JP2011107697A - 電子書籍 - Google Patents
電子書籍 Download PDFInfo
- Publication number
- JP2011107697A JP2011107697A JP2010235784A JP2010235784A JP2011107697A JP 2011107697 A JP2011107697 A JP 2011107697A JP 2010235784 A JP2010235784 A JP 2010235784A JP 2010235784 A JP2010235784 A JP 2010235784A JP 2011107697 A JP2011107697 A JP 2011107697A
- Authority
- JP
- Japan
- Prior art keywords
- oxide semiconductor
- film
- insulating film
- electrode
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 377
- 239000010409 thin film Substances 0.000 claims abstract description 217
- 239000010408 film Substances 0.000 claims description 776
- 238000000034 method Methods 0.000 claims description 141
- 239000001257 hydrogen Substances 0.000 claims description 99
- 229910052739 hydrogen Inorganic materials 0.000 claims description 99
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- 239000003990 capacitor Substances 0.000 claims description 59
- 239000002245 particle Substances 0.000 claims description 47
- 238000000151 deposition Methods 0.000 claims description 9
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- 238000001004 secondary ion mass spectrometry Methods 0.000 claims description 2
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- 239000002131 composite material Substances 0.000 description 1
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- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
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- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- IEJIGPNLZYLLBP-UHFFFAOYSA-N dimethyl carbonate Chemical compound COC(=O)OC IEJIGPNLZYLLBP-UHFFFAOYSA-N 0.000 description 1
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- 238000003618 dip coating Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
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- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
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- 239000011229 interlayer Substances 0.000 description 1
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- 229910003002 lithium salt Inorganic materials 0.000 description 1
- 159000000002 lithium salts Chemical class 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000000838 magnetophoresis Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
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- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910052987 metal hydride Inorganic materials 0.000 description 1
- 125000005395 methacrylic acid group Chemical group 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 229910021470 non-graphitizable carbon Inorganic materials 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
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- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/3433—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using light modulating elements actuated by an electric field and being other than liquid crystal devices and electrochromic devices
- G09G3/344—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using light modulating elements actuated by an electric field and being other than liquid crystal devices and electrochromic devices based on particles moving in a fluid or in a gas, e.g. electrophoretic devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
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- G09G2330/021—Power management, e.g. power saving
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Dram (AREA)
Abstract
【解決手段】酸化物半導体中で電子供与体(ドナー)となる不純物を除去することで、真性又は実質的に真性な半導体であって、シリコン半導体よりもエネルギーギャップが大きい酸化物半導体でチャネル形成領域が形成される薄膜トランジスタによって、電子書籍の表示パネルの表示を制御するものである。
【選択図】図2
Description
本実施の形態では、本発明の一形態である電子書籍の構造について、図1を用いて説明する。
本実施の形態は、実施の形態1で開示する表示パネルに適用できる薄膜トランジスタの一形態を示す。本実施の形態で示す薄膜トランジスタ410は、実施の形態1の薄膜トランジスタ106(図2参照。)として用いることができる。
本実施の形態は、実施の形態1で開示する表示パネルに適用できる薄膜トランジスタの他の形態を示す。なお、実施の形態2と同一部分または同様な機能を有する部分、及び工程は、実施の形態2と同様とすればよく、その繰り返しの説明は省略する。また同じ箇所の詳細な説明も省略する。本実施の形態で示す薄膜トランジスタ460は、実施の形態1の薄膜トランジスタ106(図2参照。)として用いることができる。
本実施の形態は、実施の形態1で開示する表示パネルに適用できる薄膜トランジスタの他の形態を示す。なお、実施の形態2と同一部分または同様な機能を有する部分、及び工程は、実施の形態2と同様とすればよく、その繰り返しの説明は省略する。また同じ箇所の詳細な説明も省略する。本実施の形態で示す薄膜トランジスタ425、426は、実施の形態1の薄膜トランジスタ106(図2参照。)として用いることができる。
本実施の形態は、実施の形態1で開示する表示パネルに適用できる薄膜トランジスタの形態を示す。
本実施の形態は、実施の形態1で開示する表示パネルに適用できる薄膜トランジスタの他の形態を示す。本実施の形態で示す薄膜トランジスタ310は、実施の形態1の薄膜トランジスタ106(図2参照。)として用いることができる。
本実施の形態は、実施の形態1で開示する表示パネルに適用できる薄膜トランジスタの他の形態を示す。本実施の形態で示す薄膜トランジスタ360は、実施の形態1の薄膜トランジスタ106(図2参照。)として用いることができる。
本実施の形態は、実施の形態1で開示する表示パネルに適用できる薄膜トランジスタの他の形態を示す。本実施の形態で示す薄膜トランジスタ350は、実施の形態1の薄膜トランジスタ106として用いることができる。
本実施の形態は、実施の形態1で開示する表示パネルに適用できる薄膜トランジスタの他の形態を示す。本実施の形態で示す薄膜トランジスタ380は、実施の形態1の薄膜トランジスタ106(図2参照。)として用いることができる。
本実施の形態では、上記実施の形態で示す電子書籍において、タッチパネル機能を有する電子書籍の形態について、図22を用いて説明する。
本実施の形態では、無線で蓄電装置に充放電が可能な電子書籍について、図23を用いて説明する。
本実施の形態では、可撓性を有する表示パネルを有する電子書籍の形態について、図24を用いて説明する。
本実施の形態では、電子書籍に含まれる電力供給装置37からの電圧を調整し半導体装置に電力を供給できる電圧調整回路の一形態として昇圧回路について説明する。
03 筐体
05 表示部
07 操作キー
09 操作キー
11 第1の基板
29 半導体装置
23 シール材
13 素子層
19 接着材
21 表示媒体
17 第2の電極
15 第2の基板
25 接着材
27 第3の基板
10 表示パネル
33 FPC
35 半導体装置
31 配線基板
37 電力供給装置
102A 第2の配線
103 酸化物半導体膜
106 薄膜トランジスタ
101 第1の配線
102B 第3の配線
105 画素電極
100 画素
104 容量線
123 走査線駆動回路
124 信号線駆動回路
122 画素部
121 画素
120 第1の基板
21 表示媒体
57 白色粒子
51 充填材
53 マイクロカプセル
41 第1の電極
55 黒色粒子
59 分散媒
67 白色粉粒体
61 リブ
63 空間
65 黒色粉粒体
71 充填材
77 白色領域
73 マイクロカプセル
79 液体
75 黒色領域
111 第1の基板
112 下地膜
113 ゲート絶縁膜
114 酸化物絶縁膜
115 平坦化絶縁膜
133 書込み期間
135 非書込み期間
131 画像書き換え期間
137 書込み期間
143 書込み期間
145 非書込み期間
141 画像書き換え期間
147 書込み期間
155 蓄電セル
157 端子部
159 端子部
151 蓄電装置
153 外装部材
171 負極集電体
173 負極活物質
163 負極
167 セパレータ
177 正極活物質
175 正極集電体
165 正極
169 電解質
414a 配線
415a ソース電極またはドレイン電極
411 ゲート電極
412 酸化物半導体膜
415b ソース電極またはドレイン電極
414b 配線
410 薄膜トランジスタ
407 絶縁膜
400 第1の基板
402 ゲート絶縁膜
460 薄膜トランジスタ
465b ソース電極またはドレイン電極
461 ゲート電極
462 酸化物半導体膜
468 配線
452 ゲート絶縁膜
461a ゲート電極
461b ゲート電極
468 配線
464 配線
465a2 ソース電極またはドレイン電極
457 絶縁膜
465a1 ソース電極またはドレイン電極
450 第1の基板
422 絶縁膜
412 酸化物半導体膜
425 薄膜トランジスタ
411 ゲート電極
427 導電膜
424 導電膜
426 薄膜トランジスタ
394 第1の基板
393 酸化物半導体膜
391 ゲート電極
397 ゲート絶縁膜
399 酸化物半導体膜
395a ソース電極
395b ドレイン電極
396 酸化物絶縁膜
390 薄膜トランジスタ
392 酸化物半導体層
398 保護絶縁膜
300 第1の基板
311 ゲート電極
330 酸化物半導体膜
302 ゲート絶縁膜
331 酸化物半導体膜
315a ソース電極
315b ドレイン電極
316 酸化物絶縁膜
310 薄膜トランジスタ
313 チャネル形成領域
312 酸化物半導体膜
303 保護絶縁膜
322 ゲート絶縁膜
361 ゲート電極
332 酸化物半導体膜
320 第1の基板
366 酸化物絶縁膜
362 酸化物半導体膜
365a ソース電極
365b ドレイン電極
323 保護絶縁膜
363 チャネル形成領域
362 酸化物半導体膜
360 薄膜トランジスタ
340 第1の基板
355a ソース電極
351 ゲート電極
342 ゲート絶縁膜
355b ドレイン電極
345 酸化物半導体膜
346 酸化物半導体膜
343 保護絶縁膜
356 酸化物絶縁膜
352 酸化物半導体膜
350 薄膜トランジスタ
385a ソース電極
386 酸化物絶縁膜
373 保護絶縁膜
385b ドレイン電極
372b 第2のゲート絶縁膜
372a 第1のゲート絶縁膜
382 酸化物半導体膜
380 薄膜トランジスタ
381 ゲート電極
370 第1の基板
80 タッチセンサ部
81 第3の電極
83 スペーサ
85 第4の電極
87 第4の基板
90 アンテナ
91 外部電力供給装置
93 アンテナ回路
95 整流回路
97 充電回路
99 安定化電源回路
201 電子書籍
203 綴じ部
205 表示パネル
207 表示パネル
209 表示部
221 信号線
222 クロック信号線
231 薄膜トランジスタ
232 容量素子
Claims (10)
- 二次イオン質量分析法で検出される水素濃度が5×1019/cm3以下であり、キャリア濃度が5×1014/cm3以下である酸化物半導体膜がゲート電極と重畳するように設けられた薄膜トランジスタと、
前記薄膜トランジスタに接続する画素電極と、
前記画素電極に対向する共通電極と、
前記画素電極及び前記共通電極の間に表示媒体を有する表示パネルと、
を有することを特徴とする電子書籍。 - 請求項1において、前記表示パネルは、電気泳動表示パネルであることを特徴とする電子書籍。
- 請求項1において、前記表示パネルは、粒子移動方式であることを特徴とする電子書籍。
- 請求項1において、前記表示パネルは、粒子回転方式であることを特徴とする電子書籍。
- 請求項1において、前記表示パネルは、液晶表示方式であることを特徴とする電子書籍。
- 請求項1において、前記表示パネルは、電解析出方式であることを特徴とする電子書籍。
- 請求項1において、前記表示パネルは、エレクトロクロミック方式であることを特徴とする電子書籍。
- 請求項1において、前記表示パネルは、フィルム移動方式であることを特徴とする電子書籍。
- 請求項1乃至8のいずれか一項において、一次電池、あるいは二次電池またはキャパシタを有することを特徴とする電子書籍。
- 請求項1乃至9のいずれか一項において、前記薄膜トランジスタのオフ電流は、1×10−13A未満であることを特徴とする電子書籍。
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TW201810686A (zh) | 2018-03-16 |
TW201543126A (zh) | 2015-11-16 |
JP6170589B2 (ja) | 2017-07-26 |
US20170221932A1 (en) | 2017-08-03 |
US20200091200A1 (en) | 2020-03-19 |
US20110090186A1 (en) | 2011-04-21 |
TWI505006B (zh) | 2015-10-21 |
TWI645569B (zh) | 2018-12-21 |
JP2024023237A (ja) | 2024-02-21 |
TW201701043A (zh) | 2017-01-01 |
JP6964721B2 (ja) | 2021-11-10 |
US9245484B2 (en) | 2016-01-26 |
US20160118412A1 (en) | 2016-04-28 |
JP2017183757A (ja) | 2017-10-05 |
JP2019165255A (ja) | 2019-09-26 |
JP2020160470A (ja) | 2020-10-01 |
JP6546220B2 (ja) | 2019-07-17 |
JP2022009230A (ja) | 2022-01-14 |
JP5779330B2 (ja) | 2015-09-16 |
TW201207539A (en) | 2012-02-16 |
WO2011048923A1 (en) | 2011-04-28 |
JP2016149570A (ja) | 2016-08-18 |
JP6719624B2 (ja) | 2020-07-08 |
TWI607271B (zh) | 2017-12-01 |
JP2014232325A (ja) | 2014-12-11 |
TWI561907B (en) | 2016-12-11 |
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