CN102684485B - 垂直互补场效应管 - Google Patents

垂直互补场效应管 Download PDF

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CN102684485B
CN102684485B CN201110056548.4A CN201110056548A CN102684485B CN 102684485 B CN102684485 B CN 102684485B CN 201110056548 A CN201110056548 A CN 201110056548A CN 102684485 B CN102684485 B CN 102684485B
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intermediate layer
substrate layer
mos cell
electrodes
field effect
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CN102684485A (zh
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黄勤
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VERSINE SEMICONDUCTOR Co Ltd
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VERSINE SEMICONDUCTOR Co Ltd
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Abstract

垂直互补场效应管，涉及半导体芯片生产技术。更具体的说，涉及功率集成电路芯片生产技术。本发明的衬底层局部延伸入中间层并形成位于两个MOS单元之间的栓部，衬底层的下侧设有导出端，当两个MOS单元的栅极施加开通电压后，形成MOS单元-栓部-衬底层-导出端的两个导流通道。本技术可以集成俩个以上MOS管，因而减小了芯片尺寸。

Description

垂直互补场效应管
技术领域
本发明涉及半导体技术，具体是一种主要用于形成直流-直流变换器（DC/DC Converter）中积木式组件的垂直互补场效应管。
背景技术
目前，积木式组件（Building Block）被广泛地应用于各种电路设计及生产中。积木式组件包括分离的电源开关、电感器、电容器等，为了提高功率密度和开关频率，设计高度集成的积木式组件显得很有必要。
图1所示为一种直流-直流变换器的原理图，SW1和SW2为两个MOS管开关，对应这种电路，应用CMOS技术，可以将SW1和SW2集成在一个积木式组件中。现有集成CMOS结构如图2所示，两个PN极性相反的MOS单元分别设在P衬底（p-substrate）和N井（n-well）上，SW1、SW2的源极和漏极都设在上表面，SW1的漏极、SW2的源极分别接Vin电位和GND电位，SW2的漏极、SW1的源极则相接并输出电位VX，通过控制SW1、SW2的开关来控制VX电位。
这种结构存在如下问题：1）这种横向结构因为侧电流的影响容易在P衬底和N井中产生自偏效应，限制了芯片的尺寸，进一步也限制了转换器的额定电流；2）和分离结构相比，击穿电压较小；3）芯片表面有三个电流端子（Vin、GND、VX），也限制了功率密度和芯片的尺寸。
发明内容
为了解决现有技术中存在的问题，本发明提供一种垂直互补场效应管及方法，通过改进芯片结构，来减小对芯片尺寸的限制，并提高击穿电压。
为此，本发明采用以下技术方案：
垂直互补场效应管，包括至少两个MOS单元，其特征在于：还包括衬底层和设于衬底层上的中间层，该中间层与一个MOS单元对应处嵌有井区，衬底层的PN极性与中间层相反，与井区相同，所述的每个MOS单元包括一对PN同性电极和一个栅极，两个MOS单元的电极PN极性相反，其中一对电极设于中间层上并能在栅极控制下在中间层形成导通沟道，另一对电极设于井上并能在栅极控制下在井中形成导通沟道，所述的衬底层局部延伸入中间层并形成位于两个MOS单元之间的栓部，衬底层的下侧设有导出端，当两个MOS单元的栅极施加开通电压后，形成MOS单元-栓部-衬底层-导出端的两个导流通道。
作为对上述技术方案的完善和补充，本发明进一步采取如下技术措施或是这些措施的任意组合：
所述的衬底为N+材料，中间层为P-材料，井区为N-材料，位于中间层上的MOS单元两个电极均为N+材料，而位于井区的MOS单元两个电极均为P+材料。
所述的衬底为P+材料，中间层为N-材料，井区为P-材料，位于中间层上的MOS单元两个电极均为P+材料，而位于井区的MOS单元两个电极均为N+材料。
本发明也可采用如下方案：
垂直互补场效应管，包括至少两个MOS单元，其特征在于：还包括衬底层和设于衬底层上的中间层，两个MOS单元设于中间层上且共用一个电极，另两个电极则作为两个导入端，这三个电极的PN极性都相同且与中间层相反，所述的衬底层局部延伸入中间层形成栓部并与共用电极连通，衬底层的下侧设有导出端，衬底层与电极的PN极性相同，当两个MOS单元的栅极施加开通电压后，形成导入端电极-共用电极-栓部-衬底层-导出端的两个导流通道。
作为对上述技术方案的完善和补充，本发明进一步采取如下技术措施或是这些措施的任意组合：
所述的衬底为N+材料，中间层为P-材料，位于中间层上的两个MOS单元的两个电极均为N+材料。
所述的衬底为P+材料，中间层为N-材料，位于中间层上的两个MOS单元的两个电极均为P+材料。
在所述MOS单元的漏电极和栅极间设置轻掺杂漏区，来有效提高芯片的击穿电压。
有益效果：本发明通过设置竖向的栓引导电流竖向流动，改原有的横向结构为竖向结构，避免横向侧电流引起自偏效应，且芯片表面只需要两个电流端子，有助于增大芯片尺寸和功率密度，提高转换器的额定电流。由于增加了中间层，在采用低掺杂漏（LDD）工艺的情况下，可以有效增大击穿电压，器件工作更加安全；本发明可以采用修改过的CMOS工艺来实现。除了实现本方面中描述的器件外， 还可以实现标准的模拟和数字集成电路功能。
附图说明
图1为直流-直流变换器的原理图；
图2为现有的直流-直流变换器芯片结构示意图；
图3为本发明的一种芯片结构示意图；
图4为本发明的另一种芯片结构示意图；
图5为本发明的另一种芯片结构示意图；
图6为本发明用作单个MOS开关时的结构示意图；
图7为本发明有LDD区域时的结构示意图。
具体实施方式
实施例一
如图3所示的垂直互补场效应管，N+衬底上为P-中间层，中间层一般为外延层，P-中间层里有N-井层，MOS单元SW1和SW2分别设在P-中间层和N-井层上，N+衬底局部上延伸入中间层形成一个N+栓（Plug），N+衬底下侧为导出端。SW1的漏极和SW2的源极接有两个电流端子，分别用于连接Vin电位和GND电位，导出端用于输出电位VX。工作室电流流向如图中箭头所示，主要沿竖向流动，避免了横向结构存在的自偏效应。
实施例二
如图4所示的垂直互补场效应管，结构与实施例1相似，区别在于各层PN极性相反。
实施例三
如图5所示的垂直互补场效应管，N+衬底上为P-中间层，中间层可为P-外延层或P-井，MOS单元SW1和SW2共用一个电极，三个电极都设在中间层上，N+衬底局部上延伸入中间层直至共用电极形成一个N+栓，N+衬底下侧为导出端。N+栓将SW1和SW2相互隔离，能更好避免侧电流的影响。工作室电流流向同样如图中箭头所示。
实施例四
实施例三的结构略作改进可将本发明结构用于单个MOS管场合（图6），即将芯片表面的三个电极连通，这种结构中，表面的电极作为源极，而底面的导出端作为漏极。通过控制MOS单元SW1和SW2的栅极可调节漏极电流。
理论上，本发明的栓可被设置在每一个N-MOS或者P-MOS单元中，也可每几个N-MOS或者P-MOS单元放置一个栓。为了提供击穿电压， MOS单元的漏电极和栅极间引入了轻掺杂漏区（LDD），可以有效提高芯片的击穿电压（BV），如图7所示。
经过试验，这种结构的垂直互补场效应管在BV为10V的情况下，其Ron（通态电阻）为1.8 mohm  2V（1.8 mohm  2V是指当栅电压从０变到２Ｖ时，通态电阻为1.8 mohm），Qgd（栅-漏电荷电容）为1nC (Vds=5V)，FOM （品质因数）1.8 mohm-nC，Qg（栅电荷）为30 nC 2V。（30 nC 2V是指当栅电压从０变到２Ｖ时，栅电荷是30 nC。）
BV为35V情况下，Ron为3.7 mohm5V，Qgd为2nC，FOM 为7.4 mW-nC。
可见，其性能与标准CMOS相似。
应当指出，本实施例仅列示性说明本发明的原理及功效，而非用于限制本发明。任何熟悉此项技术的人员均可在不违背本发明的精神及范围下，对上述实施例进行修改。因此，本发明的权利保护范围，应如权利要求书所列。

Claims (7)

1.垂直互补场效应管，包括至少两个MOS单元，其特征在于：还包括衬底层和设于衬底层上的中间层，该中间层与一个MOS单元对应处嵌有阱区，衬底层的PN极性与中间层相反，与阱区相同，所述的每个MOS单元包括一对PN同性电极和一个栅极，两个MOS单元的电极PN极性相反，其中一对电极设于中间层上并能在栅极控制下在中间层形成导通沟道，另一对电极设于阱上并能在栅极控制下在阱中形成导通沟道，所述的衬底层局部延伸入中间层并形成位于两个MOS单元之间的栓部，衬底层的下侧设有导出端，当两个MOS单元的栅极施加开通电压后，形成MOS单元-栓部-衬底层-导出端的两个导流通道。
2.根据权利要求1所述的垂直互补场效应管，其特征在于：所述的衬底层为N+材料，中间层为P-材料，阱区为N-材料，位于中间层上的MOS单元两个电极均为N+材料，而位于阱区的MOS单元两个电极均为P+材料。
3.根据权利要求1所述的垂直互补场效应管，其特征在于：所述的衬底层为P+材料，中间层为N-材料，阱区为P-材料，位于中间层上的MOS单元两个电极均为P+材料，而位于阱区的MOS单元两个电极均为N+材料。
4.垂直互补场效应管，包括至少两个MOS单元，其特征在于：还包括衬底层和设于衬底层上的中间层，两个MOS单元设于中间层上且共用一个电极，另两个电极则作为两个导入端，这三个电极的PN极性都相同且与中间层相反，所述的衬底层局部延伸入中间层形成栓部并与共用电极连通，衬底层的下侧设有导出端，衬底层与电极的PN极性相同，当两个MOS单元的栅极施加开通电压后，形成导入端电极-共用电极-栓部-衬底层-导出端的两个导流通道。
5.根据权利要求4所述的垂直互补场效应管，其特征在于：所述的衬底层为N+材料，中间层为P-材料，位于中间层上的MOS单元两个电极均为N+材料。
6.根据权利要求4所述的垂直互补场效应管，其特征在于：所述的衬底层为P+材料，中间层为N-材料，位于中间层上的MOS单元两个电极均为P+材料。
7.根据权利要求4所述的垂直互补场效应管，其特征在于：在所述MOS单元的漏电极和栅极间设置轻掺杂漏区，来有效提高芯片的击穿电压。
CN201110056548.4A 2011-03-09 2011-03-09 垂直互补场效应管 Expired - Fee Related CN102684485B (zh)

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