JP2013532225A - シリコン／ゲルマニウム・ナノ粒子インク、ナノ粒子を合成するためのレーザー熱分解反応器、及び関連の方法 - Google Patents

シリコン／ゲルマニウム・ナノ粒子インク、ナノ粒子を合成するためのレーザー熱分解反応器、及び関連の方法 Download PDF

Info

Publication number
JP2013532225A
JP2013532225A JP2013518566A JP2013518566A JP2013532225A JP 2013532225 A JP2013532225 A JP 2013532225A JP 2013518566 A JP2013518566 A JP 2013518566A JP 2013518566 A JP2013518566 A JP 2013518566A JP 2013532225 A JP2013532225 A JP 2013532225A
Authority
JP
Japan
Prior art keywords
silicon
reactant
dispersion
particles
ink
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2013518566A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013532225A5 (https=
Inventor
チルボル シブクマー
アルトマン イゴール
エム．フレイ バーナード
ウェイドン リ
クォチュン リュー
ビー．リンチ ロバート
エリザベス ペングラ−レウン ジーナ
スリニバサン ウマ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanogram Corp
Original Assignee
Nanogram Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanogram Corp filed Critical Nanogram Corp
Publication of JP2013532225A publication Critical patent/JP2013532225A/ja
Publication of JP2013532225A5 publication Critical patent/JP2013532225A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J13/00—Colloid chemistry, e.g. the production of colloidal materials or their solutions, not otherwise provided for; Making microcapsules or microballoons
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/30—Inkjet printing inks
    • C09D11/38—Inkjet printing inks characterised by non-macromolecular additives other than solvents, pigments or dyes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D21/00—Separation of suspended solid particles from liquids by sedimentation
    • B01D21/26—Separation of sediment aided by centrifugal force or centripetal force
    • B01D21/262—Separation of sediment aided by centrifugal force or centripetal force by using a centrifuge
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
    • B01J19/121—Coherent waves, e.g. laser beams
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G17/00—Compounds of germanium
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/02—Printing inks
    • C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/02—Printing inks
    • C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
    • C09D11/033—Printing inks characterised by features other than the chemical nature of the binder characterised by the solvent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/02—Printing inks
    • C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
    • C09D11/037—Printing inks characterised by features other than the chemical nature of the binder characterised by the pigment
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/02—Printing inks
    • C09D11/10—Printing inks based on artificial resins
    • C09D11/101—Inks specially adapted for printing processes involving curing by wave energy or particle radiation, e.g. with UV-curing following the printing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/30—Inkjet printing inks
    • C09D11/32—Inkjet printing inks characterised by colouring agents
    • C09D11/322—Pigment inks
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/30—Inkjet printing inks
    • C09D11/36—Inkjet printing inks based on non-aqueous solvents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/52—Electrically conductive inks
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/24—Electrically-conducting paints
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40—Additives
    • C09D7/66—Additives characterised by particle size
    • C09D7/67—Particle size smaller than 100 nm
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40—Additives
    • C09D7/66—Additives characterised by particle size
    • C09D7/68—Particle size between 100-1000 nm
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/80—Processes for incorporating ingredients
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H10F77/1662—Amorphous semiconductors including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3446—Transition metal elements; Rare earth elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3461—Nanoparticles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0869—Feeding or evacuating the reactor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0871—Heating or cooling of the reactor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0873—Materials to be treated
    • B01J2219/0875—Gas
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/08—Metals
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/34—Silicon-containing compounds
    • C08K3/36—Silica
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K9/00—Use of pretreated ingredients
    • C08K9/02—Ingredients treated with inorganic substances
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4462—Carbon or carbon-containing materials, e.g. graphene
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Toxicology (AREA)
  • General Health & Medical Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Composite Materials (AREA)
  • Optics & Photonics (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Pigments, Carbon Blacks, Or Wood Stains (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Ink Jet (AREA)
  • Ink Jet Recording Methods And Recording Media Thereof (AREA)
  • Sustainable Energy (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
JP2013518566A 2010-06-29 2011-06-28 シリコン／ゲルマニウム・ナノ粒子インク、ナノ粒子を合成するためのレーザー熱分解反応器、及び関連の方法 Pending JP2013532225A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US35966210P 2010-06-29 2010-06-29
US61/359,662 2010-06-29
US13/070,286 2011-03-23
US13/070,286 US8895962B2 (en) 2010-06-29 2011-03-23 Silicon/germanium nanoparticle inks, laser pyrolysis reactors for the synthesis of nanoparticles and associated methods
PCT/US2011/042142 WO2012006071A2 (en) 2010-06-29 2011-06-28 Silicon/germanium nanoparticle inks, laser pyrolysis reactors for the synthesis of nanoparticles and associated methods

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2016074668A Division JP2016138284A (ja) 2010-06-29 2016-04-01 シリコン／ゲルマニウム・ナノ粒子インク、ナノ粒子を合成するためのレーザー熱分解反応器、及び関連の方法
JP2016074667A Division JP6257682B2 (ja) 2010-06-29 2016-04-01 シリコン／ゲルマニウム・ナノ粒子インク、ナノ粒子を合成するためのレーザー熱分解反応器、及び関連の方法

Publications (2)

Publication Number Publication Date
JP2013532225A true JP2013532225A (ja) 2013-08-15
JP2013532225A5 JP2013532225A5 (https=) 2015-06-25

Family

ID=45352936

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2013518566A Pending JP2013532225A (ja) 2010-06-29 2011-06-28 シリコン／ゲルマニウム・ナノ粒子インク、ナノ粒子を合成するためのレーザー熱分解反応器、及び関連の方法
JP2016074667A Active JP6257682B2 (ja) 2010-06-29 2016-04-01 シリコン／ゲルマニウム・ナノ粒子インク、ナノ粒子を合成するためのレーザー熱分解反応器、及び関連の方法
JP2016074668A Pending JP2016138284A (ja) 2010-06-29 2016-04-01 シリコン／ゲルマニウム・ナノ粒子インク、ナノ粒子を合成するためのレーザー熱分解反応器、及び関連の方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2016074667A Active JP6257682B2 (ja) 2010-06-29 2016-04-01 シリコン／ゲルマニウム・ナノ粒子インク、ナノ粒子を合成するためのレーザー熱分解反応器、及び関連の方法
JP2016074668A Pending JP2016138284A (ja) 2010-06-29 2016-04-01 シリコン／ゲルマニウム・ナノ粒子インク、ナノ粒子を合成するためのレーザー熱分解反応器、及び関連の方法

Country Status (10)

Country Link
US (3) US8895962B2 (https=)
EP (2) EP3097975A1 (https=)
JP (3) JP2013532225A (https=)
KR (1) KR20130127968A (https=)
CN (3) CN107418295A (https=)
MY (1) MY162622A (https=)
PH (1) PH12012502527A1 (https=)
SG (1) SG186489A1 (https=)
TW (1) TWI534210B (https=)
WO (1) WO2012006071A2 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016506441A (ja) * 2012-12-20 2016-03-03 ナノグラム・コーポレイションＮａｎｏＧｒａｍ Ｃｏｒｐｏｒａｔｉｏｎ 超低濃度金属汚染物質を有するシリコン／ゲルマニウム系ナノ粒子ペースト
JP2016138284A (ja) * 2010-06-29 2016-08-04 ナノグラム・コーポレイションＮａｎｏＧｒａｍ Ｃｏｒｐｏｒａｔｉｏｎ シリコン／ゲルマニウム・ナノ粒子インク、ナノ粒子を合成するためのレーザー熱分解反応器、及び関連の方法
JP2019502808A (ja) * 2015-11-03 2019-01-31 カネカ アメリカズ ホールディング，インコーポレイティド 誘電率の調整によるナノ粒子の分散安定性の制御及び界面活性剤フリーナノ粒子の固有誘電率の決定

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7892872B2 (en) * 2007-01-03 2011-02-22 Nanogram Corporation Silicon/germanium oxide particle inks, inkjet printing and processes for doping semiconductor substrates
US9173967B1 (en) 2007-05-11 2015-11-03 SDCmaterials, Inc. System for and method of processing soft tissue and skin with fluids using temperature and pressure changes
US8507401B1 (en) 2007-10-15 2013-08-13 SDCmaterials, Inc. Method and system for forming plug and play metal catalysts
US9320145B2 (en) 2010-09-13 2016-04-19 Pst Sensors (Proprietary) Limited Assembling and packaging a discrete electronic component
JP5806316B2 (ja) * 2010-09-13 2015-11-10 ピーエスティ・センサーズ・（プロプライエタリー）・リミテッドＰｓｔ Ｓｅｎｓｏｒｓ （Ｐｒｏｐｒｉｅｔａｒｙ） Ｌｉｍｉｔｅｄ 印刷された温度センサ
US8912083B2 (en) 2011-01-31 2014-12-16 Nanogram Corporation Silicon substrates with doped surface contacts formed from doped silicon inks and corresponding processes
DE102011084644A1 (de) * 2011-10-17 2013-04-18 Osram Gmbh Verfahren zur herstellung eines photovoltaischen elements mit einer siliziumdioxidschicht
US20130189831A1 (en) * 2012-01-19 2013-07-25 Weidong Li Silicon/germanium nanoparticle inks and methods of forming inks with desired printing properties
JP5920242B2 (ja) * 2012-06-02 2016-05-18 東京エレクトロン株式会社 成膜方法及び成膜装置
WO2014028280A2 (en) * 2012-08-16 2014-02-20 Nthdegree Technologies Worldwide Inc. Conductive, metallic and semiconductor ink compositions
TWI509866B (zh) * 2013-01-24 2015-11-21 Univ Nat Taiwan Science Tech 表面改質之粉末
CA2903449A1 (en) * 2013-03-14 2014-10-02 SDCmaterials, Inc. High-throughput particle production using a plasma system
US9475695B2 (en) 2013-05-24 2016-10-25 Nanogram Corporation Printable inks with silicon/germanium based nanoparticles with high viscosity alcohol solvents
CN106061600A (zh) 2013-10-22 2016-10-26 Sdc材料公司 用于重型柴油机的催化剂设计
US11414759B2 (en) 2013-11-29 2022-08-16 Taiwan Semiconductor Manufacturing Co., Ltd Mechanisms for supplying process gas into wafer process apparatus
JP5846335B1 (ja) * 2014-03-26 2016-01-20 東レ株式会社 半導体装置の製造方法及び半導体装置
JP2017511571A (ja) * 2014-04-02 2017-04-20 ザ ボード オブ トラスティーズ オブ ザ レランド スタンフォード ジュニア ユニバーシティー 質量分析法によるサブミクロン元素画像解析の装置及び方法
KR101547648B1 (ko) 2015-02-27 2015-08-28 주식회사 쇼나노 레이저를 이용한 나노입자 제조장치
DE102015006727A1 (de) * 2015-05-30 2016-12-01 Rainer Pommersheim Verfahren und technischer Prozess zur Herstellung von Mikro- und Nanopartikeln unterschiedlicher Größe
JP6766054B2 (ja) * 2015-09-24 2020-10-07 東洋アルミニウム株式会社 ペースト組成物及びシリコンゲルマニウム層の形成方法
WO2018004092A1 (ko) * 2016-06-29 2018-01-04 한양대학교에리카산학협력단 나노 구조체 네트워크 및 그 제조 방법
EP3287213A1 (en) 2016-08-23 2018-02-28 Paul Scherrer Institut Aqueous additive production method for the fabrication of ceramic and/or metallic bodies
US10745804B2 (en) * 2017-01-31 2020-08-18 Ofs Fitel, Llc Parallel slit torch for making optical fiber preform
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US11276559B2 (en) * 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
CN107706092B (zh) * 2017-10-13 2021-01-26 京东方科技集团股份有限公司 一种准分子激光退火设备
US11320738B2 (en) 2018-06-27 2022-05-03 Taiwan Semiconductor Manufacturing Co., Ltd. Pattern formation method and material for manufacturing semiconductor devices
KR102299019B1 (ko) * 2018-07-23 2021-09-08 주식회사 엘지화학 나노입자 합성 장치 및 이를 이용한 나노입자의 합성 방법
KR102181378B1 (ko) * 2018-10-11 2020-11-20 한양대학교 산학협력단 다공성 규소-저마늄 전극 소재의 제조방법 및 이를 이용한 이차전지
US11404270B2 (en) 2018-11-30 2022-08-02 Texas Instruments Incorporated Microelectronic device substrate formed by additive process
US10861715B2 (en) 2018-12-28 2020-12-08 Texas Instruments Incorporated 3D printed semiconductor package
US10910465B2 (en) 2018-12-28 2021-02-02 Texas Instruments Incorporated 3D printed semiconductor package
CN113130791A (zh) * 2019-12-31 2021-07-16 Tcl集团股份有限公司 复合材料及其制备方法、发光二极管和制备方法
WO2021199644A1 (ja) * 2020-04-02 2021-10-07 株式会社ボスケシリコン 複合材
CN112226229B (zh) * 2020-10-30 2023-01-17 宁波革鑫新能源科技有限公司 掺杂复合结构硅量子点及其制备方法和应用
CN113426995B (zh) * 2021-06-07 2023-07-04 西湖大学 一种可燃烧的3d直写墨水及其制备方法和应用
KR102458236B1 (ko) * 2021-08-25 2022-10-25 한국전자통신연구원 테라헤르츠 소자의 제조 방법
CN114112925B (zh) * 2021-12-24 2024-07-12 岭南师范学院 一种液体痕量检测装置及方法

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05200278A (ja) * 1991-12-27 1993-08-10 Victor Co Of Japan Ltd 超微粒子製造装置
JPH07126005A (ja) * 1993-10-28 1995-05-16 Nippon Oil Co Ltd シリコンコロイドの製造方法
JP2004087546A (ja) * 2002-08-23 2004-03-18 Jsr Corp シリコン膜形成用組成物およびシリコン膜の形成方法
JP2006070089A (ja) * 2004-08-31 2006-03-16 Tokyo Denki Univ 環境保全性ナノシリコン溶液及びナノシリコンパウダーとそれらの製造方法
JP2008508166A (ja) * 2004-06-18 2008-03-21 リージェンツ・オブ・ザ・ユニヴァーシティー・オブ・ミネソタ 高周波プラズマを用いてナノ粒子を生成するための方法および装置
WO2009011194A1 (ja) * 2007-07-18 2009-01-22 Konica Minolta Medical & Graphic, Inc. 半導体ナノ粒子蛍光体の集合体、その製造方法、及びそれを用いた単一分子観察方法
WO2009032359A2 (en) * 2007-09-04 2009-03-12 Innovalight, Inc. Group iv nanoparticle junctions and devices therefrom
JP2009246213A (ja) * 2008-03-31 2009-10-22 Dainippon Printing Co Ltd 半導体基材の製造方法
JP2010013313A (ja) * 2008-07-03 2010-01-21 Konica Minolta Medical & Graphic Inc 半導体ナノ粒子含有膜及び半導体ナノ粒子
JP2010514585A (ja) * 2007-01-03 2010-05-06 ナノグラム・コーポレイション シリコン／ゲルマニウムによるナノ粒子インク、ドーピングされた粒子、印刷法、及び半導体用途のためのプロセス
JP2013505597A (ja) * 2009-09-21 2013-02-14 ナノグラム・コーポレイション 薄膜太陽電池形成のためのシリコンインク、対応の方法及び太陽電池構造

Family Cites Families (166)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4810612Y1 (https=) 1967-07-13 1973-03-20
US3645939A (en) 1968-02-01 1972-02-29 Us Plywood Champ Papers Inc Compatibilization of hydroxyl containing materials and thermoplastic polymers
JPS4926700B1 (https=) 1970-08-21 1974-07-11
DE2917727A1 (de) 1979-05-02 1980-11-13 Wacker Chemie Gmbh Zu elastomeren vernetzbare massen
DE2927086C2 (de) 1979-07-04 1987-02-05 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von platten- oder bandförmigen Siliziumkristallkörpern mit Säulenstruktur für Solarzellen
US4478963A (en) 1980-08-08 1984-10-23 The B. F. Goodrich Company Filler particles coated with reactive liquid polymers in a matrix resin
DE3035563C2 (de) 1980-09-20 1984-10-11 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen einer polykristallinen Silizium-Solarzelle
US4425384A (en) 1981-04-27 1984-01-10 Shell Oil Company Polymer-reinforcing compositions and their preparation
JPS6167836U (https=) * 1984-10-08 1986-05-09
US4595749A (en) 1984-11-23 1986-06-17 Shell Oil Company Direct removal of NI catalysts
KR880000618B1 (ko) 1985-12-28 1988-04-18 재단법인 한국화학연구소 초단파 가열 유동상 반응에 의한 고순도 다결정 실리콘의 제조 방법
JPH0691162B2 (ja) 1986-03-14 1994-11-14 イビデン株式会社 電子部品封止用キヤツプとその製造方法
US4947219A (en) 1987-01-06 1990-08-07 Chronar Corp. Particulate semiconductor devices and methods
JP2509542B2 (ja) 1987-02-26 1996-06-19 株式会社ワイエムシィ 溶質分離用担体
JPH0454976Y2 (https=) 1987-08-06 1992-12-24
KR900007765B1 (ko) 1987-11-25 1990-10-19 고려화학 주식회사 고무가 피복된 저용력화제 제조방법 및 이를 함유한 조성물
US5132248A (en) 1988-05-31 1992-07-21 The United States Of America As Represented By The United States Department Of Energy Direct write with microelectronic circuit fabrication
JP2718231B2 (ja) 1990-01-10 1998-02-25 三菱電機株式会社 高純度末端ヒドロキシフェニルラダーシロキサンプレポリマーの製造方法および高純度末端ヒドロキシフェニルラダーポリシロキサンの製造方法
JPH0395269U (https=) 1990-01-17 1991-09-27
DK0520032T3 (da) 1990-03-16 1999-06-14 Beth Israel Hospital Anvendelse af spiperon som immunundertrykkende og antiinflammatorisk middel
GB2242443B (en) 1990-03-28 1994-04-06 Nisshin Flour Milling Co Coated particles of inorganic or metallic materials and processes of producing the same
US5262357A (en) 1991-11-22 1993-11-16 The Regents Of The University Of California Low temperature thin films formed from nanocrystal precursors
JP3179821B2 (ja) 1991-11-25 2001-06-25 日清製粉株式会社 超微粒子で表面が被覆された粒子の製造方法および装置
US5372749A (en) 1992-02-19 1994-12-13 Beijing Technology Of Printing Research Institute Chinese Method for surface treating conductive copper powder with a treating agent and coupler
JP3099501B2 (ja) 1992-03-10 2000-10-16 日本板硝子株式会社 超微粒子分散材料の製造方法
JP3358203B2 (ja) 1992-03-19 2002-12-16 日本板硝子株式会社 半導体超微粒子の製造方法
CN1021889C (zh) * 1992-04-20 1993-08-25 北京化工学院 制链球状金属粉体的激光气相法及其设备
GB2271518B (en) 1992-10-16 1996-09-25 Korea Res Inst Chem Tech Heating of fluidized bed reactor by microwave
US5429708A (en) 1993-12-22 1995-07-04 The Board Of Trustees Of The Leland Stanford Junior University Molecular layers covalently bonded to silicon surfaces
US5491114A (en) 1994-03-24 1996-02-13 Starfire Electronic Development & Marketing, Ltd. Method of making large-area semiconductor thin films formed at low temperature using nanocrystal presursors
US5576248A (en) 1994-03-24 1996-11-19 Starfire Electronic Development & Marketing, Ltd. Group IV semiconductor thin films formed at low temperature using nanocrystal precursors
US5559057A (en) 1994-03-24 1996-09-24 Starfire Electgronic Development & Marketing Ltd. Method for depositing and patterning thin films formed by fusing nanocrystalline precursors
US5763513A (en) 1994-05-19 1998-06-09 Mitsui Toatsu Chemicals, Inc. L-lactic acid polymer composition, molded product and film
AU3495595A (en) * 1994-08-25 1996-03-22 Qqc, Inc. Nanoscale particles, and uses for same
US5565188A (en) * 1995-02-24 1996-10-15 Nanosystems L.L.C. Polyalkylene block copolymers as surface modifiers for nanoparticles
JP3251869B2 (ja) 1995-11-01 2002-01-28 株式会社日本触媒 反応性カーボンブラックグラフトポリマー、その製造方法および用途
US5695617A (en) 1995-11-22 1997-12-09 Dow Corning Corporation Silicon nanoparticles
US5866471A (en) 1995-12-26 1999-02-02 Kabushiki Kaisha Toshiba Method of forming semiconductor thin film and method of fabricating solar cell
JP4346684B2 (ja) 1996-04-17 2009-10-21 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 基板上への焼結体の製造方法
TW449670B (en) 1996-05-15 2001-08-11 Seiko Epson Corp Method for making thin film device with coating film, liquid crystal panel and electronic device
JP3472041B2 (ja) 1996-07-29 2003-12-02 シャープ株式会社 シリコン系微粒子の製造方法及びその方法により製造されたシリコン系微粒子を用いた薄膜形成方法
US5801108A (en) 1996-09-11 1998-09-01 Motorola Inc. Low temperature cofireable dielectric paste
DE19652818A1 (de) 1996-12-18 1998-07-02 Priesemuth W Verfahren zum Herstellen einer Solarzelle sowie Solarzelle
US5958348A (en) * 1997-02-28 1999-09-28 Nanogram Corporation Efficient production of particles by chemical reaction
US5850064A (en) 1997-04-11 1998-12-15 Starfire Electronics Development & Marketing, Ltd. Method for photolytic liquid phase synthesis of silicon and germanium nanocrystalline materials
US20010051118A1 (en) 1999-07-21 2001-12-13 Ronald J. Mosso Particle production apparatus
US6193936B1 (en) * 1998-11-09 2001-02-27 Nanogram Corporation Reactant delivery apparatuses
US6849334B2 (en) * 2001-08-17 2005-02-01 Neophotonics Corporation Optical materials and optical devices
US7575784B1 (en) 2000-10-17 2009-08-18 Nanogram Corporation Coating formation by reactive deposition
US7226966B2 (en) 2001-08-03 2007-06-05 Nanogram Corporation Structures incorporating polymer-inorganic particle blends
US6599631B2 (en) 2001-01-26 2003-07-29 Nanogram Corporation Polymer-inorganic particle composites
US6290735B1 (en) * 1997-10-31 2001-09-18 Nanogram Corporation Abrasive particles for surface polishing
US20090075083A1 (en) 1997-07-21 2009-03-19 Nanogram Corporation Nanoparticle production and corresponding structures
US7384680B2 (en) 1997-07-21 2008-06-10 Nanogram Corporation Nanoparticle-based power coatings and corresponding structures
DE19735378A1 (de) 1997-08-14 1999-02-18 Wacker Chemie Gmbh Verfahren zur Herstellung von hochreinem Siliciumgranulat
US6005707A (en) 1997-11-21 1999-12-21 Lucent Technologies Inc. Optical devices comprising polymer-dispersed crystalline materials
US5990479A (en) 1997-11-25 1999-11-23 Regents Of The University Of California Organo Luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes
JPH11171947A (ja) 1997-12-12 1999-06-29 Asahi Chem Ind Co Ltd 多孔性無機有機複合体
JPH11260721A (ja) 1998-03-13 1999-09-24 Toshiba Corp 多結晶薄膜シリコン層の形成方法および太陽光発電素子
US6761816B1 (en) 1998-06-23 2004-07-13 Clinical Micro Systems, Inc. Printed circuit boards with monolayers and capture ligands
US6270732B1 (en) 1998-06-30 2001-08-07 Nanogram Corporation Particle collection apparatus and associated methods
JP2000026692A (ja) 1998-07-08 2000-01-25 Ube Nitto Kasei Co Ltd 熱硬化性樹脂被覆粒子、その製造方法および該粒子からなるスペーサー
JP3056467B2 (ja) 1998-09-08 2000-06-26 有限会社デジタル・ウェーブ 半導体装置製造用基板、その製造方法、及び、光電変換装置、その製造方法
JP2003524136A (ja) 1998-10-02 2003-08-12 エスアールアイ インターナショナル 中央に配置された内部熱源を有する流動層リアクタ
EP1146968B1 (en) 1998-12-08 2005-02-02 Gene Logic, Inc. Process for attaching organic molecules to silicon
JP4004675B2 (ja) 1999-01-29 2007-11-07 株式会社日清製粉グループ本社 酸化物被覆金属微粒子の製造方法
US6348295B1 (en) 1999-03-26 2002-02-19 Massachusetts Institute Of Technology Methods for manufacturing electronic and electromechanical elements and devices by thin-film deposition and imaging
DE19914093A1 (de) 1999-03-27 2000-10-19 Dornier Gmbh Elektrochromes Element
JP3681569B2 (ja) 1999-03-30 2005-08-10 松下電器産業株式会社 超微粒子生成堆積装置
JP2000279817A (ja) 1999-03-31 2000-10-10 Japan Chemical Innovation Institute 刺激応答性高分子を用いた金属含有高分散型触媒とその製造方法
US7038655B2 (en) 1999-05-03 2006-05-02 E Ink Corporation Electrophoretic ink composed of particles with field dependent mobilities
JP4214203B2 (ja) 1999-05-18 2009-01-28 オリヱント化学工業株式会社 有機−無機複合材料およびその製造方法
KR100302326B1 (ko) 1999-06-09 2001-09-22 윤덕용 폴리비닐알콜-실란커플링제를 이용한 무-유기 공중합체 및 그의제조방법
US6974367B1 (en) * 1999-09-02 2005-12-13 Micron Technology, Inc. Chemical mechanical polishing process
DE19948395A1 (de) 1999-10-06 2001-05-03 Wacker Chemie Gmbh Strahlungsbeheizter Fliessbettreaktor
US6743406B2 (en) 1999-10-22 2004-06-01 The Board Of Trustees Of The University Of Illinois Family of discretely sized silicon nanoparticles and method for producing the same
US6585947B1 (en) 1999-10-22 2003-07-01 The Board Of Trustess Of The University Of Illinois Method for producing silicon nanoparticles
JP2001237140A (ja) 1999-12-13 2001-08-31 Murata Mfg Co Ltd 積層型セラミック電子部品およびその製造方法ならびにセラミックペーストおよびその製造方法
GB9929614D0 (en) 1999-12-15 2000-02-09 Koninkl Philips Electronics Nv Method of manufacturing a transistor
US6287925B1 (en) 2000-02-24 2001-09-11 Advanced Micro Devices, Inc. Formation of highly conductive junctions by rapid thermal anneal and laser thermal process
US6723606B2 (en) 2000-06-29 2004-04-20 California Institute Of Technology Aerosol process for fabricating discontinuous floating gate microelectronic devices
US6552405B2 (en) 2000-07-27 2003-04-22 Kyocera Corporation Photoelectric conversion device and manufacturing method thereof
US6752979B1 (en) 2000-11-21 2004-06-22 Very Small Particle Company Pty Ltd Production of metal oxide particles with nano-sized grains
CN1180912C (zh) * 2000-12-22 2004-12-22 中国科学院金属研究所 激光气相制备纳米银粒子方法和装置
JP2002270546A (ja) 2001-03-07 2002-09-20 Hitachi Chem Co Ltd 導体用研磨液及びこれを用いた研磨方法
US20020160194A1 (en) * 2001-04-27 2002-10-31 Flex Products, Inc. Multi-layered magnetic pigments and foils
US6846565B2 (en) 2001-07-02 2005-01-25 Board Of Regents, The University Of Texas System Light-emitting nanoparticles and method of making same
US6918946B2 (en) 2001-07-02 2005-07-19 Board Of Regents, The University Of Texas System Applications of light-emitting nanoparticles
US6794265B2 (en) 2001-08-02 2004-09-21 Ultradots, Inc. Methods of forming quantum dots of Group IV semiconductor materials
EP1284306B1 (en) 2001-08-14 2011-08-03 JSR Corporation Silane composition, silicon film forming method and solar cell production method
JP4224961B2 (ja) 2001-09-17 2009-02-18 ブラザー工業株式会社 インクジェット記録用水性インク及びカラーインクセット
JP2003096338A (ja) 2001-09-19 2003-04-03 Konica Corp インクジェット用顔料インクとそれを用いたインクジェットカートリッジ、インクジェット画像記録方法及びインクジェット記録画像
US7267721B2 (en) 2001-09-19 2007-09-11 Evergreen Solar, Inc. Method for preparing group IV nanocrystals with chemically accessible surfaces
US6821329B2 (en) 2001-10-31 2004-11-23 Hewlett-Packard Development Company, L.P. Ink compositions and methods of ink-jet printing on hydrophobic media
US20030091647A1 (en) * 2001-11-15 2003-05-15 Lewis Jennifer A. Controlled dispersion of colloidal suspensions via nanoparticle additions
US6770502B2 (en) 2002-04-04 2004-08-03 Eastman Kodak Company Method of manufacturing a top-emitting OLED display device with desiccant structures
WO2003092077A2 (en) 2002-04-24 2003-11-06 E Ink Corporation Electronic displays
DE10219121A1 (de) 2002-04-29 2003-11-27 Infineon Technologies Ag Siliziumpartikel als Additive zur Verbesserung der Ladungsträgermobilität in organischen Halbleitern
US6727645B2 (en) 2002-05-24 2004-04-27 International Business Machines Corporation Organic LED device
US6878184B1 (en) 2002-08-09 2005-04-12 Kovio, Inc. Nanoparticle synthesis and the formation of inks therefrom
US6911385B1 (en) 2002-08-22 2005-06-28 Kovio, Inc. Interface layer for the fabrication of electronic devices
CN100423197C (zh) 2002-08-23 2008-10-01 Jsr株式会社 硅膜形成用组合物和硅膜的形成方法
GB0225202D0 (en) 2002-10-30 2002-12-11 Hewlett Packard Co Electronic components
US7914617B2 (en) 2002-11-27 2011-03-29 Tapesh Yadav Nano-engineered inks, methods for their manufacture and their applications
US7078276B1 (en) 2003-01-08 2006-07-18 Kovio, Inc. Nanoparticles and method for making the same
WO2005013337A2 (en) 2003-03-06 2005-02-10 Rensselaer Polytechnic Institute Rapid generation of nanoparticles from bulk solids at room temperature
KR100827861B1 (ko) * 2003-05-22 2008-05-07 지벡스 퍼포먼스 머티리얼즈, 엘엘씨 나노복합물 및 이의 제조 방법
US7045851B2 (en) 2003-06-20 2006-05-16 International Business Machines Corporation Nonvolatile memory device using semiconductor nanocrystals and method of forming same
US7879696B2 (en) 2003-07-08 2011-02-01 Kovio, Inc. Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom
JP2005093307A (ja) 2003-09-19 2005-04-07 Konica Minolta Medical & Graphic Inc 光電変換素子
US6998288B1 (en) 2003-10-03 2006-02-14 Sunpower Corporation Use of doped silicon dioxide in the fabrication of solar cells
DE10353995A1 (de) 2003-11-19 2005-06-09 Degussa Ag Nanoskaliges, kristallines Siliciumpulver
JP2005157661A (ja) 2003-11-25 2005-06-16 Brother Ind Ltd 無線タグ作成装置及びカートリッジ
JP4449731B2 (ja) 2003-12-19 2010-04-14 東洋インキ製造株式会社 処理金属酸化物半導体ペースト、そのペーストを用いた金属酸化物半導体電極の製造方法、およびセルの製造方法
JP3826145B2 (ja) 2004-07-16 2006-09-27 株式会社クラレ 集光フィルム、液晶パネルおよびバックライト並びに集光フィルムの製造方法
JP2005328030A (ja) 2005-02-09 2005-11-24 Mitsubishi Chemicals Corp 半導体デバイス作製用インク、及びそれを用いた半導体デバイスの作製方法
JP5082203B2 (ja) 2005-05-18 2012-11-28 コニカミノルタホールディングス株式会社 水性インク、水性インクの製造方法、インクジェットプリンタ及びインクジェット記録方法
US20070003694A1 (en) 2005-05-23 2007-01-04 Shivkumar Chiruvolu In-flight modification of inorganic particles within a reaction product flow
WO2006137295A1 (ja) 2005-06-23 2006-12-28 Sharp Kabushiki Kaisha 表示装置およびその駆動方法
JP2009504423A (ja) 2005-08-11 2009-02-05 イノヴァライト インコーポレイテッド 安定にパッシベートされたｉｖ族半導体ナノ粒子、並びにその製造方法及びその組成物
CN101248222B (zh) 2005-08-23 2015-05-13 Pst传感器(私人)有限公司 粒子半导体材料的掺杂
FR2894493B1 (fr) * 2005-12-08 2008-01-18 Commissariat Energie Atomique Systeme et procede de production de poudres nanometriques ou sub-micrometriques en flux continu sous l'action d'une pyrolyse laser
EP1971651B1 (en) 2005-12-22 2016-10-05 PST Sensors (Pty) Limited Thick film semiconducting inks
EP1981074B1 (en) * 2006-02-02 2011-06-22 JSR Corporation Organic silica film and method for forming same, composition for forming insulating film of semiconductor device and method for producing same, wiring structure and semiconductor device
WO2007106502A2 (en) 2006-03-13 2007-09-20 Nanogram Corporation Thin silicon or germanium sheets and photovoltaics formed from thin sheets
KR101275814B1 (ko) * 2006-06-23 2013-06-18 삼성에스디아이 주식회사 분산제 화합물 및 그의 제조방법
JP2008021267A (ja) 2006-07-14 2008-01-31 Fuji Xerox Co Ltd 文献検索システム、文献検索処理方法及び文献検索処理プログラム
US20080063855A1 (en) 2006-09-07 2008-03-13 Maxim Kelman Semiconductor thin films formed from group iv nanoparticles
US20080078441A1 (en) 2006-09-28 2008-04-03 Dmitry Poplavskyy Semiconductor devices and methods from group iv nanoparticle materials
US20080083926A1 (en) 2006-10-10 2008-04-10 Nokia Corporation Printing device structures using nanoparticles
US20080138966A1 (en) 2006-11-15 2008-06-12 Rogojina Elena V Method of fabricating a densified nanoparticle thin film with a set of occluded pores
CN100490071C (zh) * 2006-12-06 2009-05-20 上海华虹Nec电子有限公司 硅基硅/锗纳米晶粒的制备方法
WO2008073763A2 (en) 2006-12-07 2008-06-19 Innovalight, Inc. Methods for creating a densified group iv semiconductor nanoparticle thin film
CN101647092A (zh) 2006-12-13 2010-02-10 创新发光体公司 在ⅳ族半导体基底上形成外延层的方法
CN101657283B (zh) * 2006-12-21 2013-01-23 创新发光体公司 Iv族纳米粒子及其膜
US7718707B2 (en) 2006-12-21 2010-05-18 Innovalight, Inc. Method for preparing nanoparticle thin films
US20080220175A1 (en) 2007-01-22 2008-09-11 Lorenzo Mangolini Nanoparticles wtih grafted organic molecules
US20080191193A1 (en) 2007-01-22 2008-08-14 Xuegeng Li In situ modification of group iv nanoparticles using gas phase nanoparticle reactors
US20090026421A1 (en) 2007-01-22 2009-01-29 Xuegeng Li Optimized laser pyrolysis reactor and methods therefor
EP2654089A3 (en) * 2007-02-16 2015-08-12 Nanogram Corporation Solar cell structures, photovoltaic modules and corresponding processes
WO2008102258A2 (en) * 2007-02-20 2008-08-28 Innovalight, Inc. Substrate preparation for enhanced thin film fabrication from group iv semiconductor nanoparticles
WO2008118865A2 (en) 2007-03-27 2008-10-02 Innovalight, Inc. Optimized laser pyrolysis reactor and methods therefor
WO2008137738A2 (en) 2007-05-03 2008-11-13 Innovalight, Inc. Method of forming group iv semiconductor junctions using laser processing
US8530589B2 (en) * 2007-05-04 2013-09-10 Kovio, Inc. Print processing for patterned conductor, semiconductor and dielectric materials
FR2916193B1 (fr) 2007-05-18 2009-08-07 Commissariat Energie Atomique Synthese par pyrolyse laser de nanocristaux de silicium.
US20090020411A1 (en) 2007-07-20 2009-01-22 Holunga Dean M Laser pyrolysis with in-flight particle manipulation for powder engineering
CA2702324C (en) * 2007-10-10 2017-04-11 Kovio, Inc. High reliability surveillance and/or identification tag/devices and methods of making and using the same
WO2009090748A1 (ja) 2008-01-17 2009-07-23 Applied Nanoparticle Laboratory Corporation 複合銀ナノ粒子、その製法及び製造装置
US7851336B2 (en) 2008-03-13 2010-12-14 Innovalight, Inc. Method of forming a passivated densified nanoparticle thin film on a substrate
US7704866B2 (en) 2008-03-18 2010-04-27 Innovalight, Inc. Methods for forming composite nanoparticle-metal metallization contacts on a substrate
EP2262816A4 (en) 2008-03-21 2012-02-29 Nanogram Corp SUBMICRONIC PHOSPHORUS PARTICLES BASED ON METAL SILICON NITRIDE OR METAL SILICON OXYNITRIDES AND METHODS OF SYNTHESIZING THESE PHOSPHORES
CN100595238C (zh) * 2008-03-21 2010-03-24 杨建平 一种热塑性粉末导电涂料/油墨及其制备方法
EP2267055A1 (en) 2008-03-28 2010-12-29 JMS Co., Ltd. Method for purifying polymer and process for producing polymer using the method
US20090263977A1 (en) 2008-04-16 2009-10-22 Rogojina Elena V Selective functionalization of doped group iv surfaces using lewis acid/lewis base interaction
US7923368B2 (en) 2008-04-25 2011-04-12 Innovalight, Inc. Junction formation on wafer substrates using group IV nanoparticles
US20100062338A1 (en) 2008-09-11 2010-03-11 Lockheed Martin Corporation Nanostructured anode for high capacity rechargeable batteries
JP5560640B2 (ja) 2008-09-30 2014-07-30 大日本印刷株式会社 半導体基板の製造方法及びその方法により得られた半導体基板
US7615393B1 (en) 2008-10-29 2009-11-10 Innovalight, Inc. Methods of forming multi-doped junctions on a substrate
JP5688032B2 (ja) 2009-01-08 2015-03-25 ナノグラム・コーポレイションＮａｎｏＧｒａｍ Ｃｏｒｐｏｒａｔｉｏｎ ポリシロキサンポリエステル及び無機ナノ粒子の複合体
US8207251B2 (en) * 2009-03-23 2012-06-26 Xerox Corporation Low polarity nanoparticle metal pastes for printing application
US20100294349A1 (en) 2009-05-20 2010-11-25 Uma Srinivasan Back contact solar cells with effective and efficient designs and corresponding patterning processes
US7910393B2 (en) 2009-06-17 2011-03-22 Innovalight, Inc. Methods for forming a dual-doped emitter on a silicon substrate with a sub-critical shear thinning nanoparticle fluid
US8895962B2 (en) * 2010-06-29 2014-11-25 Nanogram Corporation Silicon/germanium nanoparticle inks, laser pyrolysis reactors for the synthesis of nanoparticles and associated methods
US8912083B2 (en) 2011-01-31 2014-12-16 Nanogram Corporation Silicon substrates with doped surface contacts formed from doped silicon inks and corresponding processes
JP2013004309A (ja) 2011-06-16 2013-01-07 Toyota Motor Corp 金属ナノ粒子ペースト
CN103657748B (zh) * 2012-09-25 2015-12-09 中国科学院理化技术研究所 印刷式纸质微流体芯片及制作方法

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05200278A (ja) * 1991-12-27 1993-08-10 Victor Co Of Japan Ltd 超微粒子製造装置
JPH07126005A (ja) * 1993-10-28 1995-05-16 Nippon Oil Co Ltd シリコンコロイドの製造方法
JP2004087546A (ja) * 2002-08-23 2004-03-18 Jsr Corp シリコン膜形成用組成物およびシリコン膜の形成方法
JP2008508166A (ja) * 2004-06-18 2008-03-21 リージェンツ・オブ・ザ・ユニヴァーシティー・オブ・ミネソタ 高周波プラズマを用いてナノ粒子を生成するための方法および装置
JP2006070089A (ja) * 2004-08-31 2006-03-16 Tokyo Denki Univ 環境保全性ナノシリコン溶液及びナノシリコンパウダーとそれらの製造方法
JP2010514585A (ja) * 2007-01-03 2010-05-06 ナノグラム・コーポレイション シリコン／ゲルマニウムによるナノ粒子インク、ドーピングされた粒子、印刷法、及び半導体用途のためのプロセス
WO2009011194A1 (ja) * 2007-07-18 2009-01-22 Konica Minolta Medical & Graphic, Inc. 半導体ナノ粒子蛍光体の集合体、その製造方法、及びそれを用いた単一分子観察方法
WO2009032359A2 (en) * 2007-09-04 2009-03-12 Innovalight, Inc. Group iv nanoparticle junctions and devices therefrom
JP2011505679A (ja) * 2007-09-04 2011-02-24 イノヴァライト インコーポレイテッド Ｉｖ族ナノ粒子接合およびそれを用いたデバイス
JP2009246213A (ja) * 2008-03-31 2009-10-22 Dainippon Printing Co Ltd 半導体基材の製造方法
JP2010013313A (ja) * 2008-07-03 2010-01-21 Konica Minolta Medical & Graphic Inc 半導体ナノ粒子含有膜及び半導体ナノ粒子
JP2013505597A (ja) * 2009-09-21 2013-02-14 ナノグラム・コーポレイション 薄膜太陽電池形成のためのシリコンインク、対応の方法及び太陽電池構造

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016138284A (ja) * 2010-06-29 2016-08-04 ナノグラム・コーポレイションＮａｎｏＧｒａｍ Ｃｏｒｐｏｒａｔｉｏｎ シリコン／ゲルマニウム・ナノ粒子インク、ナノ粒子を合成するためのレーザー熱分解反応器、及び関連の方法
JP2016506441A (ja) * 2012-12-20 2016-03-03 ナノグラム・コーポレイションＮａｎｏＧｒａｍ Ｃｏｒｐｏｒａｔｉｏｎ 超低濃度金属汚染物質を有するシリコン／ゲルマニウム系ナノ粒子ペースト
JP2019502808A (ja) * 2015-11-03 2019-01-31 カネカ アメリカズ ホールディング，インコーポレイティド 誘電率の調整によるナノ粒子の分散安定性の制御及び界面活性剤フリーナノ粒子の固有誘電率の決定
JP2022093375A (ja) * 2015-11-03 2022-06-23 カネカ アメリカズ ホールディング，インコーポレイティド 誘電率の調整によるナノ粒子の分散安定性の制御及び界面活性剤フリーナノ粒子の固有誘電率の決定
JP7187316B2 (ja) 2015-11-03 2022-12-12 カネカ アメリカズ ホールディング，インコーポレイティド 誘電率の調整によるナノ粒子の分散安定性の制御及び界面活性剤フリーナノ粒子の固有誘電率の決定
JP7328393B2 (ja) 2015-11-03 2023-08-16 カネカ アメリカズ ホールディング，インコーポレイティド 誘電率の調整によるナノ粒子の分散安定性の制御及び界面活性剤フリーナノ粒子の固有誘電率の決定

Also Published As

Publication number Publication date
WO2012006071A2 (en) 2012-01-12
US20130221286A1 (en) 2013-08-29
EP2588227A4 (en) 2014-09-10
CN107418295A (zh) 2017-12-01
TW201204790A (en) 2012-02-01
US20150191616A1 (en) 2015-07-09
TWI534210B (zh) 2016-05-21
CN102971070B (zh) 2017-02-08
SG186489A1 (en) 2013-01-30
JP2016138283A (ja) 2016-08-04
JP6257682B2 (ja) 2018-01-10
US8895962B2 (en) 2014-11-25
EP2588227A2 (en) 2013-05-08
US9006720B2 (en) 2015-04-14
JP2016138284A (ja) 2016-08-04
PH12012502527A1 (en) 2017-02-10
EP3097975A1 (en) 2016-11-30
WO2012006071A3 (en) 2012-04-19
KR20130127968A (ko) 2013-11-25
US20110318905A1 (en) 2011-12-29
MY162622A (en) 2017-06-30
CN105602333A (zh) 2016-05-25
CN102971070A (zh) 2013-03-13

Similar Documents

Publication Publication Date Title
JP6257682B2 (ja) シリコン／ゲルマニウム・ナノ粒子インク、ナノ粒子を合成するためのレーザー熱分解反応器、及び関連の方法
JP5710879B2 (ja) シリコン／ゲルマニウムによるナノ粒子インク、ドーピングされた粒子、印刷法、及び半導体用途のためのプロセス
JP2013532225A5 (https=)
US20130189831A1 (en) Silicon/germanium nanoparticle inks and methods of forming inks with desired printing properties
US9475695B2 (en) Printable inks with silicon/germanium based nanoparticles with high viscosity alcohol solvents
JP2010534120A (ja) 粉末設計用空中粒子操作を用いるレーザ熱分解反応器

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140623

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20150122

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150203

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20150507

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20151201

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160401

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20160408

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160511

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20160701

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170308