JP2004311924A - 強誘電体キャパシタおよびその製造方法、強誘電体メモリ、圧電素子。 - Google Patents
強誘電体キャパシタおよびその製造方法、強誘電体メモリ、圧電素子。 Download PDFInfo
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- 239000003990 capacitor Substances 0.000 title claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 34
- 238000010438 heat treatment Methods 0.000 claims abstract description 31
- 230000001681 protective effect Effects 0.000 claims abstract description 30
- 239000002131 composite material Substances 0.000 claims abstract description 26
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 14
- 229910052745 lead Inorganic materials 0.000 claims abstract description 9
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 7
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 7
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 14
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 claims description 14
- 230000001590 oxidative effect Effects 0.000 claims description 13
- 239000000470 constituent Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 230000008569 process Effects 0.000 abstract description 20
- 230000004888 barrier function Effects 0.000 abstract description 9
- 239000010410 layer Substances 0.000 description 19
- 238000002425 crystallisation Methods 0.000 description 16
- 230000008025 crystallization Effects 0.000 description 16
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 239000013078 crystal Substances 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 238000006722 reduction reaction Methods 0.000 description 6
- 239000000654 additive Substances 0.000 description 5
- 230000000996 additive effect Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910000510 noble metal Inorganic materials 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 238000000018 DNA microarray Methods 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000005324 grain boundary diffusion Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
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- C01G33/00—Compounds of niobium
- C01G33/006—Compounds containing, besides niobium, two or more other elements, with the exception of oxygen or hydrogen
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Abstract
【解決手段】 本発明の強誘電体キャパシタの製造方法は、所与の基体10上に下部電極20を形成すること、前記下部電極20上にPb、Zr、Ti、およびNbを構成元素として含むPZTN複合酸化物からなる強誘電体膜30を形成すること、前記強誘電体膜30の上に上部電極40を形成すること、前記下部電極20、強誘電体膜30、および上部電極40を被覆するように保護膜50を形成すること、少なくとも前記保護膜50を形成した後に、前記PZTN複合酸化物を結晶化するための熱処理を行うこと、を含む。
【選択図】 図1
Description
図1は、本発明の実施の形態に係る強誘電体キャパシタの製造工程の一例を模式的に示す断面図である。
図4は、本発明の実施の形態に係る強誘電体メモリの製造工程の一例を模式的に示す断面図である。
以下に、本発明の実施形態における、インクジェット式記録ヘッドについて詳細に説明する。
Claims (7)
- 所与の基体上に下部電極を形成すること、
前記下部電極上にPb、Zr、Ti、およびNbを構成元素として含むPZTN複合酸化物からなる強誘電体膜を形成すること、
前記強誘電体膜の上に上部電極を形成すること、
前記下部電極、強誘電体膜、および上部電極を被覆するように保護膜を形成すること、
少なくとも前記保護膜を形成した後に、前記PZTN複合酸化物を結晶化するための熱処理を行うこと、
を含む、強誘電体キャパシタの製造方法。 - 請求項1において、
前記強誘電体膜は、形成時に酸化雰囲気下で仮熱処理が施され、前記PZTN複合酸化物を結晶化するための熱処理が行われるまでアモルファス状態とされている、強誘電体キャパシタの製造方法。 - 請求項1または2において、
前記保護膜は、酸化シリコン膜であって、トリメチルシランを用いて形成される、強誘電体キャパシタの製造方法。 - 請求項1〜3のいずれかにおいて、
前記PZTN複合酸化物を結晶化するための熱処理を非酸化雰囲気中で行う、強誘電体キャパシタの製造方法。 - 請求項1〜4のいずれかに記載された製造方法を用いて形成される、強誘電体キャパシタ。
- 請求項5に記載された強誘電体キャパシタを含む、強誘電体メモリ。
- 請求項5に記載された強誘電体キャパシタを含む、圧電素子。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003302901A JP2004311924A (ja) | 2003-03-26 | 2003-08-27 | 強誘電体キャパシタおよびその製造方法、強誘電体メモリ、圧電素子。 |
CNB2004100301838A CN1311542C (zh) | 2003-03-26 | 2004-03-19 | 强电介质电容器及其制造方法、强电介质存储器及压电元件 |
US10/807,278 US7037731B2 (en) | 2003-03-26 | 2004-03-24 | Ferroelectric capacitor, method of manufacturing the same, ferroelectric memory, and piezoelectric device |
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JP2003085791 | 2003-03-26 | ||
JP2003302901A JP2004311924A (ja) | 2003-03-26 | 2003-08-27 | 強誘電体キャパシタおよびその製造方法、強誘電体メモリ、圧電素子。 |
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JP2004311924A true JP2004311924A (ja) | 2004-11-04 |
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JP2003302901A Withdrawn JP2004311924A (ja) | 2003-03-26 | 2003-08-27 | 強誘電体キャパシタおよびその製造方法、強誘電体メモリ、圧電素子。 |
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US (1) | US7037731B2 (ja) |
JP (1) | JP2004311924A (ja) |
CN (1) | CN1311542C (ja) |
Cited By (6)
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JP2007019407A (ja) * | 2005-07-11 | 2007-01-25 | Seiko Epson Corp | キャパシタの製造方法 |
JP2007103722A (ja) * | 2005-10-05 | 2007-04-19 | Seiko Epson Corp | キャパシタおよびその製造方法、強誘電体メモリ装置、アクチュエータ、並びに、液体噴射ヘッド |
JP2007157982A (ja) * | 2005-12-05 | 2007-06-21 | Seiko Epson Corp | トランジスタ型強誘電体メモリおよびその製造方法 |
JP2008053395A (ja) * | 2006-08-24 | 2008-03-06 | Seiko Epson Corp | 積層膜の製造方法及びアクチュエータ装置の製造方法並びに液体噴射ヘッドの製造方法、アクチュエータ装置 |
JP2008244266A (ja) * | 2007-03-28 | 2008-10-09 | Seiko Epson Corp | 圧電素子の製造方法、インクジェット式記録ヘッド、およびインクジェットプリンター |
JP2010166073A (ja) * | 2010-03-08 | 2010-07-29 | Seiko Epson Corp | キャパシタ、強誘電体メモリ装置、アクチュエータおよび液体噴射ヘッド |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP3791614B2 (ja) * | 2002-10-24 | 2006-06-28 | セイコーエプソン株式会社 | 強誘電体膜、強誘電体メモリ装置、圧電素子、半導体素子、圧電アクチュエータ、液体噴射ヘッド及びプリンタ |
US7057877B2 (en) * | 2003-08-27 | 2006-06-06 | Seiko Epson Corporation | Capacitor, method of manufacture thereof and semiconductor device |
JP4257537B2 (ja) * | 2005-06-02 | 2009-04-22 | セイコーエプソン株式会社 | 強誘電体層の製造方法、電子機器の製造方法、強誘電体メモリ装置の製造方法、圧電素子の製造方法、およびインクジェット式記録ヘッドの製造方法 |
JP2007059705A (ja) * | 2005-08-25 | 2007-03-08 | Seiko Epson Corp | キャパシタおよびその製造方法、強誘電体メモリ装置の製造方法、アクチュエータの製造方法、並びに、液体噴射ヘッドの製造方法 |
JP4553137B2 (ja) * | 2005-09-05 | 2010-09-29 | セイコーエプソン株式会社 | 複合酸化物積層体の製造方法 |
JP4352271B2 (ja) * | 2006-06-09 | 2009-10-28 | セイコーエプソン株式会社 | 半導体装置 |
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US7918542B2 (en) * | 2006-09-15 | 2011-04-05 | Fujifilm Corporation | Perovskite oxide, process for producing the perovskite oxide, piezoelectric body, piezoelectric device, and liquid discharge device |
US7592273B2 (en) * | 2007-04-19 | 2009-09-22 | Freescale Semiconductor, Inc. | Semiconductor device with hydrogen barrier and method therefor |
JP2009170695A (ja) * | 2008-01-17 | 2009-07-30 | Seiko Epson Corp | 強誘電体メモリの製造方法 |
US9773793B2 (en) * | 2009-10-09 | 2017-09-26 | Texas Instuments Incorporated | Transistor performance modification with stressor structures |
US8416609B2 (en) | 2010-02-15 | 2013-04-09 | Micron Technology, Inc. | Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, methods of writing to and reading from a memory cell, and computer systems |
US8437174B2 (en) | 2010-02-15 | 2013-05-07 | Micron Technology, Inc. | Memcapacitor devices, field effect transistor devices, non-volatile memory arrays, and methods of programming |
US8634224B2 (en) | 2010-08-12 | 2014-01-21 | Micron Technology, Inc. | Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of writing to and reading from a memory cell, and methods of programming a memory cell |
JP5845866B2 (ja) | 2011-12-07 | 2016-01-20 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
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JP3682684B2 (ja) * | 1997-10-20 | 2005-08-10 | セイコーエプソン株式会社 | 圧電体薄膜素子の製造方法 |
KR100333669B1 (ko) * | 1999-06-28 | 2002-04-24 | 박종섭 | 레드니오비움지르코니움타이타니트 용액 형성 방법 및 그를 이용한 강유전체 캐패시터 제조 방법 |
EP1071121A1 (en) * | 1999-07-19 | 2001-01-24 | International Business Machines Corporation | Process for the formation of a collar oxide in a trench in a semiconductor substrate |
DE10000005C1 (de) * | 2000-01-03 | 2001-09-13 | Infineon Technologies Ag | Verfahren zur Herstellung eines ferroelektrischen Halbleiterspeichers |
TW523792B (en) * | 2000-09-07 | 2003-03-11 | Toshiba Corp | Semiconductor device and its manufacturing method |
KR100570576B1 (ko) * | 2000-10-17 | 2006-04-13 | 샤프 가부시키가이샤 | 산화물 재료, 산화물 박막의 제조 방법 및 상기 재료를사용한 소자 |
US6635497B2 (en) * | 2001-12-21 | 2003-10-21 | Texas Instruments Incorporated | Methods of preventing reduction of IrOx during PZT formation by metalorganic chemical vapor deposition or other processing |
JP3791614B2 (ja) | 2002-10-24 | 2006-06-28 | セイコーエプソン株式会社 | 強誘電体膜、強誘電体メモリ装置、圧電素子、半導体素子、圧電アクチュエータ、液体噴射ヘッド及びプリンタ |
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2003
- 2003-08-27 JP JP2003302901A patent/JP2004311924A/ja not_active Withdrawn
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2004
- 2004-03-19 CN CNB2004100301838A patent/CN1311542C/zh not_active Expired - Fee Related
- 2004-03-24 US US10/807,278 patent/US7037731B2/en not_active Expired - Fee Related
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JP2007019407A (ja) * | 2005-07-11 | 2007-01-25 | Seiko Epson Corp | キャパシタの製造方法 |
US7662724B2 (en) | 2005-07-11 | 2010-02-16 | Seiko Epson Corporation | Method of manufacturing a ferroelectric capacitor with a hydrogen barrier layer |
JP4678251B2 (ja) * | 2005-07-11 | 2011-04-27 | セイコーエプソン株式会社 | キャパシタの製造方法 |
JP2007103722A (ja) * | 2005-10-05 | 2007-04-19 | Seiko Epson Corp | キャパシタおよびその製造方法、強誘電体メモリ装置、アクチュエータ、並びに、液体噴射ヘッド |
JP4506975B2 (ja) * | 2005-10-05 | 2010-07-21 | セイコーエプソン株式会社 | キャパシタおよびその製造方法、強誘電体メモリ装置、アクチュエータ、並びに、液体噴射ヘッド |
JP2007157982A (ja) * | 2005-12-05 | 2007-06-21 | Seiko Epson Corp | トランジスタ型強誘電体メモリおよびその製造方法 |
JP2008053395A (ja) * | 2006-08-24 | 2008-03-06 | Seiko Epson Corp | 積層膜の製造方法及びアクチュエータ装置の製造方法並びに液体噴射ヘッドの製造方法、アクチュエータ装置 |
JP2008244266A (ja) * | 2007-03-28 | 2008-10-09 | Seiko Epson Corp | 圧電素子の製造方法、インクジェット式記録ヘッド、およびインクジェットプリンター |
JP2010166073A (ja) * | 2010-03-08 | 2010-07-29 | Seiko Epson Corp | キャパシタ、強誘電体メモリ装置、アクチュエータおよび液体噴射ヘッド |
Also Published As
Publication number | Publication date |
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US7037731B2 (en) | 2006-05-02 |
CN1532917A (zh) | 2004-09-29 |
CN1311542C (zh) | 2007-04-18 |
US20040229384A1 (en) | 2004-11-18 |
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