JP2005100660A - 強誘電体膜、強誘電体メモリ装置、圧電素子、半導体素子、圧電アクチュエータ、液体噴射ヘッド及びプリンタ - Google Patents
強誘電体膜、強誘電体メモリ装置、圧電素子、半導体素子、圧電アクチュエータ、液体噴射ヘッド及びプリンタ Download PDFInfo
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- JP2005100660A JP2005100660A JP2003302900A JP2003302900A JP2005100660A JP 2005100660 A JP2005100660 A JP 2005100660A JP 2003302900 A JP2003302900 A JP 2003302900A JP 2003302900 A JP2003302900 A JP 2003302900A JP 2005100660 A JP2005100660 A JP 2005100660A
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
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- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
- H01L28/57—Capacitors with a dielectric comprising a perovskite structure material comprising a barrier layer to prevent diffusion of hydrogen or oxygen
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- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/077—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
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Abstract
【解決手段】 本発明の強誘電体膜101は、AB1−xNbxO3の一般式で示され、A元素は、少なくともPbからなり、B元素は、Zr、Ti、V、W及びHfのうち、少なくとも一つ以上からなり、0.05≦x<1の範囲でNbを含む酸化物から形成されている。
【選択図】 図1
Description
図1は、本発明の実施形態に係る強誘電体膜101を用いた強誘電体キャパシタ100を模式的に示す断面図である。
次に、PbZr0.2Ti0.8Nb0.2薄膜の疲労特性、及びスタティックインプリントを測定したところ、図11(A)及び図11(B)に示すように、非常に良好であった。特に、図11(A)に示す疲労特性は、上下電極にPtを用いているにもかかわらず、非常に良好である。
本例ではPbZr0.4Ti0.6O3強誘電体膜を作製した。
図32(A)及び図32(B)は、本発明の実施形態における、単純マトリクス型の強誘電体メモリ装置300の構成を示した図である。図3(A)はその平面図、図32(B)は図32(A)のA−A線に沿った断面図である。強誘電体メモリ装置300は、図32(A)及び図32(B)に示すように、基板308上に形成された所定の数配列されたワード線301〜303と、所定の数配列されたビット線304〜306とを有する。ワード線301〜303とビット線304〜306との間には、上記実施の形態において説明したPZTNからなる強誘電体膜307が挿入され、ワード線301〜303とビット線304〜306との交差領域に強誘電体キャパシタが形成される。
以下に、本発明の実施形態における、インクジェット式記録ヘッドについて詳細に説明する。
図32(A)及び図32(B)は、本発明の実施形態における、単純マトリクス型の強誘電体メモリ装置300の構成を示した図である。図32(A)はその平面図、図32(B)は図32(A)のA−A線に沿った断面図である。強誘電体メモリ装置300は、図32(A)及び図32(B)に示すように、基板308上に形成された所定の数配列されたワード線301〜303と、所定の数配列されたビット線304〜306とを有する。ワード線301〜303とビット線304〜306との間には、上記実施の形態において説明したPZTNからなる強誘電体膜307が挿入され、ワード線301〜303とビット線304〜306との交差領域に強誘電体キャパシタが形成される。
電極または第2電極)410、強誘電体相と常誘電体相とを含む強誘電体膜411、およ
び強誘電体膜411の上に形成されてビット線またはワード線となる上部電極(第2電極
または第1電極)412から構成される。
Claims (21)
- AB1−xNbxO3の一般式で示され、
A元素は、少なくともPbからなり、
B元素は、Zr、Ti、V、W及びHfのうち、少なくとも一つ以上からなり、
0.05≦x<1の範囲でNbを含む、強誘電体膜。 - 請求項1において、
A元素は、Pb1−yLnyからなり、
Lnは、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb及びLuのうち、少なくとも一つ以上からなり、かつ0<y≦0.2の範囲である、強誘電体膜。 - (Pb1−yAy)(B1−xNbx)O3の一般式で示され、
A元素は、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb及びLuのうち、少なくとも一つ以上からなり、
B元素は、Zr、Ti、V、W及びHfのうち、一つ以上からなり、
0.05≦x<1の範囲でNbを含む、強誘電体膜。 - 請求項1〜3のいずれかにおいて、
0.1≦x≦0.3の範囲でNbを含む、強誘電体膜。 - PZT系強誘電体膜において、
Zr組成よりもTi組成が多く、かつTi組成のうち、2.5モル%以上40モル%以下をNbに置換した、強誘電体膜。 - 請求項5において、
Ti組成のうち、10モル%以上30モル%以下をNbに置換した、強誘電体膜。 - 請求項5または6において、
前記PZT系強誘電体膜は、正方晶系および稜面体晶系の少なくとも一方の結晶構造を有する、強誘電体膜。 - 請求項5〜7のいずれかにおいて、
0.5モル%以上のSi或いはSi及びGeを含む、強誘電体膜。 - 請求項5〜8のいずれかにおいて、
0.5モル%以上、5モル%未満のSi或いはSi及びGeを含む、強誘電体膜。 - ABO3の一般式で表され、Aサイトの構成元素としてPbを含み、Bサイトの構成元素として少なくともZrおよびTiを含むPZT系強誘電体膜において、AサイトのPb欠損量が前記ABO3の化学量論的組成に対して多くとも20モル%以下である、強誘電体膜。
- 請求項10において、
前記AサイトのPb欠損量の2倍に相当する組成比でBサイトにNbを含む、強誘電体膜。 - 請求項10または11において、
BサイトにおけるTi組成がZr組成よりも高く、かつ稜面体晶系の結晶構造を有する、強誘電体膜。 - 請求項5〜12のいずれかにおいて、
ゾルゲル溶液を用いて形成される、強誘電体膜。 - 請求項13に記載された強誘電体膜の製造方法であって、
前記ゾルゲル溶液として、少なくともPbZrO3用ゾルゲル溶液、PbTiO3用ゾルゲル溶液、およびPbNbO3用ゾルゲル溶液を混合したものを用いる、強誘電体膜の製造方法。 - 請求項14において、
前記ゾルゲル溶液として、さらにPbSiO3用ゾルゲル溶液を混合したものを用いる、強誘電体膜の製造方法。 - 請求項10〜12に記載された強誘電体膜の製造方法であって、
Aサイトの構成元素であるPbの化学量論的組成を1とした場合に、Pbが0.9〜1.2の範囲で含まれるゾルゲル溶液を用いて形成する、強誘電体膜の製造方法。 - 請求項14〜16のいずれかにおいて、
前記PZT系強誘電体膜を、白金系金属からなる金属膜上に形成することを含む、強誘電体膜の製造方法。 - 請求項17において、
前記白金系金属は、PtおよびIrの少なくともいずれか一つである、強誘電体膜の製造方法。 - 請求項1〜13記載の強誘電体膜を用いた、強誘電体メモリ。
- 請求項1〜13に記載の強誘電体膜を用いた、圧電素子。
- 請求項1〜13に記載の強誘電体膜を用いた、半導体素子。
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US10/690,021 US7255941B2 (en) | 2002-10-24 | 2003-10-22 | Ferroelectric film, ferroelectric capacitor, ferroelectric memory, piezoelectric element, semiconductor element, method of manufacturing ferroelectric film, and method of manufacturing ferroelectric capacitor |
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KR1020067024280A KR100813348B1 (ko) | 2002-10-24 | 2003-10-23 | 강유전체 캐패시터, 강유전체 메모리 장치, 압전 소자,압전 액츄에이터, 액체 분사 헤드의 제조 방법 |
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- 2003-10-22 US US10/690,021 patent/US7255941B2/en not_active Expired - Fee Related
- 2003-10-23 KR KR1020067024280A patent/KR100813348B1/ko not_active IP Right Cessation
- 2003-10-23 KR KR1020067024275A patent/KR100740742B1/ko not_active IP Right Cessation
- 2003-10-23 KR KR20047018844A patent/KR100810858B1/ko not_active IP Right Cessation
- 2003-10-23 KR KR1020067024276A patent/KR100738303B1/ko not_active IP Right Cessation
- 2003-10-23 WO PCT/JP2003/013556 patent/WO2004038733A1/ja active Application Filing
- 2003-10-23 EP EP20030758823 patent/EP1555678B1/en not_active Expired - Fee Related
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2005
- 2005-11-25 US US11/286,286 patent/US7371473B2/en not_active Expired - Fee Related
- 2005-11-25 US US11/286,284 patent/US20060088731A1/en not_active Abandoned
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Also Published As
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KR20050069933A (ko) | 2005-07-05 |
US20040214352A1 (en) | 2004-10-28 |
US20060088731A1 (en) | 2006-04-27 |
KR100810858B1 (ko) | 2008-03-06 |
EP1555678B1 (en) | 2013-08-21 |
KR20060127274A (ko) | 2006-12-11 |
KR20070004107A (ko) | 2007-01-05 |
EP1555678A4 (en) | 2007-05-23 |
EP1555678A1 (en) | 2005-07-20 |
KR100738303B1 (ko) | 2007-07-12 |
US7371473B2 (en) | 2008-05-13 |
US7255941B2 (en) | 2007-08-14 |
WO2004038733A1 (ja) | 2004-05-06 |
KR100740742B1 (ko) | 2007-07-19 |
KR20060128061A (ko) | 2006-12-13 |
KR100813348B1 (ko) | 2008-03-12 |
JP3791614B2 (ja) | 2006-06-28 |
US20060083933A1 (en) | 2006-04-20 |
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