JP4396857B2 - 絶縁性ターゲット材料の製造方法 - Google Patents
絶縁性ターゲット材料の製造方法 Download PDFInfo
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- JP4396857B2 JP4396857B2 JP2005249632A JP2005249632A JP4396857B2 JP 4396857 B2 JP4396857 B2 JP 4396857B2 JP 2005249632 A JP2005249632 A JP 2005249632A JP 2005249632 A JP2005249632 A JP 2005249632A JP 4396857 B2 JP4396857 B2 JP 4396857B2
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02194—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing more than one metal element
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
- C04B35/49—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates
- C04B35/491—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates based on lead zirconates and lead titanates, e.g. PZT
- C04B35/493—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates based on lead zirconates and lead titanates, e.g. PZT containing also other lead compounds
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
- C04B35/497—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates based on solid solutions with lead oxides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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Description
一般式AB1−xCxO3で表される絶縁性複合酸化物膜を得るための絶縁性ターゲット材料であって、
A元素は少なくともPbからなり、
B元素はZr、Ti、V、WおよびHfの少なくとも一つからなり、
C元素は、NbおよびTaの少なくとも一つからなる。
前記B元素は、ZrおよびTiであり、
前記C元素は、Nbであることができる。
0.1≦x≦0.3の範囲でNbを含むことができる。
さらに、0.5モル%以上のSiおよびGeの少なくとも一方を含むことができる。
一般式AB1−xCxO3で表される絶縁性複合酸化物膜を得るための絶縁性ターゲット材料の製造方法であって、A元素は少なくともPbからなり、B元素はZr、Ti、V、WおよびHfの少なくとも一つからなり、C元素は、NbおよびTaの少なくとも一つからなり、
一般式AB1−xCxO3で表される絶縁性複合酸化物からなる第1粉体を形成する工程と、
前記第1粉体と、一般式AB1−xCxO3で表される絶縁性複合酸化物を形成するための前駆体を含む第1前駆体組成物とを共存させて、水熱合成法によって、前記第1粉体の粒子の周りに絶縁性複合酸化物を成長させて第2粉体を形成する工程と、を含む。
前記第1前駆体組成物は、少なくとも前記B元素および前記C元素を含み、かつ一部にエステル結合を有する前駆体を含むことができる。
前記前駆体は、さらに、SiおよびGeの少なくとも一方を含むことができる。
前記第1前駆体組成物は、前記前駆体が塩基性溶媒に溶解されたものであることができる。
前記第1粉体は、第2前駆体組成物を加熱下で噴霧することによって形成され、該第2前駆体組成物は、少なくとも前記B元素および前記C元素を含み、かつ一部にエステル結合を有する前駆体を含むことができる。
前記第2粉体と、Si原料およびGe原料の少なくとも一方を含む溶液と、を混合した後、前記第2粉体を回収して第3粉体を得る工程と、
前記第3粉体を圧着して成形する工程と、
をさらに含むことができる。
前記溶液は、前記Si原料および前記Ge原料の少なくとも一方を、2ないし10モル%含むことができる。
本発明の絶縁性ターゲット材料を用いて、RFスパッタ法によって形成された絶縁性複合酸化物膜であって、一般式AB1−xCxO3で表され、かつ、SiおよびGeの少なくとも一方を含む。
基体と、
前記基体の上方に形成された、請求項12に記載の絶縁性複合酸化物膜と、
を含む。
本発明の実施形態にかかる絶縁性ターゲット材料は、一般式AB1−xCxO3で表される絶縁性複合酸化物膜を得るための絶縁性ターゲット材料であって、A元素、B元素およびC元素を含み、A元素は少なくともPbからなり、B元素はZr、Ti、V、WおよびHfの少なくとも一つからなり、C元素は、NbおよびTaの少なくとも一つからなることができる。
本発明の実施形態にかかる絶縁性ターゲット材料は、以下の方法によって形成することができる。この絶縁性ターゲット材料は、一般式AB1−xCxO3で表される絶縁性複合酸化物膜を得るための絶縁性ターゲット材料の製造方法であって、A元素は少なくともPbからなり、B元素はZr、Ti、V、WおよびHfの少なくとも一つからなり、C元素は、NbおよびTaの少なくとも一つからなる。
まず、一般式AB1−xCxO3で表される絶縁性複合酸化物からなる第1粉体を形成する。第1粉体は、一般式AB1−xCxO3で表される絶縁性複合酸化物を得るための前駆体組成物を、加熱下で噴霧する方法、例えばスプレイドライ法などによって形成することができる(工程S1)。前駆体組成物を加熱下で噴霧することにより、前駆体組成物の溶媒を蒸発させながら、第1粉体を形成できる。したがって、加熱温度は溶媒が蒸発できればよく、特に限定されないが、例えば80ないし120℃とすることができる。
工程(1)で得られた第1粉体と、一般式AB1−xCxO3で表される絶縁性複合酸化物を形成するための前駆体を含む前駆体組成物が共存した状態で、水熱合成法によって、第1粉体の粒子の周りに絶縁性複合酸化物を成長させて、第2粉体を形成する(工程S2)。
工程(2)で得られた第2粉体と、Si原料およびGe原料の少なくとも一方(Si原料および/またはGe原料)を含む溶液と、を混合する。その後、前記第2粉体を濾過等で回収して第3粉体を得る(工程S3)。第3粉体は、第2粉体と、Si原料および/またはGe原料を含んでいる。
工程(3)で得られた第3粉体を型にいれて圧着して所望の形に成形することで絶縁性ターゲット材料が得られる(工程S4)。例えば、第3粉体を型に入れ、真空ホットプレス法で成形することができる。成形は、例えば400ないし500℃で行うことができる。このようにして本実施形態の絶縁性ターゲット材料を得ることができる。
得られた絶縁性ターゲット材料は、必要に応じて、湿式研磨によって表面を研磨することができる。
次に、絶縁性ターゲット材料の製造で用いられる前駆体組成物およびその製造方法について述べる。
本発明で用いられる前駆体組成物は、絶縁性複合酸化物膜からなる第1粉体および第2粉体の形成に用いられる。ここで、絶縁性複合酸化物膜は、一般式AB1−xCxO3で示され、A元素は少なくともPbからなり、B元素はZr、Ti、V、WおよびHfの少なくとも一つからなり、C元素は、NbおよびTaの少なくとも一つからなることができる。そして、本実施形態では、前駆体は、少なくともB元素およびC元素を含み、かつ一部にエステル結合を有する。
プロパノール(プロピルアルコール)として、1−プロパノール(沸点97.4℃)、2−プロパノール(沸点82.7℃)、
ブタノール(ブチルアルコール)として、1−ブタノール(沸点117℃)、2−ブタノール(沸点100℃)、2−メチル−1−プロパノール(沸点108℃)、2−メチル−2−プロパノール(融点25.4℃,沸点83℃)、
ペンタノール(アミルアルコール)として、1−ペンタノール(沸点137℃)、3−メチル−1−ブタノール(沸点131℃)、2−メチル−1−ブタノール(沸点128℃)、2,2ジメチル−1−プロパノール(沸点113℃)、2−ペンタノール(沸点119℃)、3−メチル−2−ブタノール(沸点112.5℃)、3−ペンタノール(沸点117℃)、2−メチル−2−ブタノール(沸点102℃)、
多価アルコール類;
エチレングリコール(融点−11.5℃,沸点197.5℃)、グリセリン(融点17℃,沸点290℃)、
塩基性アルコール類;
ジメチルアミノエタノール、ジエチルアミノエタノール、ジメチルアミノメタノール、ジエチルアミノメタノール。
本実施形態で用いられる前駆体組成物の製造方法は、少なくとも前記B元素および前記C元素を含むゾルゲル原料であって、金属アルコキシドの加水分解・縮合物を含むゾルゲル原料と、ポリカルボン酸またはポリカルボン酸エステルと、有機溶媒とを混合し、前記ポリカルボン酸または前記ポリカルボン酸エステルに由来するポリカルボン酸と金属アルコキシドとのエステル化によるエステル結合を有する前駆体を形成することを含む。
本発明にかかる絶縁性ターゲット材料を用いて、RFスパッタを行うことにより、一般式AB1−xCxO3で表される絶縁性複合酸化物膜を得ることができる。この絶縁性複合酸化物膜には、SiおよびGeの少なくとも一方、好ましくは少なくともSiが含まれる。一般式AB1−xCxO3で表される絶縁性複合酸化物には、SiおよびGeの少なくとも一方が2ないし10モル%の割合で含まれることができる。
以下、本発明の実施例について述べるが、本発明はこれらに限定されない。
実施例1にかかる絶縁性ターゲット材料は以下のようにして得た。実施例1では、PZTNからなるターゲットを形成した。
まず、PZTNからなる第1粉体を形成する。第1粉体は、PZTNを得るための前駆体組成物を、スプレイドライヤー装置(ビュッヒ社製)を用いて形成した。スプレイドライヤーでは、前駆体組成物を200℃加熱しながら行った。得られた第1粉体の粒径は、約10〜100μmであった。
上記工程(1)で用いた、PZTN複合酸化物を形成するための前駆体組成物に水酸化バリウムを混合してpHを12に調整した溶液を得た。この溶液に上記工程(1)で得られた第1粉体を混合した。ついで、この混合液を密閉し、水熱合成法によって、第1粉体の粒子の周りにPZTN複合酸化物を成長させて、第2粉体を形成した。水熱合成においては、溶液の温度を200℃とし、48時間反応させ、第2粒子を形成した。このようにして得られた複合酸化物の第2粒子を濾過によって分離することにより、第2粉体を得た。
工程(2)で得られた第2粉体と、Siのアルコキシドを5モル%を含む溶液とを混合した。その後、第2粉体を濾過して回収し、第3粉体を得た。第3粉体は、第2粉体と、Siアルコキシドを含んでいる。
工程(3)で得られた第3粉体を型にいれて圧着して所望の形に成形することで絶縁性ターゲット材料を得た。具体的には、第3粉体を型に入れ、真空ホットプレス法で成形した。成形は、400ないし500℃で行った。このようにして本実施例1の絶縁性ターゲット材料を得た。
本発明のデバイスは、基体と、前記基体の上方に形成された、本発明の絶縁性複合酸化物膜と、を含む。また、本発明のデバイスは、本発明の絶縁性複合酸化物膜を有する部品、およびこの部品を有する電子機器を含む。以下に、本発明のデバイスの例を記載する。
次に、本発明の絶縁性複合酸化物膜を含む半導体素子について説明する。本実施形態では、半導体素子の一例である強誘電体キャパシタを含む強誘電体メモリ装置を例に挙げて説明する。
次に、本発明の絶縁性複合酸化物膜を圧電素子に適用した例について説明する。
次に、上述の圧電素子が圧電アクチュエータとして機能しているインクジェット式記録ヘッドおよびこのインクジェット式記録ヘッドを有するインクジェットプリンタについて説明する。以下の説明では、インクジェット式記録ヘッドについて説明した後に、インクジェットプリンタについて説明する。図13は、本実施形態に係るインクジェット式記録ヘッドの概略構成を示す側断面図であり、図14は、このインクジェット式記録ヘッドの分解斜視図であり、通常使用される状態とは上下逆に示したものである。なお、図15には、本実施形態に係るインクジェット式記録ヘッドを有するインクジェットプリンタ700を示す。
図13に示すように、インクジェット式記録ヘッド50は、ヘッド本体(基体)57と、ヘッド本体57上に形成される圧電部54と、を含む。圧電部54には図21に示す圧電素子1が設けられ、圧電素子1は、下部電極3、圧電体膜(強誘電体膜)4および上部電極5が順に積層して構成されている。圧電体膜4は、本発明の絶縁性複合酸化物膜を用いて形成された膜である。インクジェット式記録ヘッドにおいて、圧電部54は、圧電アクチュエータとして機能する。
次に、本発明の絶縁性複合酸化物膜を適用した表面弾性波素子の一例について、図面を参照しながら説明する。図16は、本実施形態に係る表面弾性波素子300を模式的に示す断面図である。
次に、本発明の絶縁性複合酸化物膜を適用した周波数フィルタの一例について、図面を参照しながら説明する。図17は、本実施形態の周波数フィルタを模式的に示す図である。
次に、本発明の絶縁性複合酸化物膜を適用した発振器の一例について、図面を参照しながら説明する。図18は、本実施形態の発振器を模式的に示す図である。
6.7.1.次に、本発明を適用した第7の実施形態に係る電子回路および電子機器の第1の例について、図面を参照しながら説明する。図22は、本実施形態に係るデバイスの電気的構成を示すブロック図である。電子機器とは、例えば携帯電話機である。
次に、本発明を適用した電子回路および電子機器の第2の例について、図面を参照しながら説明する。本実施形態では、デバイスの例として、リーダライタ2000およびそれを用いた通信システム3000について説明する。図23は、本実施形態に係るリーダライタ2000を用いた通信システム3000を示す図であり、図24は、図23に示す通信システム3000の概略ブロック図である。
Claims (3)
- 一般式AB1−xCxO3で表される絶縁性複合酸化物膜を得るための絶縁性ターゲット材料の製造方法であって、A元素は少なくともPbからなり、B元素はZr、Ti、V、WおよびHfの少なくとも一つからなり、C元素は、NbおよびTaの少なくとも一つからなり、
一般式AB1−xCxO3で表される絶縁性複合酸化物からなる第1粉体を形成する工程と、
前記第1粉体と、一般式AB1−xCxO3で表される絶縁性複合酸化物を形成するための前駆体を含む第1前駆体組成物とを共存させて、水熱合成法によって、前記第1粉体の粒子の周りに絶縁性複合酸化物を成長させて第2粉体を形成する工程と、を含む、絶縁性ターゲット材料の製造方法。 - 請求項1において、
前記第2粉体と、Si原料およびGe原料の少なくとも一方を含む溶液と、を混合した後、前記第2粉体を回収して第3粉体を得る工程と、
前記第3粉体を圧着して成形する工程と、
をさらに含む、絶縁性ターゲット材料の製造方法。 - 請求項2において、
前記溶液は、前記Si原料および前記Ge原料の少なくとも一方を、2ないし10モル%含む、絶縁性ターゲット材料の製造方法。
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JP2005249632A JP4396857B2 (ja) | 2005-08-30 | 2005-08-30 | 絶縁性ターゲット材料の製造方法 |
KR20060082240A KR100810856B1 (ko) | 2005-08-30 | 2006-08-29 | 절연성 타겟 재료, 절연성 타겟 재료의 제조 방법, 절연성복합 산화물막 및 디바이스 |
TW095131792A TW200724701A (en) | 2005-08-30 | 2006-08-29 | Insulating target material, method of manufacturing insulating target material, insulating complex oxide film, and device |
US11/511,663 US7731933B2 (en) | 2005-08-30 | 2006-08-29 | Insulating target material, method of manufacturing insulating target material, insulating complex oxide film, and device |
CNB2006101122834A CN100535177C (zh) | 2005-08-30 | 2006-08-30 | 绝缘性靶材及其制造方法、绝缘性复合氧化膜及装置 |
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JP2005249632A Expired - Fee Related JP4396857B2 (ja) | 2005-08-30 | 2005-08-30 | 絶縁性ターゲット材料の製造方法 |
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US (1) | US7731933B2 (ja) |
EP (1) | EP1760768A1 (ja) |
JP (1) | JP4396857B2 (ja) |
KR (1) | KR100810856B1 (ja) |
CN (1) | CN100535177C (ja) |
TW (1) | TW200724701A (ja) |
Families Citing this family (8)
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JP4462432B2 (ja) * | 2005-08-16 | 2010-05-12 | セイコーエプソン株式会社 | ターゲット |
JP4826744B2 (ja) * | 2006-01-19 | 2011-11-30 | セイコーエプソン株式会社 | 絶縁性ターゲット材料の製造方法 |
JP4591705B2 (ja) * | 2006-01-20 | 2010-12-01 | セイコーエプソン株式会社 | ターゲット材料 |
JP2008266771A (ja) * | 2007-03-22 | 2008-11-06 | Fujifilm Corp | 強誘電体膜とその製造方法、強誘電体素子、及び液体吐出装置 |
EP1973177B8 (en) | 2007-03-22 | 2015-01-21 | FUJIFILM Corporation | Ferroelectric film, process for producing the same, ferroelectric device, and liquid discharge device |
JP2009170695A (ja) * | 2008-01-17 | 2009-07-30 | Seiko Epson Corp | 強誘電体メモリの製造方法 |
JP5585209B2 (ja) * | 2009-05-28 | 2014-09-10 | 株式会社リコー | 電気機械変換素子の製造方法、該製造方法により製造した電気機械変換素子、液滴吐出ヘッド及び液滴吐出装置 |
WO2011089748A1 (ja) * | 2010-01-21 | 2011-07-28 | 株式会社ユーテック | Pbnzt強誘電体膜、ゾルゲル溶液、成膜方法及び強誘電体膜の製造方法 |
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JP3261735B2 (ja) | 1992-06-09 | 2002-03-04 | セイコーエプソン株式会社 | 誘電体素子の製造方法 |
JP3821524B2 (ja) | 1996-12-16 | 2006-09-13 | 株式会社ルネサステクノロジ | 誘電体薄膜形成用スパッタリングターゲット |
JP3682684B2 (ja) * | 1997-10-20 | 2005-08-10 | セイコーエプソン株式会社 | 圧電体薄膜素子の製造方法 |
US5908802A (en) * | 1997-10-30 | 1999-06-01 | Sandia Corporation | Nonaqueous solution synthesis process for preparing oxide powders of lead zirconate titanate and related materials |
JPH11335825A (ja) | 1998-05-20 | 1999-12-07 | Ricoh Co Ltd | スパッタリングターゲット及びその製造方法 |
JP2001138529A (ja) | 1999-03-25 | 2001-05-22 | Seiko Epson Corp | 圧電体の製造方法 |
JP3791614B2 (ja) * | 2002-10-24 | 2006-06-28 | セイコーエプソン株式会社 | 強誘電体膜、強誘電体メモリ装置、圧電素子、半導体素子、圧電アクチュエータ、液体噴射ヘッド及びプリンタ |
JP4171908B2 (ja) | 2004-01-20 | 2008-10-29 | セイコーエプソン株式会社 | 強誘電体膜、強誘電体メモリ、及び圧電素子 |
JP4709544B2 (ja) * | 2004-05-31 | 2011-06-22 | セイコーエプソン株式会社 | 前駆体組成物、前駆体組成物の製造方法、強誘電体膜の製造方法、圧電素子、半導体装置、圧電アクチュエータ、インクジェット式記録ヘッド、およびインクジェットプリンタ |
-
2005
- 2005-08-30 JP JP2005249632A patent/JP4396857B2/ja not_active Expired - Fee Related
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2006
- 2006-08-29 KR KR20060082240A patent/KR100810856B1/ko not_active IP Right Cessation
- 2006-08-29 TW TW095131792A patent/TW200724701A/zh unknown
- 2006-08-29 US US11/511,663 patent/US7731933B2/en not_active Expired - Fee Related
- 2006-08-30 CN CNB2006101122834A patent/CN100535177C/zh not_active Expired - Fee Related
- 2006-08-30 EP EP20060018099 patent/EP1760768A1/en not_active Withdrawn
Also Published As
Publication number | Publication date |
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US7731933B2 (en) | 2010-06-08 |
EP1760768A1 (en) | 2007-03-07 |
CN1924083A (zh) | 2007-03-07 |
TW200724701A (en) | 2007-07-01 |
JP2007063599A (ja) | 2007-03-15 |
US20070045109A1 (en) | 2007-03-01 |
CN100535177C (zh) | 2009-09-02 |
KR20070026099A (ko) | 2007-03-08 |
KR100810856B1 (ko) | 2008-03-06 |
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