MY147514A - Lateral power device with self-biasing electrodes - Google Patents
Lateral power device with self-biasing electrodesInfo
- Publication number
- MY147514A MY147514A MYPI20083076A MYPI20083076A MY147514A MY 147514 A MY147514 A MY 147514A MY PI20083076 A MYPI20083076 A MY PI20083076A MY PI20083076 A MYPI20083076 A MY PI20083076A MY 147514 A MY147514 A MY 147514A
- Authority
- MY
- Malaysia
- Prior art keywords
- region
- doped silicon
- drift
- drift region
- well
- Prior art date
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
Abstract
LATERAL POWER DEVICES WITH SELF-BIASING ELECTRODES ABSTRACT OF THE DISCLOSURE A SEMICONDUCTOR POWER TRANSISTOR INCLUDES A DRIFT REGION OF A FIRST CONDUCTIVITY TYPE AND A WELL REGION OF A SECOND CONDUCTIVITY TYPE IN THE DRIFT REC-NION SUCH THAT THE WELL 5 REGION AND THE DRIFT REGION FORM A PN JUNCTION THEREBETWEEN. A FIRST HIGHLY DOPED SILICON REGION OF THE FIRST CONDUCTIVITTYPE IS IN THE WELL REGION, AND A SECOND HIGHLY DOPED SILICON RE2ION IS IN THE DRIFT REGION. THE SECOND HIGHLY DOPED SILICON REGION IS LATERALLY SPACED FROM THE WELL REGION SUCH THAT UPON BIASING THE TRANSISTOR IN A CONDUCTINO STATE, A CURRENT FLOWS LATERALLY BETWEEN FIRST AND SECOND HI2HIV DOPED SILICON REGIONS THROUGH THE DRIFT REGION. EACH 10 OF A PLURALITY OF TRENCHES EXTENDING INTO 'DIE DRIFT REGION PERPENDICULAR TO THE, CURRENT FLOW INCLUDES A DIELECTRIC LAVER LINING AT LEAST A PORTION OF THE TRENCH SIDEWALLS AND AT LEAST ONE CONDUCTIVE ELECTRODE. FI2. 2
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US77490006P | 2006-02-16 | 2006-02-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MY147514A true MY147514A (en) | 2012-12-31 |
Family
ID=40463816
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MYPI20083076A MY147514A (en) | 2006-02-16 | 2008-08-13 | Lateral power device with self-biasing electrodes |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN101385151B (en) |
| MY (1) | MY147514A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102945838A (en) * | 2012-11-05 | 2013-02-27 | 电子科技大学 | High voltage interconnection structure |
| CN106549052B (en) * | 2015-09-17 | 2021-05-25 | 联华电子股份有限公司 | Lateral diffusion metal oxide semiconductor transistor and manufacturing method thereof |
| CN110739345B (en) * | 2019-08-30 | 2021-03-30 | 电子科技大学 | Self-biased split gate trench type power MOSFET device |
| CN118522769B (en) * | 2024-07-22 | 2024-10-01 | 江苏应能微电子股份有限公司 | High-voltage ESD protection device for latch-up resistance |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB0006957D0 (en) * | 2000-03-23 | 2000-05-10 | Koninkl Philips Electronics Nv | A semiconductor device |
| JP3634830B2 (en) * | 2002-09-25 | 2005-03-30 | 株式会社東芝 | Power semiconductor device |
-
2007
- 2007-02-06 CN CN200780005748.9A patent/CN101385151B/en not_active Expired - Fee Related
-
2008
- 2008-08-13 MY MYPI20083076A patent/MY147514A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN101385151A (en) | 2009-03-11 |
| CN101385151B (en) | 2013-07-24 |
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