JP2013179276A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2013179276A JP2013179276A JP2013010974A JP2013010974A JP2013179276A JP 2013179276 A JP2013179276 A JP 2013179276A JP 2013010974 A JP2013010974 A JP 2013010974A JP 2013010974 A JP2013010974 A JP 2013010974A JP 2013179276 A JP2013179276 A JP 2013179276A
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- Prior art keywords
- film
- semiconductor film
- oxide semiconductor
- oxide
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 472
- 239000013078 crystal Substances 0.000 claims abstract description 99
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 78
- 229910052738 indium Inorganic materials 0.000 claims abstract description 72
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 67
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 66
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 43
- 230000015572 biosynthetic process Effects 0.000 claims description 35
- 239000011701 zinc Substances 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 125000004429 atom Chemical group 0.000 claims description 14
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 13
- 229910052725 zinc Inorganic materials 0.000 claims description 13
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 abstract description 129
- 229910052760 oxygen Inorganic materials 0.000 abstract description 129
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 127
- 239000010408 film Substances 0.000 description 741
- 239000010410 layer Substances 0.000 description 87
- 238000000034 method Methods 0.000 description 64
- 230000007704 transition Effects 0.000 description 50
- 239000003990 capacitor Substances 0.000 description 36
- 238000010438 heat treatment Methods 0.000 description 34
- 239000000758 substrate Substances 0.000 description 32
- 238000011282 treatment Methods 0.000 description 31
- 239000012535 impurity Substances 0.000 description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 239000007789 gas Substances 0.000 description 20
- 239000000463 material Substances 0.000 description 20
- 229910052710 silicon Inorganic materials 0.000 description 20
- 239000010703 silicon Substances 0.000 description 20
- VUFNLQXQSDUXKB-DOFZRALJSA-N 2-[4-[4-[bis(2-chloroethyl)amino]phenyl]butanoyloxy]ethyl (5z,8z,11z,14z)-icosa-5,8,11,14-tetraenoate Chemical compound CCCCC\C=C/C\C=C/C\C=C/C\C=C/CCCC(=O)OCCOC(=O)CCCC1=CC=C(N(CCCl)CCCl)C=C1 VUFNLQXQSDUXKB-DOFZRALJSA-N 0.000 description 18
- 239000002019 doping agent Substances 0.000 description 18
- 229910052739 hydrogen Inorganic materials 0.000 description 18
- 239000001257 hydrogen Substances 0.000 description 17
- 238000004364 calculation method Methods 0.000 description 15
- 238000004544 sputter deposition Methods 0.000 description 14
- 206010021143 Hypoxia Diseases 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- 230000006870 function Effects 0.000 description 9
- 150000002431 hydrogen Chemical class 0.000 description 9
- 229910044991 metal oxide Inorganic materials 0.000 description 9
- 150000004706 metal oxides Chemical class 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 238000003860 storage Methods 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 229910001868 water Inorganic materials 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 208000005156 Dehydration Diseases 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- 230000018044 dehydration Effects 0.000 description 8
- 238000006297 dehydration reaction Methods 0.000 description 8
- 238000006356 dehydrogenation reaction Methods 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- 239000002356 single layer Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 238000000231 atomic layer deposition Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- -1 oxygen radicals Chemical class 0.000 description 6
- 239000003381 stabilizer Substances 0.000 description 6
- 239000012298 atmosphere Substances 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000003795 desorption Methods 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 229960001730 nitrous oxide Drugs 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 230000035699 permeability Effects 0.000 description 5
- 238000005477 sputtering target Methods 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- 229910006404 SnO 2 Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910001882 dioxygen Inorganic materials 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 238000003775 Density Functional Theory Methods 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910007541 Zn O Inorganic materials 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229910052754 neon Inorganic materials 0.000 description 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 3
- 239000001272 nitrous oxide Substances 0.000 description 3
- 238000006213 oxygenation reaction Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 238000000560 X-ray reflectometry Methods 0.000 description 2
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910001195 gallium oxide Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 235000013842 nitrous oxide Nutrition 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 2
- 238000004772 slater type orbital Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 239000004341 Octafluorocyclobutane Substances 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000011276 addition treatment Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 238000005284 basis set Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000001307 laser spectroscopy Methods 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 description 1
- 235000019407 octafluorocyclobutane Nutrition 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229910052696 pnictogen Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
【解決手段】第1の酸化物半導体膜と、c軸配向した結晶部を含む第2の酸化物半導体膜と、c軸配向した結晶部を含む酸化物膜と、を有し、第1の酸化物半導体膜、第2の酸化物半導体膜及び酸化物膜は、IGZO膜で構成され、第2の酸化物半導体膜が有するインジウムの含有量は、第1の酸化物半導体膜が有するインジウムの含有量より大きく、第1の酸化物半導体膜が有するインジウムの含有量は、酸化物膜が有するインジウムの含有量より大きく、酸化物膜が有するガリウムの含有量は、第1の酸化物半導体膜が有するガリウムの含有量より大きく、第1の酸化物半導体膜が有するガリウムの含有量は、第2の酸化物半導体膜が有するガリウムの含有量より大きい構成とする。
【選択図】図1
Description
本実施の形態では、半導体装置における、c軸配向した結晶部を含む酸化物半導体膜を用いたトランジスタの構成について説明する。
本実施の形態では、半導体装置における、c軸配向した結晶部を含む酸化物半導体膜を用いたトランジスタの構成について、上記実施の形態とは異なる断面図を示し、その作製方法を併せて説明する。
本実施の形態では、実施の形態2に示すトランジスタと、トランジスタと同層に設けることができる容量素子の構成について図7(A)に断面図を示し、説明する。
本実施の形態では、実施の形態1で説明したトランジスタに、別の構成を追加した形態について一例を示し、説明する。
本実施の形態では、上記実施の形態1で説明した、c軸配向した結晶部を含む酸化物半導体膜をチャネル領域に具備するトランジスタを使用し、電力が供給されない状況でも記憶内容の保持が可能で、かつ、書き込み回数にも制限が無い記憶装置の回路構成の一例を、図面を用いて説明する。
本実施の形態では、シリコンをチャネル領域に具備するトランジスタで構成される揮発性記憶部と、上記実施の形態1で説明した、c軸配向した結晶部を含む酸化物半導体膜をチャネル領域に具備するトランジスタで構成される不揮発性の記憶部とを一組として不揮発性フリップフロップとする構成例について説明する。当該不揮発性フリップフロップを単数または複数設けることで1ビットまたは複数ビットのデータを記憶することができる不揮発性レジスタとすることができる。
(1)過剰酸素原子の第1の遷移 Z=1においてT=206K(−67℃)
(2)過剰酸素原子の第2の遷移 Z=1においてT=923K(650℃)
(3)酸素欠損の第1の遷移 Z=1においてT=701K(428℃)
(4)酸素欠損の第2の遷移 Z=1においてT=1590K(1317℃)
(1)過剰酸素原子の第1の遷移 T=300KにおいてZ=1.2×104(/秒)
(2)過剰酸素原子の第2の遷移 T=300KにおいてZ=1.0×10−27(/秒)
(3)酸素欠損の第1の遷移 T=300KにおいてZ=4.3×10−18(/秒)
(4)酸素欠損の第2の遷移 T=300KにおいてZ=1.4×10−56(/秒)
(1)過剰酸素原子の第1の遷移 T=723KにおいてZ=2.0×109(/秒)
(2)過剰酸素原子の第2の遷移 T=723KにおいてZ=2.5×10−4(/秒)
(3)酸素欠損の第1の遷移 T=723KにおいてZ=2.5(/秒)
(4)酸素欠損の第2の遷移 T=723KにおいてZ=2.5×10−16(/秒)
102 酸化膜
104 第1の酸化物半導体膜
106 第2の酸化物半導体膜
106A チャネル領域
106B 低抵抗領域
108 酸化物膜
110 ゲート電極
112 層間絶縁膜
114A ソース電極
114B ドレイン電極
116 領域
118 点線
120 溝
122 絶縁膜
200 基板
202 酸化膜
204 第1の酸化物半導体膜
206 第2の酸化物半導体膜
206A チャネル領域
206B 低抵抗領域
208 酸化物膜
209 サイドウォール
210 ゲート電極
211 絶縁膜
212 絶縁膜
213A ソース電極
213B ドレイン電極
214A ソース電極
214B ドレイン電極
300 トランジスタ
301 容量素子
302 電極層
303 絶縁膜
304 電極層
305 絶縁膜
306 絶縁膜
321 下部素子層
322 配線層
323 配線層
324 上部素子層
331 nチャネル型トランジスタ
332 pチャネル型トランジスタ
333 基板
334 BOX層
335 SOI層
336 n型不純物領域
337 ゲート絶縁膜
338 ゲート電極
339 p型不純物領域
340 絶縁膜
341 配線
342 素子分離絶縁層
344 絶縁膜
345 絶縁膜
401 絶縁膜
801 トランジスタ
802 トランジスタ
803 容量素子
810 メモリセル
811 トランジスタ
812 容量素子
900 不揮発性レジスタ
901 不揮発性フリップフロップ
902 揮発性記憶部
903 不揮発性記憶部
904 フリップフロップ
905 トランジスタ
906 容量素子
950 CPU
951 制御装置部
952 演算装置部
953 データバッファ回路
954 電源制御回路
955 回路
956 内部制御信号生成回路
957 データラッチ回路
958 命令レジスタ回路
959 コントロール回路
960 レジスタ群
961 アドレスバッファ回路
962 ステートマシーン
963 プログラムカウンタ
964 汎用レジスタ回路
965 演算レジスタ回路
966 ALU
Claims (10)
- 第1の酸化物半導体膜と該第1の酸化物半導体膜上に積層して設けられたc軸配向した結晶部を含む第2の酸化物半導体膜とを有する島状の半導体膜と、
前記島状の半導体膜の側面に接して設けられた、c軸配向した結晶部を含む酸化物膜と、を有し、
前記第1の酸化物半導体膜、前記第2の酸化物半導体膜及び前記酸化物膜は、インジウム、ガリウム及び亜鉛を含む酸化物で構成され、
前記第2の酸化物半導体膜が有するインジウムの含有量は、前記第1の酸化物半導体膜が有するインジウムの含有量より大きく、前記第1の酸化物半導体膜が有するインジウムの含有量は、前記酸化物膜が有するインジウムの含有量より大きく、前記酸化物膜が有するガリウムの含有量は、前記第1の酸化物半導体膜が有するガリウムの含有量より大きく、前記第1の酸化物半導体膜が有するガリウムの含有量は、前記第2の酸化物半導体膜が有するガリウムの含有量より大きいことを特徴とする半導体装置。 - 第1の酸化物半導体膜と該第1の酸化物半導体膜上に積層して設けられたc軸配向した結晶部を含む第2の酸化物半導体膜とを有する島状の半導体膜と、
前記島状の半導体膜の側面に接して設けられた、c軸配向した結晶部を含む酸化物膜と、
前記酸化物膜上に設けられたゲート電極と、を有し、
前記第1の酸化物半導体膜、前記第2の酸化物半導体膜及び前記酸化物膜は、インジウム、ガリウム及び亜鉛を含む酸化物で構成され、
前記第2の酸化物半導体膜が有するインジウムの含有量は、前記第1の酸化物半導体膜が有するインジウムの含有量より大きく、前記第1の酸化物半導体膜が有するインジウムの含有量は、前記酸化物膜が有するインジウムの含有量より大きく、前記酸化物膜が有するガリウムの含有量は、前記第1の酸化物半導体膜が有するガリウムの含有量より大きく、前記第1の酸化物半導体膜が有するガリウムの含有量は、前記第2の酸化物半導体膜が有するガリウムの含有量より大きいことを特徴とする半導体装置。 - 第1の酸化物半導体膜と該第1の酸化物半導体膜上に積層して設けられたc軸配向した結晶部を含む第2の酸化物半導体膜とを有する島状の半導体膜と、
前記島状の半導体膜のチャネル長方向の側面に接して設けられたソース電極及びドレイン電極と、
前記島状の半導体膜のチャネル幅方向の側面に接して設けられた、c軸配向した結晶部を含む酸化物膜と、
前記酸化物膜上に設けられたゲート電極と、を有し、
前記第1の酸化物半導体膜、前記第2の酸化物半導体膜及び前記酸化物膜は、インジウム、ガリウム及び亜鉛を含む酸化物で構成され、
前記第2の酸化物半導体膜が有するインジウムの含有量は、前記第1の酸化物半導体膜が有するインジウムの含有量より大きく、前記第1の酸化物半導体膜が有するインジウムの含有量は、前記酸化物膜が有するインジウムの含有量より大きく、前記酸化物膜が有するガリウムの含有量は、前記第1の酸化物半導体膜が有するガリウムの含有量より大きく、前記第1の酸化物半導体膜が有するガリウムの含有量は、前記第2の酸化物半導体膜が有するガリウムの含有量より大きいことを特徴とする半導体装置。 - 請求項2または請求項3において、前記ゲート電極の側面には、サイドウォールが設けられていることを特徴とする半導体装置。
- 請求項1乃至請求項3のいずれか一において、前記酸化物膜は、インジウム、ガリウム及び亜鉛を含む酸化物で構成された膜上に、無機絶縁膜が積層した構造であることを特徴とする半導体装置。
- 請求項1乃至請求項3のいずれか一において、前記ゲート電極上、前記ソース電極上及び前記ドレイン電極上には、酸化アルミニウム膜が設けられていることを特徴とする半導体装置。
- 請求項1乃至請求項6のいずれか一において、
前記第1の酸化物半導体膜は、In:Ga:Zn=1:1:1の原子数比の酸化物を含む膜であることを特徴とする半導体装置。 - 請求項1乃至請求項7のいずれか一において、
前記第2の酸化物半導体膜は、In:Ga:Zn=3:1:2の原子数比の酸化物を含む膜であることを特徴とする半導体装置。 - 請求項1乃至請求項8のいずれか一において、
前記酸化物膜は、In:Ga:Zn=1:3:2の原子数比の酸化物を含む膜であることを特徴とする半導体装置。 - 請求項8又は請求項9において、
前記第2の酸化物半導体膜及び前記酸化物膜の結晶部では、前記第2の酸化物半導体膜及び前記酸化物膜の被形成面の法線ベクトルに平行なc軸方向に沿って、前記第2の酸化物半導体膜及び前記酸化物膜に含まれる複数の金属原子及び酸素原子が層状に配列していることを特徴とする半導体装置。
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US20140231803A1 (en) | 2014-08-21 |
KR102035347B1 (ko) | 2019-10-22 |
TW201701474A (zh) | 2017-01-01 |
US8946704B2 (en) | 2015-02-03 |
KR102074104B1 (ko) | 2020-02-05 |
US9812582B2 (en) | 2017-11-07 |
TWI604609B (zh) | 2017-11-01 |
KR20190112703A (ko) | 2019-10-07 |
US20150137122A1 (en) | 2015-05-21 |
JP6068994B2 (ja) | 2017-01-25 |
US20130200365A1 (en) | 2013-08-08 |
US8723176B2 (en) | 2014-05-13 |
US20160099353A1 (en) | 2016-04-07 |
KR20130089595A (ko) | 2013-08-12 |
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TW201338157A (zh) | 2013-09-16 |
US9214566B2 (en) | 2015-12-15 |
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