JPS6421947A - Input protective circuit device - Google Patents
Input protective circuit deviceInfo
- Publication number
- JPS6421947A JPS6421947A JP17827387A JP17827387A JPS6421947A JP S6421947 A JPS6421947 A JP S6421947A JP 17827387 A JP17827387 A JP 17827387A JP 17827387 A JP17827387 A JP 17827387A JP S6421947 A JPS6421947 A JP S6421947A
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- contact hole
- layer
- diffusion layer
- circuit device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000001681 protective effect Effects 0.000 title abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 5
- 238000009792 diffusion process Methods 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain the input protective circuit device generating no local current concentration at the connected part between a diffusion layer and the wiring of an input terminal and maintaining stability against electrostatic breakdown by a method wherein the diffusion layer formed on a substrate or in a well and the metal wiring coming from an input terminal are connected using two polycrystalline silicon layers and three contact holes. CONSTITUTION:In the input protective circuit device of a semiconductor integrated circuit, the diffusion layer 1 formed on a substrate or a well and the first polycrystalline silicon layer 3, with which the gate of the transistor on an internal circuit, are connected through the first contact hole 2. Also, the abovementioned first polycrystalline silicon layer 3 and one end of the second polycrystalline layer 5, to be formed in belt-like shape crossing on the first polycrystalline silicon layer 3, are connected through the second contact hole 4. Besides, the wiring 7 coming from an input terminal and the other end of the above-mentioned polycrystalline silicon layer 5 are connected through the third contact hole 6. The first contact hole 2 is included in the abovementioned diffusion layer 1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62178273A JPH0666417B2 (en) | 1987-07-16 | 1987-07-16 | Input protection circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62178273A JPH0666417B2 (en) | 1987-07-16 | 1987-07-16 | Input protection circuit device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6421947A true JPS6421947A (en) | 1989-01-25 |
JPH0666417B2 JPH0666417B2 (en) | 1994-08-24 |
Family
ID=16045590
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62178273A Expired - Lifetime JPH0666417B2 (en) | 1987-07-16 | 1987-07-16 | Input protection circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0666417B2 (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5643749A (en) * | 1979-09-18 | 1981-04-22 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and its manufacture |
-
1987
- 1987-07-16 JP JP62178273A patent/JPH0666417B2/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5643749A (en) * | 1979-09-18 | 1981-04-22 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and its manufacture |
Also Published As
Publication number | Publication date |
---|---|
JPH0666417B2 (en) | 1994-08-24 |
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