JP2013004968A - 半導体装置とその製造方法 - Google Patents
半導体装置とその製造方法 Download PDFInfo
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- JP2013004968A JP2013004968A JP2012124497A JP2012124497A JP2013004968A JP 2013004968 A JP2013004968 A JP 2013004968A JP 2012124497 A JP2012124497 A JP 2012124497A JP 2012124497 A JP2012124497 A JP 2012124497A JP 2013004968 A JP2013004968 A JP 2013004968A
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Abstract
【課題】 単純で容易な実装手段によりMOSFETの閾値電圧を制御することが可能な半導体装置とその製造方法を提供する。
【解決手段】 一実施形態によれば、電界効果トランジスタは、STI(浅いトレンチ分離)を含んでいる半導体基板402と、p−FET401及びn−FET403と、p−FET401が形成される基板の窪み内のシリコン・ゲルマニウム層800と、n−FET部上とシリコン・ゲルマニウム層上に設けられた、ハフニウム化合物とレアアース化合物を含むゲート誘電体414, 432と、ゲート誘電体414, 432上にそれぞれ配置された互いに同じ材料を含むゲート電極416, 434とを具備している。
【選択図】図4
Description
(4) 前記レアアース化合物は、Y、Dy、Sr、Ba、Yb、Lu、又はMgのうちの少なくとも1つを含むことを特徴とする3記載の半導体装置。
前記n型電界効果トランジスタ領域において、前記第2のゲート誘電体上に第2のゲート電極を形成することをさらに含むことを特徴とする19記載の半導体装置の製造方法。
Claims (8)
- 基板と、
前記基板上に設けられたp型電界効果トランジスタと、
前記基板上に設けられたn型電界効果トランジスタと、
を具備し、
前記p型電界効果トランジスタは、
前記基板上に形成されたシリコン・ゲルマニウム層と、
前記シリコン・ゲルマニウム層上に形成され、ハフニウム化合物とレアアース化合物を含む第1の材料としてのhigh-k誘電体を有する第1のゲート誘電体層と、
前記第1のゲート誘電体層上に形成された第2の材料を有する第1のゲート電極と、を具備し、
前記n型電界効果トランジスタは、
前記基板層上に形成された前記high-k誘電体を有する第2のゲート誘電体層と、
前記第2のゲート誘電体層上に形成された前記第2の材料を有する第2のゲート電極と
を具備することを特徴とする半導体装置。 - 前記第1の材料に含まれる前記ハフニウム化合物は、Hf酸化物、Zr酸化物、HfZr酸化物、Hfケイ酸塩、Zrケイ酸塩或いはHfZrケイ酸塩のうち、少なくとも1つを含むことを特徴とする請求項1記載の半導体装置。
- 前記レアアース化合物は、Laであることを特徴とする請求項2記載の半導体装置。
- 基板と
前記基板上に設けられたp型電界効果トランジスタと、を具備し、
前記p型電界効果トランジスタは、
前記基板上に形成されたシリコン・ゲルマニウム層と、
前記シリコン・ゲルマニウム層上に形成され、ハフニウム化合物とレアアースとを含む高誘電率を有する第1の材料から形成されたゲート誘電体と、
前記ゲート誘電体上に第2の材料から形成されたゲート電極と
を具備する半導体装置。 - 前記第1の材料に含まれる前記ハフニウム化合物は、Hf酸化物、Zr酸化物、HfZr酸化物、Hfケイ酸塩、Zrケイ酸塩或いはHfZrケイ酸塩のうち少なくとも1つを含むことを特徴とする請求項4記載の半導体装置。
- 前記第1の材料に含まれる前記レアアース化合物は、La、Y、Dy、Sr、Ba、Yb、Lu、Mg、Be、Sc、Ce、Pr、Nd、Eu、Gd、Tb、又はErのうち少なくとも1つを含むことを特徴とする請求項5記載の半導体装置。
- 浅いトレンチ分離間の半導体基板上でp型電界効果トランジスタ領域のほぼ全上部に窪みを形成し、
前記窪み内にシリコン・ゲルマニウム層を形成し、
前記p型電界効果トランジスタ領域中の前記シリコン・ゲルマニウム層上へハフニウム化合物とレアアース化合物により構成された高誘電率を有するゲート誘電体を形成し、
前記p型電界効果トランジスタ領域中に前記ゲート誘電体上にゲート電極を形成すること
を具備した半導体装置の製造方法。 - 前記ハフニウム化合物と前記レアアース化合物から高誘電率kを有するゲート誘電体を形成することは、Hf酸化物、Zr酸化物、HfZr酸化物、Hfケイ酸塩、Zrケイ酸塩、又はHfZrケイ酸塩のうち少なくとも1つを含む前記ハフニウム化合物の形成と、La、Y、Dy、Sr、Ba、Yb、Lu、Mg、Be、Sc、Ce、Pr、Nd、Eu、Gd、Tb、又はErのうち少なくとも1つを含む前記レアアース化合物の形成を含むことを特徴とする請求項7記載の半導体装置の製造方法。
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US8809152B2 (en) * | 2011-11-18 | 2014-08-19 | International Business Machines Corporation | Germanium oxide free atomic layer deposition of silicon oxide and high-k gate dielectric on germanium containing channel for CMOS devices |
KR20140102351A (ko) * | 2013-02-12 | 2014-08-22 | 삼성전자주식회사 | 게이트 올 어라운드형 반도체 장치 |
US9012956B2 (en) * | 2013-03-04 | 2015-04-21 | Globalfoundries Inc. | Channel SiGe removal from PFET source/drain region for improved silicide formation in HKMG technologies without embedded SiGe |
US9177803B2 (en) | 2013-03-14 | 2015-11-03 | Globalfoundries Inc. | HK/MG process flows for P-type semiconductor devices |
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US9595525B2 (en) | 2014-02-10 | 2017-03-14 | International Business Machines Corporation | Semiconductor device including nanowire transistors with hybrid channels |
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001338988A (ja) * | 2000-05-25 | 2001-12-07 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP2007067266A (ja) * | 2005-09-01 | 2007-03-15 | Toshiba Corp | 半導体装置 |
JP2009182057A (ja) * | 2008-01-29 | 2009-08-13 | Toshiba Corp | 半導体装置とその製造方法 |
JP2009253003A (ja) * | 2008-04-07 | 2009-10-29 | Toshiba Corp | 電界効果トランジスタの製造方法 |
WO2010088039A2 (en) * | 2009-01-21 | 2010-08-05 | Freescale Semiconductor Inc. | Dual high-k oxides with sige channel |
JP2011009580A (ja) * | 2009-06-26 | 2011-01-13 | Renesas Electronics Corp | 半導体装置の製造方法 |
JP2011009541A (ja) * | 2009-06-26 | 2011-01-13 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
JP2011014614A (ja) * | 2009-06-30 | 2011-01-20 | Fujitsu Semiconductor Ltd | 半導体装置及びその製造方法 |
-
2011
- 2011-06-17 US US13/162,825 patent/US20120319207A1/en not_active Abandoned
- 2011-12-26 TW TW100148636A patent/TW201301404A/zh unknown
-
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- 2012-05-31 JP JP2012124497A patent/JP2013004968A/ja active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001338988A (ja) * | 2000-05-25 | 2001-12-07 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP2007067266A (ja) * | 2005-09-01 | 2007-03-15 | Toshiba Corp | 半導体装置 |
JP2009182057A (ja) * | 2008-01-29 | 2009-08-13 | Toshiba Corp | 半導体装置とその製造方法 |
JP2009253003A (ja) * | 2008-04-07 | 2009-10-29 | Toshiba Corp | 電界効果トランジスタの製造方法 |
WO2010088039A2 (en) * | 2009-01-21 | 2010-08-05 | Freescale Semiconductor Inc. | Dual high-k oxides with sige channel |
JP2012516036A (ja) * | 2009-01-21 | 2012-07-12 | フリースケール セミコンダクター インコーポレイテッド | SiGeチャネルを有するデュアル高K酸化物 |
JP2011009580A (ja) * | 2009-06-26 | 2011-01-13 | Renesas Electronics Corp | 半導体装置の製造方法 |
JP2011009541A (ja) * | 2009-06-26 | 2011-01-13 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
JP2011014614A (ja) * | 2009-06-30 | 2011-01-20 | Fujitsu Semiconductor Ltd | 半導体装置及びその製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11387236B2 (en) | 2019-09-17 | 2022-07-12 | Samsung Electronics Co., Ltd. | Semiconductor device |
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