JP2007529762A5 - - Google Patents
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- Publication number
- JP2007529762A5 JP2007529762A5 JP2006544290A JP2006544290A JP2007529762A5 JP 2007529762 A5 JP2007529762 A5 JP 2007529762A5 JP 2006544290 A JP2006544290 A JP 2006544290A JP 2006544290 A JP2006544290 A JP 2006544290A JP 2007529762 A5 JP2007529762 A5 JP 2007529762A5
- Authority
- JP
- Japan
- Prior art keywords
- objective lens
- projection
- lens
- microlithography
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 claims 11
- 239000013078 crystal Substances 0.000 claims 7
- 238000001393 microlithography Methods 0.000 claims 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 4
- 229910052594 sapphire Inorganic materials 0.000 claims 3
- 239000010980 sapphire Substances 0.000 claims 3
- 229910017768 LaF 3 Inorganic materials 0.000 claims 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 239000002178 crystalline material Substances 0.000 claims 1
- 210000001747 pupil Anatomy 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US53062303P | 2003-12-19 | 2003-12-19 | |
| US60/530,623 | 2003-12-19 | ||
| US56800604P | 2004-05-04 | 2004-05-04 | |
| US60/568,006 | 2004-05-04 | ||
| PCT/EP2004/014100 WO2005059645A2 (en) | 2003-12-19 | 2004-12-10 | Microlithography projection objective with crystal elements |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007529762A JP2007529762A (ja) | 2007-10-25 |
| JP2007529762A5 true JP2007529762A5 (enExample) | 2008-02-07 |
| JP5102492B2 JP5102492B2 (ja) | 2012-12-19 |
Family
ID=34704297
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006544290A Expired - Fee Related JP5102492B2 (ja) | 2003-12-19 | 2004-12-10 | 結晶素子を有するマイクロリソグラフィー投影用対物レンズ |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7755839B2 (enExample) |
| JP (1) | JP5102492B2 (enExample) |
| WO (2) | WO2005059645A2 (enExample) |
Families Citing this family (165)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW538256B (en) * | 2000-01-14 | 2003-06-21 | Zeiss Stiftung | Microlithographic reduction projection catadioptric objective |
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| TW201738932A (zh) | 2003-10-09 | 2017-11-01 | Nippon Kogaku Kk | 曝光裝置及曝光方法、元件製造方法 |
| US7411653B2 (en) | 2003-10-28 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus |
| JP4295712B2 (ja) | 2003-11-14 | 2009-07-15 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置及び装置製造方法 |
| TWI605315B (zh) | 2003-12-03 | 2017-11-11 | Nippon Kogaku Kk | Exposure device, exposure method, and device manufacturing method |
| US7385764B2 (en) | 2003-12-15 | 2008-06-10 | Carl Zeiss Smt Ag | Objectives as a microlithography projection objective with at least one liquid lens |
| JP4720506B2 (ja) | 2003-12-15 | 2011-07-13 | 株式会社ニコン | ステージ装置、露光装置、及び露光方法 |
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| KR101150037B1 (ko) * | 2004-01-14 | 2012-07-02 | 칼 짜이스 에스엠티 게엠베하 | 반사굴절식 투영 대물렌즈 |
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| CN101263432B (zh) | 2005-09-14 | 2011-07-27 | 卡尔蔡司Smt有限责任公司 | 微光刻曝光系统的光学系统 |
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| JP2007165869A (ja) | 2005-11-21 | 2007-06-28 | Nikon Corp | 露光方法及びそれを用いたデバイス製造方法、露光装置、並びに基板処理方法及び装置 |
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| KR20080101865A (ko) | 2006-02-16 | 2008-11-21 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
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| KR101486086B1 (ko) | 2006-05-10 | 2015-01-23 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| KR20090018024A (ko) | 2006-05-18 | 2009-02-19 | 가부시키가이샤 니콘 | 노광 방법 및 장치, 메인터넌스 방법, 그리고 디바이스 제조 방법 |
| KR20090023335A (ko) | 2006-05-22 | 2009-03-04 | 가부시키가이샤 니콘 | 노광 방법 및 장치, 메인터넌스 방법, 그리고 디바이스 제조 방법 |
| KR20090023331A (ko) | 2006-05-23 | 2009-03-04 | 가부시키가이샤 니콘 | 메인터넌스 방법, 노광 방법 및 장치, 그리고 디바이스 제조 방법 |
| JP5218049B2 (ja) | 2006-05-31 | 2013-06-26 | 株式会社ニコン | 露光装置及び露光方法 |
| KR101379096B1 (ko) * | 2006-06-16 | 2014-03-28 | 칼 짜이스 에스엠티 게엠베하 | 마이크로 리소그라피 투사 노광 장치의 투사 대물렌즈 |
| KR101236043B1 (ko) | 2006-07-14 | 2013-02-21 | 가부시키가이샤 니콘 | 스테이지 장치, 노광 장치 및 디바이스 제조 방법 |
| WO2008026593A1 (en) | 2006-08-30 | 2008-03-06 | Nikon Corporation | Exposure apparatus, device production method, cleaning method, and cleaning member |
| US7972438B2 (en) * | 2006-08-30 | 2011-07-05 | Crystal Photonics, Incorporated | High-index UV optical materials for immersion lithography |
| WO2008029917A1 (en) | 2006-09-08 | 2008-03-13 | Nikon Corporation | Mask, exposure apparatus and device manufacturing method |
| JP5029611B2 (ja) | 2006-09-08 | 2012-09-19 | 株式会社ニコン | クリーニング用部材、クリーニング方法、露光装置、並びにデバイス製造方法 |
| US7872730B2 (en) | 2006-09-15 | 2011-01-18 | Nikon Corporation | Immersion exposure apparatus and immersion exposure method, and device manufacturing method |
| US7557997B2 (en) | 2006-09-28 | 2009-07-07 | Nikon Corporation | Immersion objective optical system, exposure apparatus, device fabrication method, and boundary optical element |
| WO2008044612A1 (en) | 2006-09-29 | 2008-04-17 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
| US8023104B2 (en) | 2007-01-22 | 2011-09-20 | Carl Zeiss Smt Gmbh | Microlithographic projection exposure apparatus |
| US8004651B2 (en) | 2007-01-23 | 2011-08-23 | Nikon Corporation | Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method |
| JP2008216498A (ja) * | 2007-03-01 | 2008-09-18 | Canon Inc | 投影光学系、露光装置及びデバイス製造方法 |
| US8237911B2 (en) | 2007-03-15 | 2012-08-07 | Nikon Corporation | Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine |
| US8134685B2 (en) | 2007-03-23 | 2012-03-13 | Nikon Corporation | Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method |
| KR20100031694A (ko) | 2007-05-28 | 2010-03-24 | 가부시키가이샤 니콘 | 노광 장치, 디바이스 제조 방법, 세정 장치, 및 클리닝 방법 그리고 노광 방법 |
| DE102008001761A1 (de) | 2007-06-06 | 2008-12-11 | Carl Zeiss Smt Ag | Projektionsobjektiv einer mikrolithographischen Projektionsbelichtungsanlage |
| US8194232B2 (en) | 2007-07-24 | 2012-06-05 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, position control method and position control system, and device manufacturing method |
| TWI475336B (zh) | 2007-07-24 | 2015-03-01 | 尼康股份有限公司 | Mobile body driving method and moving body driving system, pattern forming method and apparatus, exposure method and apparatus, and component manufacturing method |
| US8547527B2 (en) | 2007-07-24 | 2013-10-01 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and pattern formation apparatus, and device manufacturing method |
| US9304412B2 (en) | 2007-08-24 | 2016-04-05 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and measuring method |
| US8023106B2 (en) | 2007-08-24 | 2011-09-20 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method |
| US8867022B2 (en) | 2007-08-24 | 2014-10-21 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, and device manufacturing method |
| US8237919B2 (en) | 2007-08-24 | 2012-08-07 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method for continuous position measurement of movable body before and after switching between sensor heads |
| US8218129B2 (en) | 2007-08-24 | 2012-07-10 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, measuring method, and position measurement system |
| JP5498385B2 (ja) * | 2007-10-02 | 2014-05-21 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ用の投影対物系 |
| US8279399B2 (en) | 2007-10-22 | 2012-10-02 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
| US9013681B2 (en) | 2007-11-06 | 2015-04-21 | Nikon Corporation | Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method |
| JP4986185B2 (ja) | 2007-11-07 | 2012-07-25 | 株式会社ニコン | 露光装置及び露光方法、並びにデバイス製造方法 |
| US9256140B2 (en) | 2007-11-07 | 2016-02-09 | Nikon Corporation | Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method with measurement device to measure movable body in Z direction |
| US8665455B2 (en) | 2007-11-08 | 2014-03-04 | Nikon Corporation | Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method |
| US8422015B2 (en) | 2007-11-09 | 2013-04-16 | Nikon Corporation | Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method |
| US8711327B2 (en) | 2007-12-14 | 2014-04-29 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
| CN102566320B (zh) | 2007-12-28 | 2015-01-28 | 株式会社尼康 | 曝光装置、曝光方法以及器件制造方法 |
| JP5097166B2 (ja) | 2008-05-28 | 2012-12-12 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置及び装置の動作方法 |
| TWI434142B (zh) * | 2008-07-25 | 2014-04-11 | Nanya Technology Corp | 具有光纖模組的微影裝置 |
| EP2381310B1 (en) | 2010-04-22 | 2015-05-06 | ASML Netherlands BV | Fluid handling structure and lithographic apparatus |
| US12253804B2 (en) * | 2021-12-13 | 2025-03-18 | Changxin Memory Technologies, Inc. | Method of forming photoresist pattern and projection exposure apparatus |
Family Cites Families (165)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2380887A (en) * | 1941-05-22 | 1945-07-31 | Taylor Taylor & Hobson Ltd | Optical system |
| NL269391A (enExample) * | 1961-09-19 | |||
| JPS6019484B2 (ja) * | 1975-11-07 | 1985-05-16 | キヤノン株式会社 | 複写用レンズ |
| US4293186A (en) | 1977-02-11 | 1981-10-06 | The Perkin-Elmer Corporation | Restricted off-axis field optical system |
| CH624776A5 (enExample) | 1977-12-08 | 1981-08-14 | Kern & Co Ag | |
| US4241390A (en) | 1978-02-06 | 1980-12-23 | The Perkin-Elmer Corporation | System for illuminating an annular field |
| CH651943A5 (de) * | 1980-08-16 | 1985-10-15 | Ludvik Dr Canzek | Katadioptrisches objektiv hoher oeffnung. |
| JPS5744115A (en) * | 1980-08-30 | 1982-03-12 | Asahi Optical Co Ltd | Reflex telephoto zoom lens system |
| US4346164A (en) * | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
| GB2148017B (en) | 1981-05-15 | 1986-04-09 | Gen Signal Corp | Apparatus for projecting a series of images onto dies of a semiconductor wafer |
| US4469414A (en) * | 1982-06-01 | 1984-09-04 | The Perkin-Elmer Corporation | Restrictive off-axis field optical system |
| JPS60184223A (ja) * | 1984-03-01 | 1985-09-19 | Nippon Kogaku Kk <Nikon> | 反射屈折式望遠レンズ |
| US4812028A (en) * | 1984-07-23 | 1989-03-14 | Nikon Corporation | Reflection type reduction projection optical system |
| US4834515A (en) * | 1984-11-29 | 1989-05-30 | Lockheed Missiles & Space Company, Inc. | Catadioptric imaging system with dioptric assembly of the petzval type |
| US4779966A (en) | 1984-12-21 | 1988-10-25 | The Perkin-Elmer Corporation | Single mirror projection optical system |
| JPS61156737A (ja) * | 1984-12-27 | 1986-07-16 | Canon Inc | 回路の製造方法及び露光装置 |
| US4711535A (en) | 1985-05-10 | 1987-12-08 | The Perkin-Elmer Corporation | Ring field projection system |
| EP0237041B1 (en) * | 1986-03-12 | 1993-08-18 | Matsushita Electric Industrial Co., Ltd. | Projection optical system for use in precise copy |
| US4757354A (en) * | 1986-05-02 | 1988-07-12 | Matsushita Electrical Industrial Co., Ltd. | Projection optical system |
| DE3752388T2 (de) | 1986-07-11 | 2006-10-19 | Canon K.K. | Verkleinerndes Projektionsbelichtungssystem des Reflexionstyps für Röntgenstrahlung |
| GB2197962A (en) | 1986-11-10 | 1988-06-02 | Compact Spindle Bearing Corp | Catoptric reduction imaging apparatus |
| US4951078A (en) * | 1988-05-16 | 1990-08-21 | Minolta Camera Kabushiki Kaisha | Camera system including catadioptric lens and catadioptric lens system used therein |
| US5004331A (en) * | 1989-05-03 | 1991-04-02 | Hughes Aircraft Company | Catadioptric projector, catadioptric projection system and process |
| US5063586A (en) | 1989-10-13 | 1991-11-05 | At&T Bell Laboratories | Apparatus for semiconductor lithography |
| US5114238A (en) * | 1990-06-28 | 1992-05-19 | Lockheed Missiles & Space Company, Inc. | Infrared catadioptric zoom relay telescope |
| US5052763A (en) * | 1990-08-28 | 1991-10-01 | International Business Machines Corporation | Optical system with two subsystems separately correcting odd aberrations and together correcting even aberrations |
| US5031976A (en) * | 1990-09-24 | 1991-07-16 | Kla Instruments, Corporation | Catadioptric imaging system |
| DE69132587T2 (de) * | 1990-09-26 | 2001-09-06 | Canon K.K., Tokio/Tokyo | Photolithographisches Verarbeitungsverfahren und Vorrichtung |
| GB9020902D0 (en) * | 1990-09-26 | 1990-11-07 | Optics & Vision Ltd | Optical systems,telescopes and binoculars |
| US5315629A (en) * | 1990-10-10 | 1994-05-24 | At&T Bell Laboratories | Ringfield lithography |
| US5734496A (en) * | 1991-06-03 | 1998-03-31 | Her Majesty The Queen In Right Of New Zealand | Lens system |
| US5121256A (en) * | 1991-03-14 | 1992-06-09 | The Board Of Trustees Of The Leland Stanford Junior University | Lithography system employing a solid immersion lens |
| US5212588A (en) * | 1991-04-09 | 1993-05-18 | The United States Of America As Represented By The United States Department Of Energy | Reflective optical imaging system for extreme ultraviolet wavelengths |
| JP3203719B2 (ja) | 1991-12-26 | 2001-08-27 | 株式会社ニコン | 露光装置、その露光装置により製造されるデバイス、露光方法、およびその露光方法を用いたデバイス製造方法 |
| US5220590A (en) * | 1992-05-05 | 1993-06-15 | General Signal Corporation | X-ray projection lithography camera |
| US5353322A (en) | 1992-05-05 | 1994-10-04 | Tropel Corporation | Lens system for X-ray projection lithography camera |
| JPH06188169A (ja) | 1992-08-24 | 1994-07-08 | Canon Inc | 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法 |
| US5477304A (en) | 1992-10-22 | 1995-12-19 | Nikon Corporation | Projection exposure apparatus |
| US6078381A (en) * | 1993-02-01 | 2000-06-20 | Nikon Corporation | Exposure method and apparatus |
| US5636066A (en) * | 1993-03-12 | 1997-06-03 | Nikon Corporation | Optical apparatus |
| JP3635684B2 (ja) * | 1994-08-23 | 2005-04-06 | 株式会社ニコン | 反射屈折縮小投影光学系、反射屈折光学系、並びに投影露光方法及び装置 |
| US5410434A (en) * | 1993-09-09 | 1995-04-25 | Ultratech Stepper, Inc. | Reflective projection system comprising four spherical mirrors |
| US5515207A (en) * | 1993-11-03 | 1996-05-07 | Nikon Precision Inc. | Multiple mirror catadioptric optical system |
| DE59409276D1 (de) * | 1994-08-08 | 2000-05-11 | Micronas Intermetall Gmbh | Verfahren zur digitalen Interpolation von Signalen |
| US5488229A (en) * | 1994-10-04 | 1996-01-30 | Excimer Laser Systems, Inc. | Deep ultraviolet microlithography system |
| JPH08166542A (ja) | 1994-10-13 | 1996-06-25 | Nisshin Koki Kk | 反射屈折式光学系及びこれを用いた光学装置 |
| IL113350A (en) * | 1995-04-12 | 1998-06-15 | State Rafaelel Ministry Of Def | Catadioptric optics working staring detector system |
| JP3711586B2 (ja) | 1995-06-02 | 2005-11-02 | 株式会社ニコン | 走査露光装置 |
| US5650877A (en) * | 1995-08-14 | 1997-07-22 | Tropel Corporation | Imaging system for deep ultraviolet lithography |
| US5805365A (en) * | 1995-10-12 | 1998-09-08 | Sandia Corporation | Ringfield lithographic camera |
| JP3456323B2 (ja) * | 1995-11-01 | 2003-10-14 | 株式会社ニコン | 顕微鏡対物レンズ |
| JPH09148241A (ja) | 1995-11-27 | 1997-06-06 | Canon Inc | 走査露光装置及びそれを用いたデバイスの製造方法 |
| US5815310A (en) * | 1995-12-12 | 1998-09-29 | Svg Lithography Systems, Inc. | High numerical aperture ring field optical reduction system |
| JPH09251097A (ja) * | 1996-03-15 | 1997-09-22 | Nikon Corp | X線リソグラフィー用反射縮小結像光学系 |
| US5686728A (en) | 1996-05-01 | 1997-11-11 | Lucent Technologies Inc | Projection lithography system and method using all-reflective optical elements |
| US5729376A (en) * | 1996-07-01 | 1998-03-17 | The United States Of America As Represented By The Secretary Of The Army | Catadioptric multi-functional optical assembly |
| US5999310A (en) | 1996-07-22 | 1999-12-07 | Shafer; David Ross | Ultra-broadband UV microscope imaging system with wide range zoom capability |
| US5717518A (en) | 1996-07-22 | 1998-02-10 | Kla Instruments Corporation | Broad spectrum ultraviolet catadioptric imaging system |
| DE19633128A1 (de) | 1996-08-16 | 1998-02-19 | Zeiss Carl Fa | Achromatisches Linsensystem für Ultraviolettstrahlen mit Germaniumdioxid-Glas |
| US6169627B1 (en) * | 1996-09-26 | 2001-01-02 | Carl-Zeiss-Stiftung | Catadioptric microlithographic reduction objective |
| US6631036B2 (en) * | 1996-09-26 | 2003-10-07 | Carl-Zeiss-Stiftung | Catadioptric objective |
| AU5067898A (en) | 1996-11-28 | 1998-06-22 | Nikon Corporation | Aligner and method for exposure |
| JP4029183B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 投影露光装置及び投影露光方法 |
| US7130129B2 (en) | 1996-12-21 | 2006-10-31 | Carl Zeiss Smt Ag | Reticle-masking objective with aspherical lenses |
| DE69735016T2 (de) | 1996-12-24 | 2006-08-17 | Asml Netherlands B.V. | Lithographisches Gerät mit zwei Objekthaltern |
| JPH10183099A (ja) | 1996-12-27 | 1998-07-07 | Lion Corp | 水性媒体用低泡性摩擦抵抗低減剤及び該低減剤を用いた水性媒体の泡立ちの少ない摩擦抵抗低減方法 |
| JPH10284408A (ja) | 1997-04-08 | 1998-10-23 | Nikon Corp | 露光方法 |
| JP3747566B2 (ja) | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
| US6291110B1 (en) * | 1997-06-27 | 2001-09-18 | Pixelligent Technologies Llc | Methods for transferring a two-dimensional programmable exposure pattern for photolithography |
| US5956192A (en) * | 1997-09-18 | 1999-09-21 | Svg Lithography Systems, Inc. | Four mirror EUV projection optics |
| US5920380A (en) * | 1997-12-19 | 1999-07-06 | Sandia Corporation | Apparatus and method for generating partially coherent illumination for photolithography |
| JP4333035B2 (ja) | 1998-03-06 | 2009-09-16 | 株式会社ニコン | 露光装置および該装置を用いた半導体デバイスの製造方法 |
| US6097537A (en) * | 1998-04-07 | 2000-08-01 | Nikon Corporation | Catadioptric optical system |
| JPH11316343A (ja) * | 1998-05-01 | 1999-11-16 | Nikon Corp | カタディオプトリックレンズ |
| DE19923609A1 (de) | 1998-05-30 | 1999-12-02 | Zeiss Carl Fa | Ringfeld-4-Spiegelsysteme mit konvexem Primärspiegel für die EUV-Lithographie |
| EP1293831A1 (en) * | 1998-06-08 | 2003-03-19 | Nikon Corporation | Projection exposure apparatus and method |
| DE69933973T2 (de) * | 1998-07-29 | 2007-06-28 | Carl Zeiss Smt Ag | Katadioptrisches optisches system und damit ausgestattete belichtungsvorrichtung |
| US6213610B1 (en) * | 1998-09-21 | 2001-04-10 | Nikon Corporation | Catoptric reduction projection optical system and exposure apparatus and method using same |
| JP2000100694A (ja) * | 1998-09-22 | 2000-04-07 | Nikon Corp | 反射縮小投影光学系、該光学系を備えた投影露光装置および該装置を用いた露光方法 |
| US6220713B1 (en) * | 1998-10-23 | 2001-04-24 | Compaq Computer Corporation | Projection lens and system |
| EP1059550A4 (en) | 1998-12-25 | 2003-03-19 | Nikon Corp | REFRACTION REFLECTION IMAGE FORMING SYSTEM AND PROJECTION EXPOSURE APPARATUS INCLUDING THE OPTICAL SYSTEM |
| EP1035445B1 (de) * | 1999-02-15 | 2007-01-31 | Carl Zeiss SMT AG | Mikrolithographie-Reduktionsobjektiveinrichtung sowie Projektionsbelichtungsanlage |
| US6033079A (en) * | 1999-03-15 | 2000-03-07 | Hudyma; Russell | High numerical aperture ring field projection system for extreme ultraviolet lithography |
| US6188513B1 (en) * | 1999-03-15 | 2001-02-13 | Russell Hudyma | High numerical aperture ring field projection system for extreme ultraviolet lithography |
| US6426506B1 (en) * | 1999-05-27 | 2002-07-30 | The Regents Of The University Of California | Compact multi-bounce projection system for extreme ultraviolet projection lithography |
| US6630117B2 (en) * | 1999-06-04 | 2003-10-07 | Corning Incorporated | Making a dispersion managing crystal |
| US6867922B1 (en) | 1999-06-14 | 2005-03-15 | Canon Kabushiki Kaisha | Projection optical system and projection exposure apparatus using the same |
| DE10029938A1 (de) * | 1999-07-09 | 2001-07-05 | Zeiss Carl | Optisches System für das Vakuum-Ultraviolett |
| JP4717974B2 (ja) | 1999-07-13 | 2011-07-06 | 株式会社ニコン | 反射屈折光学系及び該光学系を備える投影露光装置 |
| US6495202B1 (en) * | 1999-09-08 | 2002-12-17 | Nikon Corporation | Method for manufacturing an optical element containing fluoride in at least its surface portions |
| EP1093021A3 (en) * | 1999-10-15 | 2004-06-30 | Nikon Corporation | Projection optical system as well as equipment and methods making use of said system |
| US6600608B1 (en) * | 1999-11-05 | 2003-07-29 | Carl-Zeiss-Stiftung | Catadioptric objective comprising two intermediate images |
| US7187503B2 (en) * | 1999-12-29 | 2007-03-06 | Carl Zeiss Smt Ag | Refractive projection objective for immersion lithography |
| US6995930B2 (en) * | 1999-12-29 | 2006-02-07 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
| TW538256B (en) * | 2000-01-14 | 2003-06-21 | Zeiss Stiftung | Microlithographic reduction projection catadioptric objective |
| US6285737B1 (en) | 2000-01-21 | 2001-09-04 | Euv Llc | Condenser for extreme-UV lithography with discharge source |
| JP2001228401A (ja) * | 2000-02-16 | 2001-08-24 | Canon Inc | 投影光学系、および該投影光学系による投影露光装置、デバイス製造方法 |
| US7301605B2 (en) * | 2000-03-03 | 2007-11-27 | Nikon Corporation | Projection exposure apparatus and method, catadioptric optical system and manufacturing method of devices |
| DE10010131A1 (de) * | 2000-03-03 | 2001-09-06 | Zeiss Carl | Mikrolithographie - Projektionsbelichtung mit tangentialer Polarisartion |
| JP2001343589A (ja) | 2000-03-31 | 2001-12-14 | Canon Inc | 投影光学系、および該投影光学系による投影露光装置、デバイス製造方法 |
| JP2002083766A (ja) * | 2000-06-19 | 2002-03-22 | Nikon Corp | 投影光学系、該光学系の製造方法、及び前記光学系を備えた投影露光装置 |
| US6842298B1 (en) * | 2000-09-12 | 2005-01-11 | Kla-Tencor Technologies Corporation | Broad band DUV, VUV long-working distance catadioptric imaging system |
| JP2004512552A (ja) * | 2000-10-20 | 2004-04-22 | カール ツァイス シュティフトゥング トレイディング アズ カール ツァイス | 8反射鏡型マイクロリソグラフィ用投影光学系 |
| JP4245286B2 (ja) * | 2000-10-23 | 2009-03-25 | 株式会社ニコン | 反射屈折光学系および該光学系を備えた露光装置 |
| JP2002217095A (ja) | 2000-11-14 | 2002-08-02 | Canon Inc | 露光装置、半導体デバイス製造方法、半導体製造工場及び露光装置の保守方法並びに位置検出装置 |
| JP2004514943A (ja) | 2000-11-28 | 2004-05-20 | カール・ツアイス・エスエムテイ・アーゲー | 157nmリソグラフィ用の反射屈折投影系 |
| JP2002208551A (ja) | 2001-01-10 | 2002-07-26 | Nikon Corp | 反射屈折光学系及び投影露光装置 |
| WO2002093209A2 (de) | 2001-05-15 | 2002-11-21 | Carl Zeiss | Objektiv mit fluorid-kristall-linsen |
| DE10123725A1 (de) | 2001-05-15 | 2002-11-21 | Zeiss Carl | Projektionsbelichtungsanlage der Mikrolithographie, Optisches System und Herstellverfahren |
| DE10127227A1 (de) * | 2001-05-22 | 2002-12-05 | Zeiss Carl | Katadioptrisches Reduktionsobjektiv |
| JP4780364B2 (ja) | 2001-06-14 | 2011-09-28 | 株式会社ニコン | 反射屈折光学系および該光学系を備えた露光装置 |
| US6995886B2 (en) * | 2001-06-21 | 2006-02-07 | Koninklijke Philips Electronics N.V. | Optical scanning device |
| DE10143385C2 (de) * | 2001-09-05 | 2003-07-17 | Zeiss Carl | Projektionsbelichtungsanlage |
| JP2003114387A (ja) | 2001-10-04 | 2003-04-18 | Nikon Corp | 反射屈折光学系および該光学系を備える投影露光装置 |
| US7140699B2 (en) * | 2002-02-14 | 2006-11-28 | Continental Teves Ag & Co. Ohg | Method for regulating a predetermined modifiable brake pressure |
| JP4016179B2 (ja) | 2002-02-28 | 2007-12-05 | ソニー株式会社 | 露光装置及び収束レンズの制御方法 |
| US7075721B2 (en) * | 2002-03-06 | 2006-07-11 | Corning Incorporated | Compensator for radially symmetric birefringence |
| DE10210899A1 (de) | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
| DE10332112A1 (de) | 2003-07-09 | 2005-01-27 | Carl Zeiss Smt Ag | Projektionsbelichtungsverfahren und Projektionsbelichtungssystem |
| JP4350341B2 (ja) * | 2002-03-26 | 2009-10-21 | キヤノン株式会社 | 光学系及び露光装置 |
| US6912042B2 (en) * | 2002-03-28 | 2005-06-28 | Carl Zeiss Smt Ag | 6-mirror projection objective with few lenses |
| JP2003297729A (ja) * | 2002-04-03 | 2003-10-17 | Nikon Corp | 投影光学系、露光装置および露光方法 |
| JP4292497B2 (ja) | 2002-04-17 | 2009-07-08 | 株式会社ニコン | 投影光学系、露光装置および露光方法 |
| JP2003309059A (ja) | 2002-04-17 | 2003-10-31 | Nikon Corp | 投影光学系、その製造方法、露光装置および露光方法 |
| JP2003307680A (ja) | 2002-04-17 | 2003-10-31 | Nikon Corp | 反射屈折光学系 |
| AU2003232226A1 (en) * | 2002-05-03 | 2003-11-17 | Carl Zeiss Smt Ag | Projection lens comprising an extremely high aperture |
| WO2004010200A1 (en) | 2002-07-17 | 2004-01-29 | Carl Zeiss Semiconductor Manufacturing Technologies Ag | Catadioptric multi-mirror systems for protection lithography |
| JP4217437B2 (ja) | 2002-07-22 | 2009-02-04 | キヤノン株式会社 | ズームレンズ及びそれを有する画像投射装置 |
| US7154669B2 (en) * | 2002-08-05 | 2006-12-26 | Asml Holding N.V. | Method and system for correction of intrinsic birefringence in UV microlithography |
| TWI242691B (en) | 2002-08-23 | 2005-11-01 | Nikon Corp | Projection optical system and method for photolithography and exposure apparatus and method using same |
| US6788477B2 (en) * | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
| US8675276B2 (en) | 2003-02-21 | 2014-03-18 | Kla-Tencor Corporation | Catadioptric imaging system for broad band microscopy |
| US20050164522A1 (en) | 2003-03-24 | 2005-07-28 | Kunz Roderick R. | Optical fluids, and systems and methods of making and using the same |
| JP2004317534A (ja) | 2003-04-11 | 2004-11-11 | Nikon Corp | 反射屈折型の結像光学系、露光装置、および露光方法 |
| JP2004333761A (ja) | 2003-05-06 | 2004-11-25 | Nikon Corp | 反射屈折型の投影光学系、露光装置、および露光方法 |
| KR101521407B1 (ko) | 2003-05-06 | 2015-05-18 | 가부시키가이샤 니콘 | 투영 광학계, 노광 장치 및 노광 방법 |
| US7348575B2 (en) * | 2003-05-06 | 2008-03-25 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
| TWI282487B (en) | 2003-05-23 | 2007-06-11 | Canon Kk | Projection optical system, exposure apparatus, and device manufacturing method |
| JP2005003982A (ja) | 2003-06-12 | 2005-01-06 | Nikon Corp | 投影光学系、露光装置および露光方法 |
| JP4437474B2 (ja) * | 2003-06-19 | 2010-03-24 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| WO2005013009A1 (en) | 2003-08-01 | 2005-02-10 | E.I. Dupont De Nemours And Company | Use of perfluoro-n-alkanes in vacuum ultraviolet applications |
| WO2005015316A2 (en) | 2003-08-12 | 2005-02-17 | Carl Zeiss Smt Ag | Projection objective for microlithography |
| US7085075B2 (en) * | 2003-08-12 | 2006-08-01 | Carl Zeiss Smt Ag | Projection objectives including a plurality of mirrors with lenses ahead of mirror M3 |
| JP4880869B2 (ja) * | 2003-08-28 | 2012-02-22 | 株式会社ニコン | レンズ系及び投影露光装置 |
| JP2007508591A (ja) | 2003-10-17 | 2007-04-05 | カール・ツァイス・エスエムティー・アーゲー | 反射屈折投影対物レンズ |
| WO2005059055A2 (en) | 2003-12-12 | 2005-06-30 | 3M Innovative Properties Company | Pressure sensitive adhesive composition and article |
| US7385764B2 (en) * | 2003-12-15 | 2008-06-10 | Carl Zeiss Smt Ag | Objectives as a microlithography projection objective with at least one liquid lens |
| US7466489B2 (en) * | 2003-12-15 | 2008-12-16 | Susanne Beder | Projection objective having a high aperture and a planar end surface |
| US7460206B2 (en) | 2003-12-19 | 2008-12-02 | Carl Zeiss Smt Ag | Projection objective for immersion lithography |
| WO2005059645A2 (en) | 2003-12-19 | 2005-06-30 | Carl Zeiss Smt Ag | Microlithography projection objective with crystal elements |
| KR101150037B1 (ko) | 2004-01-14 | 2012-07-02 | 칼 짜이스 에스엠티 게엠베하 | 반사굴절식 투영 대물렌즈 |
| US20070165198A1 (en) * | 2004-02-13 | 2007-07-19 | Carl Zeiss Smt Ag | Projection objective for a microlithographic projection exposure apparatus |
| CN1922528A (zh) * | 2004-02-18 | 2007-02-28 | 康宁股份有限公司 | 用于具有深紫外光的高数值孔径成象的反折射成象系统 |
| US7712905B2 (en) | 2004-04-08 | 2010-05-11 | Carl Zeiss Smt Ag | Imaging system with mirror group |
| US20060244938A1 (en) | 2004-05-04 | 2006-11-02 | Karl-Heinz Schuster | Microlitographic projection exposure apparatus and immersion liquid therefore |
| KR101213831B1 (ko) | 2004-05-17 | 2012-12-24 | 칼 짜이스 에스엠티 게엠베하 | 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈 |
| JP4954067B2 (ja) | 2004-07-14 | 2012-06-13 | カール・ツァイス・エスエムティー・ゲーエムベーハー | カタディオプトリック投影対物レンズ |
| US7224520B2 (en) * | 2004-09-28 | 2007-05-29 | Wavefront Research, Inc. | Compact fast catadioptric imager |
| US7697198B2 (en) * | 2004-10-15 | 2010-04-13 | Carl Zeiss Smt Ag | Catadioptric projection objective |
| DE102005045862A1 (de) * | 2004-10-19 | 2006-04-20 | Carl Zeiss Smt Ag | Optisches System für Ultraviolettlicht |
| US20060198018A1 (en) | 2005-02-04 | 2006-09-07 | Carl Zeiss Smt Ag | Imaging system |
| JP2006309220A (ja) | 2005-04-29 | 2006-11-09 | Carl Zeiss Smt Ag | 投影対物レンズ |
| WO2007025643A1 (en) | 2005-08-30 | 2007-03-08 | Carl Zeiss Smt Ag | High-na projection objective with aspheric lens surfaces |
| EP1980890B1 (en) | 2006-01-30 | 2011-09-28 | Nikon Corporation | Cata-dioptric imaging system, exposure device, and device manufacturing method |
| US8930758B2 (en) | 2012-01-16 | 2015-01-06 | Siemens Aktiengesellschaft | Automated testing of mechatronic systems |
-
2004
- 2004-12-10 WO PCT/EP2004/014100 patent/WO2005059645A2/en not_active Ceased
- 2004-12-10 JP JP2006544290A patent/JP5102492B2/ja not_active Expired - Fee Related
- 2004-12-15 US US10/596,626 patent/US7755839B2/en not_active Expired - Fee Related
- 2004-12-15 WO PCT/EP2004/014290 patent/WO2005059618A2/en not_active Ceased
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