DK0459771T3 - Elektrode til en vertikal felteffekttransistor og fremgangsmåde til fremstilling af denne - Google Patents

Elektrode til en vertikal felteffekttransistor og fremgangsmåde til fremstilling af denne

Info

Publication number
DK0459771T3
DK0459771T3 DK91304828.6T DK91304828T DK0459771T3 DK 0459771 T3 DK0459771 T3 DK 0459771T3 DK 91304828 T DK91304828 T DK 91304828T DK 0459771 T3 DK0459771 T3 DK 0459771T3
Authority
DK
Denmark
Prior art keywords
area
semiconductor
electrode
conductive type
producing
Prior art date
Application number
DK91304828.6T
Other languages
English (en)
Inventor
Hayao Ohzu
Tetsunobu Kochi
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of DK0459771T3 publication Critical patent/DK0459771T3/da

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub
DK91304828.6T 1990-05-31 1991-05-29 Elektrode til en vertikal felteffekttransistor og fremgangsmåde til fremstilling af denne DK0459771T3 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP13961890 1990-05-31
JP20814590 1990-08-08

Publications (1)

Publication Number Publication Date
DK0459771T3 true DK0459771T3 (da) 1997-09-22

Family

ID=26472367

Family Applications (1)

Application Number Title Priority Date Filing Date
DK91304828.6T DK0459771T3 (da) 1990-05-31 1991-05-29 Elektrode til en vertikal felteffekttransistor og fremgangsmåde til fremstilling af denne

Country Status (10)

Country Link
US (2) US5378914A (da)
EP (1) EP0459771B1 (da)
JP (1) JP3067263B2 (da)
CN (1) CN1052343C (da)
AT (1) ATE157482T1 (da)
DE (1) DE69127402T2 (da)
DK (1) DK0459771T3 (da)
ES (1) ES2104668T3 (da)
GR (1) GR3025139T3 (da)
MY (1) MY107475A (da)

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US6804142B2 (en) * 2002-11-12 2004-10-12 Micron Technology, Inc. 6F2 3-transistor DRAM gain cell
US7838875B1 (en) 2003-01-22 2010-11-23 Tsang Dean Z Metal transistor device
US6747306B1 (en) 2003-02-04 2004-06-08 International Business Machines Corporation Vertical gate conductor with buried contact layer for increased contact landing area
US6956256B2 (en) * 2003-03-04 2005-10-18 Micron Technology Inc. Vertical gain cell
US6838332B1 (en) * 2003-08-15 2005-01-04 Freescale Semiconductor, Inc. Method for forming a semiconductor device having electrical contact from opposite sides
DE102006030631B4 (de) * 2006-07-03 2011-01-05 Infineon Technologies Austria Ag Halbleiterbauelementanordnung mit einem Leistungsbauelement und einem Logikbauelement
KR100949890B1 (ko) * 2007-12-11 2010-03-25 주식회사 하이닉스반도체 반도체 소자 및 그 제조 방법
KR100922557B1 (ko) * 2007-12-27 2009-10-21 주식회사 동부하이텍 Ｃｍｏｓ 트랜지스터 및 그 제조 방법
JP5493669B2 (ja) * 2009-10-07 2014-05-14 ソニー株式会社 固体撮像装置、撮像装置、および固体撮像装置の製造方法
CN102403256B (zh) * 2010-09-08 2014-02-26 上海华虹宏力半导体制造有限公司 赝埋层及制造方法、深孔接触及三极管
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Also Published As

Publication number Publication date
DE69127402T2 (de) 1998-01-02
EP0459771A2 (en) 1991-12-04
MY107475A (en) 1995-12-30
CN1052343C (zh) 2000-05-10
DE69127402D1 (de) 1997-10-02
ES2104668T3 (es) 1997-10-16
GR3025139T3 (en) 1998-02-27
CN1057736A (zh) 1992-01-08
JPH04226075A (ja) 1992-08-14
EP0459771B1 (en) 1997-08-27
EP0459771A3 (en) 1992-02-05
US5583075A (en) 1996-12-10
JP3067263B2 (ja) 2000-07-17
ATE157482T1 (de) 1997-09-15
US5378914A (en) 1995-01-03

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