CN101697344B - 一种降低芯片电源焊盘键合引线上电流的方法 - Google Patents
一种降低芯片电源焊盘键合引线上电流的方法 Download PDFInfo
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- CN101697344B CN101697344B CN2009101978044A CN200910197804A CN101697344B CN 101697344 B CN101697344 B CN 101697344B CN 2009101978044 A CN2009101978044 A CN 2009101978044A CN 200910197804 A CN200910197804 A CN 200910197804A CN 101697344 B CN101697344 B CN 101697344B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48092—Helix
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
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Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009101978044A CN101697344B (zh) | 2009-10-28 | 2009-10-28 | 一种降低芯片电源焊盘键合引线上电流的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009101978044A CN101697344B (zh) | 2009-10-28 | 2009-10-28 | 一种降低芯片电源焊盘键合引线上电流的方法 |
Publications (2)
Publication Number | Publication Date |
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CN101697344A CN101697344A (zh) | 2010-04-21 |
CN101697344B true CN101697344B (zh) | 2012-10-31 |
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Application Number | Title | Priority Date | Filing Date |
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CN2009101978044A Active CN101697344B (zh) | 2009-10-28 | 2009-10-28 | 一种降低芯片电源焊盘键合引线上电流的方法 |
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CN (1) | CN101697344B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8659123B2 (en) * | 2011-09-28 | 2014-02-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal pad structures in dies |
CN112770477B (zh) * | 2019-10-21 | 2022-09-23 | 华为技术有限公司 | 一种电路板组件和电子设备 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5477079A (en) * | 1990-11-13 | 1995-12-19 | Kabushiki Kaisha Toshiba | Power source noise suppressing type semiconductor device |
EP0758798A2 (en) * | 1995-08-14 | 1997-02-19 | Samsung Electronics Co., Ltd. | Semiconductor device with enhanced electrical characteristic |
CN1771598A (zh) * | 2003-04-09 | 2006-05-10 | 飞思卡尔半导体公司 | 集成电路芯片i/o单元 |
CN101174626A (zh) * | 2006-10-31 | 2008-05-07 | 松下电器产业株式会社 | 半导体集成电路及其制造方法 |
-
2009
- 2009-10-28 CN CN2009101978044A patent/CN101697344B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5477079A (en) * | 1990-11-13 | 1995-12-19 | Kabushiki Kaisha Toshiba | Power source noise suppressing type semiconductor device |
EP0758798A2 (en) * | 1995-08-14 | 1997-02-19 | Samsung Electronics Co., Ltd. | Semiconductor device with enhanced electrical characteristic |
CN1771598A (zh) * | 2003-04-09 | 2006-05-10 | 飞思卡尔半导体公司 | 集成电路芯片i/o单元 |
CN101174626A (zh) * | 2006-10-31 | 2008-05-07 | 松下电器产业株式会社 | 半导体集成电路及其制造方法 |
Non-Patent Citations (1)
Title |
---|
JP特开平5-226568A 1993.09.03 |
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CN101697344A (zh) | 2010-04-21 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140514 |
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Effective date of registration: 20140514 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Zhangjiang hi tech Park No. 818 Patentee before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |