JP2007529762A5 - - Google Patents

Download PDF

Info

Publication number
JP2007529762A5
JP2007529762A5 JP2006544290A JP2006544290A JP2007529762A5 JP 2007529762 A5 JP2007529762 A5 JP 2007529762A5 JP 2006544290 A JP2006544290 A JP 2006544290A JP 2006544290 A JP2006544290 A JP 2006544290A JP 2007529762 A5 JP2007529762 A5 JP 2007529762A5
Authority
JP
Japan
Prior art keywords
objective lens
projection
lens
microlithography
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006544290A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007529762A (ja
JP5102492B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/EP2004/014100 external-priority patent/WO2005059645A2/en
Publication of JP2007529762A publication Critical patent/JP2007529762A/ja
Publication of JP2007529762A5 publication Critical patent/JP2007529762A5/ja
Application granted granted Critical
Publication of JP5102492B2 publication Critical patent/JP5102492B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2006544290A 2003-12-19 2004-12-10 結晶素子を有するマイクロリソグラフィー投影用対物レンズ Expired - Fee Related JP5102492B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US53062303P 2003-12-19 2003-12-19
US60/530,623 2003-12-19
US56800604P 2004-05-04 2004-05-04
US60/568,006 2004-05-04
PCT/EP2004/014100 WO2005059645A2 (en) 2003-12-19 2004-12-10 Microlithography projection objective with crystal elements

Publications (3)

Publication Number Publication Date
JP2007529762A JP2007529762A (ja) 2007-10-25
JP2007529762A5 true JP2007529762A5 (enExample) 2008-02-07
JP5102492B2 JP5102492B2 (ja) 2012-12-19

Family

ID=34704297

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006544290A Expired - Fee Related JP5102492B2 (ja) 2003-12-19 2004-12-10 結晶素子を有するマイクロリソグラフィー投影用対物レンズ

Country Status (3)

Country Link
US (1) US7755839B2 (enExample)
JP (1) JP5102492B2 (enExample)
WO (2) WO2005059645A2 (enExample)

Families Citing this family (166)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW538256B (en) * 2000-01-14 2003-06-21 Zeiss Stiftung Microlithographic reduction projection catadioptric objective
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR100585476B1 (ko) 2002-11-12 2006-06-07 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조방법
US10503084B2 (en) 2002-11-12 2019-12-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG121819A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7372541B2 (en) 2002-11-12 2008-05-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE10261775A1 (de) 2002-12-20 2004-07-01 Carl Zeiss Smt Ag Vorrichtung zur optischen Vermessung eines Abbildungssystems
WO2004086468A1 (ja) 2003-02-26 2004-10-07 Nikon Corporation 露光装置、露光方法及びデバイス製造方法
WO2004086470A1 (ja) 2003-03-25 2004-10-07 Nikon Corporation 露光装置及びデバイス製造方法
KR101176817B1 (ko) 2003-04-07 2012-08-24 가부시키가이샤 니콘 노광장치 및 디바이스 제조방법
KR101177331B1 (ko) 2003-04-09 2012-08-30 가부시키가이샤 니콘 액침 리소그래피 유체 제어 시스템
JP4488005B2 (ja) 2003-04-10 2010-06-23 株式会社ニコン 液浸リソグラフィ装置用の液体を捕集するための流出通路
KR101369016B1 (ko) 2003-04-10 2014-02-28 가부시키가이샤 니콘 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템
EP3352015A1 (en) 2003-04-10 2018-07-25 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
JP4582089B2 (ja) 2003-04-11 2010-11-17 株式会社ニコン 液浸リソグラフィ用の液体噴射回収システム
KR20180054929A (ko) 2003-04-11 2018-05-24 가부시키가이샤 니콘 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법
EP2161620A1 (en) 2003-04-11 2010-03-10 Nikon Corporation Cleanup method for optics in immersion lithography
SG194246A1 (en) 2003-04-17 2013-11-29 Nikon Corp Optical arrangement of autofocus elements for use with immersion lithography
TWI295414B (en) 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
KR20060009356A (ko) 2003-05-15 2006-01-31 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
TWI503865B (zh) 2003-05-23 2015-10-11 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
TW201515064A (zh) 2003-05-23 2015-04-16 尼康股份有限公司 曝光方法及曝光裝置以及元件製造方法
KR20150036794A (ko) 2003-05-28 2015-04-07 가부시키가이샤 니콘 노광 방법, 노광 장치, 및 디바이스 제조 방법
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2261741A3 (en) 2003-06-11 2011-05-25 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101242815B1 (ko) 2003-06-13 2013-03-12 가부시키가이샤 니콘 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조방법
TWI482200B (zh) 2003-06-19 2015-04-21 尼康股份有限公司 An exposure apparatus, an exposure method, and an element manufacturing method
US7236232B2 (en) 2003-07-01 2007-06-26 Nikon Corporation Using isotopically specified fluids as optical elements
EP2466383B1 (en) 2003-07-08 2014-11-19 Nikon Corporation Wafer table for immersion lithography
KR101296501B1 (ko) 2003-07-09 2013-08-13 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
EP2264531B1 (en) 2003-07-09 2013-01-16 Nikon Corporation Exposure apparatus and device manufacturing method
ATE489724T1 (de) 2003-07-09 2010-12-15 Nikon Corp Belichtungsvorrichtung und verfahren zur bauelementherstellung
WO2005010960A1 (ja) 2003-07-25 2005-02-03 Nikon Corporation 投影光学系の検査方法および検査装置、ならびに投影光学系の製造方法
EP1503244A1 (en) 2003-07-28 2005-02-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
EP1653501B1 (en) 2003-07-28 2012-09-19 Nikon Corporation Exposure apparatus, device producing method, and exposure apparatus controlling method
US7779781B2 (en) 2003-07-31 2010-08-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI263859B (en) 2003-08-29 2006-10-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
CN101303536B (zh) 2003-08-29 2011-02-09 株式会社尼康 曝光装置和器件加工方法
EP3223053A1 (en) 2003-09-03 2017-09-27 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
JP4444920B2 (ja) 2003-09-19 2010-03-31 株式会社ニコン 露光装置及びデバイス製造方法
US8208198B2 (en) * 2004-01-14 2012-06-26 Carl Zeiss Smt Gmbh Catadioptric projection objective
KR101335736B1 (ko) 2003-09-29 2013-12-02 가부시키가이샤 니콘 노광장치, 노광방법 및 디바이스 제조방법
WO2005036623A1 (ja) 2003-10-08 2005-04-21 Zao Nikon Co., Ltd. 基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造方法
JP2005136364A (ja) 2003-10-08 2005-05-26 Zao Nikon Co Ltd 基板搬送装置、露光装置、並びにデバイス製造方法
KR101111364B1 (ko) 2003-10-08 2012-02-27 가부시키가이샤 자오 니콘 기판 반송 장치 및 기판 반송 방법, 노광 장치 및 노광방법, 디바이스 제조 방법
TW201738932A (zh) 2003-10-09 2017-11-01 尼康股份有限公司 曝光裝置及曝光方法、元件製造方法
US7411653B2 (en) 2003-10-28 2008-08-12 Asml Netherlands B.V. Lithographic apparatus
US7528929B2 (en) 2003-11-14 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN102163005B (zh) 2003-12-03 2014-05-21 株式会社尼康 投影曝光装置、器件制造方法以及光学部件
KR101345443B1 (ko) 2003-12-15 2013-12-27 가부시키가이샤 니콘 스테이지 장치, 노광 장치, 및 노광 방법
WO2005106589A1 (en) * 2004-05-04 2005-11-10 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus and immersion liquid therefore
EP1700163A1 (en) 2003-12-15 2006-09-13 Carl Zeiss SMT AG Objective as a microlithography projection objective with at least one liquid lens
US7466489B2 (en) 2003-12-15 2008-12-16 Susanne Beder Projection objective having a high aperture and a planar end surface
JP5102492B2 (ja) 2003-12-19 2012-12-19 カール・ツァイス・エスエムティー・ゲーエムベーハー 結晶素子を有するマイクロリソグラフィー投影用対物レンズ
US7460206B2 (en) * 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
CN1910494B (zh) * 2004-01-14 2011-08-10 卡尔蔡司Smt有限责任公司 反射折射投影物镜
US20080151365A1 (en) * 2004-01-14 2008-06-26 Carl Zeiss Smt Ag Catadioptric projection objective
US7463422B2 (en) 2004-01-14 2008-12-09 Carl Zeiss Smt Ag Projection exposure apparatus
US20070019179A1 (en) 2004-01-16 2007-01-25 Damian Fiolka Polarization-modulating optical element
EP1716457B9 (en) 2004-01-16 2012-04-04 Carl Zeiss SMT GmbH Projection system with a polarization-modulating element having a variable thickness profile
KR101204157B1 (ko) 2004-01-20 2012-11-22 칼 짜이스 에스엠테 게엠베하 마이크로 리소그래픽 투영 노광 장치 및 그 투영 렌즈를 위한 측정 장치
TWI395068B (zh) 2004-01-27 2013-05-01 尼康股份有限公司 光學系統、曝光裝置以及曝光方法
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
EP1713114B1 (en) 2004-02-03 2018-09-19 Nikon Corporation Exposure apparatus and device manufacturing method
CN100592210C (zh) 2004-02-13 2010-02-24 卡尔蔡司Smt股份公司 微平版印刷投影曝光装置的投影物镜
WO2005081067A1 (en) * 2004-02-13 2005-09-01 Carl Zeiss Smt Ag Projection objective for a microlithographic projection exposure apparatus
JP4370992B2 (ja) * 2004-02-18 2009-11-25 株式会社ニコン 光学素子及び露光装置
DE102004013886A1 (de) 2004-03-16 2005-10-06 Carl Zeiss Smt Ag Verfahren zur Mehrfachbelichtung, Mikrolithografie-Projektionsbelichtungsanlage und Projektionssystem
KR101504445B1 (ko) 2004-03-25 2015-03-19 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
WO2005098504A1 (en) 2004-04-08 2005-10-20 Carl Zeiss Smt Ag Imaging system with mirror group
EP1747499A2 (en) 2004-05-04 2007-01-31 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
KR101213831B1 (ko) 2004-05-17 2012-12-24 칼 짜이스 에스엠티 게엠베하 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈
US7616383B2 (en) 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4913041B2 (ja) * 2004-06-04 2012-04-11 カール・ツァイス・エスエムティー・ゲーエムベーハー 強度変化の補償を伴う投影系及びそのための補償素子
US7796274B2 (en) 2004-06-04 2010-09-14 Carl Zeiss Smt Ag System for measuring the image quality of an optical imaging system
CN105467775B (zh) 2004-06-09 2018-04-10 株式会社尼康 曝光装置及元件制造方法
US7463330B2 (en) 2004-07-07 2008-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE602005016429D1 (de) 2004-07-12 2009-10-15 Nippon Kogaku Kk Hren
US8305553B2 (en) 2004-08-18 2012-11-06 Nikon Corporation Exposure apparatus and device manufacturing method
US7701550B2 (en) 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2006047127A1 (en) * 2004-10-21 2006-05-04 Saint-Gobain Ceramics & Plastics, Inc. Optical lens elements, semiconductor lithographic patterning apparatus, and methods for processing semiconductor devices
JP2008517473A (ja) * 2004-10-22 2008-05-22 カール・ツアイス・エスエムテイ・アーゲー マイクロリソグラフィ用の投影露光装置
US7397533B2 (en) 2004-12-07 2008-07-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN101073021B (zh) * 2004-12-09 2011-11-23 卡尔蔡司Smt有限责任公司 用于显微光刻投影曝光装置的传输光学元件和物镜
US7880860B2 (en) 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7405805B2 (en) 2004-12-28 2008-07-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2506289A3 (en) 2005-01-31 2013-05-22 Nikon Corporation Exposure apparatus and method for manufacturing device
US8692973B2 (en) 2005-01-31 2014-04-08 Nikon Corporation Exposure apparatus and method for producing device
EP1851574A1 (en) * 2005-02-25 2007-11-07 Carl Zeiss SMT AG Optical system, in particular objective or illumination system for a microlithographic projection exposure apparatus
US7282701B2 (en) 2005-02-28 2007-10-16 Asml Netherlands B.V. Sensor for use in a lithographic apparatus
DE102005010655A1 (de) * 2005-03-08 2006-09-14 Schott Ag Verfahren zur Herstellung von optischen Elementen für die Mikrolithographie, damit erhältliche Linsensysteme und deren Verwendung
EP1701179A1 (de) * 2005-03-08 2006-09-13 Schott AG Verfahren zur Herstellung von optischen Elementen für die Mikrolithographie, damit erhältliche Linsensysteme und deren Verwendung
USRE43576E1 (en) 2005-04-08 2012-08-14 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
DE102006013560A1 (de) * 2005-04-19 2006-10-26 Carl Zeiss Smt Ag Projektionsobjektiv einer mikrolithographischen Projektionsbelichtungsanlage sowie Verfahren zu dessen Herstellung
CN101243359B (zh) * 2005-08-10 2011-04-06 卡尔蔡司Smt有限责任公司 成像系统、特别是显微光刻投影曝光设备的投影物镜
CN101263432B (zh) 2005-09-14 2011-07-27 卡尔蔡司Smt有限责任公司 微光刻曝光系统的光学系统
EP1936665A4 (en) 2005-09-21 2010-03-31 Nikon Corp EXPOSURE DEVICE, EXPOSURE METHOD AND COMPONENT MANUFACTURING METHOD
GB2431670A (en) * 2005-10-25 2007-05-02 Zeiss Carl Smt Ag Protective coating with windows for protection of optical element that is soluble in immersion liquid.
JPWO2007052659A1 (ja) 2005-11-01 2009-04-30 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
EP1950612A1 (en) 2005-11-09 2008-07-30 Nikon Corporation Exposure apparatus and method, and method for manufacturing device
TW200719095A (en) 2005-11-09 2007-05-16 Nikon Corp Exposure apparatus, exposure method and device manufacturing method
TWI397945B (zh) 2005-11-14 2013-06-01 尼康股份有限公司 A liquid recovery member, an exposure apparatus, an exposure method, and an element manufacturing method
JP2007165869A (ja) 2005-11-21 2007-06-28 Nikon Corp 露光方法及びそれを用いたデバイス製造方法、露光装置、並びに基板処理方法及び装置
US7803516B2 (en) 2005-11-21 2010-09-28 Nikon Corporation Exposure method, device manufacturing method using the same, exposure apparatus, and substrate processing method and apparatus
US7782442B2 (en) 2005-12-06 2010-08-24 Nikon Corporation Exposure apparatus, exposure method, projection optical system and device producing method
EP2768016B1 (en) 2005-12-08 2017-10-25 Nikon Corporation Exposure apparatus and method
EP1978546A4 (en) 2005-12-28 2010-08-04 Nikon Corp EXPOSURE DEVICE, EXPOSURE METHOD AND COMPONENT MANUFACTURING METHOD
US7649611B2 (en) 2005-12-30 2010-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1986224A4 (en) 2006-02-16 2012-01-25 Nikon Corp EXPOSURE APPARATUS, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD
KR20080102390A (ko) 2006-02-16 2008-11-25 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
KR20080102192A (ko) 2006-02-16 2008-11-24 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
KR20080101865A (ko) 2006-02-16 2008-11-21 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
KR101346581B1 (ko) 2006-02-21 2014-01-02 가부시키가이샤 니콘 패턴 형성 장치 및 패턴 형성 방법, 이동체 구동 시스템 및이동체 구동 방법, 노광 장치 및 노광 방법, 그리고 디바이스 제조 방법
EP3267259A1 (en) 2006-02-21 2018-01-10 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
JP5195417B2 (ja) 2006-02-21 2013-05-08 株式会社ニコン パターン形成装置、露光装置、露光方法及びデバイス製造方法
US7764427B2 (en) 2006-02-21 2010-07-27 Carl Zeiss Smt Ag Microlithography optical system
KR20080107363A (ko) 2006-03-03 2008-12-10 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
EP1995768A4 (en) 2006-03-13 2013-02-06 Nikon Corp EXPOSURE DEVICE, MAINTENANCE METHOD, EXPOSURE METHOD AND DEVICE MANUFACTURING METHOD
US8982322B2 (en) 2006-03-17 2015-03-17 Nikon Corporation Exposure apparatus and device manufacturing method
US20070242254A1 (en) 2006-03-17 2007-10-18 Nikon Corporation Exposure apparatus and device manufacturing method
US20080013062A1 (en) 2006-03-23 2008-01-17 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8125613B2 (en) 2006-04-21 2012-02-28 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
DE102006021797A1 (de) 2006-05-09 2007-11-15 Carl Zeiss Smt Ag Optische Abbildungseinrichtung mit thermischer Dämpfung
EP2023378B1 (en) 2006-05-10 2013-03-13 Nikon Corporation Exposure apparatus and device manufacturing method
JP5217239B2 (ja) 2006-05-18 2013-06-19 株式会社ニコン 露光方法及び装置、メンテナンス方法、並びにデバイス製造方法
TW200818256A (en) 2006-05-22 2008-04-16 Nikon Corp Exposure method and apparatus, maintenance method, and device manufacturing method
JP5019170B2 (ja) 2006-05-23 2012-09-05 株式会社ニコン メンテナンス方法、露光方法及び装置、並びにデバイス製造方法
WO2007138834A1 (ja) 2006-05-31 2007-12-06 Nikon Corporation 露光装置及び露光方法
KR101379096B1 (ko) 2006-06-16 2014-03-28 칼 짜이스 에스엠티 게엠베하 마이크로 리소그라피 투사 노광 장치의 투사 대물렌즈
KR101236043B1 (ko) 2006-07-14 2013-02-21 가부시키가이샤 니콘 스테이지 장치, 노광 장치 및 디바이스 제조 방법
KR101523388B1 (ko) 2006-08-30 2015-05-27 가부시키가이샤 니콘 노광 장치, 디바이스 제조 방법, 클리닝 방법 및 클리닝용 부재
US7972438B2 (en) * 2006-08-30 2011-07-05 Crystal Photonics, Incorporated High-index UV optical materials for immersion lithography
JP5029611B2 (ja) 2006-09-08 2012-09-19 株式会社ニコン クリーニング用部材、クリーニング方法、露光装置、並びにデバイス製造方法
JP4905455B2 (ja) 2006-09-08 2012-03-28 株式会社ニコン マスク、露光装置、及びデバイス製造方法
US7872730B2 (en) 2006-09-15 2011-01-18 Nikon Corporation Immersion exposure apparatus and immersion exposure method, and device manufacturing method
US7557997B2 (en) 2006-09-28 2009-07-07 Nikon Corporation Immersion objective optical system, exposure apparatus, device fabrication method, and boundary optical element
KR101413891B1 (ko) 2006-09-29 2014-06-30 가부시키가이샤 니콘 노광 장치 및 노광 방법, 그리고 디바이스 제조 방법
US8023104B2 (en) 2007-01-22 2011-09-20 Carl Zeiss Smt Gmbh Microlithographic projection exposure apparatus
US8004651B2 (en) 2007-01-23 2011-08-23 Nikon Corporation Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method
JP2008216498A (ja) * 2007-03-01 2008-09-18 Canon Inc 投影光学系、露光装置及びデバイス製造方法
US8237911B2 (en) 2007-03-15 2012-08-07 Nikon Corporation Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
US8134685B2 (en) 2007-03-23 2012-03-13 Nikon Corporation Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method
KR20100031694A (ko) 2007-05-28 2010-03-24 가부시키가이샤 니콘 노광 장치, 디바이스 제조 방법, 세정 장치, 및 클리닝 방법 그리고 노광 방법
DE102008001761A1 (de) 2007-06-06 2008-12-11 Carl Zeiss Smt Ag Projektionsobjektiv einer mikrolithographischen Projektionsbelichtungsanlage
US8547527B2 (en) 2007-07-24 2013-10-01 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and pattern formation apparatus, and device manufacturing method
EP2184768B1 (en) 2007-07-24 2015-09-09 Nikon Corporation Mobile object driving method, mobile object driving system, pattern forming method and apparatus, exposure method and apparatus and device manufacturing method
US8194232B2 (en) 2007-07-24 2012-06-05 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, position control method and position control system, and device manufacturing method
US8218129B2 (en) 2007-08-24 2012-07-10 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, measuring method, and position measurement system
US8237919B2 (en) 2007-08-24 2012-08-07 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method for continuous position measurement of movable body before and after switching between sensor heads
US8867022B2 (en) 2007-08-24 2014-10-21 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, and device manufacturing method
US9304412B2 (en) 2007-08-24 2016-04-05 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and measuring method
US8023106B2 (en) 2007-08-24 2011-09-20 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method
WO2009043790A2 (en) * 2007-10-02 2009-04-09 Carl Zeiss Smt Ag Projection objective for microlithography
US8279399B2 (en) 2007-10-22 2012-10-02 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US9013681B2 (en) 2007-11-06 2015-04-21 Nikon Corporation Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method
US9256140B2 (en) 2007-11-07 2016-02-09 Nikon Corporation Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method with measurement device to measure movable body in Z direction
KR101470671B1 (ko) 2007-11-07 2014-12-08 가부시키가이샤 니콘 노광 장치 및 노광 방법, 그리고 디바이스 제조 방법
US8665455B2 (en) 2007-11-08 2014-03-04 Nikon Corporation Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method
US8422015B2 (en) 2007-11-09 2013-04-16 Nikon Corporation Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method
US8711327B2 (en) 2007-12-14 2014-04-29 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
CN101681809B (zh) 2007-12-28 2012-04-25 株式会社尼康 曝光装置、曝光方法以及器件制造方法
US9176393B2 (en) 2008-05-28 2015-11-03 Asml Netherlands B.V. Lithographic apparatus and a method of operating the apparatus
TWI434142B (zh) * 2008-07-25 2014-04-11 Nanya Technology Corp 具有光纖模組的微影裝置
EP2381310B1 (en) 2010-04-22 2015-05-06 ASML Netherlands BV Fluid handling structure and lithographic apparatus
CN116263565A (zh) * 2021-12-13 2023-06-16 长鑫存储技术有限公司 光刻胶图案的形成方法和投影式曝光装置
US12253804B2 (en) * 2021-12-13 2025-03-18 Changxin Memory Technologies, Inc. Method of forming photoresist pattern and projection exposure apparatus

Family Cites Families (165)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2380887A (en) 1941-05-22 1945-07-31 Taylor Taylor & Hobson Ltd Optical system
NL269391A (enExample) 1961-09-19
JPS6019484B2 (ja) 1975-11-07 1985-05-16 キヤノン株式会社 複写用レンズ
US4293186A (en) 1977-02-11 1981-10-06 The Perkin-Elmer Corporation Restricted off-axis field optical system
CH624776A5 (enExample) 1977-12-08 1981-08-14 Kern & Co Ag
US4241390A (en) 1978-02-06 1980-12-23 The Perkin-Elmer Corporation System for illuminating an annular field
CH651943A5 (de) 1980-08-16 1985-10-15 Ludvik Dr Canzek Katadioptrisches objektiv hoher oeffnung.
JPS5744115A (en) 1980-08-30 1982-03-12 Asahi Optical Co Ltd Reflex telephoto zoom lens system
US4346164A (en) 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
GB2146454B (en) 1981-05-15 1986-04-16 Gen Signal Corp Apparatus for projecting a series of images onto dies of a semiconductor wafer
US4469414A (en) 1982-06-01 1984-09-04 The Perkin-Elmer Corporation Restrictive off-axis field optical system
JPS60184223A (ja) 1984-03-01 1985-09-19 Nippon Kogaku Kk <Nikon> 反射屈折式望遠レンズ
US4812028A (en) 1984-07-23 1989-03-14 Nikon Corporation Reflection type reduction projection optical system
US4834515A (en) 1984-11-29 1989-05-30 Lockheed Missiles & Space Company, Inc. Catadioptric imaging system with dioptric assembly of the petzval type
US4779966A (en) 1984-12-21 1988-10-25 The Perkin-Elmer Corporation Single mirror projection optical system
JPS61156737A (ja) 1984-12-27 1986-07-16 Canon Inc 回路の製造方法及び露光装置
US4711535A (en) 1985-05-10 1987-12-08 The Perkin-Elmer Corporation Ring field projection system
US4861148A (en) 1986-03-12 1989-08-29 Matsushita Electric Industrial Co., Inc. Projection optical system for use in precise copy
US4757354A (en) 1986-05-02 1988-07-12 Matsushita Electrical Industrial Co., Ltd. Projection optical system
EP0947882B1 (en) 1986-07-11 2006-03-29 Canon Kabushiki Kaisha X-ray reduction projection exposure system of reflection type
GB2197962A (en) 1986-11-10 1988-06-02 Compact Spindle Bearing Corp Catoptric reduction imaging apparatus
US4951078A (en) 1988-05-16 1990-08-21 Minolta Camera Kabushiki Kaisha Camera system including catadioptric lens and catadioptric lens system used therein
US5004331A (en) 1989-05-03 1991-04-02 Hughes Aircraft Company Catadioptric projector, catadioptric projection system and process
US5063586A (en) 1989-10-13 1991-11-05 At&T Bell Laboratories Apparatus for semiconductor lithography
US5114238A (en) 1990-06-28 1992-05-19 Lockheed Missiles & Space Company, Inc. Infrared catadioptric zoom relay telescope
US5052763A (en) * 1990-08-28 1991-10-01 International Business Machines Corporation Optical system with two subsystems separately correcting odd aberrations and together correcting even aberrations
US5031976A (en) 1990-09-24 1991-07-16 Kla Instruments, Corporation Catadioptric imaging system
EP0908781A3 (en) 1990-09-26 1999-04-21 Canon Kabushiki Kaisha Photolithographic processing method and apparatus
GB9020902D0 (en) 1990-09-26 1990-11-07 Optics & Vision Ltd Optical systems,telescopes and binoculars
US5315629A (en) 1990-10-10 1994-05-24 At&T Bell Laboratories Ringfield lithography
US5734496A (en) 1991-06-03 1998-03-31 Her Majesty The Queen In Right Of New Zealand Lens system
US5121256A (en) 1991-03-14 1992-06-09 The Board Of Trustees Of The Leland Stanford Junior University Lithography system employing a solid immersion lens
US5212588A (en) 1991-04-09 1993-05-18 The United States Of America As Represented By The United States Department Of Energy Reflective optical imaging system for extreme ultraviolet wavelengths
JP3203719B2 (ja) 1991-12-26 2001-08-27 株式会社ニコン 露光装置、その露光装置により製造されるデバイス、露光方法、およびその露光方法を用いたデバイス製造方法
US5353322A (en) 1992-05-05 1994-10-04 Tropel Corporation Lens system for X-ray projection lithography camera
US5220590A (en) 1992-05-05 1993-06-15 General Signal Corporation X-ray projection lithography camera
JPH06188169A (ja) 1992-08-24 1994-07-08 Canon Inc 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法
US5477304A (en) 1992-10-22 1995-12-19 Nikon Corporation Projection exposure apparatus
US6078381A (en) 1993-02-01 2000-06-20 Nikon Corporation Exposure method and apparatus
JP3635684B2 (ja) 1994-08-23 2005-04-06 株式会社ニコン 反射屈折縮小投影光学系、反射屈折光学系、並びに投影露光方法及び装置
US5636066A (en) 1993-03-12 1997-06-03 Nikon Corporation Optical apparatus
US5410434A (en) 1993-09-09 1995-04-25 Ultratech Stepper, Inc. Reflective projection system comprising four spherical mirrors
US5515207A (en) 1993-11-03 1996-05-07 Nikon Precision Inc. Multiple mirror catadioptric optical system
EP0696848B1 (de) * 1994-08-08 2000-04-05 Micronas Intermetall GmbH Verfahren zur digitalen Interpolation von Signalen
US5488229A (en) 1994-10-04 1996-01-30 Excimer Laser Systems, Inc. Deep ultraviolet microlithography system
JPH08166542A (ja) 1994-10-13 1996-06-25 Nisshin Koki Kk 反射屈折式光学系及びこれを用いた光学装置
IL113350A (en) 1995-04-12 1998-06-15 State Rafaelel Ministry Of Def Catadioptric optics working staring detector system
JP3711586B2 (ja) 1995-06-02 2005-11-02 株式会社ニコン 走査露光装置
US5650877A (en) 1995-08-14 1997-07-22 Tropel Corporation Imaging system for deep ultraviolet lithography
US5805365A (en) 1995-10-12 1998-09-08 Sandia Corporation Ringfield lithographic camera
JP3456323B2 (ja) 1995-11-01 2003-10-14 株式会社ニコン 顕微鏡対物レンズ
JPH09148241A (ja) 1995-11-27 1997-06-06 Canon Inc 走査露光装置及びそれを用いたデバイスの製造方法
US5815310A (en) 1995-12-12 1998-09-29 Svg Lithography Systems, Inc. High numerical aperture ring field optical reduction system
JPH09251097A (ja) 1996-03-15 1997-09-22 Nikon Corp X線リソグラフィー用反射縮小結像光学系
US5686728A (en) 1996-05-01 1997-11-11 Lucent Technologies Inc Projection lithography system and method using all-reflective optical elements
US5729376A (en) 1996-07-01 1998-03-17 The United States Of America As Represented By The Secretary Of The Army Catadioptric multi-functional optical assembly
US5717518A (en) 1996-07-22 1998-02-10 Kla Instruments Corporation Broad spectrum ultraviolet catadioptric imaging system
US5999310A (en) 1996-07-22 1999-12-07 Shafer; David Ross Ultra-broadband UV microscope imaging system with wide range zoom capability
DE19633128A1 (de) 1996-08-16 1998-02-19 Zeiss Carl Fa Achromatisches Linsensystem für Ultraviolettstrahlen mit Germaniumdioxid-Glas
US6631036B2 (en) 1996-09-26 2003-10-07 Carl-Zeiss-Stiftung Catadioptric objective
US6169627B1 (en) 1996-09-26 2001-01-02 Carl-Zeiss-Stiftung Catadioptric microlithographic reduction objective
CN1144263C (zh) 1996-11-28 2004-03-31 株式会社尼康 曝光装置以及曝光方法
JP4029183B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
US7130129B2 (en) 1996-12-21 2006-10-31 Carl Zeiss Smt Ag Reticle-masking objective with aspherical lenses
EP0890136B9 (en) 1996-12-24 2003-12-10 ASML Netherlands B.V. Two-dimensionally balanced positioning device with two object holders, and lithographic device provided with such a positioning device
JPH10183099A (ja) 1996-12-27 1998-07-07 Lion Corp 水性媒体用低泡性摩擦抵抗低減剤及び該低減剤を用いた水性媒体の泡立ちの少ない摩擦抵抗低減方法
JPH10284408A (ja) 1997-04-08 1998-10-23 Nikon Corp 露光方法
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
US6291110B1 (en) * 1997-06-27 2001-09-18 Pixelligent Technologies Llc Methods for transferring a two-dimensional programmable exposure pattern for photolithography
US5956192A (en) 1997-09-18 1999-09-21 Svg Lithography Systems, Inc. Four mirror EUV projection optics
US5920380A (en) 1997-12-19 1999-07-06 Sandia Corporation Apparatus and method for generating partially coherent illumination for photolithography
TW403937B (en) 1998-03-06 2000-09-01 Nikon Corp Exposure device and method of manufacturing semiconductor device
US6097537A (en) 1998-04-07 2000-08-01 Nikon Corporation Catadioptric optical system
JPH11316343A (ja) 1998-05-01 1999-11-16 Nikon Corp カタディオプトリックレンズ
DE19923609A1 (de) 1998-05-30 1999-12-02 Zeiss Carl Fa Ringfeld-4-Spiegelsysteme mit konvexem Primärspiegel für die EUV-Lithographie
EP0964307A3 (en) 1998-06-08 2001-09-05 Nikon Corporation Projection exposure apparatus and method
EP0989434B1 (en) 1998-07-29 2006-11-15 Carl Zeiss SMT AG Catadioptric optical system and exposure apparatus having the same
US6213610B1 (en) 1998-09-21 2001-04-10 Nikon Corporation Catoptric reduction projection optical system and exposure apparatus and method using same
JP2000100694A (ja) 1998-09-22 2000-04-07 Nikon Corp 反射縮小投影光学系、該光学系を備えた投影露光装置および該装置を用いた露光方法
US6220713B1 (en) 1998-10-23 2001-04-24 Compaq Computer Corporation Projection lens and system
WO2000039623A1 (en) 1998-12-25 2000-07-06 Nikon Corporation Reflection refraction image-forming optical system and projection exposure apparatus comprising the optical system
EP1772775B1 (de) 1999-02-15 2008-11-05 Carl Zeiss SMT AG Mikrolithographie-Reduktionsobjektiveinrichtung sowie Projektionsbelichtungsanlage
US6188513B1 (en) 1999-03-15 2001-02-13 Russell Hudyma High numerical aperture ring field projection system for extreme ultraviolet lithography
US6033079A (en) 1999-03-15 2000-03-07 Hudyma; Russell High numerical aperture ring field projection system for extreme ultraviolet lithography
US6426506B1 (en) 1999-05-27 2002-07-30 The Regents Of The University Of California Compact multi-bounce projection system for extreme ultraviolet projection lithography
US6630117B2 (en) * 1999-06-04 2003-10-07 Corning Incorporated Making a dispersion managing crystal
US6867922B1 (en) 1999-06-14 2005-03-15 Canon Kabushiki Kaisha Projection optical system and projection exposure apparatus using the same
DE10029938A1 (de) 1999-07-09 2001-07-05 Zeiss Carl Optisches System für das Vakuum-Ultraviolett
JP4717974B2 (ja) 1999-07-13 2011-07-06 株式会社ニコン 反射屈折光学系及び該光学系を備える投影露光装置
US6495202B1 (en) * 1999-09-08 2002-12-17 Nikon Corporation Method for manufacturing an optical element containing fluoride in at least its surface portions
EP1093021A3 (en) 1999-10-15 2004-06-30 Nikon Corporation Projection optical system as well as equipment and methods making use of said system
US6600608B1 (en) 1999-11-05 2003-07-29 Carl-Zeiss-Stiftung Catadioptric objective comprising two intermediate images
US6995930B2 (en) 1999-12-29 2006-02-07 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
US7187503B2 (en) 1999-12-29 2007-03-06 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
TW538256B (en) 2000-01-14 2003-06-21 Zeiss Stiftung Microlithographic reduction projection catadioptric objective
US6285737B1 (en) 2000-01-21 2001-09-04 Euv Llc Condenser for extreme-UV lithography with discharge source
JP2001228401A (ja) 2000-02-16 2001-08-24 Canon Inc 投影光学系、および該投影光学系による投影露光装置、デバイス製造方法
DE10010131A1 (de) 2000-03-03 2001-09-06 Zeiss Carl Mikrolithographie - Projektionsbelichtung mit tangentialer Polarisartion
US7301605B2 (en) 2000-03-03 2007-11-27 Nikon Corporation Projection exposure apparatus and method, catadioptric optical system and manufacturing method of devices
JP2001343589A (ja) 2000-03-31 2001-12-14 Canon Inc 投影光学系、および該投影光学系による投影露光装置、デバイス製造方法
JP2002083766A (ja) 2000-06-19 2002-03-22 Nikon Corp 投影光学系、該光学系の製造方法、及び前記光学系を備えた投影露光装置
US6842298B1 (en) 2000-09-12 2005-01-11 Kla-Tencor Technologies Corporation Broad band DUV, VUV long-working distance catadioptric imaging system
EP1327172A1 (de) 2000-10-20 2003-07-16 Carl Zeiss 8-spiegel-mikrolithographie-projektionsobjektiv
JP4245286B2 (ja) 2000-10-23 2009-03-25 株式会社ニコン 反射屈折光学系および該光学系を備えた露光装置
JP2002217095A (ja) 2000-11-14 2002-08-02 Canon Inc 露光装置、半導体デバイス製造方法、半導体製造工場及び露光装置の保守方法並びに位置検出装置
JP2004514943A (ja) 2000-11-28 2004-05-20 カール・ツアイス・エスエムテイ・アーゲー 157nmリソグラフィ用の反射屈折投影系
JP2002208551A (ja) 2001-01-10 2002-07-26 Nikon Corp 反射屈折光学系及び投影露光装置
WO2002093209A2 (de) 2001-05-15 2002-11-21 Carl Zeiss Objektiv mit fluorid-kristall-linsen
DE10123725A1 (de) 2001-05-15 2002-11-21 Zeiss Carl Projektionsbelichtungsanlage der Mikrolithographie, Optisches System und Herstellverfahren
DE10127227A1 (de) 2001-05-22 2002-12-05 Zeiss Carl Katadioptrisches Reduktionsobjektiv
JP4780364B2 (ja) 2001-06-14 2011-09-28 株式会社ニコン 反射屈折光学系および該光学系を備えた露光装置
KR20030023761A (ko) 2001-06-21 2003-03-19 코닌클리케 필립스 일렉트로닉스 엔.브이. 광학 주사장치
DE10143385C2 (de) * 2001-09-05 2003-07-17 Zeiss Carl Projektionsbelichtungsanlage
JP2003114387A (ja) 2001-10-04 2003-04-18 Nikon Corp 反射屈折光学系および該光学系を備える投影露光装置
US7140699B2 (en) 2002-02-14 2006-11-28 Continental Teves Ag & Co. Ohg Method for regulating a predetermined modifiable brake pressure
JP4016179B2 (ja) 2002-02-28 2007-12-05 ソニー株式会社 露光装置及び収束レンズの制御方法
US7075721B2 (en) * 2002-03-06 2006-07-11 Corning Incorporated Compensator for radially symmetric birefringence
DE10332112A1 (de) 2003-07-09 2005-01-27 Carl Zeiss Smt Ag Projektionsbelichtungsverfahren und Projektionsbelichtungssystem
DE10210899A1 (de) 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refraktives Projektionsobjektiv für Immersions-Lithographie
JP4350341B2 (ja) * 2002-03-26 2009-10-21 キヤノン株式会社 光学系及び露光装置
US6912042B2 (en) 2002-03-28 2005-06-28 Carl Zeiss Smt Ag 6-mirror projection objective with few lenses
JP2003297729A (ja) * 2002-04-03 2003-10-17 Nikon Corp 投影光学系、露光装置および露光方法
JP4292497B2 (ja) 2002-04-17 2009-07-08 株式会社ニコン 投影光学系、露光装置および露光方法
JP2003309059A (ja) 2002-04-17 2003-10-31 Nikon Corp 投影光学系、その製造方法、露光装置および露光方法
JP2003307680A (ja) 2002-04-17 2003-10-31 Nikon Corp 反射屈折光学系
JP2005524866A (ja) * 2002-05-03 2005-08-18 カール・ツァイス・エスエムティー・アーゲー 超高開口度の投影対物レンズ
WO2004010200A1 (en) 2002-07-17 2004-01-29 Carl Zeiss Semiconductor Manufacturing Technologies Ag Catadioptric multi-mirror systems for protection lithography
JP4217437B2 (ja) 2002-07-22 2009-02-04 キヤノン株式会社 ズームレンズ及びそれを有する画像投射装置
US7154669B2 (en) * 2002-08-05 2006-12-26 Asml Holding N.V. Method and system for correction of intrinsic birefringence in UV microlithography
JP2005536775A (ja) 2002-08-23 2005-12-02 株式会社ニコン 投影光学系、フォトリソグラフィ方法および露光装置、並びに露光装置を用いた方法
US6788477B2 (en) 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
US8675276B2 (en) 2003-02-21 2014-03-18 Kla-Tencor Corporation Catadioptric imaging system for broad band microscopy
US20050164522A1 (en) 2003-03-24 2005-07-28 Kunz Roderick R. Optical fluids, and systems and methods of making and using the same
JP2004317534A (ja) 2003-04-11 2004-11-11 Nikon Corp 反射屈折型の結像光学系、露光装置、および露光方法
JP2004333761A (ja) 2003-05-06 2004-11-25 Nikon Corp 反射屈折型の投影光学系、露光装置、および露光方法
US7348575B2 (en) 2003-05-06 2008-03-25 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
EP2672307A3 (en) 2003-05-06 2014-07-23 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US6995833B2 (en) 2003-05-23 2006-02-07 Canon Kabushiki Kaisha Projection optical system, exposure apparatus, and device manufacturing method
JP2005003982A (ja) 2003-06-12 2005-01-06 Nikon Corp 投影光学系、露光装置および露光方法
TWI482200B (zh) 2003-06-19 2015-04-21 尼康股份有限公司 An exposure apparatus, an exposure method, and an element manufacturing method
WO2005013009A1 (en) 2003-08-01 2005-02-10 E.I. Dupont De Nemours And Company Use of perfluoro-n-alkanes in vacuum ultraviolet applications
US7085075B2 (en) 2003-08-12 2006-08-01 Carl Zeiss Smt Ag Projection objectives including a plurality of mirrors with lenses ahead of mirror M3
WO2005015316A2 (en) 2003-08-12 2005-02-17 Carl Zeiss Smt Ag Projection objective for microlithography
JP4880869B2 (ja) * 2003-08-28 2012-02-22 株式会社ニコン レンズ系及び投影露光装置
JP2007508591A (ja) 2003-10-17 2007-04-05 カール・ツァイス・エスエムティー・アーゲー 反射屈折投影対物レンズ
US20070077418A1 (en) 2003-12-12 2007-04-05 Aizo Sakurai Pressure sensitive adhesive composition and article
US7466489B2 (en) 2003-12-15 2008-12-16 Susanne Beder Projection objective having a high aperture and a planar end surface
EP1700163A1 (en) 2003-12-15 2006-09-13 Carl Zeiss SMT AG Objective as a microlithography projection objective with at least one liquid lens
WO2005106589A1 (en) 2004-05-04 2005-11-10 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus and immersion liquid therefore
JP5102492B2 (ja) 2003-12-19 2012-12-19 カール・ツァイス・エスエムティー・ゲーエムベーハー 結晶素子を有するマイクロリソグラフィー投影用対物レンズ
US7460206B2 (en) 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
CN1910494B (zh) 2004-01-14 2011-08-10 卡尔蔡司Smt有限责任公司 反射折射投影物镜
WO2005081067A1 (en) 2004-02-13 2005-09-01 Carl Zeiss Smt Ag Projection objective for a microlithographic projection exposure apparatus
EP1721201A1 (en) 2004-02-18 2006-11-15 Corning Incorporated Catadioptric imaging system for high numerical aperture imaging with deep ultraviolet light
WO2005098504A1 (en) 2004-04-08 2005-10-20 Carl Zeiss Smt Ag Imaging system with mirror group
KR101213831B1 (ko) 2004-05-17 2012-12-24 칼 짜이스 에스엠티 게엠베하 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈
EP1771771B1 (en) 2004-07-14 2009-12-30 Carl Zeiss SMT AG Catadioptric projection objective
US7224520B2 (en) 2004-09-28 2007-05-29 Wavefront Research, Inc. Compact fast catadioptric imager
US7697198B2 (en) 2004-10-15 2010-04-13 Carl Zeiss Smt Ag Catadioptric projection objective
DE102005045862A1 (de) 2004-10-19 2006-04-20 Carl Zeiss Smt Ag Optisches System für Ultraviolettlicht
US20060198018A1 (en) 2005-02-04 2006-09-07 Carl Zeiss Smt Ag Imaging system
JP2006309220A (ja) 2005-04-29 2006-11-09 Carl Zeiss Smt Ag 投影対物レンズ
WO2007025643A1 (en) 2005-08-30 2007-03-08 Carl Zeiss Smt Ag High-na projection objective with aspheric lens surfaces
JPWO2007086220A1 (ja) 2006-01-30 2009-06-18 株式会社ニコン 反射屈折結像光学系、露光装置、およびデバイスの製造方法
US8930758B2 (en) 2012-01-16 2015-01-06 Siemens Aktiengesellschaft Automated testing of mechatronic systems

Similar Documents

Publication Publication Date Title
JP2007529762A5 (enExample)
JP5102492B2 (ja) 結晶素子を有するマイクロリソグラフィー投影用対物レンズ
KR101511815B1 (ko) 편광기
CN102207691B (zh) 微光刻曝光系统的光学系统
JP2004526331A5 (enExample)
TWI483085B (zh) 微影投影曝光裝置的光學系統
WO2005071718A1 (ja) 光学系、露光装置、および露光方法
US20080088816A1 (en) Microlithograph system
JP2004525527A5 (enExample)
JP2004535603A (ja) 結晶レンズを備えた対物レンズにおける複屈折の補正
JP2006113533A5 (enExample)
WO2003088330A1 (en) Projection optical system, exposure system and exposure method
JP2009508170A5 (enExample)
WO2005010963A1 (ja) 照明光学装置、露光装置および露光方法
US20040218271A1 (en) Retardation element made from cubic crystal and an optical system therewith
JP2005509184A (ja) 立方晶により製作されるリターデーション素子と該素子を有する光学系
JP2008519433A5 (enExample)
US9411245B2 (en) Polarization-influencing optical arrangement, in particular in a microlithographic projection exposure apparatus
JP5566501B2 (ja) 特にマイクロリソグラフィ投影露光装置の光学系
TWI474134B (zh) 微影投影曝光設備的光學系統
TWI425245B (zh) 微影成像投影曝光裝置之投影物鏡
KR101190438B1 (ko) 마이크로 리소그라피 투영노출장치의 광학장치
JPH11316455A (ja) 結晶基板材料を含むレチクル
JP2008532273A5 (enExample)
JP2007258575A5 (enExample)