JP5669359B2 - 半導体基板、半導体基板の製造方法および電子デバイス - Google Patents
半導体基板、半導体基板の製造方法および電子デバイス Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 265
- 239000000758 substrate Substances 0.000 title claims description 121
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 150000001875 compounds Chemical class 0.000 claims description 231
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 85
- 229910052710 silicon Inorganic materials 0.000 claims description 85
- 239000010703 silicon Substances 0.000 claims description 85
- 239000013078 crystal Substances 0.000 claims description 62
- 230000007547 defect Effects 0.000 claims description 50
- 238000000034 method Methods 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 11
- 239000010408 film Substances 0.000 description 120
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 21
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 6
- 239000002994 raw material Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 208000012868 Overgrowth Diseases 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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Description
Claims (14)
- シリコン基板と、
前記シリコン基板の上に形成された絶縁膜であって、前記シリコン基板に達しアスペクト比が√3/3以上の開口を有する絶縁膜と、
前記開口に形成された化合物半導体結晶であって前記絶縁膜の表面よりも凸に形成された第1シード化合物半導体結晶と、
前記第1シード化合物半導体結晶の第1特定面を核として前記絶縁膜の上にラテラル成長された第2シード化合物半導体結晶と、
前記第2シード化合物半導体結晶の第2特定面をシード面として、前記絶縁膜の上にラテラル成長されたラテラル成長化合物半導体層と、
を備え、
前記第1特定面の面方位が、前記開口の底部における前記シリコン基板の表面の面方位と異なり、前記第2特定面の面方位が、前記第1特定面の面方位および前記開口の底部における前記シリコン基板の表面の面方位と異なる
半導体基板。 - 前記開口の、前記シリコン基板の表面と平行な方向の最大幅寸法は5μm以下である、
請求項1に記載の半導体基板。 - 前記ラテラル成長化合物半導体層または前記第2シード化合物半導体結晶は、欠陥を含む欠陥領域を有し、
前記欠陥領域は、前記シード面または前記絶縁膜に所定の間隔で形成された欠陥中心により配置が制御されている、
請求項1または請求項2に記載の半導体基板。 - 前記ラテラル成長化合物半導体層は、欠陥を含む欠陥領域を有し、
前記欠陥領域は、前記開口を所定の間隔で形成することにより配置が制御されている、
請求項1または請求項2に記載の半導体基板。 - 前記絶縁膜に前記開口が複数形成され、前記複数の開口のそれぞれに対応して形成された前記ラテラル成長化合物半導体層が、前記絶縁膜の上で互いに離間している、
請求項1から請求項4の何れか一項に記載の半導体基板。 - 前記ラテラル成長化合物半導体層は、2−6族化合物半導体または3−5族化合物半導体を含む、
請求項1から請求項5の何れか一項に記載の半導体基板。 - シリコン基板に絶縁膜を形成する段階と、
前記絶縁膜に、前記シリコン基板に達しアスペクト比が√3/3以上の開口を形成する段階と、
前記開口に第1シード化合物半導体結晶を前記絶縁膜の表面よりも凸に形成する段階と、
前記第1シード化合物半導体結晶の第1特定面を核として前記絶縁膜の上に第2シード化合物半導体結晶をラテラル成長させる段階と、
前記第2シード化合物半導体結晶の第2特定面をシード面として、前記絶縁膜の上にラテラル成長化合物半導体層をラテラル成長させる段階と、
を備え、
前記第1特定面の面方位が、前記開口の底部における前記シリコン基板の表面の面方位と異なり、前記第2特定面の面方位が、前記第1特定面の面方位および前記開口の底部における前記シリコン基板の表面の面方位と異なる
半導体基板の製造方法。 - 前記第2シード化合物半導体のシード面または前記絶縁膜に、所定の間隔の欠陥中心を形成する段階、
をさらに備えた請求項7に記載の半導体基板の製造方法。 - シリコン基板と、
前記シリコン基板の上に形成された絶縁膜であって、前記シリコン基板に達しアスペクト比が√3/3以上の開口を有する絶縁膜と、
前記開口に形成された化合物半導体結晶であって前記絶縁膜の表面よりも凸に形成された第1シード化合物半導体結晶と、
前記第1シード化合物半導体結晶の第1特定面を核として前記絶縁膜の上にラテラル成長された第2シード化合物半導体結晶と、
前記第2シード化合物半導体結晶の第2特定面をシード面として、前記絶縁膜の上にラテラル成長されたラテラル成長化合物半導体層と、
前記ラテラル成長化合物半導体層の無欠陥領域の上に活性領域を有する能動素子と、
を備え、
前記第1特定面の面方位が、前記開口の底部における前記シリコン基板の表面の面方位と異なり、前記第2特定面の面方位が、前記第1特定面の面方位および前記開口の底部における前記シリコン基板の表面の面方位と異なる
電子デバイス。 - 前記能動素子は第1入出力電極および第2入出力電極を有し、
前記第1入出力電極は、前記ラテラル成長化合物半導体層の成長面を覆う、
請求項9に記載の電子デバイス。 - 前記能動素子は第1入出力電極および第2入出力電極を有し、
前記開口を含む領域上の前記ラテラル成長化合物半導体層は、エッチングにより除去さ
れており、
前記第2入出力電極は、前記エッチングにより露出した前記ラテラル成長化合物半導体
層の側面を覆う、
請求項9または請求項10に記載の電子デバイス。 - 前記第2入出力電極は、前記エッチングにより露出した前記絶縁膜の開口に形成された
前記第1シード化合物半導体結晶を介して前記シリコン基板に接続される、
請求項11に記載の電子デバイス。 - 前記能動素子は入出力間の電流または電圧を制御する制御電極を有し、
前記制御電極は、前記絶縁膜と前記ラテラル成長化合物半導体層との間、および、前記
ラテラル成長化合物半導体層の前記絶縁膜の反対側に、互いに対向して形成されている、
請求項9から請求項12の何れか一項に記載の電子デバイス。 - 前記能動素子が相互に接続されている、
請求項9から請求項13の何れか一項に記載の電子デバイス。
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US (1) | US20110006368A1 (ja) |
JP (1) | JP5669359B2 (ja) |
KR (1) | KR20100123681A (ja) |
CN (1) | CN101946307B (ja) |
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US8304805B2 (en) * | 2009-01-09 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor diodes fabricated by aspect ratio trapping with coalesced films |
WO2010038464A1 (ja) * | 2008-10-02 | 2010-04-08 | 住友化学株式会社 | 半導体基板、電子デバイス、および半導体基板の製造方法 |
US8686472B2 (en) | 2008-10-02 | 2014-04-01 | Sumitomo Chemical Company, Limited | Semiconductor substrate, electronic device and method for manufacturing semiconductor substrate |
US8823141B2 (en) | 2009-03-11 | 2014-09-02 | Sumitomo Chemical Company, Limited | Semiconductor wafer, method of producing semiconductor wafer, electronic device, and method of producing electronic device |
WO2010134334A1 (ja) | 2009-05-22 | 2010-11-25 | 住友化学株式会社 | 半導体基板、電子デバイス、半導体基板の製造方法及び電子デバイスの製造方法 |
WO2010140370A1 (ja) | 2009-06-05 | 2010-12-09 | 住友化学株式会社 | 光デバイス、半導体基板、光デバイスの製造方法、および半導体基板の製造方法 |
CN102449775B (zh) | 2009-06-05 | 2014-07-02 | 独立行政法人产业技术综合研究所 | 半导体基板、光电转换器件、半导体基板的制造方法和光电转换器件的制造方法 |
KR101671552B1 (ko) | 2009-06-05 | 2016-11-01 | 내셔날 인스티튜트 오브 어드밴스드 인더스트리얼 사이언스 앤드 테크놀로지 | 센서, 반도체 기판 및 반도체 기판의 제조 방법 |
JP2011082332A (ja) * | 2009-10-07 | 2011-04-21 | National Chiao Tung Univ | 高電子移動度トランジスタの構造、その構造を含んだデバイス及びその製造方法 |
KR20120127419A (ko) * | 2010-02-26 | 2012-11-21 | 스미또모 가가꾸 가부시키가이샤 | 전자 디바이스 및 전자 디바이스의 제조 방법 |
KR101932576B1 (ko) | 2010-09-13 | 2018-12-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
JP5943645B2 (ja) | 2011-03-07 | 2016-07-05 | 住友化学株式会社 | 半導体基板、半導体装置および半導体基板の製造方法 |
GB201415119D0 (en) * | 2014-08-27 | 2014-10-08 | Ibm | Method for fabricating a semiconductor structure |
US10763188B2 (en) * | 2015-12-23 | 2020-09-01 | Intel Corporation | Integrated heat spreader having electromagnetically-formed features |
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JPS6412577A (en) * | 1987-07-06 | 1989-01-17 | Canon Kk | Thin film transistor |
JPH05259071A (ja) * | 1992-03-11 | 1993-10-08 | Sumitomo Metal Ind Ltd | エピタキシャルウエハ及びその製造方法 |
JPH098309A (ja) * | 1995-06-15 | 1997-01-10 | Citizen Watch Co Ltd | 半導体集積回路装置およびその製造方法 |
US6500257B1 (en) * | 1998-04-17 | 2002-12-31 | Agilent Technologies, Inc. | Epitaxial material grown laterally within a trench and method for producing same |
US6580098B1 (en) * | 1999-07-27 | 2003-06-17 | Toyoda Gosei Co., Ltd. | Method for manufacturing gallium nitride compound semiconductor |
JP2002118234A (ja) * | 2000-10-05 | 2002-04-19 | Nissan Motor Co Ltd | 半導体装置 |
US7008839B2 (en) * | 2002-03-08 | 2006-03-07 | Matsushita Electric Industrial Co., Ltd. | Method for manufacturing semiconductor thin film |
US7012314B2 (en) * | 2002-12-18 | 2006-03-14 | Agere Systems Inc. | Semiconductor devices with reduced active region defects and unique contacting schemes |
JP4320193B2 (ja) * | 2003-03-18 | 2009-08-26 | 重弥 成塚 | 薄膜形成方法 |
US7579263B2 (en) * | 2003-09-09 | 2009-08-25 | Stc.Unm | Threading-dislocation-free nanoheteroepitaxy of Ge on Si using self-directed touch-down of Ge through a thin SiO2 layer |
US7138316B2 (en) * | 2003-09-23 | 2006-11-21 | Intel Corporation | Semiconductor channel on insulator structure |
EP2595175B1 (en) * | 2005-05-17 | 2019-04-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating a lattice-mismatched semiconductor structure with reduced dislocation defect densities |
JP2007335801A (ja) * | 2006-06-19 | 2007-12-27 | Toshiba Corp | 半導体装置およびその製造方法 |
FR2910700B1 (fr) * | 2006-12-21 | 2009-03-20 | Commissariat Energie Atomique | PROCEDE DE FABRICATION D'UN SUBSTRAT SOI ASSOCIANT DES ZONES A BASE DE SILICIUM ET DES ZONES A BASE DE GaAs |
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- 2009-02-27 TW TW098106663A patent/TW200949907A/zh unknown
- 2009-02-27 CN CN200980105553.0A patent/CN101946307B/zh not_active Expired - Fee Related
- 2009-02-27 WO PCT/JP2009/000921 patent/WO2009110208A1/ja active Application Filing
- 2009-02-27 KR KR1020107016273A patent/KR20100123681A/ko not_active Application Discontinuation
- 2009-02-27 US US12/920,457 patent/US20110006368A1/en not_active Abandoned
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WO2009110208A1 (ja) | 2009-09-11 |
CN101946307A (zh) | 2011-01-12 |
CN101946307B (zh) | 2012-12-19 |
KR20100123681A (ko) | 2010-11-24 |
TW200949907A (en) | 2009-12-01 |
JP2009239268A (ja) | 2009-10-15 |
US20110006368A1 (en) | 2011-01-13 |
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