WO2009011194A1 - 半導体ナノ粒子蛍光体の集合体、その製造方法、及びそれを用いた単一分子観察方法 - Google Patents

半導体ナノ粒子蛍光体の集合体、その製造方法、及びそれを用いた単一分子観察方法 Download PDF

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Publication number
WO2009011194A1
WO2009011194A1 PCT/JP2008/060969 JP2008060969W WO2009011194A1 WO 2009011194 A1 WO2009011194 A1 WO 2009011194A1 JP 2008060969 W JP2008060969 W JP 2008060969W WO 2009011194 A1 WO2009011194 A1 WO 2009011194A1
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WO
WIPO (PCT)
Prior art keywords
aggregate
same
semiconductor nanoparticle
nanoparticle phosphors
production
Prior art date
Application number
PCT/JP2008/060969
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English (en)
French (fr)
Inventor
Kazuyoshi Goan
Kumiko Nishikawa
Original Assignee
Konica Minolta Medical & Graphic, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Medical & Graphic, Inc. filed Critical Konica Minolta Medical & Graphic, Inc.
Priority to JP2009523575A priority Critical patent/JPWO2009011194A1/ja
Priority to US12/668,446 priority patent/US20100210030A1/en
Publication of WO2009011194A1 publication Critical patent/WO2009011194A1/ja

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6428—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes"
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/59—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing silicon

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • Optics & Photonics (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • General Physics & Mathematics (AREA)
  • Pathology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Luminescent Compositions (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Silicon Compounds (AREA)

Abstract

　半導体ナノ粒子蛍光体の集合体を標識試薬として一分子観察をする際、粒子ごとの発光波長、発光強度にばらつきがなく、安定した評価をすることができる半導体ナノ粒子蛍光体の集合体、その製造方法及びそれを用いた単一分子観察方法を提供する。本発明の半導体ナノ粒子蛍光体の集合体の製造方法は、液相法による半導体ナノ粒子蛍光体の集合体の製造方法であって、半導体前駆体をその沸点以上かつ溶媒の沸点以下の温度で反応させる工程を有することを特徴とする。
PCT/JP2008/060969 2007-07-18 2008-06-16 半導体ナノ粒子蛍光体の集合体、その製造方法、及びそれを用いた単一分子観察方法 WO2009011194A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009523575A JPWO2009011194A1 (ja) 2007-07-18 2008-06-16 半導体ナノ粒子蛍光体の集合体、その製造方法、及びそれを用いた単一分子観察方法
US12/668,446 US20100210030A1 (en) 2007-07-18 2008-06-16 Assembly of semiconductor nanoparticle phosphors, preparation method of the same and single-molecule observation method using the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007186777 2007-07-18
JP2007-186777 2007-07-18

Publications (1)

Publication Number Publication Date
WO2009011194A1 true WO2009011194A1 (ja) 2009-01-22

Family

ID=40259534

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/060969 WO2009011194A1 (ja) 2007-07-18 2008-06-16 半導体ナノ粒子蛍光体の集合体、その製造方法、及びそれを用いた単一分子観察方法

Country Status (3)

Country Link
US (1) US20100210030A1 (ja)
JP (1) JPWO2009011194A1 (ja)
WO (1) WO2009011194A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013532225A (ja) * 2010-06-29 2013-08-15 ナノグラム・コーポレイション シリコン／ゲルマニウム・ナノ粒子インク、ナノ粒子を合成するためのレーザー熱分解反応器、及び関連の方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012026149A1 (ja) * 2010-08-27 2012-03-01 コニカミノルタエムジー株式会社 半導体ナノ粒子集積体

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61295220A (ja) * 1985-06-24 1986-12-26 Nitto Electric Ind Co Ltd シリコンの製造方法
JP2005503984A (ja) * 2001-09-19 2005-02-10 エバーグリーン ソーラー， インコーポレイテッド 化学的に接近可能な表面を有するケイ素ナノクリスタルを調製するための高収率方法
JP2005514312A (ja) * 2002-01-18 2005-05-19 ワツカー−ケミー　ゲゼルシヤフト　ミツト　ベシユレンクテル　ハフツング アモルファスシリコンおよび／またはこれから得られるオルガノハロゲンシランの製造方法
JP2006315923A (ja) * 2005-05-13 2006-11-24 Kenji Yamamoto 半導体ナノ粒子の製造方法
JP2007012702A (ja) * 2005-06-28 2007-01-18 Toshiba Corp 半導体ナノ粒子の製造方法及び半導体材料の表面を半導体元素で被覆する方法、並びにそれらにより製造された半導体ナノ粒子、表面が被覆された半導体材料、及び発光素子
WO2007086410A1 (ja) * 2006-01-27 2007-08-02 Konica Minolta Medical & Graphic, Inc. コア／シェル型ナノ粒子、生体物質標識剤および粒子の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6090200A (en) * 1997-11-18 2000-07-18 Gray; Henry F. Nanoparticle phosphors manufactured using the bicontinuous cubic phase process

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61295220A (ja) * 1985-06-24 1986-12-26 Nitto Electric Ind Co Ltd シリコンの製造方法
JP2005503984A (ja) * 2001-09-19 2005-02-10 エバーグリーン ソーラー， インコーポレイテッド 化学的に接近可能な表面を有するケイ素ナノクリスタルを調製するための高収率方法
JP2005514312A (ja) * 2002-01-18 2005-05-19 ワツカー−ケミー　ゲゼルシヤフト　ミツト　ベシユレンクテル　ハフツング アモルファスシリコンおよび／またはこれから得られるオルガノハロゲンシランの製造方法
JP2006315923A (ja) * 2005-05-13 2006-11-24 Kenji Yamamoto 半導体ナノ粒子の製造方法
JP2007012702A (ja) * 2005-06-28 2007-01-18 Toshiba Corp 半導体ナノ粒子の製造方法及び半導体材料の表面を半導体元素で被覆する方法、並びにそれらにより製造された半導体ナノ粒子、表面が被覆された半導体材料、及び発光素子
WO2007086410A1 (ja) * 2006-01-27 2007-08-02 Konica Minolta Medical & Graphic, Inc. コア／シェル型ナノ粒子、生体物質標識剤および粒子の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013532225A (ja) * 2010-06-29 2013-08-15 ナノグラム・コーポレイション シリコン／ゲルマニウム・ナノ粒子インク、ナノ粒子を合成するためのレーザー熱分解反応器、及び関連の方法

Also Published As

Publication number Publication date
US20100210030A1 (en) 2010-08-19
JPWO2009011194A1 (ja) 2010-09-16

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