JP2013016875A - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP2013016875A JP2013016875A JP2012235992A JP2012235992A JP2013016875A JP 2013016875 A JP2013016875 A JP 2013016875A JP 2012235992 A JP2012235992 A JP 2012235992A JP 2012235992 A JP2012235992 A JP 2012235992A JP 2013016875 A JP2013016875 A JP 2013016875A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 333
- 229910052751 metal Inorganic materials 0.000 claims abstract description 319
- 239000002184 metal Substances 0.000 claims abstract description 319
- 239000000758 substrate Substances 0.000 claims abstract description 174
- 230000001681 protective effect Effects 0.000 claims abstract description 53
- 150000004767 nitrides Chemical class 0.000 claims abstract description 30
- 238000005530 etching Methods 0.000 claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 abstract description 55
- 239000006227 byproduct Substances 0.000 abstract description 6
- 230000002265 prevention Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 650
- 238000000034 method Methods 0.000 description 46
- 238000000926 separation method Methods 0.000 description 29
- 150000001875 compounds Chemical class 0.000 description 26
- 229910052594 sapphire Inorganic materials 0.000 description 19
- 239000010980 sapphire Substances 0.000 description 19
- 230000008569 process Effects 0.000 description 13
- 150000002739 metals Chemical class 0.000 description 12
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 11
- 229910002601 GaN Inorganic materials 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 239000007769 metal material Substances 0.000 description 8
- 239000002356 single layer Substances 0.000 description 7
- 238000000605 extraction Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000003491 array Methods 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 230000002829 reductive effect Effects 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 230000036961 partial effect Effects 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 229910001316 Ag alloy Inorganic materials 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910004158 TaO Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
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- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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Abstract
【解決手段】発光装置は、基板と、第1電極と、第1導電型窒化物半導体層と、第1の面に粗面を備えた第2導電型窒化物半導体層と、活性層と、第1導電型窒化物半導体層の一部に接触する反射金属層と、反射金属層の一部を覆う保護金属層と、第1導電型窒化物半導体層の一部と保護金属層の一部とを覆う第1絶縁層と、保護金属層と第1電極と電気的に接続する第1接続金属と、基板と第1導電型窒化物半導体層との間に配置されたボンディング金属と、を備え、第1電極は第2導電型窒化物半導体層の粗面が形成された第1の面と同じ基板の側にある。
【選択図】 図5
Description
127a 活性層
129a 第2導電型下部半導体層
131 第1反射金属層
133 絶縁層
135 保護金属層
137a 第1電極パッド
137b 第2電極パッド
138a 第1電極パッド
138b 第2電極パッド
139 配線
141 中間絶縁層
143 第2反射金属層
145 保護金属層
147 ボンディング金属
149 ボンディング金属
151 基板
LS1、LS2 発光セル
R 粗面
Claims (20)
- 基板と、
第1電極と、
前記基板の上に配置された第1導電型窒化物半導体層と、
前記第1導電型窒化物半導体層の上に配置され、第1の面に粗面を備えた第2導電型窒化物半導体層と、
前記第1導電型窒化物半導体層と前記第2導電型窒化物半導体層との間に配置された活性層と、
前記第1導電型窒化物半導体層と前記基板との間に配置され、前記第1導電型窒化物半導体層の一部に接触する反射金属層と、
前記反射金属層と前記基板との間に配置され、前記反射金属層の一部を覆う保護金属層と、
前記第1導電型窒化物半導体層の一部と前記保護金属層の一部とを覆う第1絶縁層と、
前記保護金属層と前記第1電極と電気的に接続する第1接続金属と、
前記基板と前記第1導電型窒化物半導体層との間に配置されたボンディング金属と、
を備え、
前記第1電極は前記第2導電型窒化物半導体層の粗面が形成された第1の面と同じ前記基板の側にあることを特徴とする発光装置。 - 前記第1絶縁層は前記第2導電型窒化物半導体層の第2の面に接触し、前記第2の面は前記第2導電型窒化物半導体層の前記粗面が形成された第1の面の反対側にあることを特徴とする請求項1に記載の発光装置。
- 前記第1絶縁層は前記第2導電型窒化物半導体層の複数の離隔した第2の面に接触することを特徴とする請求項2に記載の発光装置。
- 複数の前記第2導電型窒化物半導体層に並列に接続される第2接続金属をさらに備えることを特徴とする請求項1に記載の発光装置。
- 前記第1絶縁層は前記活性層の側面を覆うことを特徴とする請求項1に記載の発光装置。
- 前記第1絶縁層は、前記活性層の下に直接配置されない前記基板の一部に配置されることを特徴とする請求項1に記載の発光装置。
- 前記第1接続金属と前記ボンディング金属とは、前記第1導電型窒化物半導体層と前記基板との間の領域を充填することを特徴とする請求項1に記載の発光装置。
- 前記第1絶縁層と前記ボンディング金属との間に配置された第2絶縁層をさらに備えることを特徴とする請求項1に記載の発光装置。
- 前記保護金属層は前記第1絶縁層と前記第2絶縁層との間に配置されることを特徴とする請求項8に記載の発光装置。
- 前記第2絶縁層は、前記活性層の下に直接配置されない前記第1接続金属の一部を覆うことを特徴とする請求項8に記載の発光装置。
- 前記第2導電型窒化物半導体層は、前記粗面が形成された第1の面よりも深いエッチング部を備えることを特徴とする請求項1に記載の発光装置。
- 前記第2導電型窒化物半導体層は、第1の高さを備える第1の光放出構造と、第2の高さを備える第2の光放出構造と、を備えることを特徴とする請求項1に記載の発光装置。
- 前記第2の高さは前記第1の高さより大きいことを特徴とする請求項12に記載の発光装置。
- 前記第2の光放出構造は前記第1絶縁層を露出することを特徴とする請求項12に記載の発光装置。
- 前記基板の上に配置されたメサエッチング構造をさらに備え、前記メサエッチング構造は前記第2導電型窒化物半導体層の前記粗面が形成された第1の面の反対側にあることを特徴とする請求項1に記載の発光装置。
- 前記メサエッチング構造は前記第1絶縁層の上に配置されることを特徴とする請求項15に記載の発光装置。
- 前記第1絶縁層は、前記保護金属層に直接接触する前記第1導電型窒化物半導体層の一部に隣接して配置されることを特徴とする請求項15に記載の発光装置。
- 第1の反射金属層は、前記保護金属層に直接接触する前記第1導電型窒化物半導体層の一部に隣接して配置されることを特徴とする請求項17に記載の発光装置。
- 第2絶縁層をさらに備え、前記保護金属層の一部と前記第1絶縁層とは、前記第2絶縁層の上に配置されることを特徴とする請求項18に記載の発光装置。
- 導電層をさらに備え、前記メサエッチング構造は前記導電層の上に配置されることを特徴とする請求項15に記載の発光装置。
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KR1020080095926A KR101017394B1 (ko) | 2008-09-30 | 2008-09-30 | 발광 소자 및 그것을 제조하는 방법 |
KR10-2008-0095927 | 2008-09-30 | ||
KR20080095927A KR101093117B1 (ko) | 2008-09-30 | 2008-09-30 | 교류용 발광 소자 및 그것을 제조하는 방법 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016046351A (ja) * | 2014-08-21 | 2016-04-04 | 株式会社東芝 | 半導体発光素子 |
WO2017154975A1 (ja) * | 2016-03-08 | 2017-09-14 | 株式会社 東芝 | 半導体発光装置 |
JP2018528598A (ja) * | 2015-06-26 | 2018-09-27 | ソウル セミコンダクター カンパニー リミテッド | マルチセル発光ダイオードを用いたバックライトユニット |
EP3422411A1 (en) | 2017-06-30 | 2019-01-02 | Nichia Corporation | Light emitting device and method of manufacturing same |
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Also Published As
Publication number | Publication date |
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US9431377B2 (en) | 2016-08-30 |
JP2010087515A (ja) | 2010-04-15 |
US20140110729A1 (en) | 2014-04-24 |
US8648369B2 (en) | 2014-02-11 |
JP5719336B2 (ja) | 2015-05-20 |
JP5123269B2 (ja) | 2013-01-23 |
US20140209941A1 (en) | 2014-07-31 |
US20120007109A1 (en) | 2012-01-12 |
US20160343922A1 (en) | 2016-11-24 |
US20110169040A1 (en) | 2011-07-14 |
US9059015B2 (en) | 2015-06-16 |
US9337175B2 (en) | 2016-05-10 |
US8288781B2 (en) | 2012-10-16 |
US20100078656A1 (en) | 2010-04-01 |
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