PT1926843E - Dopagem de materiais semicondutores sob a forma de partículas - Google Patents

Dopagem de materiais semicondutores sob a forma de partículas Download PDF

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Publication number
PT1926843E
PT1926843E PT06779969T PT06779969T PT1926843E PT 1926843 E PT1926843 E PT 1926843E PT 06779969 T PT06779969 T PT 06779969T PT 06779969 T PT06779969 T PT 06779969T PT 1926843 E PT1926843 E PT 1926843E
Authority
PT
Portugal
Prior art keywords
semiconductor material
doping
semiconductor materials
particulate
particulate semiconductor
Prior art date
Application number
PT06779969T
Other languages
English (en)
Inventor
David Thomas Britton
Margit Haerting
Original Assignee
Univ Cape Town
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Cape Town filed Critical Univ Cape Town
Publication of PT1926843E publication Critical patent/PT1926843E/pt

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/52—Electrically conductive inks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
PT06779969T 2005-08-23 2006-08-23 Dopagem de materiais semicondutores sob a forma de partículas PT1926843E (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ZA200506752 2005-08-23

Publications (1)

Publication Number Publication Date
PT1926843E true PT1926843E (pt) 2011-09-16

Family

ID=37416174

Family Applications (1)

Application Number Title Priority Date Filing Date
PT06779969T PT1926843E (pt) 2005-08-23 2006-08-23 Dopagem de materiais semicondutores sob a forma de partículas

Country Status (10)

Country Link
US (1) US7763530B2 (pt)
EP (1) EP1926843B1 (pt)
JP (1) JP5193041B2 (pt)
KR (1) KR101345277B1 (pt)
CN (1) CN101248222B (pt)
AT (1) ATE518024T1 (pt)
ES (1) ES2370519T3 (pt)
PT (1) PT1926843E (pt)
WO (1) WO2007023362A1 (pt)
ZA (1) ZA200801815B (pt)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090075083A1 (en) 1997-07-21 2009-03-19 Nanogram Corporation Nanoparticle production and corresponding structures
US6599631B2 (en) 2001-01-26 2003-07-29 Nanogram Corporation Polymer-inorganic particle composites
US8568684B2 (en) 2000-10-17 2013-10-29 Nanogram Corporation Methods for synthesizing submicron doped silicon particles
US7226966B2 (en) 2001-08-03 2007-06-05 Nanogram Corporation Structures incorporating polymer-inorganic particle blends
ZA200506095B (en) * 2003-01-30 2006-10-25 Univ Cape Town A thin film semiconductor device and method of manufacturing a thin film semiconductor device
CN103333526A (zh) 2007-01-03 2013-10-02 内诺格雷姆公司 基于硅/锗的纳米颗粒油墨、掺杂型颗粒、用于半导体应用的印刷和方法
US8895962B2 (en) 2010-06-29 2014-11-25 Nanogram Corporation Silicon/germanium nanoparticle inks, laser pyrolysis reactors for the synthesis of nanoparticles and associated methods
WO2012035494A1 (en) 2010-09-13 2012-03-22 University Of Cape Town Printed temperature sensor
EP2617270A4 (en) 2010-09-13 2017-10-04 PST Sensors (Pty) Limited Assembling and packaging a discrete electronic component
US10944018B2 (en) * 2012-07-20 2021-03-09 Asahi Kasei Kabushiki Kaisha Semiconductor film and semiconductor element
WO2014189886A1 (en) 2013-05-24 2014-11-27 Nanogram Corporation Printable inks with silicon/germanium based nanoparticles with high viscosity alcohol solvents
CN108319807B (zh) * 2018-01-05 2019-12-17 东北大学 一种掺杂式能源材料的高通量计算筛选方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3709813A (en) * 1971-04-30 1973-01-09 Texas Instruments Inc Ion-selective electrochemical sensor
US3776770A (en) * 1971-10-08 1973-12-04 Western Electric Co Method of selectively depositing a metal on a surface of a substrate
US5278097A (en) * 1989-07-31 1994-01-11 Texas Instruments Incorporated Method of making doped silicon spheres
US5677546A (en) * 1995-05-19 1997-10-14 Uniax Corporation Polymer light-emitting electrochemical cells in surface cell configuration
US5926727A (en) * 1995-12-11 1999-07-20 Stevens; Gary Don Phosphorous doping a semiconductor particle
AU4662097A (en) * 1996-10-01 1998-04-24 Symyx Technologies, Inc. Potential masking systems and methods for combinitorial library synthesis
BR9705156A (pt) * 1996-10-25 2000-01-04 Massachusetts Inst Technology Processo e sistema de fabricar um componente que consiste em partes constituìdas de diferentes materiais
SG98433A1 (en) * 1999-12-21 2003-09-19 Ciba Sc Holding Ag Iodonium salts as latent acid donors
US6331477B1 (en) * 2000-01-24 2001-12-18 Ball Semiconductor, Inc. Doping of spherical semiconductors during non-contact processing in the liquid state
US7001455B2 (en) * 2001-08-10 2006-02-21 Evergreen Solar, Inc. Method and apparatus for doping semiconductors
US7879696B2 (en) 2003-07-08 2011-02-01 Kovio, Inc. Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom
US7575699B2 (en) * 2004-09-20 2009-08-18 The Regents Of The University Of California Method for synthesis of colloidal nanoparticles
WO2007146680A1 (en) * 2006-06-06 2007-12-21 Florida State University Research Foundation , Inc. Stabilized silica colloid
US20080193766A1 (en) * 2007-02-13 2008-08-14 Northern Nanotechnologies Control of Transport to and from Nanoparticle Surfaces
US8895652B2 (en) * 2007-06-12 2014-11-25 Ajjer, Llc High refractive index materials and composites
JP2010009831A (ja) * 2008-06-25 2010-01-14 Tdk Corp 光電変換素子

Also Published As

Publication number Publication date
ATE518024T1 (de) 2011-08-15
EP1926843A1 (en) 2008-06-04
CN101248222B (zh) 2015-05-13
US7763530B2 (en) 2010-07-27
CN101248222A (zh) 2008-08-20
JP2009505930A (ja) 2009-02-12
ES2370519T3 (es) 2011-12-19
JP5193041B2 (ja) 2013-05-08
KR101345277B1 (ko) 2013-12-27
US20090092855A1 (en) 2009-04-09
KR20080098356A (ko) 2008-11-07
ZA200801815B (en) 2009-10-28
EP1926843B1 (en) 2011-07-27
WO2007023362A1 (en) 2007-03-01

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