JP2006523036A5 - - Google Patents

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Publication number
JP2006523036A5
JP2006523036A5 JP2006509808A JP2006509808A JP2006523036A5 JP 2006523036 A5 JP2006523036 A5 JP 2006523036A5 JP 2006509808 A JP2006509808 A JP 2006509808A JP 2006509808 A JP2006509808 A JP 2006509808A JP 2006523036 A5 JP2006523036 A5 JP 2006523036A5
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JP
Japan
Prior art keywords
metal
insulating layer
power supply
conductor
chip
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JP2006509808A
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English (en)
Japanese (ja)
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JP2006523036A (ja
JP4647594B2 (ja
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Priority claimed from US10/409,766 external-priority patent/US6717270B1/en
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Publication of JP2006523036A publication Critical patent/JP2006523036A/ja
Publication of JP2006523036A5 publication Critical patent/JP2006523036A5/ja
Application granted granted Critical
Publication of JP4647594B2 publication Critical patent/JP4647594B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2006509808A 2003-04-09 2004-04-08 集積回路チップのｉ／ｏセル Expired - Fee Related JP4647594B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/409,766 US6717270B1 (en) 2003-04-09 2003-04-09 Integrated circuit die I/O cells
PCT/US2004/010813 WO2004093188A1 (en) 2003-04-09 2004-04-08 Integrated circuit die i/o cells

Publications (3)

Publication Number Publication Date
JP2006523036A JP2006523036A (ja) 2006-10-05
JP2006523036A5 true JP2006523036A5 (enExample) 2007-06-07
JP4647594B2 JP4647594B2 (ja) 2011-03-09

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Family Applications (1)

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JP2006509808A Expired - Fee Related JP4647594B2 (ja) 2003-04-09 2004-04-08 集積回路チップのｉ／ｏセル

Country Status (6)

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US (1) US6717270B1 (enExample)
JP (1) JP4647594B2 (enExample)
KR (1) KR101054665B1 (enExample)
CN (1) CN100435326C (enExample)
TW (1) TWI337773B (enExample)
WO (1) WO2004093188A1 (enExample)

Families Citing this family (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4170103B2 (ja) * 2003-01-30 2008-10-22 Ｎｅｃエレクトロニクス株式会社 半導体装置、および半導体装置の製造方法
TWI220565B (en) * 2003-02-26 2004-08-21 Realtek Semiconductor Corp Structure of IC bond pad and its formation method
JP4357862B2 (ja) * 2003-04-09 2009-11-04 シャープ株式会社 半導体装置
US7566964B2 (en) * 2003-04-10 2009-07-28 Agere Systems Inc. Aluminum pad power bus and signal routing for integrated circuit devices utilizing copper technology interconnect structures
JPWO2004093191A1 (ja) * 2003-04-11 2006-07-06 富士通株式会社 半導体装置
WO2004093184A1 (ja) 2003-04-15 2004-10-28 Fujitsu Limited 半導体装置及びその製造方法
US20050082677A1 (en) * 2003-10-15 2005-04-21 Su-Chen Fan Interconnect structure for integrated circuits
JP4242336B2 (ja) * 2004-02-05 2009-03-25 パナソニック株式会社 半導体装置
US7208837B2 (en) * 2004-02-10 2007-04-24 United Microelectronics Corp. Semiconductor chip capable of implementing wire bonding over active circuits
US6900541B1 (en) * 2004-02-10 2005-05-31 United Microelectronics Corp. Semiconductor chip capable of implementing wire bonding over active circuits
US7071561B2 (en) * 2004-06-08 2006-07-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture thereof with two or more bond pad connections for each input/output cell
US20060022353A1 (en) * 2004-07-30 2006-02-02 Ajuria Sergio A Probe pad arrangement for an integrated circuit and method of forming
US20060060845A1 (en) * 2004-09-20 2006-03-23 Narahari Ramanuja Bond pad redistribution layer for thru semiconductor vias and probe touchdown
CN100362657C (zh) * 2004-12-22 2008-01-16 中芯国际集成电路制造(上海)有限公司 半导体集成电路的内连焊盘
JP2006229186A (ja) * 2005-01-18 2006-08-31 Matsushita Electric Ind Co Ltd 半導体集積回路およびその製造方法
DE102006008454B4 (de) * 2005-02-21 2011-12-22 Samsung Electronics Co., Ltd. Kontaktstellenstruktur, Kontaktstellen-Layoutstruktur, Halbleiterbauelement und Kontaktstellen-Layoutverfahren
JP4449824B2 (ja) * 2005-06-01 2010-04-14 カシオ計算機株式会社 半導体装置およびその実装構造
KR100610025B1 (ko) * 2005-07-12 2006-08-08 삼성전자주식회사 멀티 패드 레이아웃구조 및 그를 구비하는 반도체 장치
JP4671814B2 (ja) 2005-09-02 2011-04-20 パナソニック株式会社 半導体装置
US7531903B2 (en) * 2005-09-02 2009-05-12 United Microelectronics Corp. Interconnection structure used in a pad region of a semiconductor substrate
US8319343B2 (en) 2005-09-21 2012-11-27 Agere Systems Llc Routing under bond pad for the replacement of an interconnect layer
US7952206B2 (en) * 2005-09-27 2011-05-31 Agere Systems Inc. Solder bump structure for flip chip semiconductor devices and method of manufacture therefore
US7741716B1 (en) * 2005-11-08 2010-06-22 Altera Corporation Integrated circuit bond pad structures
US8552560B2 (en) * 2005-11-18 2013-10-08 Lsi Corporation Alternate pad structures/passivation inegration schemes to reduce or eliminate IMC cracking in post wire bonded dies during Cu/Low-K BEOL processing
JP4995455B2 (ja) 2005-11-30 2012-08-08 ルネサスエレクトロニクス株式会社 半導体装置
US20070194451A1 (en) * 2006-02-22 2007-08-23 Chih-Hung Wu Apparatus for integrated input/output circuit and verification method thereof
KR100834828B1 (ko) * 2006-03-17 2008-06-04 삼성전자주식회사 정전방전 특성을 강화한 반도체 장치
US7808117B2 (en) * 2006-05-16 2010-10-05 Freescale Semiconductor, Inc. Integrated circuit having pads and input/output (I/O) cells
KR20090025239A (ko) * 2006-05-16 2009-03-10 프리스케일 세미컨덕터, 인크. 패드 및 입출력(ｉ／ｏ) 셀을 갖는 집적 회로
JP5208936B2 (ja) * 2006-08-01 2013-06-12 フリースケール セミコンダクター インコーポレイテッド チップ製造および設計における改良のための方法および装置
US7589945B2 (en) * 2006-08-31 2009-09-15 Freescale Semiconductor, Inc. Distributed electrostatic discharge protection circuit with varying clamp size
US7749885B2 (en) 2006-12-15 2010-07-06 Micron Technology, Inc. Semiconductor processing methods, methods of forming contact pads, and methods of forming electrical connections between metal-containing layers
JP2008198916A (ja) * 2007-02-15 2008-08-28 Spansion Llc 半導体装置及びその製造方法
US7847404B1 (en) * 2007-03-29 2010-12-07 Integrated Device Technology, Inc. Circuit board assembly and packaged integrated circuit device with power and ground channels
US20090051050A1 (en) * 2007-08-24 2009-02-26 Actel Corporation corner i/o pad density
US7777998B2 (en) 2007-09-10 2010-08-17 Freescale Semiconductor, Inc. Electrostatic discharge circuit and method therefor
US7888257B2 (en) * 2007-10-10 2011-02-15 Agere Systems Inc. Integrated circuit package including wire bonds
EP2195837A1 (en) * 2007-10-31 2010-06-16 Agere Systems Inc. Bond pad support structure for semiconductor device
JP4585564B2 (ja) * 2007-12-13 2010-11-24 ルネサスエレクトロニクス株式会社 半導体装置
US9379059B2 (en) 2008-03-21 2016-06-28 Mediatek Inc. Power and ground routing of integrated circuit devices with improved IR drop and chip performance
US7821038B2 (en) * 2008-03-21 2010-10-26 Mediatek Inc. Power and ground routing of integrated circuit devices with improved IR drop and chip performance
US8816486B2 (en) * 2008-05-12 2014-08-26 Taiwan Semiconductor Manufacturing Co., Ltd. Pad structure for 3D integrated circuit
US20090294977A1 (en) * 2008-06-02 2009-12-03 Che-Yuan Jao Semiconductor die and bond pad arrangement method thereof
US7932744B1 (en) 2008-06-19 2011-04-26 Actel Corporation Staggered I/O groups for integrated circuits
JP5467736B2 (ja) * 2008-06-23 2014-04-09 ルネサスエレクトロニクス株式会社 半導体集積回路
US20100148218A1 (en) * 2008-12-10 2010-06-17 Panasonic Corporation Semiconductor integrated circuit device and method for designing the same
JP5331891B2 (ja) * 2009-09-21 2013-10-30 株式会社東芝 半導体装置
CN101697344B (zh) * 2009-10-28 2012-10-31 上海宏力半导体制造有限公司 一种降低芯片电源焊盘键合引线上电流的方法
CN102136462B (zh) * 2010-01-27 2013-10-30 晨星软件研发(深圳)有限公司 通用输出入单元及相关装置与方法
US20110186899A1 (en) * 2010-02-03 2011-08-04 Polymer Vision Limited Semiconductor device with a variable integrated circuit chip bump pitch
US8549447B2 (en) * 2010-04-24 2013-10-01 Robert Eisenstadt Integrated circuits with multiple I/O regions
JP5485132B2 (ja) * 2010-12-28 2014-05-07 パナソニック株式会社 半導体装置
US8982574B2 (en) * 2010-12-29 2015-03-17 Stmicroelectronics S.R.L. Contact and contactless differential I/O pads for chip-to-chip communication and wireless probing
US8549257B2 (en) * 2011-01-10 2013-10-01 Arm Limited Area efficient arrangement of interface devices within an integrated circuit
US20120241972A1 (en) * 2011-03-24 2012-09-27 Taiwan Semiconductor Manufacturing Company, Ltd. Layout scheme for an input output cell
US8896124B2 (en) * 2011-04-04 2014-11-25 Nxp B.V. Via network structures and method therefor
JP2013206905A (ja) * 2012-03-27 2013-10-07 Renesas Electronics Corp 半導体装置およびその製造方法
US20130320522A1 (en) * 2012-05-30 2013-12-05 Taiwan Semiconductor Manufacturing Company, Ltd. Re-distribution Layer Via Structure and Method of Making Same
JP5968713B2 (ja) * 2012-07-30 2016-08-10 ルネサスエレクトロニクス株式会社 半導体装置
KR20150101762A (ko) * 2014-02-27 2015-09-04 에스케이하이닉스 주식회사 반도체 장치
CN107112280B (zh) * 2014-10-24 2020-08-04 株式会社索思未来 半导体集成电路装置
JP2016139711A (ja) * 2015-01-28 2016-08-04 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US9922947B2 (en) * 2016-04-28 2018-03-20 Stmicroelectronics S.R.L. Bonding pad structure over active circuitry
US10410934B2 (en) * 2017-12-07 2019-09-10 Micron Technology, Inc. Apparatuses having an interconnect extending from an upper conductive structure, through a hole in another conductive structure, and to an underlying structure
JP2019169525A (ja) * 2018-03-22 2019-10-03 東芝メモリ株式会社 半導体記憶装置
US20200006122A1 (en) * 2018-06-27 2020-01-02 Qualcomm Incorporated Integrated circuits (ics) made using extreme ultraviolet (euv) patterning and methods for fabricating such ics

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2584259A1 (fr) * 1985-06-26 1987-01-02 Gen Ceramics Inc Procede de fabrication d'un substrat ceramique multicouche comportant un circuit et le substrat ainsi obtenu
JPH03148132A (ja) * 1989-11-04 1991-06-24 Ricoh Co Ltd スタンダードセル方式の半導体集積回路装置
JP2900555B2 (ja) * 1990-07-30 1999-06-02 日本電気株式会社 半導体集積回路
WO1995028005A2 (en) 1994-04-07 1995-10-19 Vlsi Technology, Inc. Staggered pad array
US5514892A (en) 1994-09-30 1996-05-07 Motorola, Inc. Electrostatic discharge protection device
JP3493118B2 (ja) 1997-07-25 2004-02-03 沖電気工業株式会社 半導体素子及び半導体装置
JP3022819B2 (ja) 1997-08-27 2000-03-21 日本電気アイシーマイコンシステム株式会社 半導体集積回路装置
JP3259763B2 (ja) * 1997-11-14 2002-02-25 日本電気株式会社 半導体ｌｓｉ
EP0923126A1 (en) * 1997-12-05 1999-06-16 STMicroelectronics S.r.l. Integrated electronic device comprising a mechanical stress protection structure
US6124198A (en) * 1998-04-22 2000-09-26 Cvc, Inc. Ultra high-speed chip interconnect using free-space dielectrics
US6242814B1 (en) 1998-07-31 2001-06-05 Lsi Logic Corporation Universal I/O pad structure for in-line or staggered wire bonding or arrayed flip-chip assembly
US6174803B1 (en) * 1998-09-16 2001-01-16 Vsli Technology Integrated circuit device interconnection techniques
JP2000252363A (ja) * 1999-03-01 2000-09-14 Kawasaki Steel Corp 半導体集積回路
JP4037561B2 (ja) * 1999-06-28 2008-01-23 株式会社東芝 半導体装置の製造方法
US6329278B1 (en) 2000-01-03 2001-12-11 Lsi Logic Corporation Multiple row wire bonding with ball bonds of outer bond pads bonded on the leads
US6291898B1 (en) 2000-03-27 2001-09-18 Advanced Semiconductor Engineering, Inc. Ball grid array package
US6476506B1 (en) 2001-09-28 2002-11-05 Motorola, Inc. Packaged semiconductor with multiple rows of bond pads and method therefor
JP2003289104A (ja) * 2002-03-28 2003-10-10 Ricoh Co Ltd 半導体装置の保護回路及び半導体装置
KR100476900B1 (ko) * 2002-05-22 2005-03-18 삼성전자주식회사 테스트 소자 그룹 회로를 포함하는 반도체 집적 회로 장치

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