DE69433993D1 - Photoelektrischer Umwandler, sein Steuerverfahren und System mit diesem photoelektrischen Umwandler - Google Patents
Photoelektrischer Umwandler, sein Steuerverfahren und System mit diesem photoelektrischen UmwandlerInfo
- Publication number
- DE69433993D1 DE69433993D1 DE69433993T DE69433993T DE69433993D1 DE 69433993 D1 DE69433993 D1 DE 69433993D1 DE 69433993 T DE69433993 T DE 69433993T DE 69433993 T DE69433993 T DE 69433993T DE 69433993 D1 DE69433993 D1 DE 69433993D1
- Authority
- DE
- Germany
- Prior art keywords
- photoelectric converter
- control method
- photoelectric
- converter
- control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
- G01T1/2914—Measurement of spatial distribution of radiation
- G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
- G01T1/2928—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14692—Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/30—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from X-rays
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/32—Transforming X-rays
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Toxicology (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Photovoltaic Devices (AREA)
- Measurement Of Radiation (AREA)
Applications Claiming Priority (20)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33169093 | 1993-12-27 | ||
JP33169093 | 1993-12-27 | ||
JP19664194 | 1994-08-22 | ||
JP19664494 | 1994-08-22 | ||
JP19664094 | 1994-08-22 | ||
JP19664294 | 1994-08-22 | ||
JP19667094 | 1994-08-22 | ||
JP19664394 | 1994-08-22 | ||
JP19667094 | 1994-08-22 | ||
JP19664594 | 1994-08-22 | ||
JP19664594 | 1994-08-22 | ||
JP19664894 | 1994-08-22 | ||
JP19664094 | 1994-08-22 | ||
JP19664494 | 1994-08-22 | ||
JP19664894 | 1994-08-22 | ||
JP19664194 | 1994-08-22 | ||
JP19664394 | 1994-08-22 | ||
JP19664294 | 1994-08-22 | ||
JP31339294 | 1994-12-16 | ||
JP6313392A JP3066944B2 (ja) | 1993-12-27 | 1994-12-16 | 光電変換装置、その駆動方法及びそれを有するシステム |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69433993D1 true DE69433993D1 (de) | 2004-10-21 |
DE69433993T2 DE69433993T2 (de) | 2005-09-22 |
Family
ID=27580393
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69433993T Expired - Lifetime DE69433993T2 (de) | 1993-12-27 | 1994-12-27 | Photoelektrischer Umwandler, sein Steuerverfahren und System mit diesem photoelektrischen Umwandler |
Country Status (4)
Country | Link |
---|---|
US (7) | US6075256A (de) |
EP (4) | EP1465259A3 (de) |
JP (1) | JP3066944B2 (de) |
DE (1) | DE69433993T2 (de) |
Families Citing this family (150)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3066944B2 (ja) * | 1993-12-27 | 2000-07-17 | キヤノン株式会社 | 光電変換装置、その駆動方法及びそれを有するシステム |
JP3183390B2 (ja) | 1995-09-05 | 2001-07-09 | キヤノン株式会社 | 光電変換装置及びそれを用いた撮像装置 |
JP4557763B2 (ja) * | 1995-09-05 | 2010-10-06 | キヤノン株式会社 | 光電変換装置及び放射線撮像装置 |
JP4750878B2 (ja) * | 1995-09-05 | 2011-08-17 | キヤノン株式会社 | 光電変換装置及び放射線撮像装置 |
TW331667B (en) * | 1995-09-05 | 1998-05-11 | Canon Kk | Photoelectric converter |
JPH1056180A (ja) | 1995-09-29 | 1998-02-24 | Canon Inc | 半導体装置及びその製造方法 |
JP3618945B2 (ja) | 1996-02-21 | 2005-02-09 | キヤノン株式会社 | 基板の切断方法及び基板切断装置 |
US6690493B1 (en) | 1996-02-22 | 2004-02-10 | Canon Kabushiki Kaisha | Photoelectric conversion device and driving method therefor |
JP3957803B2 (ja) * | 1996-02-22 | 2007-08-15 | キヤノン株式会社 | 光電変換装置 |
JP3897389B2 (ja) * | 1996-02-22 | 2007-03-22 | キヤノン株式会社 | 光電変換装置の駆動方法及び光電変換装置 |
JP3880094B2 (ja) * | 1996-02-22 | 2007-02-14 | キヤノン株式会社 | 放射線検出装置及びその製造方法 |
JP3893181B2 (ja) * | 1996-02-26 | 2007-03-14 | キヤノン株式会社 | 放射線撮像装置及び該装置の駆動方法 |
US6448561B1 (en) | 1996-02-26 | 2002-09-10 | Canon Kabushiki Kaisha | Photoelectric conversion apparatus and driving method of the apparatus |
US6127684A (en) * | 1996-02-26 | 2000-10-03 | Canon Kabushiki Kaisha | Photoelectric conversion apparatus and driving method of the apparatus |
EP0792066B1 (de) * | 1996-02-26 | 2004-11-03 | Canon Kabushiki Kaisha | Photoelektrische Umwandlungsvorrichtung und Ansteuermethode dafür |
JP4654321B2 (ja) * | 1996-03-13 | 2011-03-16 | キヤノン株式会社 | 光電変換装置、x線撮像装置、及び該装置を有するシステム |
JP4597171B2 (ja) * | 1996-03-13 | 2010-12-15 | キヤノン株式会社 | 光電変換装置、x線撮像装置、及び該装置を有するシステム |
JP3984676B2 (ja) * | 1996-03-26 | 2007-10-03 | キヤノン株式会社 | 光電変換装置、及び該装置を有するシステム |
JP4100739B2 (ja) * | 1996-10-24 | 2008-06-11 | キヤノン株式会社 | 光電変換装置 |
JP3416432B2 (ja) * | 1996-12-24 | 2003-06-16 | キヤノン株式会社 | 光電変換装置及びその駆動方法 |
JP3667058B2 (ja) | 1997-11-19 | 2005-07-06 | キヤノン株式会社 | 光電変換装置 |
JPH11307756A (ja) | 1998-02-20 | 1999-11-05 | Canon Inc | 光電変換装置および放射線読取装置 |
JPH11331703A (ja) * | 1998-03-20 | 1999-11-30 | Toshiba Corp | 撮像装置 |
JP4011734B2 (ja) | 1998-06-02 | 2007-11-21 | キヤノン株式会社 | 2次元光センサ、それを用いた放射線検出装置及び放射線診断システム |
US6420691B1 (en) * | 1998-07-08 | 2002-07-16 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Charge-coupled device for low background observations |
JP4311693B2 (ja) * | 1998-07-30 | 2009-08-12 | キヤノン株式会社 | 光電変換装置及びそのリペア方法、それを用いたx線撮像システム |
JP3604968B2 (ja) | 1998-08-31 | 2004-12-22 | キヤノン株式会社 | 放射線撮影装置 |
JP2000131444A (ja) | 1998-10-28 | 2000-05-12 | Canon Inc | 放射線検出装置、放射線検出システム、及び放射線検出装置の製造方法 |
US6414318B1 (en) * | 1998-11-06 | 2002-07-02 | Bridge Semiconductor Corporation | Electronic circuit |
US6353324B1 (en) * | 1998-11-06 | 2002-03-05 | Bridge Semiconductor Corporation | Electronic circuit |
EP1032049B1 (de) * | 1999-02-25 | 2011-07-13 | Canon Kabushiki Kaisha | Photoelektrisches Umwandlungselement |
US6833873B1 (en) | 1999-06-30 | 2004-12-21 | Canon Kabushiki Kaisha | Image pickup apparatus |
US6885404B1 (en) | 1999-06-30 | 2005-04-26 | Canon Kabushiki Kaisha | Image pickup apparatus |
US6859229B1 (en) | 1999-06-30 | 2005-02-22 | Canon Kabushiki Kaisha | Image pickup apparatus |
US6882368B1 (en) | 1999-06-30 | 2005-04-19 | Canon Kabushiki Kaisha | Image pickup apparatus |
US6980248B1 (en) | 1999-06-30 | 2005-12-27 | Canon Kabushiki Kaisha | Image pickup apparatus |
EP1073267B1 (de) * | 1999-07-30 | 2010-12-22 | Canon Kabushiki Kaisha | Strahlungsbildaufnahmeapparatus |
JP2001074845A (ja) | 1999-09-03 | 2001-03-23 | Canon Inc | 半導体装置及びそれを用いた放射線撮像システム |
US6450684B2 (en) | 1999-12-24 | 2002-09-17 | Canon Kabushiki Kaisha | Radiographic apparatus, radiographic table and radiographic system |
JP4508335B2 (ja) * | 2000-02-01 | 2010-07-21 | キヤノン株式会社 | 放射線撮影装置 |
US6928145B2 (en) | 2000-02-01 | 2005-08-09 | Canon Kabushiki Kaisha | Radiographic apparatus |
US6855935B2 (en) | 2000-03-31 | 2005-02-15 | Canon Kabushiki Kaisha | Electromagnetic wave detector |
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US6800836B2 (en) | 2000-07-10 | 2004-10-05 | Canon Kabushiki Kaisha | Image pickup device, radiation image pickup device and image processing system |
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JP2002148342A (ja) * | 2000-11-07 | 2002-05-22 | Canon Inc | 放射線撮像装置 |
US20020060322A1 (en) * | 2000-11-20 | 2002-05-23 | Hiroshi Tanabe | Thin film transistor having high mobility and high on-current and method for manufacturing the same |
JP3588053B2 (ja) * | 2001-02-07 | 2004-11-10 | シャープ株式会社 | 電磁波検出器 |
JP3610348B2 (ja) | 2001-08-27 | 2005-01-12 | キヤノン株式会社 | カセッテ型撮像装置及び放射線撮影装置 |
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US7034309B2 (en) * | 2001-11-13 | 2006-04-25 | Canon Kabushiki Kaisha | Radiation detecting apparatus and method of driving the same |
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US6559506B1 (en) * | 2002-04-03 | 2003-05-06 | General Electric Company | Imaging array and methods for fabricating same |
US7214945B2 (en) * | 2002-06-11 | 2007-05-08 | Canon Kabushiki Kaisha | Radiation detecting apparatus, manufacturing method therefor, and radiation image pickup system |
EP1388740B1 (de) * | 2002-08-09 | 2014-11-05 | Canon Kabushiki Kaisha | Vorrichtung und Verfahren zur Strahlungsabbildung |
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JP4217505B2 (ja) * | 2003-02-28 | 2009-02-04 | キヤノン株式会社 | 撮像装置及びx線撮像装置 |
JP5140235B2 (ja) * | 2003-03-19 | 2013-02-06 | 富士通セミコンダクター株式会社 | 半導体装置 |
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JP4469638B2 (ja) | 2004-03-12 | 2010-05-26 | キヤノン株式会社 | 読み出し装置及び画像撮影装置 |
JP4307322B2 (ja) * | 2004-05-18 | 2009-08-05 | キヤノン株式会社 | 放射線撮像装置及び放射線撮像システム |
JP4845352B2 (ja) * | 2004-06-15 | 2011-12-28 | キヤノン株式会社 | 放射線撮像装置、その製造方法及び放射線撮像システム |
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US8067813B2 (en) * | 2004-07-01 | 2011-11-29 | Varian Medical Systems Technologies, Inc. | Integrated MIS photosensitive device using continuous films |
JP4964771B2 (ja) | 2004-07-20 | 2012-07-04 | メドトロニック,インコーポレイテッド | 脳脊髄液排液装置 |
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US7022997B2 (en) | 2006-04-04 |
US6982422B2 (en) | 2006-01-03 |
USRE42157E1 (en) | 2011-02-22 |
US20010050402A1 (en) | 2001-12-13 |
EP0660421B1 (de) | 2004-09-15 |
JPH08116044A (ja) | 1996-05-07 |
DE69433993T2 (de) | 2005-09-22 |
US20020167061A1 (en) | 2002-11-14 |
EP1465259A2 (de) | 2004-10-06 |
EP2287911A3 (de) | 2011-05-04 |
US20060027758A1 (en) | 2006-02-09 |
USRE39780E1 (en) | 2007-08-21 |
US20040159901A1 (en) | 2004-08-19 |
US6075256A (en) | 2000-06-13 |
EP0660421B9 (de) | 2005-07-20 |
JP3066944B2 (ja) | 2000-07-17 |
EP2287911A2 (de) | 2011-02-23 |
EP1453101A3 (de) | 2010-03-03 |
US6512279B2 (en) | 2003-01-28 |
EP1453101A2 (de) | 2004-09-01 |
EP1465259A3 (de) | 2010-03-03 |
EP0660421A3 (de) | 1997-11-05 |
EP0660421A2 (de) | 1995-06-28 |
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