JPS57162457A - Semiconductor memory unit - Google Patents

Semiconductor memory unit

Info

Publication number
JPS57162457A
JPS57162457A JP56047448A JP4744881A JPS57162457A JP S57162457 A JPS57162457 A JP S57162457A JP 56047448 A JP56047448 A JP 56047448A JP 4744881 A JP4744881 A JP 4744881A JP S57162457 A JPS57162457 A JP S57162457A
Authority
JP
Japan
Prior art keywords
region
source region
memory unit
type channel
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56047448A
Other languages
Japanese (ja)
Inventor
Kazunari Shirai
Izumi Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56047448A priority Critical patent/JPS57162457A/en
Publication of JPS57162457A publication Critical patent/JPS57162457A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices

Abstract

PURPOSE:To enhance integration of a memory unit at a static RAM assembled with a complementary MOS transistor by a method wherein a penetrating hole is provided in the source region of an N type channel transistor constituting the RAM, and the source region and the well region are connected directly by a conductor inserted in the hole. CONSTITUTION:The static RAM is constituted of P type channel MOS transistors 11, 12 and N type channel MOS transistors 13-16, and a word line 17 and bit lines 18, 19 are connected thereto. At this consitution, the next process is performed for the transistors 14, 15. Namely, the source region 32 and the drain region 33 are provided in the well region 3, a gate pole 38 is provided on the region 3 being positioned between them interposing a gate oxide film 36 between them, and moreover the panetrating hole 41 is provided in the source region 32, the Al conductor 42 is buried therein, and the source region 32 is connected directly to the region 3. Accordingly the memory unit is formed in high density, and integration is enhanced.
JP56047448A 1981-03-31 1981-03-31 Semiconductor memory unit Pending JPS57162457A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56047448A JPS57162457A (en) 1981-03-31 1981-03-31 Semiconductor memory unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56047448A JPS57162457A (en) 1981-03-31 1981-03-31 Semiconductor memory unit

Publications (1)

Publication Number Publication Date
JPS57162457A true JPS57162457A (en) 1982-10-06

Family

ID=12775424

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56047448A Pending JPS57162457A (en) 1981-03-31 1981-03-31 Semiconductor memory unit

Country Status (1)

Country Link
JP (1) JPS57162457A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5378914A (en) * 1990-05-31 1995-01-03 Canon Kabushiki Kaisha Semiconductor device with a particular source/drain and gate structure

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53108382A (en) * 1977-03-04 1978-09-21 Hitachi Ltd Semiconductor device
JPS5583264A (en) * 1978-12-19 1980-06-23 Fujitsu Ltd Method of fabricating mos semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53108382A (en) * 1977-03-04 1978-09-21 Hitachi Ltd Semiconductor device
JPS5583264A (en) * 1978-12-19 1980-06-23 Fujitsu Ltd Method of fabricating mos semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5583075A (en) * 1990-05-13 1996-12-10 Canon Kabushiki Kaisha Method for producing a semiconductor device with a particular source/drain and gate structure
US5378914A (en) * 1990-05-31 1995-01-03 Canon Kabushiki Kaisha Semiconductor device with a particular source/drain and gate structure

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