JP2014033181A - 絶縁膜、及び半導体装置の作製方法、並びに半導体装置 - Google Patents
絶縁膜、及び半導体装置の作製方法、並びに半導体装置 Download PDFInfo
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- JP2014033181A JP2014033181A JP2013051667A JP2013051667A JP2014033181A JP 2014033181 A JP2014033181 A JP 2014033181A JP 2013051667 A JP2013051667 A JP 2013051667A JP 2013051667 A JP2013051667 A JP 2013051667A JP 2014033181 A JP2014033181 A JP 2014033181A
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Abstract
【解決手段】酸化物半導体膜を有するトランジスタと、当該トランジスタ上に形成される保護膜とを有する半導体装置において、真空排気された処理室内に載置された基板を180℃以上260℃以下に保持し、処理室に原料ガスを導入して処理室内における圧力を100Pa以上250Pa以下とし、処理室内に設けられる電極に0.17W/cm2以上0.5W/cm2以下の高周波電力を供給する条件により、上記保護膜として化学量論的組成を満たす酸素よりも多くの酸素を含む酸化絶縁膜を形成する。
【選択図】図1
Description
本実施の形態では、本発明の一態様である半導体装置、及び当該半導体装置の作製方法について図面を参照して説明する。
本実施の形態では、実施の形態1及と異なる構造のトランジスタについて、図5を用いて説明する。本実施の形態に示すトランジスタ100は、実施の形態1に示すトランジスタと比較して、トップゲート構造のトランジスタである点が異なる。
本実施の形態では、実施の形態1及び実施の形態2と異なる構造のトランジスタについて、図7を用いて説明する。本実施の形態に示すトランジスタ120は、実施の形態2に示すトランジスタ100と比較して、酸化物半導体膜にドーパントが添加されている点が異なる。
本実施の形態では、実施の形態1乃至実施の形態3と異なる構造のトランジスタについて、図8を用いて説明する。本実施の形態に示すトランジスタ130は、他の実施の形態に示すトランジスタと比較して、酸化物半導体膜の構造が異なり、チャネル領域と、ソース領域及びドレイン領域との間に、電界緩和領域を有する。
本実施の形態では、実施の形態2乃至実施の形態4に適用可能なトランジスタの構造について、図9を用いて説明する。
本実施の形態では、実施の形態2乃至実施の形態5と異なる構造のトランジスタについて、図10を用いて説明する。本実施の形態に示すトランジスタは、実施の形態2乃至実施の形態5と比較して、一対の電極及びゲート電極がゲート絶縁膜を介して重なっている点が異なる。
本実施の形態では、実施の形態1乃至実施の形態6と異なる構造のトランジスタについて、図11を用いて説明する。
本実施の形態では、実施の形態1乃至実施の形態7と異なる構造のトランジスタについて、図12を用いて説明する。本実施の形態に示すトランジスタは、酸化物半導体膜を介して対向する複数のゲート電極を有することを特徴とする。なお、本実施の形態では、実施の形態6に示すトランジスタを用いて説明するが、適宜他の実施の形態と組み合わせることができる。
本実施の形態では、実施の形態1乃至実施の形態8に示すトランジスタにおいて、酸化物半導体膜中に含まれる水素濃度を低減したトランジスタの作製方法について説明する。ここでは、代表的に実施の形態1及び実施の形態2を用いて説明するが、適宜他の実施の形態と組み合わせることができる。なお、本実施の形態に示す工程の一以上と、実施の形態1及び実施の形態2に示すトランジスタの作製工程とが組み合わさればよく、全て組み合わせる必要はない。
本実施の形態では、下部に第1の半導体材料を用いたトランジスタを有し、上部に第2の半導体材料を用いたトランジスタを有する半導体装置であって、第1の半導体材料を用いたトランジスタに半導体基板を用いた構造を、図13を用いて説明する。
先の実施の形態で示した半導体装置の一例としては、中央演算処理装置、マイクロプロセッサ、マイクロコンピュータ、記憶装置、イメージセンサ、電気光学装置、発光表示装置等がある。また、該半導体装置をさまざまな電子機器に適用することができる。電子機器としては、例えば、表示装置、照明装置、パーソナルコンピュータ、ワードプロセッサ、画像再生装置、ポータブルCDプレーヤ、ラジオ、テープレコーダ、ヘッドホンステレオ、ステレオ、時計、コードレス電話子機、トランシーバ、携帯無線機、携帯電話、スマートフォン、電子書籍、自動車電話、携帯型ゲーム機、電卓、携帯情報端末、電子手帳、電子翻訳機、音声入力機器、ビデオカメラ、デジタルスチルカメラ、電気シェーバ、高周波加熱装置、電気炊飯器、電気洗濯機、電気掃除機、温水器、扇風機、毛髪乾燥機、エアコンディショナー、加湿器、除湿器、空調設備、食器洗浄器、食器乾燥器、衣類乾燥器、布団乾燥器、電気冷蔵庫、電気冷凍庫、電気冷凍冷蔵庫、DNA保存用冷凍庫、懐中電灯、工具、煙感知器、医療機器、誘導灯、信号機、ベルトコンベア、エレベータ、エスカレータ、産業用ロボット、電力貯蔵システム、電気自動車、ハイブリッド車、プラグインハイブリッド車、装軌車両、原動機付自転車、自動二輪車、電動車椅子、ゴルフ用カート、船舶、潜水艦、ヘリコプター、航空機、ロケット、人工衛星、宇宙探査機や惑星探査機、宇宙船等がある。本実施の形態では、先の実施の形態で示した半導体装置を、携帯電話、スマートフォン、電子書籍などの携帯機器に応用した場合の例を図14乃至図17を用いて説明する。
Claims (14)
- 真空排気された処理室内に載置された基板を180℃以上260℃以下に保持し、前記処理室に原料ガスを導入して前記処理室内における圧力を100Pa以上250Pa以下とし、前記処理室内に設けられる電極に0.17W/cm2以上0.5W/cm2以下の高周波電力を供給することにより、絶縁膜を形成することを特徴とする絶縁膜の作製方法。
- 請求項1において、前記絶縁膜は酸化シリコン膜または酸化窒化シリコン膜であり、前記原料ガスは、シリコンを含む堆積性気体及び酸化性気体であることを特徴とする絶縁膜の作製方法。
- 請求項1または請求項2において、前記絶縁膜は酸化窒化シリコン膜であり、前記原料ガスは、シラン及び一酸化二窒素であることを特徴とする絶縁膜の作製方法。
- 基板上にゲート電極を形成し、
前記ゲート電極上にゲート絶縁膜を形成し、
前記ゲート絶縁膜上に酸化物半導体膜を形成し、
前記酸化物半導体膜上に一対の電極を形成し、
前記酸化物半導体膜、及び一対の電極上に保護膜を形成し、
真空排気された処理室内に載置された基板を180℃以上260℃以下に保持し、前記処理室に原料ガスを導入して前記処理室内における圧力を100Pa以上250Pa以下とし、前記処理室内に設けられる電極に0.17W/cm2以上0.5W/cm2以下の高周波電力を供給することにより、前記保護膜を形成することを特徴とする半導体装置の作製方法。 - 基板上に絶縁膜を形成し、
前記絶縁膜上に酸化物半導体膜を形成し、
前記酸化物半導体膜上にゲート絶縁膜を形成し、
前記ゲート絶縁膜上にゲート電極を形成し、
前記ゲート絶縁膜及び前記ゲート電極上に保護膜を形成し、
真空排気された処理室内に載置された基板を180℃以上260℃以下に保持し、前記処理室に原料ガスを導入して前記処理室内における圧力を100Pa以上250Pa以下とし、前記処理室内に設けられる電極に0.17W/cm2以上0.5W/cm2以下の高周波電力を供給することにより、前記保護膜を形成することを特徴とする半導体装置の作製方法。 - 基板上に酸化物半導体膜を形成し、
前記酸化物半導体膜上に一対の電極を形成し、
前記酸化物半導体膜、及び前記一対の電極上にゲート絶縁膜を形成し、
前記ゲート絶縁膜上にゲート電極を形成し、
前記ゲート絶縁膜及び前記ゲート電極上に保護膜を形成し、
真空排気された処理室内に載置された基板を180℃以上260℃以下に保持し、前記処理室に原料ガスを導入して前記処理室内における圧力を100Pa以上250Pa以下とし、前記処理室内に設けられる電極に0.17W/cm2以上0.5W/cm2以下の高周波電力を供給することにより、前記保護膜を形成することを特徴とする半導体装置の作製方法。 - 請求項4乃至請求項6のいずれか一項において、前記保護膜は酸化シリコン膜または酸化窒化シリコン膜であり、前記原料ガスは、シリコンを含む堆積性気体及び酸化性気体であることを特徴とする半導体装置の作製方法。
- 請求項7において、前記保護膜は酸化窒化シリコン膜であり、前記原料ガスは、シラン及び一酸化二窒素であることを特徴とする半導体装置の作製方法。
- 請求項4乃至請求項8のいずれか一項において、前記保護膜を形成した後、前記保護膜の成膜温度より高い温度で加熱処理を行うことを特徴とする半導体装置の作製方法。
- 請求項9において、前記加熱処理の温度は、250℃以上基板歪み点未満であることを特徴とする半導体装置の作製方法。
- ゲート電極と、
前記ゲート電極の一部とゲート絶縁膜を介して重なる酸化物半導体膜と、
前記酸化物半導体膜に接する一対の電極と、
前記酸化物半導体膜上に設けられる保護膜と、
を有し、
前記保護膜は、電子スピン共鳴測定によるg=2.001に現れる信号のスピン密度が1.5×1018spins/cm3未満である酸化絶縁膜であることを特徴とする半導体装置。 - 請求項11において、前記一対の電極は、前記ゲート絶縁膜及び前記酸化物半導体膜の間に設けられることを特徴とする半導体装置。
- 請求項11において、前記一対の電極は、前記酸化物半導体膜及び前記保護膜の間に設けられることを特徴とする半導体装置。
- 酸化物半導体膜と、
前記酸化物半導体膜に接する一対の電極と、
前記酸化物半導体膜上に設けられるゲート絶縁膜と、
前記酸化物半導体膜の一部と前記ゲート絶縁膜を介して重なるゲート電極と、
前記ゲート絶縁膜及び前記ゲート電極を覆う保護膜と、
を有し、
前記保護膜は、電子スピン共鳴測定によるg=2.001に現れる信号のスピン密度が1.5×1018spins/cm3未満である酸化絶縁膜であることを特徴とする半導体装置。
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