JPS55103759A - Electrostatic induction transistor integrated circuit - Google Patents

Electrostatic induction transistor integrated circuit

Info

Publication number
JPS55103759A
JPS55103759A JP1246079A JP1246079A JPS55103759A JP S55103759 A JPS55103759 A JP S55103759A JP 1246079 A JP1246079 A JP 1246079A JP 1246079 A JP1246079 A JP 1246079A JP S55103759 A JPS55103759 A JP S55103759A
Authority
JP
Japan
Prior art keywords
region
integrated circuit
electrostatic induction
drain
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1246079A
Other languages
Japanese (ja)
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP1246079A priority Critical patent/JPS55103759A/en
Publication of JPS55103759A publication Critical patent/JPS55103759A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To improve the degree of integration by removing the surface wiring region from the surface with region provided in a buried-in a semiconductor substrate used a common region, in an electrostatic induction transistor integrated circuit.
CONSTITUTION: Source regions 19 and 22 of transistors T4 and T5, and drain region 23 of transistor T6 are connected by means of an n+-type buried-in region as a common region. Transistors T4 and T5 use the n+-type buried-in region as their source, and n+-type regions 17 and 20 as their respective drain, forming reverse operation SITs. Transistor T6 uses the n+-type buried-in region as its drain and n+region 25 as its source, constituting a vertical SIT. Under the reverse operation of the SIT, its current flows concentratively in the channel region sandwiched by gates, so that it is possible to take a large current amplification factor. As a result, the degree of integration can be improved.
COPYRIGHT: (C)1980,JPO&Japio
JP1246079A 1979-02-02 1979-02-02 Electrostatic induction transistor integrated circuit Pending JPS55103759A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1246079A JPS55103759A (en) 1979-02-02 1979-02-02 Electrostatic induction transistor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1246079A JPS55103759A (en) 1979-02-02 1979-02-02 Electrostatic induction transistor integrated circuit

Publications (1)

Publication Number Publication Date
JPS55103759A true JPS55103759A (en) 1980-08-08

Family

ID=11805954

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1246079A Pending JPS55103759A (en) 1979-02-02 1979-02-02 Electrostatic induction transistor integrated circuit

Country Status (1)

Country Link
JP (1) JPS55103759A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS592346A (en) * 1982-06-28 1984-01-07 Semiconductor Res Found Semiconductor integrated circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS592346A (en) * 1982-06-28 1984-01-07 Semiconductor Res Found Semiconductor integrated circuit
JPH0427706B2 (en) * 1982-06-28 1992-05-12 Handotai Kenkyu Shinkokai

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