ATE518024T1 - Dotieren von teilchenförmigen halbleitermaterialien - Google Patents

Dotieren von teilchenförmigen halbleitermaterialien

Info

Publication number
ATE518024T1
ATE518024T1 AT06779969T AT06779969T ATE518024T1 AT E518024 T1 ATE518024 T1 AT E518024T1 AT 06779969 T AT06779969 T AT 06779969T AT 06779969 T AT06779969 T AT 06779969T AT E518024 T1 ATE518024 T1 AT E518024T1
Authority
AT
Austria
Prior art keywords
semiconductor material
doping
semiconductor materials
particle
shaped semiconductor
Prior art date
Application number
AT06779969T
Other languages
English (en)
Inventor
David Thomas Britton
Margit Haerting
Original Assignee
Univ Cape Town
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Cape Town filed Critical Univ Cape Town
Application granted granted Critical
Publication of ATE518024T1 publication Critical patent/ATE518024T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/52—Electrically conductive inks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Wood Science & Technology (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
AT06779969T 2005-08-23 2006-08-23 Dotieren von teilchenförmigen halbleitermaterialien ATE518024T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
ZA200506752 2005-08-23
PCT/IB2006/002290 WO2007023362A1 (en) 2005-08-23 2006-08-23 Doping of particulate semiconductor materials

Publications (1)

Publication Number Publication Date
ATE518024T1 true ATE518024T1 (de) 2011-08-15

Family

ID=37416174

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06779969T ATE518024T1 (de) 2005-08-23 2006-08-23 Dotieren von teilchenförmigen halbleitermaterialien

Country Status (10)

Country Link
US (1) US7763530B2 (de)
EP (1) EP1926843B1 (de)
JP (1) JP5193041B2 (de)
KR (1) KR101345277B1 (de)
CN (1) CN101248222B (de)
AT (1) ATE518024T1 (de)
ES (1) ES2370519T3 (de)
PT (1) PT1926843E (de)
WO (1) WO2007023362A1 (de)
ZA (1) ZA200801815B (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7226966B2 (en) 2001-08-03 2007-06-05 Nanogram Corporation Structures incorporating polymer-inorganic particle blends
US6599631B2 (en) 2001-01-26 2003-07-29 Nanogram Corporation Polymer-inorganic particle composites
US20090075083A1 (en) 1997-07-21 2009-03-19 Nanogram Corporation Nanoparticle production and corresponding structures
US8568684B2 (en) 2000-10-17 2013-10-29 Nanogram Corporation Methods for synthesizing submicron doped silicon particles
EP1593163B1 (de) * 2003-01-30 2015-06-17 PST Sensors (Pty) Limited Dünnfilm-halbleiterbauelement und verfahren zur herstellung eines dünnfilm-halbleiterbauelements
EP2109643A4 (de) 2007-01-03 2011-09-07 Nanogram Corp Auf silicium/germanium basierende nanopartikeltinten, dotierte partikel, druckverfahren und verfahren für halbleiteranwendungen
US8895962B2 (en) 2010-06-29 2014-11-25 Nanogram Corporation Silicon/germanium nanoparticle inks, laser pyrolysis reactors for the synthesis of nanoparticles and associated methods
JP2013539908A (ja) 2010-09-13 2013-10-28 ピーエスティ・センサーズ・（プロプライエタリー）・リミテッド ディスクリート電子部品の組立およびパッケージング方法
WO2012035494A1 (en) 2010-09-13 2012-03-22 University Of Cape Town Printed temperature sensor
CN110459622A (zh) * 2012-07-20 2019-11-15 旭化成株式会社 半导体膜和半导体元件
KR101958056B1 (ko) 2013-05-24 2019-03-13 데이진 가부시키가이샤 고점도 알콜 용매 및 실리콘/게르마늄계 나노입자를 포함하는 인쇄용 잉크
CN108319807B (zh) * 2018-01-05 2019-12-17 东北大学 一种掺杂式能源材料的高通量计算筛选方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3709813A (en) * 1971-04-30 1973-01-09 Texas Instruments Inc Ion-selective electrochemical sensor
US3776770A (en) * 1971-10-08 1973-12-04 Western Electric Co Method of selectively depositing a metal on a surface of a substrate
US5278097A (en) * 1989-07-31 1994-01-11 Texas Instruments Incorporated Method of making doped silicon spheres
US5677546A (en) * 1995-05-19 1997-10-14 Uniax Corporation Polymer light-emitting electrochemical cells in surface cell configuration
US5926727A (en) * 1995-12-11 1999-07-20 Stevens; Gary Don Phosphorous doping a semiconductor particle
WO1998014641A1 (en) * 1996-10-02 1998-04-09 Symyx Technologies Potential masking systems and methods for combinatorial library synthesis
BR9705156A (pt) * 1996-10-25 2000-01-04 Massachusetts Inst Technology Processo e sistema de fabricar um componente que consiste em partes constituìdas de diferentes materiais
SG98433A1 (en) * 1999-12-21 2003-09-19 Ciba Sc Holding Ag Iodonium salts as latent acid donors
US6331477B1 (en) * 2000-01-24 2001-12-18 Ball Semiconductor, Inc. Doping of spherical semiconductors during non-contact processing in the liquid state
US7001455B2 (en) * 2001-08-10 2006-02-21 Evergreen Solar, Inc. Method and apparatus for doping semiconductors
US7879696B2 (en) * 2003-07-08 2011-02-01 Kovio, Inc. Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom
US7575699B2 (en) * 2004-09-20 2009-08-18 The Regents Of The University Of California Method for synthesis of colloidal nanoparticles
WO2007146680A1 (en) * 2006-06-06 2007-12-21 Florida State University Research Foundation , Inc. Stabilized silica colloid
US20080193766A1 (en) * 2007-02-13 2008-08-14 Northern Nanotechnologies Control of Transport to and from Nanoparticle Surfaces
US8895652B2 (en) * 2007-06-12 2014-11-25 Ajjer, Llc High refractive index materials and composites
JP2010009831A (ja) * 2008-06-25 2010-01-14 Tdk Corp 光電変換素子

Also Published As

Publication number Publication date
PT1926843E (pt) 2011-09-16
JP2009505930A (ja) 2009-02-12
CN101248222A (zh) 2008-08-20
JP5193041B2 (ja) 2013-05-08
EP1926843B1 (de) 2011-07-27
EP1926843A1 (de) 2008-06-04
CN101248222B (zh) 2015-05-13
ES2370519T3 (es) 2011-12-19
KR101345277B1 (ko) 2013-12-27
US7763530B2 (en) 2010-07-27
WO2007023362A1 (en) 2007-03-01
ZA200801815B (en) 2009-10-28
KR20080098356A (ko) 2008-11-07
US20090092855A1 (en) 2009-04-09

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