JP2010517263A - ダイヤモンド電子デバイス及びそれらの製造方法 - Google Patents

ダイヤモンド電子デバイス及びそれらの製造方法 Download PDF

Info

Publication number
JP2010517263A
JP2010517263A JP2009546062A JP2009546062A JP2010517263A JP 2010517263 A JP2010517263 A JP 2010517263A JP 2009546062 A JP2009546062 A JP 2009546062A JP 2009546062 A JP2009546062 A JP 2009546062A JP 2010517263 A JP2010517263 A JP 2010517263A
Authority
JP
Japan
Prior art keywords
diamond
layer
electronic device
interface
less
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009546062A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010517263A5 (enExample
Inventor
アラン スカーズブルック、ジェフリー
フリエル、イアン
スチュアート バルマー、リチャード
Original Assignee
エレメント シックス リミテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB0701186A external-priority patent/GB0701186D0/en
Priority claimed from GB0705524A external-priority patent/GB0705524D0/en
Priority claimed from GB0713464A external-priority patent/GB0713464D0/en
Application filed by エレメント シックス リミテッド filed Critical エレメント シックス リミテッド
Publication of JP2010517263A publication Critical patent/JP2010517263A/ja
Publication of JP2010517263A5 publication Critical patent/JP2010517263A5/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C01B32/28—After-treatment, e.g. purification, irradiation, separation or recovery
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/274—Diamond only using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/278—Diamond only doping or introduction of a secondary phase in the diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/87—Investigating jewels
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/28—Electrolytic cell components
    • G01N27/30—Electrodes, e.g. test electrodes; Half-cells
    • G01N27/308—Electrodes, e.g. test electrodes; Half-cells at least partially made of carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02376—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02527—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02634—Homoepitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
    • H01L21/041—Making n- or p-doped regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/8303—Diamond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/063—Illuminating optical parts
    • G01N2201/0636—Reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Plasma & Fusion (AREA)
  • Molecular Biology (AREA)
  • Electrochemistry (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Drying Of Semiconductors (AREA)
  • Conductive Materials (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2009546062A 2007-01-22 2008-01-22 ダイヤモンド電子デバイス及びそれらの製造方法 Pending JP2010517263A (ja)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
GB0701186A GB0701186D0 (en) 2007-01-22 2007-01-22 Electronic field effect devices and methods for their manufacture
GB0705524A GB0705524D0 (en) 2007-03-22 2007-03-22 Plasma etching of diamond surfaces
GBGB0705523.9A GB0705523D0 (en) 2007-01-22 2007-03-22 Diamond electronic devices and methods for their manufacture
GBGB0709716.5A GB0709716D0 (en) 2007-01-22 2007-05-21 Diamond electronic devices including a surface and methods for their manufacture
GB0713464A GB0713464D0 (en) 2007-07-11 2007-07-11 High uniformity boron doped diamond material
PCT/IB2008/050219 WO2008090514A2 (en) 2007-01-22 2008-01-22 Diamond electronic devices and methods for their manufacture

Publications (2)

Publication Number Publication Date
JP2010517263A true JP2010517263A (ja) 2010-05-20
JP2010517263A5 JP2010517263A5 (enExample) 2011-01-13

Family

ID=39644161

Family Applications (6)

Application Number Title Priority Date Filing Date
JP2009546062A Pending JP2010517263A (ja) 2007-01-22 2008-01-22 ダイヤモンド電子デバイス及びそれらの製造方法
JP2009546061A Expired - Fee Related JP5725713B2 (ja) 2007-01-22 2008-01-22 表面を含むダイヤモンド電子デバイス及びそれらの製造方法
JP2009546060A Pending JP2010517261A (ja) 2007-01-22 2008-01-22 電子電界効果デバイス及びそれらの製造方法
JP2009546059A Expired - Fee Related JP5341774B2 (ja) 2007-01-22 2008-01-22 ダイヤモンド表面のプラズマエッチング
JP2009546058A Expired - Fee Related JP5373629B2 (ja) 2007-01-22 2008-01-22 高一様性のホウ素ドープト単結晶ダイヤモンド材料
JP2013095241A Active JP5714052B2 (ja) 2007-01-22 2013-04-30 ダイヤモンド表面のプラズマエッチング

Family Applications After (5)

Application Number Title Priority Date Filing Date
JP2009546061A Expired - Fee Related JP5725713B2 (ja) 2007-01-22 2008-01-22 表面を含むダイヤモンド電子デバイス及びそれらの製造方法
JP2009546060A Pending JP2010517261A (ja) 2007-01-22 2008-01-22 電子電界効果デバイス及びそれらの製造方法
JP2009546059A Expired - Fee Related JP5341774B2 (ja) 2007-01-22 2008-01-22 ダイヤモンド表面のプラズマエッチング
JP2009546058A Expired - Fee Related JP5373629B2 (ja) 2007-01-22 2008-01-22 高一様性のホウ素ドープト単結晶ダイヤモンド材料
JP2013095241A Active JP5714052B2 (ja) 2007-01-22 2013-04-30 ダイヤモンド表面のプラズマエッチング

Country Status (4)

Country Link
US (8) US8193538B2 (enExample)
EP (6) EP2108062A2 (enExample)
JP (6) JP2010517263A (enExample)
WO (5) WO2008090513A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014508943A (ja) * 2011-03-18 2014-04-10 エレメント シックス リミテッド ダイヤモンドベース電気化学センサ

Families Citing this family (76)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010517263A (ja) 2007-01-22 2010-05-20 エレメント シックス リミテッド ダイヤモンド電子デバイス及びそれらの製造方法
JP5223201B2 (ja) * 2007-01-29 2013-06-26 日本電気株式会社 電界効果トランジスタ
GB0813490D0 (en) 2008-07-23 2008-08-27 Element Six Ltd Solid state material
GB0813491D0 (en) 2008-07-23 2008-08-27 Element Six Ltd Diamond Material
GB0816769D0 (en) * 2008-09-12 2008-10-22 Warwick Ventures Boron-doped diamond
GB0819001D0 (en) 2008-10-16 2008-11-26 Diamond Detectors Ltd Contacts on diamond
JP5521132B2 (ja) * 2008-10-20 2014-06-11 住友電気工業株式会社 ダイヤモンド電子素子
US20100101010A1 (en) * 2008-10-24 2010-04-29 Watkins Manufacturing Corporation Chlorinator for portable spas
JP2010161330A (ja) * 2008-12-08 2010-07-22 Hitachi Cable Ltd 圧電薄膜素子
US8384129B2 (en) * 2009-06-25 2013-02-26 The United States Of America, As Represented By The Secretary Of The Navy Transistor with enhanced channel charge inducing material layer and threshold voltage control
US8266736B2 (en) * 2009-07-16 2012-09-18 Watkins Manufacturing Corporation Drop-in chlorinator for portable spas
JP5112404B2 (ja) * 2009-09-01 2013-01-09 日本電信電話株式会社 ダイヤモンド電界効果トランジスタ
GB2479587A (en) 2010-04-16 2011-10-19 Diamond Detectors Ltd Diamond microelectrode
FR2959657B1 (fr) * 2010-05-06 2012-06-22 Commissariat Energie Atomique Transducteur de variation temporelle de température, puce électronique incorporant ce transducteur et procédé de fabrication de cette puce
GB201015270D0 (en) * 2010-09-14 2010-10-27 Element Six Ltd Diamond electrodes for electrochemical devices
JP5747245B2 (ja) * 2010-10-14 2015-07-08 国立研究開発法人物質・材料研究機構 電界効果トランジスタ及びその製造方法
GB201021853D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
CN103370765B (zh) * 2010-12-23 2016-09-07 六号元素有限公司 控制合成金刚石材料的掺杂
GB201021860D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for diamond synthesis
GB201021913D0 (en) 2010-12-23 2011-02-02 Element Six Ltd Microwave plasma reactors and substrates for synthetic diamond manufacture
GB201021865D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
GB201021855D0 (en) 2010-12-23 2011-02-02 Element Six Ltd Microwave power delivery system for plasma reactors
GB201021870D0 (en) * 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
EP2511229B1 (de) * 2011-04-12 2017-03-08 GFD Gesellschaft für Diamantprodukte mbH Flankenverstärktes mikromechanisches Bauteil
US8624667B2 (en) * 2011-12-05 2014-01-07 Mitsubishi Electric Research Laboratories, Inc. High electron mobility transistors with multiple channels
JP5759398B2 (ja) * 2012-02-21 2015-08-05 日本電信電話株式会社 ダイヤモンド電界効果トランジスタ及びその作成方法
GB201204388D0 (en) * 2012-03-13 2012-04-25 Element Six Ltd Synthetic diamond materials for electrochemical sensing applications
US9359213B2 (en) * 2012-06-11 2016-06-07 The Board Of Regents Of The Nevada System Of Higher Education On Behalf Of The University Of Nevada, Las Vegas Plasma treatment to strengthen diamonds
US10041971B2 (en) * 2012-08-22 2018-08-07 President And Fellows Of Harvard College Nanoscale scanning sensors
WO2014040650A1 (en) 2012-09-17 2014-03-20 Element Six Limited Diamond microelectrode
GB201310212D0 (en) 2013-06-07 2013-07-24 Element Six Ltd Post-synthesis processing of diamond and related super-hard materials
GB201322837D0 (en) 2013-12-23 2014-02-12 Element Six Ltd Polycrystalline chemical vapour deposited diamond tool parts and methods of fabricating mounting and using the same
US10697058B2 (en) * 2014-07-22 2020-06-30 Sumitomo Electric Industries, Ltd. Single-crystal diamond, method of producing same, tool including single-crystal diamond, and component including single-crystal diamond
CN104233216B (zh) * 2014-10-09 2016-04-20 南京航空航天大学 一种表面具有纳米结构阵列钛基掺硼金刚石电极的制备方法
HUE065423T2 (hu) 2015-12-16 2024-05-28 6K Inc Eljárás szferoidális dehidrogénezett titánötvözet részecskék elõállítására
US10987735B2 (en) 2015-12-16 2021-04-27 6K Inc. Spheroidal titanium metallic powders with custom microstructures
KR102496037B1 (ko) 2016-01-20 2023-02-06 삼성전자주식회사 플라즈마 식각 방법 및 장치
US9922791B2 (en) 2016-05-05 2018-03-20 Arizona Board Of Regents On Behalf Of Arizona State University Phosphorus doped diamond electrode with tunable low work function for emitter and collector applications
US10704160B2 (en) 2016-05-10 2020-07-07 Arizona Board Of Regents On Behalf Of Arizona State University Sample stage/holder for improved thermal and gas flow control at elevated growth temperatures
US10121657B2 (en) 2016-05-10 2018-11-06 Arizona Board Of Regents On Behalf Of Arizona State University Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation
JP7161158B2 (ja) * 2016-07-14 2022-10-26 アダマンド並木精密宝石株式会社 ダイヤモンド基板層の製造方法
JP6201025B1 (ja) * 2016-10-14 2017-09-20 住友化学株式会社 偏光子、偏光板及び画像表示装置
US10418475B2 (en) 2016-11-28 2019-09-17 Arizona Board Of Regents On Behalf Of Arizona State University Diamond based current aperture vertical transistor and methods of making and using the same
US11183390B2 (en) * 2017-08-15 2021-11-23 Nokomis, Inc. Method of enhancing a DLC coated surface for enhanced multipaction resistance
JP6755223B2 (ja) * 2017-08-25 2020-09-16 住友化学株式会社 偏光子、偏光板及び画像表示装置
CN107731915B (zh) * 2017-10-12 2024-01-30 中国电子科技集团公司第十三研究所 半导体器件及利用突变异质结形成金刚石p型导电沟道的方法
DE102018208692A1 (de) 2018-06-01 2019-12-05 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung homoepitaktischer Diamantschichten
CA3104080A1 (en) 2018-06-19 2019-12-26 6K Inc. Process for producing spheroidized powder from feedstock materials
EP3830321A1 (en) * 2018-07-27 2021-06-09 Ecole Polytechnique Federale De Lausanne (Epfl) Non-contact polishing of a crystalline layer or substrate by ion beam etching
GB2582942A (en) * 2019-04-09 2020-10-14 Element Six Uk Ltd Boron doped synthetic diamond material
EP3962678A4 (en) 2019-04-30 2023-01-11 6K Inc. MECHANICALLY ALLOYED POWDER STARTING MATERIAL
US20220254633A1 (en) * 2019-05-16 2022-08-11 Nippon Telegraph And Telephone Corporation Semiconductor Layered Structure
KR102272513B1 (ko) * 2019-08-22 2021-07-05 한국산업기술대학교산학협력단 분극에 의한 계면의 고이동도 이차원 전하를 형성하는 방법 및 다이아몬드­반도체 접합 소자
US11315951B2 (en) * 2019-11-11 2022-04-26 Electronics And Telecommunications Research Institute Semiconductor device and method of fabricating the same
JP2023512391A (ja) 2019-11-18 2023-03-27 シックスケー インコーポレイテッド 球形粉体用の特異な供給原料及び製造方法
US11590568B2 (en) 2019-12-19 2023-02-28 6K Inc. Process for producing spheroidized powder from feedstock materials
CN111647874B (zh) * 2020-05-11 2022-06-21 南京岱蒙特科技有限公司 一种陶瓷衬底的高比表面积硼掺杂金刚石电极及其制备方法和应用
CN111646633B (zh) * 2020-05-11 2022-11-04 南京岱蒙特科技有限公司 一种高效节能三维电极有机水处理系统及其处理水的方法
CN111681958A (zh) * 2020-05-29 2020-09-18 华南理工大学 一种新型异质结构镁扩散制备常关型hemt器件的方法
US20230197533A1 (en) * 2020-06-01 2023-06-22 Shin-Etsu Handotai Co., Ltd. Method for evaluating peripheral strain of wafer
KR20230029836A (ko) 2020-06-25 2023-03-03 6케이 인크. 마이크로복합 합금 구조
US11594416B2 (en) * 2020-08-31 2023-02-28 Applied Materials, Inc. Tribological properties of diamond films
CN116547068A (zh) 2020-09-24 2023-08-04 6K有限公司 用于启动等离子体的系统、装置及方法
EP4237174A1 (en) 2020-10-30 2023-09-06 6K Inc. Systems and methods for synthesis of spheroidized metal powders
CN112795945B (zh) * 2020-12-10 2022-03-08 深圳先进技术研究院 高臭氧催化活性金刚石电极及其制备方法和应用
WO2022150828A1 (en) 2021-01-11 2022-07-14 6K Inc. Methods and systems for reclamation of li-ion cathode materials using microwave plasma processing
KR20230164699A (ko) 2021-03-31 2023-12-04 6케이 인크. 질화금속 세라믹의 적층 제조를 위한 시스템 및 방법
US12261023B2 (en) 2022-05-23 2025-03-25 6K Inc. Microwave plasma apparatus and methods for processing materials using an interior liner
US12040162B2 (en) 2022-06-09 2024-07-16 6K Inc. Plasma apparatus and methods for processing feed material utilizing an upstream swirl module and composite gas flows
WO2024044498A1 (en) 2022-08-25 2024-02-29 6K Inc. Plasma apparatus and methods for processing feed material utilizing a powder ingress preventor (pip)
US12195338B2 (en) 2022-12-15 2025-01-14 6K Inc. Systems, methods, and device for pyrolysis of methane in a microwave plasma for hydrogen and structured carbon powder production
GB202219497D0 (en) 2022-12-22 2023-02-08 Element Six Tech Ltd Single crystal diamond
US12487182B2 (en) * 2023-05-08 2025-12-02 Tokyo Electron Limited Non-intrusive method for 2D/3D mapping plasma parameters
GB202404485D0 (en) 2024-03-05 2024-05-15 Element Six Tech Ltd Erbium doped single crystal diamond
WO2025186298A1 (en) 2024-03-05 2025-09-12 Element Six Technologies Limited Erbium doped single crystal diamond
CN118773573B (zh) * 2024-09-12 2024-11-29 北京寰宇晶科科技有限公司 一种导电金刚石电极及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005175278A (ja) * 2003-12-12 2005-06-30 Kobe Steel Ltd ダイヤモンド半導体素子及びその製造方法
JP2006508881A (ja) * 2002-09-20 2006-03-16 エレメント シックス リミテッド 単結晶ダイヤモンド
WO2006061707A2 (en) * 2004-12-09 2006-06-15 Element Six Technologies (Pty) Ltd A method of improving the crystalline perfection of diamond crystals
WO2006117621A1 (en) * 2005-04-29 2006-11-09 Element Six Limited Diamond transistor and method of manufacture thereof
JP2006315942A (ja) * 2005-04-15 2006-11-24 Sumitomo Electric Ind Ltd 単結晶ダイヤモンドおよびその製造方法

Family Cites Families (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60246627A (ja) 1984-05-21 1985-12-06 Sumitomo Electric Ind Ltd ダイヤモンド半導体素子
JP2542608B2 (ja) 1987-03-09 1996-10-09 住友電気工業株式会社 ダイヤモンド半導体のエツチング方法
GB8812216D0 (en) 1988-05-24 1988-06-29 Jones B L Diamond transistor method of manufacture thereof
JP2633968B2 (ja) * 1989-12-30 1997-07-23 キヤノン株式会社 ダイヤモンド被覆材及びその製造法
JPH03205339A (ja) 1989-12-30 1991-09-06 Kawasaki Refract Co Ltd 炭素含有耐火物
JP2913765B2 (ja) 1990-05-21 1999-06-28 住友電気工業株式会社 シヨツトキー接合の形成法
JPH04240725A (ja) 1991-01-24 1992-08-28 Sumitomo Electric Ind Ltd エッチング方法
US5173761A (en) 1991-01-28 1992-12-22 Kobe Steel Usa Inc., Electronic Materials Center Semiconducting polycrystalline diamond electronic devices employing an insulating diamond layer
JPH05139889A (ja) * 1991-11-21 1993-06-08 Canon Inc ダイヤモンド結晶
JPH05299635A (ja) * 1992-04-23 1993-11-12 Kobe Steel Ltd 耐熱性オーミック電極を備えたダイヤモンド薄膜及びその製造方法
US5276338A (en) 1992-05-15 1994-01-04 International Business Machines Corporation Bonded wafer structure having a buried insulation layer
US5500077A (en) * 1993-03-10 1996-03-19 Sumitomo Electric Industries, Ltd. Method of polishing/flattening diamond
JPH0786311A (ja) 1993-05-14 1995-03-31 Kobe Steel Ltd 高配向性ダイヤモンド薄膜電界効果トランジスタ
US5371383A (en) * 1993-05-14 1994-12-06 Kobe Steel Usa Inc. Highly oriented diamond film field-effect transistor
GB2281254B (en) 1993-08-23 1996-11-27 Northern Telecom Ltd Polishing polycrystalline films
US5609926A (en) * 1994-03-21 1997-03-11 Prins; Johan F. Diamond doping
JP3309887B2 (ja) 1994-08-17 2002-07-29 住友電気工業株式会社 半導体装置
US5814194A (en) * 1994-10-20 1998-09-29 Matsushita Electric Industrial Co., Ltd Substrate surface treatment method
US5711698A (en) 1995-05-05 1998-01-27 Saint-Gobain/Norton Industrial Ceramics Corp Method of synthetic diamond ablation with an oxygen plasma and synthetic diamonds etched accordingly
US5803967A (en) * 1995-05-31 1998-09-08 Kobe Steel Usa Inc. Method of forming diamond devices having textured and highly oriented diamond layers therein
JPH111399A (ja) * 1996-12-05 1999-01-06 Lg Electron Inc 窒化ガリウム半導体単結晶基板の製造方法並びにその基板を用いた窒化ガリウムダイオード
US6013191A (en) * 1997-10-27 2000-01-11 Advanced Refractory Technologies, Inc. Method of polishing CVD diamond films by oxygen plasma
US6582513B1 (en) * 1998-05-15 2003-06-24 Apollo Diamond, Inc. System and method for producing synthetic diamond
US6074888A (en) 1998-08-18 2000-06-13 Trw Inc. Method for fabricating semiconductor micro epi-optical components
DE19842396A1 (de) 1998-09-16 2000-04-13 Fraunhofer Ges Forschung Elektrode für elektrochemische Prozesse
KR100305660B1 (ko) * 1999-02-09 2001-09-26 김희용 이중이온빔법을 이용하여 ＣｕＯ를 첨가한 황화합물계 가스 센서
US6508911B1 (en) * 1999-08-16 2003-01-21 Applied Materials Inc. Diamond coated parts in a plasma reactor
US8696875B2 (en) * 1999-10-08 2014-04-15 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US6605352B1 (en) 2000-01-06 2003-08-12 Saint-Gobain Ceramics & Plastics, Inc. Corrosion and erosion resistant thin film diamond coating and applications therefor
US6652763B1 (en) 2000-04-03 2003-11-25 Hrl Laboratories, Llc Method and apparatus for large-scale diamond polishing
AU2001274368B2 (en) 2000-06-15 2004-10-28 Element Six (Pty) Ltd Single crystal diamond prepared by cvd
CZ302229B6 (cs) * 2000-06-15 2011-01-05 Element Six (Pty) Ltd Silná monokrystalová diamantová vrstva, zpusob jejího zhotovení a drahokamy vyrábené z této vrstvy
JP2002057167A (ja) 2000-08-10 2002-02-22 Kobe Steel Ltd 半導体素子及びその製造方法
JP3908898B2 (ja) 2000-08-25 2007-04-25 株式会社神戸製鋼所 炭素系材料のエッチング方法
JP2002118257A (ja) * 2000-10-06 2002-04-19 Kobe Steel Ltd ダイヤモンド半導体装置
US7132309B2 (en) * 2003-04-22 2006-11-07 Chien-Min Sung Semiconductor-on-diamond devices and methods of forming
JP2002226290A (ja) * 2000-11-29 2002-08-14 Japan Fine Ceramics Center ダイヤモンド加工体の製造方法、及び、ダイヤモンド加工体
JP3681340B2 (ja) * 2001-04-25 2005-08-10 日本電信電話株式会社 電子素子
EP2189555A2 (en) 2001-08-08 2010-05-26 Apollo Diamond, Inc. System and method for producing synthetic diamond
TW525863U (en) * 2001-10-24 2003-03-21 Polytronics Technology Corp Electric current overflow protection device
GB0130005D0 (en) * 2001-12-14 2002-02-06 Diamanx Products Ltd Boron doped diamond
WO2003058204A2 (en) * 2002-01-03 2003-07-17 Advanced Research And Technology Institute, Inc. Simultaneous acquisation of chemical information
JP2003347580A (ja) 2002-05-28 2003-12-05 Tokyo Gas Co Ltd ダイヤモンド紫外線発光素子
KR100933847B1 (ko) 2002-06-18 2009-12-24 스미토모덴키고교가부시키가이샤 ｎ형 반도체 다이아몬드 제조 방법 및 반도체 다이아몬드
GB0227261D0 (en) * 2002-11-21 2002-12-31 Element Six Ltd Optical quality diamond material
JP2004292172A (ja) * 2003-02-04 2004-10-21 Mitsubishi Materials Corp ダイヤモンド単結晶基材及びその製造方法
JP4076889B2 (ja) * 2003-03-26 2008-04-16 Ｔｄｋ株式会社 磁気記録媒体の製造方法
US7481879B2 (en) 2004-01-16 2009-01-27 Sumitomo Electric Industries, Ltd. Diamond single crystal substrate manufacturing method and diamond single crystal substrate
JP4525897B2 (ja) 2004-03-22 2010-08-18 住友電気工業株式会社 ダイヤモンド単結晶基板
US7033912B2 (en) 2004-01-22 2006-04-25 Cree, Inc. Silicon carbide on diamond substrates and related devices and methods
EP1571241A1 (en) 2004-03-01 2005-09-07 S.O.I.T.E.C. Silicon on Insulator Technologies Method of manufacturing a wafer
KR20070041540A (ko) * 2004-06-30 2007-04-18 니폰 제온 가부시키가이샤 전자파 차폐성 그리드 편광자 및 그 제조방법, 및 그리드편광자의 제조방법
WO2006013430A1 (en) 2004-07-27 2006-02-09 Element Six Limited Diamond electrodes
JP4487035B2 (ja) 2004-09-10 2010-06-23 凸版印刷株式会社 ダイヤモンド膜のパターン形成方法
JP4911743B2 (ja) * 2004-09-10 2012-04-04 独立行政法人物質・材料研究機構 電気化学素子及びその製造方法
US20090185875A1 (en) * 2004-09-23 2009-07-23 Cemecon Ag Machining Tool and Method For The Production Thereof
US7455883B2 (en) 2004-10-19 2008-11-25 Guardian Industries Corp. Hydrophilic DLC on substrate with flame pyrolysis treatment
WO2006076354A2 (en) * 2005-01-11 2006-07-20 Apollo Diamond, Inc. Diamond medical devices
JP4582542B2 (ja) 2005-02-02 2010-11-17 株式会社神戸製鋼所 ダイヤモンド電界効果トランジスタ及びその製造方法
JP2006269534A (ja) * 2005-03-22 2006-10-05 Eudyna Devices Inc 半導体装置及びその製造方法、その半導体装置製造用基板及びその製造方法並びにその半導体成長用基板
WO2006114999A1 (ja) * 2005-04-18 2006-11-02 Kyoto University 化合物半導体装置及び化合物半導体製造方法
JP2006324465A (ja) * 2005-05-19 2006-11-30 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
RU2473720C2 (ru) 2005-06-22 2013-01-27 Элемент Сикс Лимитед Бесцветный монокристаллический алмаз и способ его получения
JP4500745B2 (ja) * 2005-08-03 2010-07-14 ペルメレック電極株式会社 電解用電極の製造方法
KR100779078B1 (ko) * 2005-12-09 2007-11-27 한국전자통신연구원 빛의 방출 효율을 향상시킬 수 있는 실리콘 발광 소자 및그 제조방법
JP5323492B2 (ja) 2005-12-09 2013-10-23 エレメント シックス テクノロジーズ （プロプライアタリー） リミテッド 高結晶品質の合成ダイヤモンド
US7557378B2 (en) * 2006-11-08 2009-07-07 Raytheon Company Boron aluminum nitride diamond heterostructure
GB0700984D0 (en) * 2007-01-18 2007-02-28 Element Six Ltd Polycrystalline diamond elements having convex surfaces
JP2010517263A (ja) 2007-01-22 2010-05-20 エレメント シックス リミテッド ダイヤモンド電子デバイス及びそれらの製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006508881A (ja) * 2002-09-20 2006-03-16 エレメント シックス リミテッド 単結晶ダイヤモンド
JP2005175278A (ja) * 2003-12-12 2005-06-30 Kobe Steel Ltd ダイヤモンド半導体素子及びその製造方法
WO2006061707A2 (en) * 2004-12-09 2006-06-15 Element Six Technologies (Pty) Ltd A method of improving the crystalline perfection of diamond crystals
JP2006315942A (ja) * 2005-04-15 2006-11-24 Sumitomo Electric Ind Ltd 単結晶ダイヤモンドおよびその製造方法
WO2006117621A1 (en) * 2005-04-29 2006-11-09 Element Six Limited Diamond transistor and method of manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014508943A (ja) * 2011-03-18 2014-04-10 エレメント シックス リミテッド ダイヤモンドベース電気化学センサ

Also Published As

Publication number Publication date
JP2010516601A (ja) 2010-05-20
US10011491B2 (en) 2018-07-03
EP2719794A3 (en) 2014-07-09
WO2008090513A3 (en) 2009-08-13
JP5341774B2 (ja) 2013-11-13
WO2008090511A1 (en) 2008-07-31
EP2118335A1 (en) 2009-11-18
WO2008090510A1 (en) 2008-07-31
US20120241763A1 (en) 2012-09-27
US9034200B2 (en) 2015-05-19
JP2010516600A (ja) 2010-05-20
US20100078651A1 (en) 2010-04-01
US8277622B2 (en) 2012-10-02
EP2108195A1 (en) 2009-10-14
EP2108063A2 (en) 2009-10-14
WO2008090512A1 (en) 2008-07-31
EP2108195B1 (en) 2015-09-23
JP2010517261A (ja) 2010-05-20
JP5714052B2 (ja) 2015-05-07
US20100047519A1 (en) 2010-02-25
JP2010517262A (ja) 2010-05-20
EP2108054B1 (en) 2013-10-02
US20100078652A1 (en) 2010-04-01
EP2719794B1 (en) 2018-08-22
US20100038653A1 (en) 2010-02-18
US8362492B2 (en) 2013-01-29
US8648354B2 (en) 2014-02-11
JP2013211562A (ja) 2013-10-10
US8193538B2 (en) 2012-06-05
WO2008090514A3 (en) 2009-08-13
WO2008090514A2 (en) 2008-07-31
JP5373629B2 (ja) 2013-12-18
WO2008090513A2 (en) 2008-07-31
EP2108054A1 (en) 2009-10-14
US20150266741A1 (en) 2015-09-24
EP2108062A2 (en) 2009-10-14
EP2719794A2 (en) 2014-04-16
JP5725713B2 (ja) 2015-05-27
US20100012491A1 (en) 2010-01-21
US20130126909A1 (en) 2013-05-23

Similar Documents

Publication Publication Date Title
JP2010517263A (ja) ダイヤモンド電子デバイス及びそれらの製造方法
JP6067801B2 (ja) 高品質ホモエピタキシ用微傾斜窒化ガリウム基板
JP5717518B2 (ja) 単結晶ダイヤモンド
JP5607781B2 (ja) 大面積で均一な低転位密度ＧａＮ基板およびその製造プロセス
US6869480B1 (en) Method for the production of nanometer scale step height reference specimens
US7981721B2 (en) Diamond transistor and method of manufacture thereof
JP6631517B2 (ja) ダイヤモンド基板、及び、ダイヤモンド複合基板
WO2013035691A1 (ja) ＳｉＣエピタキシャルウェハ及びその製造方法
KR101082656B1 (ko) 다이아몬드 단결정 기판 제조 방법 및 다이아몬드 단결정기판
JP2009218575A (ja) 半導体基板の製造方法
JP4184441B2 (ja) ＧａＮ及びＧａ▲下１−ｘ−ｙ▼Ａｌ▲下ｘ▼Ｉｎ▲下ｙ▼Ｎの結晶及びエピタキシャル層の機械−化学研摩
TWI875904B (zh) Ｉｉｉ族氮化物單晶基板及其製造方法
KR20210060357A (ko) 다이아몬드 기판 및 그의 제조방법
TWI852913B (zh) 單結晶鑽石
Bondokov et al. Fabrication and characterization of 2-inch diameter AlN single-crystal wafers cut from bulk crystals
JP7487702B2 (ja) 単結晶ダイヤモンド基板の製造方法
CN111279461A (zh) 由单晶硅组成的半导体晶片
TW202511525A (zh) 鑽石基板及鑽石基板的製造方法
GB2623076A (en) CVD diamond product
KR20240145997A (ko) 실리콘 기판 상에의 다이아몬드 성장방법, 및 실리콘 기판 상에의 선택적 다이아몬드 성장방법
JP2007204307A (ja) ダイヤモンドの合成方法
JPH088184A (ja) 半導体素子の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101115

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20101115

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20120814

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20120814

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130326

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20130620

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20130627

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130926

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20130926

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140304

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20140603

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20140610

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140903

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150303

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20150603

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20150702

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20150803

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20151030