ES2104668T3 - Electrodo para transistor vertical con efecto de campo y metodo para la fabricacion del mismo. - Google Patents

Electrodo para transistor vertical con efecto de campo y metodo para la fabricacion del mismo.

Info

Publication number
ES2104668T3
ES2104668T3 ES91304828T ES91304828T ES2104668T3 ES 2104668 T3 ES2104668 T3 ES 2104668T3 ES 91304828 T ES91304828 T ES 91304828T ES 91304828 T ES91304828 T ES 91304828T ES 2104668 T3 ES2104668 T3 ES 2104668T3
Authority
ES
Spain
Prior art keywords
area
semiconductor
electrode
manufacture
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES91304828T
Other languages
English (en)
Inventor
Hayao Ohzu
Tetsunobu Kochi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of ES2104668T3 publication Critical patent/ES2104668T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/859—Complementary IGFETs, e.g. CMOS comprising both N-type and P-type wells, e.g. twin-tub

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

SE PRESENTA UN DISPOSITIVO SEMICONDUCTOR CON ELEMENTOS FUNCIONALES MUY PEQUEÑOS, QUE SE PUEDE CONSTRUIR UTILIZANDO LOS COMPONENTES MINIMOS NECESARIOS SIN NINGUN AREA DE SUPERFICIE INNECESARIA, SIENDO ASI CAPAZ DE REDUCIR SIGNIFICATIVAMENTE EL AREA DE DISTRIBUCION Y ADAPTADA PARA LOGRAR UNA GEOMETRIA FINA Y UN ALTO NIVEL DE INTEGRACION. EL DISPOSITIVO SEMICONDUCTOR TIENE UNA PRIMERA AREA SEMICONDUCTORA DE UN PRIMER TIPO CONDUCTIVO (POR EJEMPLO UN POZO P) Y UNA SEGUNDA AREA SEMICONDUCTORA COLOCADA ENCIMA O DEBAJO DE LA PRIMERA AREA SEMICONDUCTORA Y QUE TIENE UN SEGUNDO TIPO CONDUCTIVO DIFERENTE DEL PRIMER TIPO CONDUCTIVO (POR EJEMPLO UN AREA GENERADORA O DE CONSUMO DE ENERGIA) EN QUE SE FORMA UN ELECTRODO CONECTADO A LA PRIMERA AREA SEMICONDUCTORA A TRAVES DE LA SEGUNDA AREA SEMICONDUCTORA Y LA PRIMERA Y LA SEGUNDA AREAS SEMICONDUCTORAS SON CORTOCIRCUITEADAS POR EL ELECTRODO ARRIBA MENCIONADO.
ES91304828T 1990-05-31 1991-05-29 Electrodo para transistor vertical con efecto de campo y metodo para la fabricacion del mismo. Expired - Lifetime ES2104668T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP13961890 1990-05-31
JP20814590 1990-08-08

Publications (1)

Publication Number Publication Date
ES2104668T3 true ES2104668T3 (es) 1997-10-16

Family

ID=26472367

Family Applications (1)

Application Number Title Priority Date Filing Date
ES91304828T Expired - Lifetime ES2104668T3 (es) 1990-05-31 1991-05-29 Electrodo para transistor vertical con efecto de campo y metodo para la fabricacion del mismo.

Country Status (10)

Country Link
US (2) US5378914A (es)
EP (1) EP0459771B1 (es)
JP (1) JP3067263B2 (es)
CN (1) CN1052343C (es)
AT (1) ATE157482T1 (es)
DE (1) DE69127402T2 (es)
DK (1) DK0459771T3 (es)
ES (1) ES2104668T3 (es)
GR (1) GR3025139T3 (es)
MY (1) MY107475A (es)

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JP3899231B2 (ja) * 2000-12-18 2007-03-28 株式会社豊田中央研究所 半導体装置
US6551881B1 (en) * 2001-10-01 2003-04-22 Koninklijke Philips Electronics N.V. Self-aligned dual-oxide umosfet device and a method of fabricating same
DE10231966A1 (de) 2002-07-15 2004-02-12 Infineon Technologies Ag Feldeffekttransistor, zugehörige Verwendung und zugehöriges Herstellungsverfahren
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Also Published As

Publication number Publication date
EP0459771A2 (en) 1991-12-04
US5583075A (en) 1996-12-10
CN1057736A (zh) 1992-01-08
EP0459771A3 (en) 1992-02-05
JPH04226075A (ja) 1992-08-14
EP0459771B1 (en) 1997-08-27
DE69127402D1 (de) 1997-10-02
MY107475A (en) 1995-12-30
GR3025139T3 (en) 1998-02-27
US5378914A (en) 1995-01-03
DE69127402T2 (de) 1998-01-02
ATE157482T1 (de) 1997-09-15
DK0459771T3 (da) 1997-09-22
CN1052343C (zh) 2000-05-10
JP3067263B2 (ja) 2000-07-17

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