JPS6421947A - Input protective circuit device - Google Patents

Input protective circuit device

Info

Publication number
JPS6421947A
JPS6421947A JP17827387A JP17827387A JPS6421947A JP S6421947 A JPS6421947 A JP S6421947A JP 17827387 A JP17827387 A JP 17827387A JP 17827387 A JP17827387 A JP 17827387A JP S6421947 A JPS6421947 A JP S6421947A
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
contact hole
layer
diffusion layer
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17827387A
Other languages
Japanese (ja)
Other versions
JPH0666417B2 (en
Inventor
Hiroshi Furuta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62178273A priority Critical patent/JPH0666417B2/en
Publication of JPS6421947A publication Critical patent/JPS6421947A/en
Publication of JPH0666417B2 publication Critical patent/JPH0666417B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain the input protective circuit device generating no local current concentration at the connected part between a diffusion layer and the wiring of an input terminal and maintaining stability against electrostatic breakdown by a method wherein the diffusion layer formed on a substrate or in a well and the metal wiring coming from an input terminal are connected using two polycrystalline silicon layers and three contact holes. CONSTITUTION:In the input protective circuit device of a semiconductor integrated circuit, the diffusion layer 1 formed on a substrate or a well and the first polycrystalline silicon layer 3, with which the gate of the transistor on an internal circuit, are connected through the first contact hole 2. Also, the abovementioned first polycrystalline silicon layer 3 and one end of the second polycrystalline layer 5, to be formed in belt-like shape crossing on the first polycrystalline silicon layer 3, are connected through the second contact hole 4. Besides, the wiring 7 coming from an input terminal and the other end of the above-mentioned polycrystalline silicon layer 5 are connected through the third contact hole 6. The first contact hole 2 is included in the abovementioned diffusion layer 1.
JP62178273A 1987-07-16 1987-07-16 Input protection circuit device Expired - Lifetime JPH0666417B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62178273A JPH0666417B2 (en) 1987-07-16 1987-07-16 Input protection circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62178273A JPH0666417B2 (en) 1987-07-16 1987-07-16 Input protection circuit device

Publications (2)

Publication Number Publication Date
JPS6421947A true JPS6421947A (en) 1989-01-25
JPH0666417B2 JPH0666417B2 (en) 1994-08-24

Family

ID=16045590

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62178273A Expired - Lifetime JPH0666417B2 (en) 1987-07-16 1987-07-16 Input protection circuit device

Country Status (1)

Country Link
JP (1) JPH0666417B2 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5643749A (en) * 1979-09-18 1981-04-22 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its manufacture

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5643749A (en) * 1979-09-18 1981-04-22 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its manufacture

Also Published As

Publication number Publication date
JPH0666417B2 (en) 1994-08-24

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