryogénique et nouveau réacteur pour sa mise en Óoeuvre.
CA2143102A1 (en) 1993-06-23 1995-01-05 Tatsuhiko Suzuki Electrode for batteries, secondary battery using the same and process for producing electrode for batteries
JPH0790201A (ja) 1993-09-22 1995-04-04 Hokko Chem Ind Co Ltd 水中防汚塗料
US5749937A (en) 1995-03-14 1998-05-12 Lockheed Idaho Technologies Company Fast quench reactor and method
US5977552A (en) * 1995-11-24 1999-11-02 Applied Materials, Inc. Boron ion sources for ion implantation apparatus
US5993766A (en) 1996-05-20 1999-11-30 Advanced Technology Materials, Inc. Gas source and dispensing system
GB2317265A (en) 1996-09-13 1998-03-18 Aea Technology Plc Radio frequency plasma generator
JPH10251592A (ja) 1997-03-07 1998-09-22 Kansai Paint Co Ltd 塗料組成物およびその塗装法
US5935283A (en) 1996-12-31 1999-08-10 Atmi Ecosys Corporation Clog-resistant entry structure for introducing a particulate solids-containing and/or solids-forming gas stream to a gas processing system
US6086837A (en) 1997-04-24 2000-07-11 Bechtel Bwxt Idaho, Llc Method of synthesizing enriched decaborane for use in generating boron neutron capture therapy pharmaceuticals
US6096467A (en) 1997-11-19 2000-08-01 Mita Industrial Co., Ltd. Positive charging color toner
US6135128A (en) 1998-03-27 2000-10-24 Eaton Corporation Method for in-process cleaning of an ion source
JP2000135402A (ja) 1998-10-29 2000-05-16 Nippon Petrochem Co Ltd フッ化ストロンチウムを使用した三フッ化ホウ素の除去方法および回収方法
US6310240B1 (en) 1998-12-23 2001-10-30 E. I. Du Pont De Nemours And Company Vapor phase oxidation of acrolein to acrylic acid
US6614082B1 (en) 1999-01-29 2003-09-02 Micron Technology, Inc. Fabrication of semiconductor devices with transition metal boride films as diffusion barriers
US6376664B1 (en) 1999-03-17 2002-04-23 The Ohio State University Cyclic bis-benzimidazole ligands and metal complexes thereof
US6475276B1 (en) 1999-10-15 2002-11-05 Asm Microchemistry Oy Production of elemental thin films using a boron-containing reducing agent
EP2426693A3 (en) 1999-12-13 2013-01-16 Semequip, Inc. Ion source
US6452338B1 (en) 1999-12-13 2002-09-17 Semequip, Inc. Electron beam ion source with integral low-temperature vaporizer
ATE249532T1 (de) * 2000-02-04 2003-09-15 Aixtron Ag Vorrichtung und verfahren zum abscheiden einer oder mehrerer schichten auf ein substrat
US6420304B1 (en) 2000-04-20 2002-07-16 China Petrochemical Development Corporation Polymer-supported carbonylation catalyst and its use
AU2001269905A1 (en) 2000-06-19 2002-01-08 Kimberly-Clark Worldwide, Inc. Novel photoinitiators and applications therefor
KR20000072651A (ko) 2000-08-08 2000-12-05 이관호 식물 신품종 쌈추 및 그 육종방법
US6893907B2 (en) 2002-06-05 2005-05-17 Applied Materials, Inc. Fabrication of silicon-on-insulator structure using plasma immersion ion implantation
US7094670B2 (en) 2000-08-11 2006-08-22 Applied Materials, Inc. Plasma immersion ion implantation process
US20020058385A1 (en) 2000-10-26 2002-05-16 Taiji Noda Semiconductor device and method for manufacturing the same
US6670623B2 (en) 2001-03-07 2003-12-30 Advanced Technology Materials, Inc. Thermal regulation of an ion implantation system
KR100412129B1 (ko) 2001-04-30 2003-12-31 주식회사 하이닉스반도체 반도체소자의 접합 형성방법
AU2002364611A1 (en) 2001-12-31 2003-07-24 The Ohio State University Research Foundation Strapped and modified bis (benzimidazole) diamides for asymmetric catalysts and other applications
GB2387022B (en) 2002-03-28 2005-12-21 Applied Materials Inc Monatomic boron ion source and method
US7138768B2 (en) 2002-05-23 2006-11-21 Varian Semiconductor Equipment Associates, Inc. Indirectly heated cathode ion source
US20040002202A1 (en) 2002-06-26 2004-01-01 Horsky Thomas Neil Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ions
KR100464935B1 (ko) 2002-09-17 2005-01-05 주식회사 하이닉스반도체 불화붕소화합물 도핑에 의한 초박형 에피채널을 갖는반도체소자의 제조 방법
US20040110351A1 (en) 2002-12-05 2004-06-10 International Business Machines Corporation Method and structure for reduction of junction capacitance in a semiconductor device and formation of a uniformly lowered threshold voltage device
AU2003299614A1 (en) 2002-12-12 2004-06-30 Epion Corporation Re-crystallization of semiconductor surface film and doping of semiconductor by energetic cluster irradiation
US6780896B2 (en) 2002-12-20 2004-08-24 Kimberly-Clark Worldwide, Inc. Stabilized photoinitiators and applications thereof
EP1648595B1 (en) 2003-06-06 2016-05-04 Ionwerks Gold implantation/deposition on biological samples for laser desorption three dimensional depth profiling of tissues
US7759254B2 (en) 2003-08-25 2010-07-20 Panasonic Corporation Method for forming impurity-introduced layer, method for cleaning object to be processed apparatus for introducing impurity and method for producing device
JP2005093518A (ja) 2003-09-12 2005-04-07 Matsushita Electric Ind Co Ltd 不純物導入の制御方法および不純物導入装置
TWI375660B (en) 2004-01-22 2012-11-01 Semequip Inc Isotopically-enriched boranes and methods of preparing them
TWI372725B (en) 2004-01-30 2012-09-21 Semequip Inc Methods of synthesis of isotopically enriched borohydride and methods of synthesis of isotopically enriched boranes
US8747805B2 (en) 2004-02-11 2014-06-10 Velocys, Inc. Process for conducting an equilibrium limited chemical reaction using microchannel technology
US7397048B2 (en) 2004-09-17 2008-07-08 Varian Semiconductor Equipment Associates, Inc. Technique for boron implantation
US20060104851A1 (en) 2004-11-12 2006-05-18 Tillotson Brian J Isotopic densification of propellant
US7687025B2 (en) 2004-11-12 2010-03-30 The Boeing Company Isotopic lightening
EP1787321A4 (en) 2004-12-03 2008-12-03 Tel Epion Inc TRAINING OF ULTRASONIC TRANSITIONS THROUGH GASCLUSTER ION RADIATION
WO2006095086A2 (fr) 2005-03-07 2006-09-14 Laurence Faure Traçabilite des anomalies du cycle cellulaire ciblant l'oncologie et la neurodegenerescence.
CN103170447B (zh) 2005-08-30 2015-02-18 先进科技材料公司 使用替代的氟化含硼前驱体的硼离子注入和用于注入的大氢化硼的形成
US20100112795A1 (en) 2005-08-30 2010-05-06 Advanced Technology Materials, Inc. Method of forming ultra-shallow junctions for semiconductor devices
DE102005054218B4 (de) 2005-11-14 2011-06-09 Infineon Technologies Ag Verfahren zum Herstellen eines Halbleiterelements und Halbleiterelement
WO2007071327A1 (de) 2005-12-20 2007-06-28 H.C. Starck Gmbh Metallboride
US20070178679A1 (en) 2006-01-28 2007-08-02 Varian Semiconductor Equipment Associates, Inc. Methods of implanting ions and ion sources used for same
US7473606B2 (en) 2006-02-22 2009-01-06 United Microelectronics Corp. Method for fabricating metal-oxide semiconductor transistors
US20080241805A1 (en) 2006-08-31 2008-10-02 Q-Track Corporation System and method for simulated dosimetry using a real time locating system
US7887634B2 (en) 2006-12-22 2011-02-15 Infineon Technologies Ag Method of producing a semiconductor element and semiconductor element
US7833886B2 (en) 2007-05-14 2010-11-16 Infineon Technologies Ag Method of producing a semiconductor element in a substrate
KR20110025775A (ko) 2008-05-30 2011-03-11 액셀리스 테크놀러지스, 인크. 수소화 붕소 임플란트 시 반도체 웨이퍼 상 입자 제어
US7759657B2 (en) 2008-06-19 2010-07-20 Axcelis Technologies, Inc. Methods for implanting B22Hx and its ionized lower mass byproducts
US20100266087A1 (en) 2009-04-16 2010-10-21 Searete Llc, A Limited Liability Corporation Of The State Of Delaware Nuclear fission reactor, flow control assembly, methods therefor and a flow control assembly system
US8062965B2 (en) 2009-10-27 2011-11-22 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
SG10201605310RA (en) 2009-10-27 2016-08-30 Entegris Inc Ion implantation system and method
TWI583442B (zh) 2011-10-10 2017-05-21 恩特葛瑞斯股份有限公司 Ｂ２ｆ４之製造程序

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020085446A1 (en) * 1999-06-25 2002-07-04 Avantium International B.V. Reactor vessel array
CN101214970A (zh) * 2008-01-17 2008-07-09 核工业理化工程研究院华核新技术开发公司 制备高纯三氟化硼气体的工艺方法及设备
CN103201824A (zh) * 2010-08-30 2013-07-10 先进技术材料股份有限公司 由固体材料制备化合物或其中间体以及使用该化合物和中间体的设备和方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Boron-Fluorine Chemistry.I.Boron Monofluoride and Some Derivatives;P.L.Timms;《Journal of the American Chemical Society》;19670329;第89卷(第7期);1629-1632 *

Also Published As

Publication number Publication date
JP2014528899A (ja) 2014-10-30
CN105905916B (zh) 2019-06-11
KR20140090187A (ko) 2014-07-16
TWI583442B (zh) 2017-05-21
CN105905916A (zh) 2016-08-31
CN104105662A (zh) 2014-10-15
US20190071313A1 (en) 2019-03-07
SG11201401337QA (en) 2014-05-29
US20140301932A1 (en) 2014-10-09
WO2013055688A1 (en) 2013-04-18
TW201330923A (zh) 2013-08-01
SG10201602816XA (en) 2016-05-30
EP2776368A1 (en) 2014-09-17
US9938156B2 (en) 2018-04-10
JP6133877B2 (ja) 2017-05-24
KR102012056B1 (ko) 2019-08-19
EP2776368A4 (en) 2015-07-29

Similar Documents

Publication Publication Date Title
US20190071313A1 (en) B2f4 manufacturing process
KR101902022B1 (ko) 고체 물질로부터 화합물 또는 그의 중간체를 제조하기 위한 장치 및 방법, 및 이러한 화합물과 중간체를 사용하는 방법
US8603252B2 (en) Cleaning of semiconductor processing systems
JP4584549B2 (ja) フッ素ガス生成装置
EP3476803B1 (en) Polycrystalline silicon rod and method for producing same
US12111110B2 (en) Heat exchanger with multistaged cooling
KR101351498B1 (ko) 결정성 조성물, 소자 및 관련 방법
EP1027482A1 (en) Apparatus and method for the in-situ generation of dopants
WO2006043125A1 (en) Fluorine gas generator
US11560316B2 (en) Process and apparatus for removal of impurities from chlorosilanes

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: ENTEGRIS INC.

Free format text: FORMER OWNER: ADVANCED TECHNOLOGY MATERIALS, INC.

Effective date: 20150706

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20150706

Address after: Massachusetts, USA

Applicant after: Entegris Inc.

Address before: American Connecticut

Applicant before: Advanced Technology Materials, Inc.

CB02 Change of applicant information

Address after: Massachusetts, USA

Applicant after: Entergris Co.

Address before: Massachusetts, USA

Applicant before: Entegris Inc.

COR Change of bibliographic data
GR01 Patent grant
GR01 Patent grant