JP2011009718A - 半導体基板、電子デバイス、半導体基板の製造方法及び電子デバイスの製造方法 - Google Patents
半導体基板、電子デバイス、半導体基板の製造方法及び電子デバイスの製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 622
- 239000000758 substrate Substances 0.000 title claims abstract description 280
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 52
- 239000012535 impurity Substances 0.000 claims abstract description 267
- 150000001875 compounds Chemical class 0.000 claims abstract description 222
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 72
- 239000010703 silicon Substances 0.000 claims abstract description 71
- 239000003112 inhibitor Substances 0.000 claims description 103
- 238000000034 method Methods 0.000 claims description 98
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 80
- 239000013078 crystal Substances 0.000 claims description 56
- 238000010438 heat treatment Methods 0.000 claims description 19
- 230000000903 blocking effect Effects 0.000 abstract 1
- 125000004429 atom Chemical group 0.000 description 66
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 31
- 229910052814 silicon oxide Inorganic materials 0.000 description 31
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 28
- 239000010408 film Substances 0.000 description 19
- 239000000463 material Substances 0.000 description 19
- 238000005229 chemical vapour deposition Methods 0.000 description 18
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 18
- 239000000203 mixture Substances 0.000 description 14
- 238000000206 photolithography Methods 0.000 description 14
- 238000005530 etching Methods 0.000 description 13
- 239000002994 raw material Substances 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 238000000137 annealing Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 230000007547 defect Effects 0.000 description 10
- 239000004020 conductor Substances 0.000 description 9
- 238000001451 molecular beam epitaxy Methods 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 8
- 238000001771 vacuum deposition Methods 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- -1 atom ions Chemical class 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 6
- 229910052785 arsenic Inorganic materials 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 6
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 238000001000 micrograph Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910005898 GeSn Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- QTQRGDBFHFYIBH-UHFFFAOYSA-N tert-butylarsenic Chemical compound CC(C)(C)[As] QTQRGDBFHFYIBH-UHFFFAOYSA-N 0.000 description 2
- ZGNPLWZYVAFUNZ-UHFFFAOYSA-N tert-butylphosphane Chemical compound CC(C)(C)P ZGNPLWZYVAFUNZ-UHFFFAOYSA-N 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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Abstract
【解決手段】シリコンに不純物原子が導入された不純物領域104を有するベース基板102と、不純物領域104に接して設けられている複数のシード体112と、複数のシード体112の各々に接して設けられ、複数のシード体112の各々とそれぞれ格子整合または擬格子整合する複数の化合物半導体114とを備える半導体基板100。当該半導体基板100は、ベース基板102上に設けられ、不純物領域104の少なくとも一部を露出する複数の開口が設けられた阻害体をさらに備えてもよい。
【選択図】図1
Description
(特許文献1)特開平8−274376号公報
半導体基板2300を作成し、当該半導体基板2300を用いた電子デバイスを作製した。半導体基板2300は、ベース基板2302、阻害体2306、シード体2312、および化合物半導体2314を備える。ベース基板2302として、Si基板の全体に不純物としてアンチモン(Sb)をドープしたn型の低抵抗Si基板を用いた。低抵抗Si基板の抵抗率は0.01Ω・cmであった。
実施例1と同様にして、Si基板上に、阻害体2306として酸化シリコン層を形成し、阻害体2306の一部にベース基板2302を露出する複数の開口を形成した。このベース基板2302を反応容器の内部に配置し、シード体2312として、CVD法によりGe結晶層を形成した。Ge結晶層は、酸化シリコン層の開口の内部に選択的に形成した。Ge結晶層の成長条件は、実施例1と同様にした。さらに反応容器中で、Ge結晶層をアニールした。アニール条件は、実施例1と同様にした。
Claims (22)
- シリコンに不純物原子が導入された不純物領域を有するベース基板と、
前記不純物領域に接して設けられている複数のシード体と、
各々対応するシード体に接して設けられ、対応する前記シード体とそれぞれ格子整合または擬格子整合する複数の化合物半導体と
を備える半導体基板。 - 前記ベース基板上に設けられ、前記不純物領域の少なくとも一部を露出する複数の開口が設けられた阻害体をさらに備え、
前記複数のシード体の各々は、前記複数の開口の各々の内部に設けられ、
前記阻害体は、前記複数の化合物半導体の結晶成長を阻害する請求項1に記載の半導体基板。 - 前記複数の化合物半導体の少なくとも1つの化合物半導体を核として前記阻害体上にラテラル成長したラテラル成長化合物半導体をさらに備える請求項2に記載の半導体基板。
- 前記ベース基板は、シリコン原子を主成分とするシリコン領域を有し、
前記不純物領域が、前記ベース基板の内部において前記シリコン領域に接触している請求項1から請求項3の何れか一項に記載の半導体基板。 - 前記ベース基板は、第1伝導型の不純物原子を含む第1伝導型不純物領域を有し、
前記不純物領域は、前記第1伝導型不純物領域における前記第1伝導型の不純物原子の濃度よりも高い濃度の、前記第1伝導型と反対の伝導型の第2伝導型の不純物原子を含む第2伝導型高濃度不純物領域を有する請求項1から請求項4の何れか一項に記載の半導体基板。 - 前記第1伝導型不純物領域と前記第2伝導型高濃度不純物領域との間に、前記第2伝導型高濃度不純物領域より低い濃度の前記第2伝導型の不純物原子を含む第2伝導型低濃度不純物領域をさらに備える請求項5に記載の半導体基板。
- 前記不純物領域が、前記ベース基板が前記複数のシード体に接する表面から前記表面と反対側の面まで形成されている請求項1から請求項6の何れか一項に記載の半導体基板。
- 前記複数のシード体の各々が、CxSiyGezSn1−x−y−z(0≦x<1、0≦y≦1、0≦z≦1、かつ0<x+y+z≦1)を含む請求項1から請求項7の何れか一項に記載の半導体基板。
- 前記ベース基板がSi基板またはSOI基板である請求項1から請求項8の何れか一項に記載の半導体基板。
- 前記不純物領域における抵抗率が0.0001Ω・cm以上1Ω・cm以下である請求項1から請求項9の何れか一項に記載の半導体基板。
- 請求項1から請求項10の何れか一項に記載の半導体基板における前記複数の化合物半導体のうち、少なくとも1つの化合物半導体上に設けられた化合物半導体素子を備え、
前記化合物半導体素子は複数の端子を有し、
前記複数の端子のうち少なくとも1つの端子は、前記化合物半導体素子が設けられている前記化合物半導体に接する少なくとも1つの前記複数のシード体を介して、前記不純物領域に電気的に結合されている電子デバイス。 - 前記複数の化合物半導体のうちの第1化合物半導体に設けられた第1化合物半導体素子と、
前記複数の化合物半導体のうちの前記第1化合物半導体と異なる第2化合物半導体に設けられた第2化合物半導体素子と
を備え、
前記第1化合物半導体素子の前記複数の端子のうち少なくとも1つの端子と、前記第2化合物半導体素子の前記複数の端子のうち少なくとも1つの端子とが、前記不純物領域を介して電気的に結合されている請求項11に記載の電子デバイス。 - 前記複数の化合物半導体に設けられた前記化合物半導体素子の少なくとも一つは、ヘテロ接合バイポーラトランジスタであり、
前記ヘテロ接合バイポーラトランジスタのコレクタが前記複数のシード体の少なくとも一つを介して前記不純物領域に電気的に結合されている請求項11または請求項12に記載の電子デバイス。 - 前記複数の化合物半導体に設けられた前記化合物半導体素子の少なくとも一つは、ヘテロ接合バイポーラトランジスタであり、
前記ヘテロ接合バイポーラトランジスタのエミッタが前記複数のシード体の少なくとも一つを介して前記不純物領域に電気的に結合されている請求項11または請求項12に記載の電子デバイス。 - 前記第1化合物半導体素子または前記第2化合物半導体素子の少なくとも1つは、エミッタ、ベース、またはコレクタの何れか1つをコモン端子とする、ヘテロ接合バイポーラトランジスタであり、
前記ヘテロ接合バイポーラトランジスタ以外の前記第1化合物半導体素子または前記第2化合物半導体素子の少なくとも1つは、コモン端子および出力端子を有するセンサ素子であり、
前記ヘテロ接合バイポーラトランジスタの前記コモン端子と前記センサ素子の前記コモン端子とが、前記不純物領域を介して電気的に結合されている請求項12に記載の電子デバイス。 - 前記ヘテロ接合バイポーラトランジスタは、前記センサ素子の前記出力端子からの信号を増幅する請求項15に記載の電子デバイス。
- 前記ベース基板に設けられた第1伝導型の不純物原子を含む第1伝導型不純物領域に設けられ、複数の端子を有し、シリコン原子を主成分とする活性領域を有するシリコン素子をさらに備え、
前記シリコン素子の前記複数の端子のうち少なくとも1つの端子と、前記複数の化合物半導体に設けられた前記化合物半導体素子の前記複数の端子のうち少なくとも1つの端子とが、前記不純物領域を介して電気的に結合されている請求項11から請求項16の何れか一項に記載の電子デバイス。 - シリコンに不純物原子が導入された不純物領域を有するベース基板を準備する段階と、
前記不純物領域に接して、複数のシード体を形成する段階と、
前記複数のシード体を加熱する段階と、
加熱された前記複数のシード体に、前記複数のシード体と格子整合または擬格子整合する化合物半導体を形成する段階と
を備える半導体基板の製造方法。 - 前記ベース基板を準備する段階において、前記ベース基板の表面にマスクパターンを形成し、前記マスクパターンで画定された領域に前記不純物原子を高濃度にドープする請求項18に記載の半導体基板の製造方法。
- 前記ベース基板を準備する段階において、前記ベース基板の表面に、結晶の成長を阻害する阻害体を形成し、前記阻害体に、前記ベース基板の少なくとも一部を露出する開口を形成し、前記ベース基板における前記開口により露出された領域に前記不純物原子を高濃度にドープする請求項18または請求項19に記載の半導体基板の製造方法。
- 前記化合物半導体を核として、前記阻害体上にラテラル成長化合物半導体をラテラル成長させる段階をさらに備える請求項20に記載の半導体基板の製造方法。
- 請求項18から請求項21の何れか一項に記載の半導体基板の製造方法を用いて前記半導体基板を製造する段階と、
前記化合物半導体に、少なくとも1つの端子が前記複数のシード体の少なくとも一つを介して前記不純物領域に電気的に結合される化合物半導体素子を形成する段階と
備える電子デバイスの製造方法。
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