JP4709544B2 - 前駆体組成物、前駆体組成物の製造方法、強誘電体膜の製造方法、圧電素子、半導体装置、圧電アクチュエータ、インクジェット式記録ヘッド、およびインクジェットプリンタ - Google Patents
前駆体組成物、前駆体組成物の製造方法、強誘電体膜の製造方法、圧電素子、半導体装置、圧電アクチュエータ、インクジェット式記録ヘッド、およびインクジェットプリンタ Download PDFInfo
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- JP4709544B2 JP4709544B2 JP2004380987A JP2004380987A JP4709544B2 JP 4709544 B2 JP4709544 B2 JP 4709544B2 JP 2004380987 A JP2004380987 A JP 2004380987A JP 2004380987 A JP2004380987 A JP 2004380987A JP 4709544 B2 JP4709544 B2 JP 4709544B2
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- ferroelectric
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- polycarboxylic acid
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- 239000002184 metal Substances 0.000 claims description 38
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 35
- 150000004703 alkoxides Chemical class 0.000 claims description 28
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- 229910052719 titanium Inorganic materials 0.000 claims description 19
- 238000005886 esterification reaction Methods 0.000 claims description 18
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- 230000032050 esterification Effects 0.000 claims description 15
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- 238000002156 mixing Methods 0.000 claims description 4
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical class OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 3
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
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- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 5
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- UPSOBXZLFLJAKK-UHFFFAOYSA-N ozone;tetraethyl silicate Chemical compound [O-][O+]=O.CCO[Si](OCC)(OCC)OCC UPSOBXZLFLJAKK-UHFFFAOYSA-N 0.000 description 4
- 238000003980 solgel method Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
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- QPRQEDXDYOZYLA-UHFFFAOYSA-N 2-methylbutan-1-ol Chemical compound CCC(C)CO QPRQEDXDYOZYLA-UHFFFAOYSA-N 0.000 description 3
- MSXVEPNJUHWQHW-UHFFFAOYSA-N 2-methylbutan-2-ol Chemical compound CCC(C)(C)O MSXVEPNJUHWQHW-UHFFFAOYSA-N 0.000 description 3
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- 238000001069 Raman spectroscopy Methods 0.000 description 3
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- 125000003158 alcohol group Chemical group 0.000 description 3
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- 125000003545 alkoxy group Chemical group 0.000 description 3
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- 241000877463 Lanio Species 0.000 description 2
- JKRZOJADNVOXPM-UHFFFAOYSA-N Oxalic acid dibutyl ester Chemical compound CCCCOC(=O)C(=O)OCCCC JKRZOJADNVOXPM-UHFFFAOYSA-N 0.000 description 2
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- QMKYBPDZANOJGF-UHFFFAOYSA-N benzene-1,3,5-tricarboxylic acid Chemical compound OC(=O)C1=CC(C(O)=O)=CC(C(O)=O)=C1 QMKYBPDZANOJGF-UHFFFAOYSA-N 0.000 description 2
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- 238000004455 differential thermal analysis Methods 0.000 description 2
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
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- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 2
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 2
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- JYVLIDXNZAXMDK-UHFFFAOYSA-N pentan-2-ol Chemical compound CCCC(C)O JYVLIDXNZAXMDK-UHFFFAOYSA-N 0.000 description 2
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- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellitic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 description 2
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- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- MJHNUUNSCNRGJE-UHFFFAOYSA-N trimethyl benzene-1,2,4-tricarboxylate Chemical compound COC(=O)C1=CC=C(C(=O)OC)C(C(=O)OC)=C1 MJHNUUNSCNRGJE-UHFFFAOYSA-N 0.000 description 2
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- 238000006482 condensation reaction Methods 0.000 description 1
- WOSVXXBNNCUXMT-UHFFFAOYSA-N cyclopentane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1CC(C(O)=O)C(C(O)=O)C1C(O)=O WOSVXXBNNCUXMT-UHFFFAOYSA-N 0.000 description 1
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- IEPRKVQEAMIZSS-AATRIKPKSA-N diethyl fumarate Chemical compound CCOC(=O)\C=C\C(=O)OCC IEPRKVQEAMIZSS-AATRIKPKSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
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- 235000011187 glycerol Nutrition 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
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- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
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- KPSSIOMAKSHJJG-UHFFFAOYSA-N neopentyl alcohol Chemical compound CC(C)(C)CO KPSSIOMAKSHJJG-UHFFFAOYSA-N 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
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- 238000005096 rolling process Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
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- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- UQSBVZIXVVORQC-UHFFFAOYSA-N tetraethyl ethane-1,1,2,2-tetracarboxylate Chemical compound CCOC(=O)C(C(=O)OCC)C(C(=O)OCC)C(=O)OCC UQSBVZIXVVORQC-UHFFFAOYSA-N 0.000 description 1
- GTZCVFVGUGFEME-HNQUOIGGSA-N trans-aconitic acid Chemical compound OC(=O)C\C(C(O)=O)=C/C(O)=O GTZCVFVGUGFEME-HNQUOIGGSA-N 0.000 description 1
- GTZCVFVGUGFEME-UHFFFAOYSA-N trans-aconitic acid Natural products OC(=O)CC(C(O)=O)=CC(O)=O GTZCVFVGUGFEME-UHFFFAOYSA-N 0.000 description 1
- TVWZLLYAJDSSCJ-UHFFFAOYSA-N triethyl ethane-1,1,2-tricarboxylate Chemical compound CCOC(=O)CC(C(=O)OCC)C(=O)OCC TVWZLLYAJDSSCJ-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
- C04B35/49—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates
- C04B35/491—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates based on lead zirconates and lead titanates, e.g. PZT
- C04B35/493—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates based on lead zirconates and lead titanates, e.g. PZT containing also other lead compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
- B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G25/00—Compounds of zirconium
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
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Description
強誘電体を形成するための前駆体を含む前駆体組成物であって、
前記強誘電体は、一般式AB1−xCxO3で示され、
A元素は少なくともPbからなり、
B元素はZr、Ti、V、WおよびHfの少なくとも一つからなり、
C元素は、NbおよびTaの少なくとも一つからなり、
前記前駆体は、少なくとも前記B元素およびC元素を含み、かつ一部にエステル結合を有する。
前記C元素は、Nbであることができる。
強誘電体を形成するための前駆体を含む前駆体組成物の製造方法であって、
前記強誘電体は、一般式AB1−xCxO3で示され、A元素は少なくともPbからなり、B元素はZr、Ti、V、WおよびHfの少なくとも一つからなり、C元素は、NbおよびTaの少なくとも一つからなり、
少なくとも前記B元素および前記C元素を含むゾルゲル原料であって、金属アルコキシドの加水分解・縮合物を含むゾルゲル原料と、ポリカルボン酸またはポリカルボン酸エステルと、有機溶媒とを混合し、
前記ポリカルボン酸または前記ポリカルボン酸エステルに由来するポリカルボン酸と金属アルコキシドとのエステル化によるエステル結合を有する前駆体を形成することを含む。
本実施形態にかかる前駆体組成物は、強誘電体の成膜に用いられる。ここで、強誘電体は、一般式AB1−xCxO3で示され、A元素は少なくともPbからなり、B元素はZr、Ti、V、WおよびHfの少なくとも一つからなり、C元素は、NbおよびTaの少なくとも一つからなることができる。そして、本実施形態では、前駆体は、少なくともB元素およびC元素を含み、かつ一部にエステル結合を有する。
プロパノール(プロピルアルコール)として、1−プロパノール(沸点97.4℃)、2−プロパノール(沸点82.7℃)、
ブタノール(ブチルアルコール)として、1−ブタノール(沸点117℃)、2−ブタノール(沸点100℃)、2−メチル−1−プロパノール(沸点108℃)、2−メチル−2−プロパノール(融点25.4℃,沸点83℃)、
ペンタノール(アミルアルコール)として、1−ペンタノール(沸点137℃)、3−メチル−1−ブタノール(沸点131℃)、2−メチル−1−ブタノール(沸点128℃)、2,2ジメチル−1−プロパノール(沸点113℃)、2−ペンタノール(沸点119℃)、3−メチル−2−ブタノール(沸点112.5℃)、3−ペンタノール(沸点117℃)、2−メチル−2−ブタノール(沸点102℃)、
多価アルコール類;
エチレングリコール(融点−11.5℃,沸点197.5℃)、グリセリン(融点17℃,沸点290℃)。
本実施形態にかかる前駆体組成物の製造方法は、一般式AB1−xCxO3で示され、A元素は少なくともPbからなり、B元素はZr、Ti、V、WおよびHfの少なくとも一つからなり、C元素は、NbおよびTaの少なくとも一つからなる強誘電体の形成に用いることができる。本実施形態の製造方法は、少なくとも前記B元素および前記C元素を含むゾルゲル原料であって、金属アルコキシドの加水分解・縮合物を含むゾルゲル原料と、ポリカルボン酸またはポリカルボン酸エステルと、有機溶媒とを混合し、前記ポリカルボン酸または前記ポリカルボン酸エステルに由来するポリカルボン酸と金属アルコキシドとのエステル化によるエステル結合を有する前駆体を形成することを含む。
本実施形態にかかる強誘電体膜の製造方法は、上述した本実施形態にかかる前駆体組成物を、白金系金属からなる金属膜上に塗布した後、熱処理することを含む。白金系金属は、エステル化に対して良好な酸性触媒作用を有するので、強誘電体膜の結晶化をより良好にすることができる。白金系金属としては、PtおよびIrの少なくとも一方であることができる。白金系金属の代わりに、SrRuO3やLaNiO3などのペロブスイカイト型電極材料を用いることもできる。この製造方法によれば、公知の塗布法を用いた簡易な方法によって特性のよい強誘電体膜を得ることができる。
以下、本発明の実施例について説明する。
(A)本実施例では、PZTN強誘電体膜は、Pb、Zr、Ti、およびNbの少なくともいずれかを含む第1ないし第3の原料溶液と、ポリカルボン酸エステルとしてのコハク酸ジメチルと、有機溶媒としてのn−ブタノールとを混合し、これらの混合液に含まれる酸化物を熱処理等により結晶化させて得られた。混合液は、ゾルゲル原料とコハク酸ジメチルとを1:1の割合でn−ブタノールに溶解したものである。
本実施例では、溶液を調製する際に加熱する点で、実施例1と異なる。溶液の組成は実施例1と同様である。すなわち、ゾルゲル原料として、実施例1で用いられたPbZr0.2Ti0.8Nb0.2O3(PZTN)に相当する第1〜第3の原料溶液にPbSiO3結晶を形成するための第4の原料溶液を、2モル%の割合で添加したものを用いた。このゾルゲル原料とコハク酸ジメチルとを1:1の割合でn−ブタノールに溶解した後、溶液を80℃で60分間加熱して溶液(前駆体組成物)を得た。
本実施例では、本願発明により得られたPZTNと従来のPZTとを比較する。成膜に用いられる溶液は、実施例2と同様である。すなわち、第1ないし第4の原料溶液と、コハク酸ジメチルとをn−ブタノールに溶解したのち、温度80℃にて1時間保持し、溶液(前駆体組成物)を調製した。溶液の組成は以下のようである。
本実施例では、PZTN強誘電体膜において、Nb添加量を0、5、10、20、30、40モル%と変化させて強誘電特性を比較した。全ての試料においてPbSiO3シリケートを5モル%添加している。溶液(前駆体組成物)は、実施例2と同様に調製され、コハク酸ジメチルおよび有機溶媒としてn−ブタノールを用いた。
比較のため、実施例2で用いたコハク酸ジメチルの代わりにモノカルボン酸エステルを用いた。
本実施例では、ポリカルボン酸エステルとして、コハク酸ジメチル、マレイン酸ジメチル、およびマロン酸ジメチルを用いて原料溶液を調製し、各原料溶液を用いて実施例2と同様にしてサンプルを形成した。
本実施例では、Nbの代わりにTaを含む酸化物を用いて原料溶液を調製し、実施例2と同様にしてサンプルを形成した。
本実施例では、結晶化温度を変えた他は、実施例1と同様にしてサンプルを形成した。
実施例7で用いたn−ブタノールの代わりに、有機溶媒としてアルカンであるn−オクタンを用いたほかは実施例7と同様にしてサンプルを得た。
本実施例では、有機溶媒としてn−ブタノールの代わりにエチレングリコールを用いた点で、実施例1と異なる。すなわち、本実施例では、PZTN強誘電体膜は、Pb、Zr、TiおよびNbの少なくともいずれかを含む第1ないし第3の原料溶液と、ポリカルボン酸としてのコハク酸ジメチルと、有機溶媒としてのエチレングリコール(C2H6O2:二価アルコール)とを混合し、これらの混合液に含まれる酸化物を熱処理等により結晶化させて得られた。混合液は、ゾルゲル原料とコハク酸ジメチルとを1:1の割合でエチレングリコールに溶解したものである。
本実施例では、PZTN強誘電体膜は、Pb、Zr、Ti、およびNbの少なくともいずれかを含む第1ないし第3の原料溶液と、ポリカルボン酸としては、コハク酸ジメチル、マレイン酸ジメチル、マロン酸ジメチル、およびクエン酸トリブチルのいずれかと、有機溶媒としてのn−ブタノールとをそれぞれ混合し、これらの混合液に含まれる酸化物を熱処理等により結晶化させて得られた。混合液は、ゾルゲル原料とコハク酸ジメチル、マレイン酸ジメチル、マロン酸ジメチル、またはクエン酸トリブチルのそれぞれとを1:1の割合でn−ブタノールに溶解したものである。
まず、室温にて、PZTN形成用ゾルゲル溶液a,b,c,dを、それぞれスピン塗布法によって白金基板に塗布し、ホットプレートを用いて150℃で乾燥処理を行い、アルコールを除去した。その後、ホットプレートを用いて300℃で脱脂熱処理を行った。その後、上記塗布工程、乾燥処理工程および脱脂熱処理を3回行った後、酸素中で650℃、5分間の結晶化アニール(焼成)により、膜厚120nmの強誘電体膜のサンプルa,b,c,dを得た。結晶化のための焼成は、酸素雰囲気中で120℃/秒の昇温速度のサーマルラピッドアニール(RTA)を用いて行った。さらに、白金からなる上部電極をスパッタ法により形成して、強誘電体キャパシタサンプルa,b,c,dを得た。
次に、本実施形態の原料溶液を用いて形成された強誘電体膜を含む半導体素子について説明する。本実施形態では、半導体素子の一例である強誘電体キャパシタを含む強誘電体メモリ装置を例に挙げて説明する。
次に、本実施形態の原料溶液を用いて形成された強誘電体膜を圧電素子に適用した例について説明する。
次に、上述の圧電素子が圧電アクチュエータとして機能しているインクジェット式記録ヘッドおよびこのインクジェット式記録ヘッドを有するインクジェットプリンタについて説明する。以下の説明では、インクジェット式記録ヘッドについて説明した後に、インクジェットプリンタについて説明する。図51は、本実施形態に係るインクジェット式記録ヘッドの概略構成を示す側断面図であり、図52は、このインクジェット式記録ヘッドの分解斜視図であり、通常使用される状態とは上下逆に示したものである。なお、図53には、本実施形態に係るインクジェット式記録ヘッドを有するインクジェットプリンタ700を示す。
図51に示すように、インクジェット式記録ヘッド50は、ヘッド本体(基体)57と、ヘッド本体57上に形成される圧電部54と、を含む。圧電部54には図50に示す圧電素子1が設けられ、圧電素子1は、下部電極3、圧電体膜(強誘電体膜)4および上部電極5が順に積層して構成されている。圧電体膜4は、1.の項で述べた原料溶液を用いて形成された膜である。インクジェット式記録ヘッドにおいて、圧電部54は、圧電アクチュエータとして機能する。
Claims (25)
- 強誘電体を形成するための前駆体と、
ポリカルボン酸と、
アルコールと、
を含む前駆体組成物であって、
前記強誘電体は、一般式AB1−xCxO3で示され、
A元素は少なくともPbからなり、
B元素はZrおよびTiからなり、
C元素は、NbまたはTaからなり、
前記前駆体は、前記A元素、前記B元素および前記C元素の各金属アルコキシドの加水分解・縮合物同士がエステル結合によって縮合した高分子ネットワークを有する、前駆体組成物。 - 請求項1において、
前記強誘電体は、0.05≦x<1の範囲でNbを含む、前駆体組成物。 - 請求項2において、
前記強誘電体は、0.1≦x≦0.3の範囲でNbを含む、前駆体組成物。 - 請求項1において、
前記強誘電体は、0.05≦x<1の範囲でTaを含む、前駆体組成物。 - 請求項1ないし4のいずれかにおいて、
さらに、前記強誘電体は、0.5モル%以上のSi、あるいはSiおよびGeを含む、前駆体組成物。 - 請求項5において、
前記強誘電体は、0.5〜5モル%のSi、あるいはSiおよびGeを含む、前駆体組成物。 - 強誘電体を形成するための前駆体を含む前駆体組成物の製造方法であって、
前記強誘電体は、一般式AB1−xCxO3で示され、A元素は少なくともPbからなり、B元素はZrおよびTiからなり、C元素は、NbまたはTaからなり、
少なくとも前記B元素および前記C元素を含むゾルゲル原料と、ポリカルボン酸エステルと、アルコールとを混合し、
前記ゾルゲル原料と前記ポリカルボン酸エステルは、1≦(ポリカルボン酸エステルのモルイオン濃度)/(ゾルゲル原料の総モルイオン濃度)の関係を満たし、
前記ポリカルボン酸エステルに由来するポリカルボン酸と金属アルコキシドとのエステル化によるエステル結合を有する前駆体を形成することを含む、前駆体組成物の製造方法。 - 請求項7において、
前記ポリカルボン酸エステルは、2価のカルボン酸エステルである、前駆体組成物の製造方法。 - 請求項8において、
前記2価のカルボン酸エステルは、コハク酸エステル、マレイン酸エステルおよびマロン酸エステルから選択される少なくとも1種である、前駆体組成物の製造方法。 - 請求項7ないし9のいずれかにおいて、
前記ポリカルボン酸エステルの分子量は、150以下である、前駆体組成物の製造方法。 - 請求項7ないし10のいずれかにおいて、
前記ポリカルボン酸エステルは、室温において液体である、前駆体組成物の製造方法。 - 請求項7ないし10のいずれかにおいて、
前記ゾルゲル原料は金属カルボン酸塩を用いたゾルゲル原料を含む、前駆体組成物の製造方法。 - 請求項12において、
前記金属カルボン酸塩は、鉛のカルボン酸塩である、前駆体組成物の製造方法。 - 請求項7ないし13のいずれかにおいて、
前記ゾルゲル原料と、前記ポリカルボン酸エステルと、前記アルコールとを混合する際に、さらに有機金属化合物を含む、前駆体組成物の製造方法。 - 請求項7ないし14のいずれかにおいて、
前記ゾルゲル原料と、前記ポリカルボン酸エステルと、前記アルコールとを混合する際に、さらにSi、あるいはSiおよびGeを含むゾルゲル原料を用いる、前駆体組成物の製造方法。 - 請求項7ないし15のいずれかにおいて、
前記ゾルゲル原料として、少なくともPbZrO3用ゾルゲル溶液、PbTiO3用ゾルゲル溶液、およびPbNbO3用ゾルゲル溶液を混合したものを用いる、前駆体組成物の製造方法。 - 請求項7ないし15のいずれかにおいて、
前記ゾルゲル原料として、少なくともPbZrO3用ゾルゲル溶液、PbTiO3用ゾルゲル溶液、およびPbTaO3用ゾルゲル溶液を混合したものを用いる、前駆体組成物の製造方法。 - 請求項16または17において、
ゾルゲル原料として、さらにPbSiO3用ゾルゲル溶液を混合したものを用いる、前駆体組成物の製造方法。 - 請求項1ないし6のいずれかに記載の前駆体組成物を、導電膜上に塗布した後、熱処理することを含む、強誘電体膜の製造方法。
- 請求項19において、
前記導電膜は、白金系金属からなる、強誘電体膜の製造方法。 - 請求項1〜6のいずれかに記載の前駆体組成物を用いて形成された強誘電体膜を含む、圧電素子。
- 請求項1〜6のいずれかに記載の前駆体組成物を用いて形成された強誘電体膜を含む、半導体装置。
- 請求項21に記載の圧電素子を含む、圧電アクチュエータ。
- 請求項23に記載の圧電アクチュエータを含む、インクジェット式記録ヘッド。
- 請求項24に記載のインクジェット式記録ヘッドを含む、インクジェットプリンタ。
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JP2004380987A Expired - Fee Related JP4709544B2 (ja) | 2004-05-31 | 2004-12-28 | 前駆体組成物、前駆体組成物の製造方法、強誘電体膜の製造方法、圧電素子、半導体装置、圧電アクチュエータ、インクジェット式記録ヘッド、およびインクジェットプリンタ |
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US (2) | US7485182B2 (ja) |
EP (1) | EP1602636A3 (ja) |
JP (1) | JP4709544B2 (ja) |
KR (1) | KR100698423B1 (ja) |
TW (1) | TW200539428A (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3791614B2 (ja) * | 2002-10-24 | 2006-06-28 | セイコーエプソン株式会社 | 強誘電体膜、強誘電体メモリ装置、圧電素子、半導体素子、圧電アクチュエータ、液体噴射ヘッド及びプリンタ |
JP4269172B2 (ja) | 2004-12-24 | 2009-05-27 | セイコーエプソン株式会社 | インクジェット塗布用インクおよびその製造方法、ならびに強誘電体膜の製造方法 |
JP4257537B2 (ja) | 2005-06-02 | 2009-04-22 | セイコーエプソン株式会社 | 強誘電体層の製造方法、電子機器の製造方法、強誘電体メモリ装置の製造方法、圧電素子の製造方法、およびインクジェット式記録ヘッドの製造方法 |
JP4396857B2 (ja) * | 2005-08-30 | 2010-01-13 | セイコーエプソン株式会社 | 絶縁性ターゲット材料の製造方法 |
JP4553137B2 (ja) * | 2005-09-05 | 2010-09-29 | セイコーエプソン株式会社 | 複合酸化物積層体の製造方法 |
JP2007145672A (ja) * | 2005-11-29 | 2007-06-14 | Seiko Epson Corp | 複合金属酸化物用原料組成物 |
JP2007157982A (ja) | 2005-12-05 | 2007-06-21 | Seiko Epson Corp | トランジスタ型強誘電体メモリおよびその製造方法 |
JP4826744B2 (ja) * | 2006-01-19 | 2011-11-30 | セイコーエプソン株式会社 | 絶縁性ターゲット材料の製造方法 |
JP2007314368A (ja) * | 2006-05-25 | 2007-12-06 | Fujifilm Corp | ペロブスカイト型酸化物、強誘電素子、圧電アクチュエータ、及び液体吐出装置 |
JP2008031029A (ja) * | 2006-06-28 | 2008-02-14 | Seiko Epson Corp | 粉体状の複合金属酸化物の製造方法およびアモルファス複合金属酸化物 |
US7623191B2 (en) * | 2006-09-19 | 2009-11-24 | Hannstar Display Corp. | Liquid crystal display devices |
JP2009170695A (ja) * | 2008-01-17 | 2009-07-30 | Seiko Epson Corp | 強誘電体メモリの製造方法 |
JP2009252786A (ja) * | 2008-04-01 | 2009-10-29 | Seiko Epson Corp | 酸化物原料溶液、酸化物膜、圧電素子、酸化物膜の形成方法および圧電素子の製造方法 |
US8164234B2 (en) * | 2009-02-26 | 2012-04-24 | Fujifilm Corporation | Sputtered piezoelectric material |
EP3605625B1 (en) * | 2017-03-31 | 2021-04-28 | FUJIFILM Corporation | Piezoelectric body membrane, piezoelectric element, and piezoelectric element manufacturing method |
CN113228508A (zh) * | 2018-12-20 | 2021-08-06 | 三安日本科技株式会社 | 弹性波装置、弹性波滤波器、双工器及模块 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH04506791A (ja) | 1989-04-21 | 1992-11-26 | アルキャン インターナショナル リミテッド | ゾル・ゲル処理による薄膜セラミックの製造 |
JPH0769645A (ja) | 1993-08-27 | 1995-03-14 | Murata Mfg Co Ltd | 鉛含有複合酸化物の製造方法 |
DE4332831C1 (de) * | 1993-09-27 | 1994-10-06 | Fraunhofer Ges Forschung | Formkörper auf der Basis von PZT (Pb(Zr,Ti)O¶3¶, Bleizirkonat-Bleititanat), Verfahren und Zwischenprodukt zu deren Herstellung |
JPH07267731A (ja) | 1994-03-23 | 1995-10-17 | Sharp Corp | 強誘電体膜の製造方法 |
US5894064A (en) | 1995-03-13 | 1999-04-13 | Hampden-Smith; Mark | Solution routes to metal oxide films through ester elimination reactions |
US5908802A (en) | 1997-10-30 | 1999-06-01 | Sandia Corporation | Nonaqueous solution synthesis process for preparing oxide powders of lead zirconate titanate and related materials |
JP3791614B2 (ja) | 2002-10-24 | 2006-06-28 | セイコーエプソン株式会社 | 強誘電体膜、強誘電体メモリ装置、圧電素子、半導体素子、圧電アクチュエータ、液体噴射ヘッド及びプリンタ |
WO2005054134A1 (ja) * | 2003-12-05 | 2005-06-16 | Jsr Corporation | 誘電体膜形成用組成物の製造方法、誘電体膜形成用組成物、ならびに誘電体膜およびその形成方法 |
-
2004
- 2004-12-28 JP JP2004380987A patent/JP4709544B2/ja not_active Expired - Fee Related
-
2005
- 2005-05-16 US US11/129,475 patent/US7485182B2/en not_active Expired - Fee Related
- 2005-05-25 EP EP20050011303 patent/EP1602636A3/en not_active Ceased
- 2005-05-26 TW TW94117254A patent/TW200539428A/zh not_active IP Right Cessation
- 2005-05-30 KR KR20050045700A patent/KR100698423B1/ko not_active IP Right Cessation
-
2008
- 2008-12-22 US US12/318,121 patent/US20090184290A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
KR100698423B1 (ko) | 2007-03-26 |
TW200539428A (en) | 2005-12-01 |
KR20060046288A (ko) | 2006-05-17 |
JP2006151785A (ja) | 2006-06-15 |
US7485182B2 (en) | 2009-02-03 |
EP1602636A3 (en) | 2007-03-14 |
US20090184290A1 (en) | 2009-07-23 |
US20050271823A1 (en) | 2005-12-08 |
TWI305041B (ja) | 2009-01-01 |
EP1602636A2 (en) | 2005-12-07 |
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