CN101248222B - 粒子半导体材料的掺杂 - Google Patents
粒子半导体材料的掺杂 Download PDFInfo
- Publication number
- CN101248222B CN101248222B CN200680031074.5A CN200680031074A CN101248222B CN 101248222 B CN101248222 B CN 101248222B CN 200680031074 A CN200680031074 A CN 200680031074A CN 101248222 B CN101248222 B CN 101248222B
- Authority
- CN
- China
- Prior art keywords
- semiconductor materials
- salt
- particulate semiconductor
- preparation
- particulate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/52—Electrically conductive inks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
Abstract
Description
Claims (26)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ZA200506752 | 2005-08-23 | ||
ZA2005/06752 | 2005-08-23 | ||
PCT/IB2006/002290 WO2007023362A1 (en) | 2005-08-23 | 2006-08-23 | Doping of particulate semiconductor materials |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101248222A CN101248222A (zh) | 2008-08-20 |
CN101248222B true CN101248222B (zh) | 2015-05-13 |
Family
ID=37416174
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200680031074.5A Expired - Fee Related CN101248222B (zh) | 2005-08-23 | 2006-08-23 | 粒子半导体材料的掺杂 |
Country Status (10)
Country | Link |
---|---|
US (1) | US7763530B2 (zh) |
EP (1) | EP1926843B1 (zh) |
JP (1) | JP5193041B2 (zh) |
KR (1) | KR101345277B1 (zh) |
CN (1) | CN101248222B (zh) |
AT (1) | ATE518024T1 (zh) |
ES (1) | ES2370519T3 (zh) |
PT (1) | PT1926843E (zh) |
WO (1) | WO2007023362A1 (zh) |
ZA (1) | ZA200801815B (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090075083A1 (en) | 1997-07-21 | 2009-03-19 | Nanogram Corporation | Nanoparticle production and corresponding structures |
US8568684B2 (en) | 2000-10-17 | 2013-10-29 | Nanogram Corporation | Methods for synthesizing submicron doped silicon particles |
US6599631B2 (en) | 2001-01-26 | 2003-07-29 | Nanogram Corporation | Polymer-inorganic particle composites |
US7226966B2 (en) | 2001-08-03 | 2007-06-05 | Nanogram Corporation | Structures incorporating polymer-inorganic particle blends |
ZA200506095B (en) * | 2003-01-30 | 2006-10-25 | Univ Cape Town | A thin film semiconductor device and method of manufacturing a thin film semiconductor device |
WO2008085806A1 (en) | 2007-01-03 | 2008-07-17 | Nanogram Corporation | Nanoparticle inks based on silicon/germanium, doped particles, printing and processes for semiconductor applications |
US8895962B2 (en) | 2010-06-29 | 2014-11-25 | Nanogram Corporation | Silicon/germanium nanoparticle inks, laser pyrolysis reactors for the synthesis of nanoparticles and associated methods |
JP2013539908A (ja) | 2010-09-13 | 2013-10-28 | ピーエスティ・センサーズ・(プロプライエタリー)・リミテッド | ディスクリート電子部品の組立およびパッケージング方法 |
KR20130128383A (ko) | 2010-09-13 | 2013-11-26 | 피에스티 센서스 (피티와이) 리미티드 | 프린팅된 온도 센서 |
CN104471679B (zh) * | 2012-07-20 | 2020-11-03 | 旭化成株式会社 | 半导体膜和半导体元件 |
JP6271716B2 (ja) | 2013-05-24 | 2018-01-31 | 帝人株式会社 | シリコン/ゲルマニウム系ナノ粒子及び高粘度アルコール溶媒を含有する印刷用インク |
CN108319807B (zh) * | 2018-01-05 | 2019-12-17 | 东北大学 | 一种掺杂式能源材料的高通量计算筛选方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5926727A (en) * | 1995-12-11 | 1999-07-20 | Stevens; Gary Don | Phosphorous doping a semiconductor particle |
US6200508B1 (en) * | 1996-10-25 | 2001-03-13 | Massachusetts Institute Of Technology | Method of fabricating electro-mechanical devices by multilayer deposition |
US20050008880A1 (en) * | 2003-07-08 | 2005-01-13 | Klaus Kunze | Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3709813A (en) * | 1971-04-30 | 1973-01-09 | Texas Instruments Inc | Ion-selective electrochemical sensor |
US3776770A (en) * | 1971-10-08 | 1973-12-04 | Western Electric Co | Method of selectively depositing a metal on a surface of a substrate |
US5278097A (en) * | 1989-07-31 | 1994-01-11 | Texas Instruments Incorporated | Method of making doped silicon spheres |
US5677546A (en) * | 1995-05-19 | 1997-10-14 | Uniax Corporation | Polymer light-emitting electrochemical cells in surface cell configuration |
US6468806B1 (en) * | 1996-10-02 | 2002-10-22 | Symyx Technologies, Inc. | Potential masking systems and methods for combinatorial library synthesis |
SG98433A1 (en) * | 1999-12-21 | 2003-09-19 | Ciba Sc Holding Ag | Iodonium salts as latent acid donors |
US6331477B1 (en) * | 2000-01-24 | 2001-12-18 | Ball Semiconductor, Inc. | Doping of spherical semiconductors during non-contact processing in the liquid state |
EP1417702B1 (en) * | 2001-08-10 | 2011-10-05 | Evergreen Solar Inc. | Method for doping semiconductors |
US7575699B2 (en) * | 2004-09-20 | 2009-08-18 | The Regents Of The University Of California | Method for synthesis of colloidal nanoparticles |
WO2007146680A1 (en) * | 2006-06-06 | 2007-12-21 | Florida State University Research Foundation , Inc. | Stabilized silica colloid |
US20080193766A1 (en) * | 2007-02-13 | 2008-08-14 | Northern Nanotechnologies | Control of Transport to and from Nanoparticle Surfaces |
US8895652B2 (en) * | 2007-06-12 | 2014-11-25 | Ajjer, Llc | High refractive index materials and composites |
JP2010009831A (ja) * | 2008-06-25 | 2010-01-14 | Tdk Corp | 光電変換素子 |
-
2006
- 2006-08-23 JP JP2008527528A patent/JP5193041B2/ja not_active Expired - Fee Related
- 2006-08-23 US US11/990,816 patent/US7763530B2/en not_active Expired - Fee Related
- 2006-08-23 PT PT06779969T patent/PT1926843E/pt unknown
- 2006-08-23 AT AT06779969T patent/ATE518024T1/de active
- 2006-08-23 EP EP06779969A patent/EP1926843B1/en not_active Not-in-force
- 2006-08-23 CN CN200680031074.5A patent/CN101248222B/zh not_active Expired - Fee Related
- 2006-08-23 WO PCT/IB2006/002290 patent/WO2007023362A1/en active Application Filing
- 2006-08-23 ES ES06779969T patent/ES2370519T3/es active Active
- 2006-08-24 ZA ZA200801815A patent/ZA200801815B/xx unknown
-
2008
- 2008-03-20 KR KR1020087006781A patent/KR101345277B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5926727A (en) * | 1995-12-11 | 1999-07-20 | Stevens; Gary Don | Phosphorous doping a semiconductor particle |
US6200508B1 (en) * | 1996-10-25 | 2001-03-13 | Massachusetts Institute Of Technology | Method of fabricating electro-mechanical devices by multilayer deposition |
US20050008880A1 (en) * | 2003-07-08 | 2005-01-13 | Klaus Kunze | Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom |
Also Published As
Publication number | Publication date |
---|---|
US20090092855A1 (en) | 2009-04-09 |
ZA200801815B (en) | 2009-10-28 |
WO2007023362A1 (en) | 2007-03-01 |
JP2009505930A (ja) | 2009-02-12 |
ES2370519T3 (es) | 2011-12-19 |
EP1926843A1 (en) | 2008-06-04 |
EP1926843B1 (en) | 2011-07-27 |
KR20080098356A (ko) | 2008-11-07 |
US7763530B2 (en) | 2010-07-27 |
ATE518024T1 (de) | 2011-08-15 |
CN101248222A (zh) | 2008-08-20 |
KR101345277B1 (ko) | 2013-12-27 |
JP5193041B2 (ja) | 2013-05-08 |
PT1926843E (pt) | 2011-09-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: PST SENSORS (PTY) LTD. Free format text: FORMER OWNER: UNIV CAPE TOWN Effective date: 20120615 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20120615 Address after: Cape Town Applicant after: Pst Sensors Proprietary Ltd. Address before: Cape Town Applicant before: Univ Cape Town |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150513 Termination date: 20190823 |
|
CF01 | Termination of patent right due to non-payment of annual fee |