ES2104668T3 - Electrodo para transistor vertical con efecto de campo y metodo para la fabricacion del mismo. - Google Patents
Electrodo para transistor vertical con efecto de campo y metodo para la fabricacion del mismo.Info
- Publication number
- ES2104668T3 ES2104668T3 ES91304828T ES91304828T ES2104668T3 ES 2104668 T3 ES2104668 T3 ES 2104668T3 ES 91304828 T ES91304828 T ES 91304828T ES 91304828 T ES91304828 T ES 91304828T ES 2104668 T3 ES2104668 T3 ES 2104668T3
- Authority
- ES
- Spain
- Prior art keywords
- area
- semiconductor
- electrode
- conductive type
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 abstract 8
- 230000010354 integration Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
SE PRESENTA UN DISPOSITIVO SEMICONDUCTOR CON ELEMENTOS FUNCIONALES MUY PEQUEÑOS, QUE SE PUEDE CONSTRUIR UTILIZANDO LOS COMPONENTES MINIMOS NECESARIOS SIN NINGUN AREA DE SUPERFICIE INNECESARIA, SIENDO ASI CAPAZ DE REDUCIR SIGNIFICATIVAMENTE EL AREA DE DISTRIBUCION Y ADAPTADA PARA LOGRAR UNA GEOMETRIA FINA Y UN ALTO NIVEL DE INTEGRACION. EL DISPOSITIVO SEMICONDUCTOR TIENE UNA PRIMERA AREA SEMICONDUCTORA DE UN PRIMER TIPO CONDUCTIVO (POR EJEMPLO UN POZO P) Y UNA SEGUNDA AREA SEMICONDUCTORA COLOCADA ENCIMA O DEBAJO DE LA PRIMERA AREA SEMICONDUCTORA Y QUE TIENE UN SEGUNDO TIPO CONDUCTIVO DIFERENTE DEL PRIMER TIPO CONDUCTIVO (POR EJEMPLO UN AREA GENERADORA O DE CONSUMO DE ENERGIA) EN QUE SE FORMA UN ELECTRODO CONECTADO A LA PRIMERA AREA SEMICONDUCTORA A TRAVES DE LA SEGUNDA AREA SEMICONDUCTORA Y LA PRIMERA Y LA SEGUNDA AREAS SEMICONDUCTORAS SON CORTOCIRCUITEADAS POR EL ELECTRODO ARRIBA MENCIONADO.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13961890 | 1990-05-31 | ||
JP20814590 | 1990-08-08 |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2104668T3 true ES2104668T3 (es) | 1997-10-16 |
Family
ID=26472367
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES91304828T Expired - Lifetime ES2104668T3 (es) | 1990-05-31 | 1991-05-29 | Electrodo para transistor vertical con efecto de campo y metodo para la fabricacion del mismo. |
Country Status (10)
Country | Link |
---|---|
US (2) | US5378914A (es) |
EP (1) | EP0459771B1 (es) |
JP (1) | JP3067263B2 (es) |
CN (1) | CN1052343C (es) |
AT (1) | ATE157482T1 (es) |
DE (1) | DE69127402T2 (es) |
DK (1) | DK0459771T3 (es) |
ES (1) | ES2104668T3 (es) |
GR (1) | GR3025139T3 (es) |
MY (1) | MY107475A (es) |
Families Citing this family (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0661266A (ja) * | 1992-08-06 | 1994-03-04 | Mitsubishi Electric Corp | 半導体装置とその製造方法 |
JPH07130871A (ja) * | 1993-06-28 | 1995-05-19 | Toshiba Corp | 半導体記憶装置 |
DE4340967C1 (de) * | 1993-12-01 | 1994-10-27 | Siemens Ag | Verfahren zur Herstellung einer integrierten Schaltungsanordnung mit mindestens einem MOS-Transistor |
DE4341667C1 (de) * | 1993-12-07 | 1994-12-01 | Siemens Ag | Integrierte Schaltungsanordnung mit mindestens einem CMOS-NAND-Gatter und Verfahren zu deren Herstellung |
JP3338178B2 (ja) * | 1994-05-30 | 2002-10-28 | 株式会社東芝 | 半導体装置およびその製造方法 |
US5510287A (en) * | 1994-11-01 | 1996-04-23 | Taiwan Semiconductor Manuf. Company | Method of making vertical channel mask ROM |
US5455190A (en) * | 1994-12-07 | 1995-10-03 | United Microelectronics Corporation | Method of making a vertical channel device using buried source techniques |
JP3303601B2 (ja) * | 1995-05-19 | 2002-07-22 | 日産自動車株式会社 | 溝型半導体装置 |
GB9512089D0 (en) * | 1995-06-14 | 1995-08-09 | Evans Jonathan L | Semiconductor device fabrication |
US6917083B1 (en) * | 1995-07-27 | 2005-07-12 | Micron Technology, Inc. | Local ground and VCC connection in an SRAM cell |
EP0864178A4 (en) * | 1995-10-02 | 2001-10-10 | Siliconix Inc | SLIDED GRID MOSFET HAVING AN INTEGRATED TEMPERATURE SENSING DIODE |
JP3141769B2 (ja) * | 1996-02-13 | 2001-03-05 | 富士電機株式会社 | 絶縁ゲート型サイリスタ及びその製造方法 |
US5929476A (en) * | 1996-06-21 | 1999-07-27 | Prall; Kirk | Semiconductor-on-insulator transistor and memory circuitry employing semiconductor-on-insulator transistors |
JP3397057B2 (ja) * | 1996-11-01 | 2003-04-14 | 日産自動車株式会社 | 半導体装置 |
JPH10290007A (ja) * | 1997-04-14 | 1998-10-27 | Sharp Corp | 半導体装置およびその製造方法 |
US5909618A (en) * | 1997-07-08 | 1999-06-01 | Micron Technology, Inc. | Method of making memory cell with vertical transistor and buried word and body lines |
US6150687A (en) | 1997-07-08 | 2000-11-21 | Micron Technology, Inc. | Memory cell having a vertical transistor with buried source/drain and dual gates |
US5969423A (en) * | 1997-07-15 | 1999-10-19 | Micron Technology, Inc. | Aluminum-containing films derived from using hydrogen and oxygen gas in sputter deposition |
US6222271B1 (en) * | 1997-07-15 | 2001-04-24 | Micron Technology, Inc. | Method of using hydrogen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom |
US6528837B2 (en) * | 1997-10-06 | 2003-03-04 | Micron Technology, Inc. | Circuit and method for an open bit line memory cell with a vertical transistor and trench plate trench capacitor |
US6066869A (en) * | 1997-10-06 | 2000-05-23 | Micron Technology, Inc. | Circuit and method for a folded bit line memory cell with vertical transistor and trench capacitor |
JPH11186194A (ja) * | 1997-12-19 | 1999-07-09 | Nec Corp | 半導体装置の製造方法 |
US6100123A (en) | 1998-01-20 | 2000-08-08 | International Business Machines Corporation | Pillar CMOS structure |
US6025225A (en) * | 1998-01-22 | 2000-02-15 | Micron Technology, Inc. | Circuits with a trench capacitor having micro-roughened semiconductor surfaces and methods for forming the same |
US6020239A (en) * | 1998-01-28 | 2000-02-01 | International Business Machines Corporation | Pillar transistor incorporating a body contact |
US6246083B1 (en) * | 1998-02-24 | 2001-06-12 | Micron Technology, Inc. | Vertical gain cell and array for a dynamic random access memory |
US6124729A (en) * | 1998-02-27 | 2000-09-26 | Micron Technology, Inc. | Field programmable logic arrays with vertical transistors |
US6057238A (en) * | 1998-03-20 | 2000-05-02 | Micron Technology, Inc. | Method of using hydrogen and oxygen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom |
US6208164B1 (en) | 1998-08-04 | 2001-03-27 | Micron Technology, Inc. | Programmable logic array with vertical transistors |
US6204123B1 (en) | 1998-10-30 | 2001-03-20 | Sony Corporation | Vertical floating gate transistor with epitaxial channel |
US6194741B1 (en) * | 1998-11-03 | 2001-02-27 | International Rectifier Corp. | MOSgated trench type power semiconductor with silicon carbide substrate and increased gate breakdown voltage and reduced on-resistance |
AU3716000A (en) * | 1999-03-01 | 2000-09-21 | General Semiconductor, Inc. | Trench dmos transistor structure having a low resistance path to a drain contactlocated on an upper surface |
US6500744B2 (en) | 1999-09-02 | 2002-12-31 | Micron Technology, Inc. | Methods of forming DRAM assemblies, transistor devices, and openings in substrates |
JP3899231B2 (ja) * | 2000-12-18 | 2007-03-28 | 株式会社豊田中央研究所 | 半導体装置 |
US6551881B1 (en) * | 2001-10-01 | 2003-04-22 | Koninklijke Philips Electronics N.V. | Self-aligned dual-oxide umosfet device and a method of fabricating same |
DE10231966A1 (de) * | 2002-07-15 | 2004-02-12 | Infineon Technologies Ag | Feldeffekttransistor, zugehörige Verwendung und zugehöriges Herstellungsverfahren |
US7224024B2 (en) * | 2002-08-29 | 2007-05-29 | Micron Technology, Inc. | Single transistor vertical memory gain cell |
US6838723B2 (en) * | 2002-08-29 | 2005-01-04 | Micron Technology, Inc. | Merged MOS-bipolar capacitor memory cell |
JP4028333B2 (ja) * | 2002-09-02 | 2007-12-26 | 株式会社東芝 | 半導体装置 |
US6804142B2 (en) * | 2002-11-12 | 2004-10-12 | Micron Technology, Inc. | 6F2 3-transistor DRAM gain cell |
US7838875B1 (en) | 2003-01-22 | 2010-11-23 | Tsang Dean Z | Metal transistor device |
US6747306B1 (en) | 2003-02-04 | 2004-06-08 | International Business Machines Corporation | Vertical gate conductor with buried contact layer for increased contact landing area |
US6956256B2 (en) * | 2003-03-04 | 2005-10-18 | Micron Technology Inc. | Vertical gain cell |
US6838332B1 (en) * | 2003-08-15 | 2005-01-04 | Freescale Semiconductor, Inc. | Method for forming a semiconductor device having electrical contact from opposite sides |
DE102006030631B4 (de) * | 2006-07-03 | 2011-01-05 | Infineon Technologies Austria Ag | Halbleiterbauelementanordnung mit einem Leistungsbauelement und einem Logikbauelement |
KR100949890B1 (ko) * | 2007-12-11 | 2010-03-25 | 주식회사 하이닉스반도체 | 반도체 소자 및 그 제조 방법 |
KR100922557B1 (ko) * | 2007-12-27 | 2009-10-21 | 주식회사 동부하이텍 | Cmos 트랜지스터 및 그 제조 방법 |
JP5493669B2 (ja) * | 2009-10-07 | 2014-05-14 | ソニー株式会社 | 固体撮像装置、撮像装置、および固体撮像装置の製造方法 |
CN102403256B (zh) * | 2010-09-08 | 2014-02-26 | 上海华虹宏力半导体制造有限公司 | 赝埋层及制造方法、深孔接触及三极管 |
JP5075959B2 (ja) * | 2010-09-14 | 2012-11-21 | 株式会社東芝 | 抵抗変化メモリ |
US8704297B1 (en) * | 2012-10-12 | 2014-04-22 | Force Mos Technology Co., Ltd. | Trench metal oxide semiconductor field effect transistor with multiple trenched source-body contacts for reducing gate charge |
CN103137646A (zh) * | 2013-03-15 | 2013-06-05 | 中国科学院微电子研究所 | 用于双极型阻变存储器交叉阵列集成方式的选通器件单元 |
US9397094B2 (en) | 2014-09-25 | 2016-07-19 | International Business Machines Corporation | Semiconductor structure with an L-shaped bottom plate |
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DE2930780C2 (de) * | 1979-07-28 | 1982-05-27 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Verfahren zur Herstellung eines VMOS-Transistors |
JPS57162457A (en) * | 1981-03-31 | 1982-10-06 | Fujitsu Ltd | Semiconductor memory unit |
JPS6050063B2 (ja) * | 1982-08-24 | 1985-11-06 | 株式会社東芝 | 相補型mos半導体装置及びその製造方法 |
JPS60148147A (ja) * | 1984-01-13 | 1985-08-05 | Nec Corp | 半導体装置 |
JPS618969A (ja) * | 1984-06-25 | 1986-01-16 | Nec Corp | 半導体集積回路装置 |
US4768076A (en) * | 1984-09-14 | 1988-08-30 | Hitachi, Ltd. | Recrystallized CMOS with different crystal planes |
JPS61136682A (ja) * | 1984-12-05 | 1986-06-24 | Nec Corp | レ−ザcvd方法 |
JPH0793282B2 (ja) * | 1985-04-15 | 1995-10-09 | 株式会社日立製作所 | 半導体装置の製造方法 |
JPS6252969A (ja) * | 1985-08-30 | 1987-03-07 | Nippon Texas Instr Kk | 絶縁ゲ−ト型電界効果半導体装置 |
US4740826A (en) * | 1985-09-25 | 1988-04-26 | Texas Instruments Incorporated | Vertical inverter |
JPH0687500B2 (ja) * | 1987-03-26 | 1994-11-02 | 日本電気株式会社 | 半導体記憶装置およびその製造方法 |
JPS63288057A (ja) * | 1987-05-20 | 1988-11-25 | Sanyo Electric Co Ltd | Cmos半導体装置 |
US4845051A (en) * | 1987-10-29 | 1989-07-04 | Siliconix Incorporated | Buried gate JFET |
JPH01194437A (ja) * | 1988-01-29 | 1989-08-04 | Mitsubishi Electric Corp | 半導体装置 |
JPH01244546A (ja) * | 1988-03-25 | 1989-09-28 | Hokuriku Nippon Denki Software Kk | データ処理装置の機能診断方式 |
JPH01244646A (ja) * | 1988-03-25 | 1989-09-29 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US4898835A (en) * | 1988-10-12 | 1990-02-06 | Sgs-Thomson Microelectronics, Inc. | Single mask totally self-aligned power MOSFET cell fabrication process |
US5016070A (en) * | 1989-06-30 | 1991-05-14 | Texas Instruments Incorporated | Stacked CMOS sRAM with vertical transistors and cross-coupled capacitors |
EP0420594B1 (en) * | 1989-09-26 | 1996-04-17 | Canon Kabushiki Kaisha | Process for forming metal deposited film containing aluminium as main component by use of alkyl aluminium hydride |
JP2721023B2 (ja) * | 1989-09-26 | 1998-03-04 | キヤノン株式会社 | 堆積膜形成法 |
US5077228A (en) * | 1989-12-01 | 1991-12-31 | Texas Instruments Incorporated | Process for simultaneous formation of trench contact and vertical transistor gate and structure |
US5010386A (en) * | 1989-12-26 | 1991-04-23 | Texas Instruments Incorporated | Insulator separated vertical CMOS |
ATE139866T1 (de) * | 1990-02-19 | 1996-07-15 | Canon Kk | Verfahren zum herstellen von abgeschiedener metallschicht, die aluminium als hauptkomponente enthält, mit anwendung von alkylaluminiumhydrid |
-
1991
- 1991-05-27 MY MYPI91000927A patent/MY107475A/en unknown
- 1991-05-29 AT AT91304828T patent/ATE157482T1/de not_active IP Right Cessation
- 1991-05-29 DK DK91304828.6T patent/DK0459771T3/da active
- 1991-05-29 EP EP91304828A patent/EP0459771B1/en not_active Expired - Lifetime
- 1991-05-29 ES ES91304828T patent/ES2104668T3/es not_active Expired - Lifetime
- 1991-05-29 DE DE69127402T patent/DE69127402T2/de not_active Expired - Fee Related
- 1991-05-31 CN CN91104371.3A patent/CN1052343C/zh not_active Expired - Fee Related
- 1991-05-31 JP JP03129771A patent/JP3067263B2/ja not_active Expired - Fee Related
-
1992
- 1992-12-24 US US07/997,135 patent/US5378914A/en not_active Expired - Fee Related
-
1994
- 1994-12-05 US US08/352,050 patent/US5583075A/en not_active Expired - Lifetime
-
1997
- 1997-10-22 GR GR970402771T patent/GR3025139T3/el unknown
Also Published As
Publication number | Publication date |
---|---|
EP0459771A2 (en) | 1991-12-04 |
MY107475A (en) | 1995-12-30 |
US5378914A (en) | 1995-01-03 |
DE69127402D1 (de) | 1997-10-02 |
ATE157482T1 (de) | 1997-09-15 |
CN1052343C (zh) | 2000-05-10 |
JPH04226075A (ja) | 1992-08-14 |
DK0459771T3 (da) | 1997-09-22 |
GR3025139T3 (en) | 1998-02-27 |
EP0459771B1 (en) | 1997-08-27 |
EP0459771A3 (en) | 1992-02-05 |
DE69127402T2 (de) | 1998-01-02 |
US5583075A (en) | 1996-12-10 |
JP3067263B2 (ja) | 2000-07-17 |
CN1057736A (zh) | 1992-01-08 |
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FG2A | Definitive protection |
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