KR960019713A - 반도체집적회로 및 반도체장치 - Google Patents

반도체집적회로 및 반도체장치 Download PDF

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Publication number
KR960019713A
KR960019713A KR1019950040921A KR19950040921A KR960019713A KR 960019713 A KR960019713 A KR 960019713A KR 1019950040921 A KR1019950040921 A KR 1019950040921A KR 19950040921 A KR19950040921 A KR 19950040921A KR 960019713 A KR960019713 A KR 960019713A
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South Korea
Prior art keywords
layer
capacitor
semiconductor
mis
semiconductor device
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KR1019950040921A
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English (en)
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마모루 시노하라
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이데이 노부유키
소니 가부시기가이샤
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Publication of KR960019713A publication Critical patent/KR960019713A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
    • H01L29/66189—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors with PN junction, e.g. hybrid capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

본 발명은 MIS(metal-insulator silicon) 용량을 구비한 반도체 집적회로에 관한 것으로서, 기판단자와 MIS 용량과의 사이에 제1용량과 제2용량과를 직렬로 접속하고, 제1용량과 제2용량과의 사이에 전원을 접속하고, 이 전원에 의하여 제1용량과 제2용량과의 사이의 전위를 임의의 전위로 제어하여, 기판에 전달되어 온 디지탈 신호가 MIS용량에 접속된 외부회로에 들어가지 않도록 한다.

Description

반도체집적회로 및 반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명 반도체집적회로의 일예를 나타낸 회로도,
제2도는 본 발명 반도체장치의 요부단면도.

Claims (8)

  1. 기판단자와, 상기 기판단자에 접속된 제1용량과, 상기 제1용량에 직렬로 접속된 제2용량과, 상기 제2용량에 직렬로 접속된 MIS용량과, 상기 제1용량과 상기 제2용량과의 사이에 접속된 접속단자와, 상기 접속단자를 임의의 전위로 제어하기 위한 기준전위발생원으로 이루어지는 것을 특징으로 하는 반도체집적회로.
  2. 반도체기체(基體)상에 이 반도체기체와는 전기적으로 분리된 상태로 형성된 제1층과, 상기 제1층상에 형성된 절연재료로 이루어지는 제2층과, 상기 제2층상에 소정의 패턴으로 형성된 하부전극, 이 하부전극을 덮은 상태로 상기 제2층상에 형성된 절연막, 이 절연악상에 형성된 상부전극으로 이루어지는 MIS용량과, 상기 제1층에 전기적으로 접속되고, 또한 상기 제1층을 임의의 전위로 제어하기 위한 기준전위발생원에 접속되는 전위 제어전극을 구비하고 있는 것을 특징으로 하는 반도체장치.
  3. 제2항에 있어서, 상기 MIS용량이 형성된 반도체기체상에 게이트전극을 가지는 MOS트랜지스터가 형성되고, 상기 MOS트랜지스터의 게이트전극 및 상기 MIS용량의 하부전극은 동일한 제조공정에 의하여 형성되는 것을 특징으로 하는 반도체장치.
  4. 제2항에 있어서, 상기 제1층은 상기 반도체기체의 도전형과는 반대의 도전형의 반도체층으로 이루어지는 것을 특징으로 하는 반도체장치.
  5. 제4항에 있어서, 상기 반도체기체의 도전형과는 반대의 도전형의 웰을 가지는 MOS트랜지스터가 상기 MIS용량이 형성되는 반도체기체상에 형성되고, 상기 웰 및 상기 제1층은 동일한 제조공정에 의하여 형성되는 것을 특징으로 하는 반도체장치.
  6. 제4항에 있어서, 소자분리막을 가지는 MOS트랜지스터가 상기 MIS용량이 형성되는 반도체기체상에 형성되고, 상기 절연막은 상기 제2층상에 형성되고, 상기 MOS트랜지스터의 소자분리막은 동일한 제조공정에 의하여 형성되는 것을 특징으로 하는 반도체장치.
  7. 제2항에 있어서, 상기 제1층은 단결정 반도체재료로 이루어지는 것을 특징으로 하는 반도체장치.
  8. 제7항에 있어서, 상기 반도체기체 및 상기 제1층은 각각 반도체재료층으로 이루어지고, 상기 반도체재료층은 함게 접합되어 있는 것을 특징으로 하는 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950040921A 1994-11-14 1995-11-13 반도체집적회로 및 반도체장치 KR960019713A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP6278741A JPH08139273A (ja) 1994-11-14 1994-11-14 半導体集積回路および半導体装置
JP1994-278741 1994-11-14

Publications (1)

Publication Number Publication Date
KR960019713A true KR960019713A (ko) 1996-06-17

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Application Number Title Priority Date Filing Date
KR1019950040921A KR960019713A (ko) 1994-11-14 1995-11-13 반도체집적회로 및 반도체장치

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US (1) US6265755B1 (ko)
JP (1) JPH08139273A (ko)
KR (1) KR960019713A (ko)
TW (1) TW283264B (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3199004B2 (ja) * 1997-11-10 2001-08-13 日本電気株式会社 半導体装置およびその製造方法
JP3602745B2 (ja) * 1999-06-30 2004-12-15 株式会社東芝 半導体装置
US6528408B2 (en) * 2001-05-21 2003-03-04 Micron Technology, Inc. Method for bumped die and wire bonded board-on-chip package
US6835628B2 (en) * 2001-11-05 2004-12-28 Intersil Americas Inc. Integrated circuit with a MOS capacitor
JP2008199044A (ja) * 2008-03-19 2008-08-28 Seiko Epson Corp 半導体装置およびその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62188353A (ja) * 1986-02-14 1987-08-17 Nec Corp 半導体装置
JPS6329962A (ja) * 1986-07-23 1988-02-08 Sony Corp 半導体装置
JP2623692B2 (ja) * 1988-01-22 1997-06-25 ソニー株式会社 半導体回路装置
JPH04196583A (ja) * 1990-11-28 1992-07-16 Seiko Epson Corp 半導体装置
JP2630874B2 (ja) * 1991-07-29 1997-07-16 三洋電機株式会社 半導体集積回路の製造方法
KR940018967A (ko) * 1993-01-30 1994-08-19 오가 노리오 반도체장치 및 그 제조방법

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JPH08139273A (ja) 1996-05-31
US6265755B1 (en) 2001-07-24
TW283264B (ko) 1996-08-11

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