JP2002319675A5 - - Google Patents
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- JP2002319675A5 JP2002319675A5 JP2002054942A JP2002054942A JP2002319675A5 JP 2002319675 A5 JP2002319675 A5 JP 2002319675A5 JP 2002054942 A JP2002054942 A JP 2002054942A JP 2002054942 A JP2002054942 A JP 2002054942A JP 2002319675 A5 JP2002319675 A5 JP 2002319675A5
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- 238000009792 diffusion process Methods 0.000 claims 48
- 239000000758 substrate Substances 0.000 claims 6
- 230000005669 field effect Effects 0.000 claims 4
- 230000005684 electric field Effects 0.000 claims 1
Claims (22)
- 高電圧電界効果トランジスタ(HVFET)において、
第1の導電型の基板と、
基板に配置され、第1の導電型と反対の第2の導電型のウエル領域と、
N−ウエル領域に配置され、第1の導電型のソース拡散領域と、
ソース拡散領域から隔置されN−ウエル領域に配置された第1の導電型の第1のドレイン拡散領域であって、第1のドレイン拡散領域とソース拡散領域との間でチャンネル領域をウエル領域に定める第1のドレイン拡散領域と、
第1のドレイン拡散領域から隔置され、ウエル領域に配置された第1の導電型の第2のドレイン拡散領域と、
ウエル領域内に配置され、第1のドレイン拡散領域の下から横方向に第2のドレイン拡散領域の下まで延びる第1の導電型の埋設層領域であって、HVFETがオン状態のときに電流が埋設層領域を通って横方向に流れるように第1および第2のP−型ドレイン拡散領域の両方に接続される埋設層領域と、
チャンネル領域の上方に形成された絶縁ゲートと、
を含む高電圧電界効果トランジスタ。 - 請求項1記載のHVEFTにおいて、さらに、
ソース拡散領域に接続されたソース電極と、
第2のドレイン拡散領域に接続されたドレイン電極と、
を含む前記HVEFT。 - 請求項2記載のHVEFTにおいて、さらに、
ソース拡散領域に近接してウエル領域に配置され、ソース電極に接続された第2の導電型の拡散領域を含む前記HVEFT。 - 請求項2記載のHVEFTにおいて、第1の導電型は、P−型であり、第2の導電型は、N−型であり、第2のドレイン拡散領域は、
ドレイン電極に接続されたP+拡散領域と、
P+拡散領域から埋設層領域まで延びる追加のP−型拡散領域と、
を含む前記HVEFT。 - 請求項2記載のHVEFTにおいて、ソース電極およびドレイン電極は、それぞれ電界板として働く横方向に広がった部分を含む前記HVEFT。
- 請求項5記載のHVEFTにおいて、
第2のドレイン拡散領域に近接および絶縁されて配置されたドレイン電界板部材をさらに含み、ドレイン電界板部材は、ドレイン電極の横方向に延びた部分の下に配置され、これと絶縁されて配置される前記HVEFT。 - 請求項1記載のHVEFTにおいて、埋設層領域は、複数の埋設層を含む前記HVEFT。
- 請求項7記載のHVEFTにおいて、第1のドレイン拡散領域は、ウエル領域中を垂直方向に延び、複数の埋設層のそれぞれに接続される前記HVEFT。
- 請求項8記載のHVEFTにおいて、第2のドレイン拡散領域は、ウエル領域中を垂直方向に延び、複数の埋設層のそれぞれに接続される前記HVEFT。
- 請求項1記載のHVEFTにおいて、第1のドレイン拡散領域は、基板の表面と隣り合う第1の表面を有する前記HVEFT。
- 請求項1記載のHVEFTにおいて、第1の導電型は、N−型であり、第2の導電型は、P−型である前記HVEFT。
- 請求項1記載のHVEFTにおいて、第1のドレイン拡散領域は、比較的に低い電圧で空乏化される前記HVEFT。
- 高電圧電界効果トランジスタ(HVFET)において、
第1の導電型の基板と、
基板に配置され、第1の導電型と反対の第2の導電型のウエル領域と、
ウエル領域に配置され、第1の導電型のソース拡散領域と、
ソース拡散領域から横方向に隔置され、ウエル領域に配置された第1の導電型の第1のドレイン拡散領域と、
第1のドレイン拡散領域とソース拡散領域の間でウエル領域に配置された第1の導電型の第2のドレイン拡散領域であって、第2のドレイン拡散領域とソース拡散領域の間でチャンネル領域をウエル領域に定める第2のドレイン拡散領域と、
ウエル領域内に配置され、第1のドレイン拡散領域の下から横方向に第2のドレイン拡散領域の下まで延びる第1の導電型の複数の平行な隔置された埋設層であって、HVFETがオン状態のときに電流が埋設層のそれぞれを通って横方向に流れるように第1および第2のドレイン拡散領域が埋設層のそれぞれに接続するようにウエル領域中を垂直に延びる埋設層と、
チャンネル領域の上方に形成された絶縁ゲートと、
を含む高電圧電界効果トランジスタ。 - 請求項13記載のHVEFTにおいて、さらに、
ソース拡散領域に接続されたソース電極と、
第1のドレイン拡散領域に接続されたドレイン電極と、
含む前記HVEFT。 - 請求項14記載のHVEFTにおいて、さらに、
ソース拡散領域に近接してウエル領域に配置され、ソース電極に接続された第2の導電型の拡散領域を含む前記HVEFT。 - 請求項14記載のHVEFTにおいて、第1の導電型は、P−型であり、第2の導電型は、N−型であり、第1のドレイン拡散領域は、
ドレイン電極に接続されたP+拡散領域と、
P+拡散領域から下方に埋設層のそれぞれに垂直方向に延びる追加のP−型拡散領域と、
を含む前記HVEFT。 - 請求項14記載のHVEFTにおいて、ソース電極およびドレイン電極は、それぞれ電界板として働く横方向に延びた部分を含む前記HVEFT。
- 請求項17記載のHVEFTにおいて、さらに、
第1のドレイン拡散領域に近接し、これと絶縁されて配置されたドレイン電界板部材を含み、ドレイン電界板部材は、ドレイン電極の下で、これと絶縁されて配置される前記HVEFT。 - 請求項13記載のHVEFTにおいて、埋設層は、それぞれ前記HVEFTがオフ状態にあるときに比較的に低い電圧で完全に空乏化される前記HVEFT。
- 請求項14記載のHVEFTにおいて、第1のドレイン拡散領域は、ドレイン電極と接触し、ウエル領域中を下方に延び埋設層のそれぞれと接触する拡散領域を含む前記HVEFT。
- 請求項13記載のHVEFTにおいて、第2のドレイン拡散領域は、基板の一表面と隣り合う第1の表面を有する前記HVEFT。
- 請求項13記載のHVEFTにおいて、第1の導電型は、N−型であり、第2の導電型は、P−型である前記HVEFT。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US769649 | 1996-12-19 | ||
US09/769,649 US6424007B1 (en) | 2001-01-24 | 2001-01-24 | High-voltage transistor with buried conduction layer |
Related Child Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004271155A Division JP4512459B2 (ja) | 2001-01-24 | 2004-09-17 | 埋設導電層を備えた高電圧トランジスタ |
JP2004271371A Division JP4512460B2 (ja) | 2001-01-24 | 2004-09-17 | 埋設電導層を備えた高電圧トランジスタの製造方法 |
JP2005229783A Division JP4512534B2 (ja) | 2001-01-24 | 2005-08-08 | 埋設導電層を備えた高電圧トランジスタ |
Publications (2)
Publication Number | Publication Date |
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JP2002319675A JP2002319675A (ja) | 2002-10-31 |
JP2002319675A5 true JP2002319675A5 (ja) | 2005-06-16 |
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Family Applications (5)
Application Number | Title | Priority Date | Filing Date |
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JP2002054942A Withdrawn JP2002319675A (ja) | 2001-01-24 | 2002-01-24 | 埋設導電層を備えた高電圧トランジスタ |
JP2004271155A Expired - Fee Related JP4512459B2 (ja) | 2001-01-24 | 2004-09-17 | 埋設導電層を備えた高電圧トランジスタ |
JP2004271371A Expired - Fee Related JP4512460B2 (ja) | 2001-01-24 | 2004-09-17 | 埋設電導層を備えた高電圧トランジスタの製造方法 |
JP2005229783A Expired - Fee Related JP4512534B2 (ja) | 2001-01-24 | 2005-08-08 | 埋設導電層を備えた高電圧トランジスタ |
JP2010001836A Expired - Fee Related JP4663028B2 (ja) | 2001-01-24 | 2010-01-07 | 埋設導電層を備えた高電圧トランジスタを製造する方法 |
Family Applications After (4)
Application Number | Title | Priority Date | Filing Date |
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JP2004271155A Expired - Fee Related JP4512459B2 (ja) | 2001-01-24 | 2004-09-17 | 埋設導電層を備えた高電圧トランジスタ |
JP2004271371A Expired - Fee Related JP4512460B2 (ja) | 2001-01-24 | 2004-09-17 | 埋設電導層を備えた高電圧トランジスタの製造方法 |
JP2005229783A Expired - Fee Related JP4512534B2 (ja) | 2001-01-24 | 2005-08-08 | 埋設導電層を備えた高電圧トランジスタ |
JP2010001836A Expired - Fee Related JP4663028B2 (ja) | 2001-01-24 | 2010-01-07 | 埋設導電層を備えた高電圧トランジスタを製造する方法 |
Country Status (3)
Country | Link |
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US (7) | US6424007B1 (ja) |
EP (3) | EP1524701A3 (ja) |
JP (5) | JP2002319675A (ja) |
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2004
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