JP2001338988A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

Info

Publication number
JP2001338988A
JP2001338988A JP2000159544A JP2000159544A JP2001338988A JP 2001338988 A JP2001338988 A JP 2001338988A JP 2000159544 A JP2000159544 A JP 2000159544A JP 2000159544 A JP2000159544 A JP 2000159544A JP 2001338988 A JP2001338988 A JP 2001338988A
Authority
JP
Japan
Prior art keywords
crystal silicon
germanium
single crystal
layer
layer made
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000159544A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001338988A5 (enExample
Inventor
Katsuya Oda
克矢 小田
Katsuyoshi Washio
勝由 鷲尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2000159544A priority Critical patent/JP2001338988A/ja
Priority to TW090107891A priority patent/TW502443B/zh
Priority to US09/824,225 priority patent/US6724019B2/en
Priority to KR1020010022292A priority patent/KR100783980B1/ko
Publication of JP2001338988A publication Critical patent/JP2001338988A/ja
Priority to US10/738,544 priority patent/US6995054B2/en
Publication of JP2001338988A5 publication Critical patent/JP2001338988A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H10D10/891—Vertical heterojunction BJTs comprising lattice-mismatched active layers, e.g. SiGe strained-layer transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/014—Manufacture or treatment of FETs having zero-dimensional [0D] or one-dimensional [1D] channels, e.g. quantum wire FETs, single-electron transistors [SET] or Coulomb blockade transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/856—Complementary IGFETs, e.g. CMOS the complementary IGFETs having different architectures than each other, e.g. high-voltage and low-voltage CMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Integrated Circuits (AREA)
JP2000159544A 2000-05-25 2000-05-25 半導体装置及びその製造方法 Pending JP2001338988A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000159544A JP2001338988A (ja) 2000-05-25 2000-05-25 半導体装置及びその製造方法
TW090107891A TW502443B (en) 2000-05-25 2001-04-02 Semiconductor device and manufacturing method
US09/824,225 US6724019B2 (en) 2000-05-25 2001-04-03 Multi-layered, single crystal field effect transistor
KR1020010022292A KR100783980B1 (ko) 2000-05-25 2001-04-25 반도체 장치 및 그 제조 방법
US10/738,544 US6995054B2 (en) 2000-05-25 2003-12-18 Method of manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000159544A JP2001338988A (ja) 2000-05-25 2000-05-25 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2001338988A true JP2001338988A (ja) 2001-12-07
JP2001338988A5 JP2001338988A5 (enExample) 2006-03-30

Family

ID=18663847

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000159544A Pending JP2001338988A (ja) 2000-05-25 2000-05-25 半導体装置及びその製造方法

Country Status (4)

Country Link
US (2) US6724019B2 (enExample)
JP (1) JP2001338988A (enExample)
KR (1) KR100783980B1 (enExample)
TW (1) TW502443B (enExample)

Cited By (12)

* Cited by examiner, † Cited by third party
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JP2005197405A (ja) * 2004-01-06 2005-07-21 Toshiba Corp 半導体装置とその製造方法
JP2005203798A (ja) * 2004-01-17 2005-07-28 Samsung Electronics Co Ltd 少なくとも５面チャンネル型ｆｉｎｆｅｔトランジスタ及びその製造方法
JP2006041516A (ja) * 2004-07-23 2006-02-09 Internatl Business Mach Corp <Ibm> パターン形成した歪み半導体基板およびデバイス
JP2006513567A (ja) * 2003-01-08 2006-04-20 インターナショナル・ビジネス・マシーンズ・コーポレーション 半導体構造体およびその製造方法（歪みシリコンを用いた高性能の埋め込みｄｒａｍ技術）
JP2006108468A (ja) * 2004-10-07 2006-04-20 Sony Corp 半導体装置および半導体装置の製造方法
KR100588779B1 (ko) * 2003-12-30 2006-06-12 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조방법
JP2007509503A (ja) * 2003-10-20 2007-04-12 インターナショナル・ビジネス・マシーンズ・コーポレーション 半導体構造および半導体構造を製造する方法
JP2007515808A (ja) * 2003-12-23 2007-06-14 インテル・コーポレーション Ｃｍｏｓ用歪トランジスタの集積化
CN100394614C (zh) * 2003-12-01 2008-06-11 台湾积体电路制造股份有限公司 半导体装置及其形成方法
US7691688B2 (en) 2004-04-22 2010-04-06 International Business Machines Corporation Strained silicon CMOS on hybrid crystal orientations
WO2010134334A1 (ja) * 2009-05-22 2010-11-25 住友化学株式会社 半導体基板、電子デバイス、半導体基板の製造方法及び電子デバイスの製造方法
JP2013004968A (ja) * 2011-06-17 2013-01-07 Toshiba Corp 半導体装置とその製造方法

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