DE68929486D1 - Integrierte Halbleiterschaltungsanordnung mit Leiterschichten - Google Patents
Integrierte Halbleiterschaltungsanordnung mit LeiterschichtenInfo
- Publication number
- DE68929486D1 DE68929486D1 DE68929486T DE68929486T DE68929486D1 DE 68929486 D1 DE68929486 D1 DE 68929486D1 DE 68929486 T DE68929486 T DE 68929486T DE 68929486 T DE68929486 T DE 68929486T DE 68929486 D1 DE68929486 D1 DE 68929486D1
- Authority
- DE
- Germany
- Prior art keywords
- circuit arrangement
- semiconductor circuit
- conductor layers
- integrated semiconductor
- integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004020 conductor Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
- H01L23/5286—Arrangements of power or ground buses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5225—Shielding layers formed together with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63141769A JPH021928A (ja) | 1988-06-10 | 1988-06-10 | 半導体集積回路 |
JP14176988 | 1988-06-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68929486D1 true DE68929486D1 (de) | 2003-11-13 |
DE68929486T2 DE68929486T2 (de) | 2004-07-22 |
Family
ID=15299748
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68929486T Expired - Fee Related DE68929486T2 (de) | 1988-06-10 | 1989-06-09 | Integrierte Halbleiterschaltungsanordnung mit Leiterschichten |
Country Status (5)
Country | Link |
---|---|
US (1) | US4958222A (de) |
EP (1) | EP0353426B1 (de) |
JP (1) | JPH021928A (de) |
KR (1) | KR920004179B1 (de) |
DE (1) | DE68929486T2 (de) |
Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0828467B2 (ja) * | 1988-11-15 | 1996-03-21 | 株式会社東芝 | 半導体装置 |
JP2580301B2 (ja) * | 1988-12-27 | 1997-02-12 | 株式会社日立製作所 | 半導体集積回路装置 |
US5192716A (en) * | 1989-01-25 | 1993-03-09 | Polylithics, Inc. | Method of making a extended integration semiconductor structure |
US5055907A (en) * | 1989-01-25 | 1991-10-08 | Mosaic, Inc. | Extended integration semiconductor structure with wiring layers |
JP2507618B2 (ja) * | 1989-07-21 | 1996-06-12 | 株式会社東芝 | 半導体集積回路装置の製造方法 |
JP2598328B2 (ja) * | 1989-10-17 | 1997-04-09 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JPH03165058A (ja) * | 1989-11-24 | 1991-07-17 | Mitsubishi Electric Corp | 半導体装置 |
US5256590A (en) * | 1989-11-24 | 1993-10-26 | Mitsubishi Denki Kabushiki Kaisha | Method of making a shielded semiconductor device |
US5182625A (en) * | 1990-04-26 | 1993-01-26 | Fuji Xerox Co., Ltd. | Image sensor and method of manufacturing the same |
JPH0410624A (ja) * | 1990-04-27 | 1992-01-14 | Hitachi Ltd | 半導体集積回路 |
JP2746730B2 (ja) * | 1990-05-17 | 1998-05-06 | 富士通株式会社 | 半導体記憶装置 |
DE69125210T2 (de) * | 1990-05-31 | 1997-08-07 | Canon Kk | Verfahren zur Herstellung einer Halbleitervorrichtung mit einer Verdrahtungsstruktur hoher Dichte |
JPH0750710B2 (ja) * | 1990-06-06 | 1995-05-31 | 富士ゼロックス株式会社 | 多層配線構造 |
US5122859A (en) * | 1990-06-29 | 1992-06-16 | Texas Instruments Incorporated | Iterative self-aligned contact metallization process |
EP0480580A3 (en) * | 1990-09-10 | 1992-09-02 | Canon Kabushiki Kaisha | Electrode structure of semiconductor device and method for manufacturing the same |
JPH04267586A (ja) * | 1991-02-22 | 1992-09-24 | Nec Corp | 同軸配線パターンおよびその形成方法 |
US5151769A (en) * | 1991-04-04 | 1992-09-29 | General Electric Company | Optically patterned RF shield for an integrated circuit chip for analog and/or digital operation at microwave frequencies |
JPH05136125A (ja) * | 1991-11-14 | 1993-06-01 | Hitachi Ltd | クロツク配線及びクロツク配線を有する半導体集積回路装置 |
KR940008132B1 (ko) * | 1991-11-28 | 1994-09-03 | 삼성전자 주식회사 | 신호선간의 잡음을 억제하는 메모리 소자 |
US5196920A (en) * | 1992-04-21 | 1993-03-23 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor integrated circuit device for limiting capacitive coupling between adjacent circuit blocks |
JP2876963B2 (ja) * | 1993-12-15 | 1999-03-31 | 日本電気株式会社 | 半導体装置 |
JP3283984B2 (ja) * | 1993-12-28 | 2002-05-20 | 株式会社東芝 | 半導体集積回路装置 |
US5689134A (en) * | 1995-01-09 | 1997-11-18 | Lsi Logic Corporation | Integrated circuit structure having reduced cross-talk and method of making same |
KR20000064650A (ko) * | 1996-03-22 | 2000-11-06 | 에를링 블로메, 타게 뢰브그렌 | 반전도성기판의표면에배열된반도체부품과그제조방법및반도체구조안에차폐된전기신호전도체및그제조방법 |
KR100243265B1 (ko) * | 1996-10-16 | 2000-03-02 | 윤종용 | 클럭 라인을 구비하는 반도체 칩 |
JP3681865B2 (ja) | 1997-03-31 | 2005-08-10 | 三菱電機株式会社 | 光パルス位置検出回路及び光パルス位置検出方法 |
KR19980084130A (ko) * | 1997-05-21 | 1998-12-05 | 윤종용 | 전자파 차폐증을 가진 반도체장치 및 그 제조방법 |
JP3501620B2 (ja) * | 1997-05-26 | 2004-03-02 | 株式会社 沖マイクロデザイン | 半導体集積回路 |
US6828230B2 (en) | 1997-09-12 | 2004-12-07 | Micron Technology, Inc. | Integrated circuit having conductive paths of different heights formed from the same layer structure and method for forming the same |
KR100308871B1 (ko) * | 1998-12-28 | 2001-11-03 | 윤덕용 | 동축 구조의 신호선 및 그의 제조 방법 |
JP3219067B2 (ja) * | 1999-01-08 | 2001-10-15 | 日本電気株式会社 | 集積回路 |
US6307252B1 (en) * | 1999-03-05 | 2001-10-23 | Agere Systems Guardian Corp. | On-chip shielding of signals |
KR20010009697A (ko) | 1999-07-13 | 2001-02-05 | 윤종용 | 차폐선을 구비한 반도체 집적회로 |
US7294935B2 (en) * | 2001-01-24 | 2007-11-13 | Hrl Laboratories, Llc | Integrated circuits protected against reverse engineering and method for fabricating the same using an apparent metal contact line terminating on field oxide |
AU2002360464A1 (en) * | 2001-12-03 | 2003-06-17 | Memgen Corporation | Miniature rf and microwave components and methods for fabricating such components |
US7239219B2 (en) * | 2001-12-03 | 2007-07-03 | Microfabrica Inc. | Miniature RF and microwave components and methods for fabricating such components |
US9614266B2 (en) | 2001-12-03 | 2017-04-04 | Microfabrica Inc. | Miniature RF and microwave components and methods for fabricating such components |
FR2839581B1 (fr) * | 2002-05-07 | 2005-07-01 | St Microelectronics Sa | Circuit electronique comprenant un condensateur et au moins un composant semiconducteur, et procede de conception d'un tel circuit |
JP2004040042A (ja) * | 2002-07-08 | 2004-02-05 | Fujitsu Ltd | 半導体記憶装置 |
US6657285B1 (en) * | 2002-07-08 | 2003-12-02 | Alcor Micro, Corp. | Semiconductor anti-interference band for integrated circuit |
US10297421B1 (en) | 2003-05-07 | 2019-05-21 | Microfabrica Inc. | Plasma etching of dielectric sacrificial material from reentrant multi-layer metal structures |
KR100469892B1 (ko) * | 2003-07-14 | 2005-02-02 | (주) 팜텍21 | 농작물의 보존성 향상을 위한 육계나무 수피 추출물 |
JP4867157B2 (ja) * | 2004-11-18 | 2012-02-01 | ソニー株式会社 | 高周波トランジスタの設計方法、および、マルチフィンガーゲートを有する高周波トランジスタ |
US7576382B2 (en) | 2005-02-02 | 2009-08-18 | Ricoh Company, Ltd. | Semiconductor integrated device and method of providing shield interconnection therein |
US8853832B2 (en) * | 2009-01-22 | 2014-10-07 | Stmicroelectronics Inc. | Methods and apparatus for reducing coupling in a MOS device |
JP2012164882A (ja) * | 2011-02-08 | 2012-08-30 | Toshiba Corp | 半導体装置 |
JP5364743B2 (ja) * | 2011-03-01 | 2013-12-11 | 株式会社東芝 | 半導体装置 |
CN102903698B (zh) * | 2012-10-25 | 2017-02-08 | 上海华虹宏力半导体制造有限公司 | 半导体器件及集成电路 |
KR102322765B1 (ko) * | 2015-06-22 | 2021-11-08 | 삼성디스플레이 주식회사 | 표시 장치 |
LV15796A (lv) | 2022-06-16 | 2023-12-20 | Jifteco, Sia | Dzīvnieku repelents |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3533023A (en) * | 1967-09-19 | 1970-10-06 | Motorola Inc | Multilayered circuitry interconnections with integral shields |
US3573571A (en) * | 1967-10-13 | 1971-04-06 | Gen Electric | Surface-diffused transistor with isolated field plate |
US3518506A (en) * | 1967-12-06 | 1970-06-30 | Ibm | Semiconductor device with contact metallurgy thereon,and method for making same |
JPS4940889A (de) * | 1972-08-25 | 1974-04-17 | ||
GB1468346A (en) * | 1973-02-28 | 1977-03-23 | Mullard Ltd | Devices having conductive tracks at different levels with interconnections therebetween |
JPS5255881A (en) * | 1975-11-04 | 1977-05-07 | Matsushita Electronics Corp | Semiconductor integrated circuit |
JPS54157092A (en) * | 1978-05-31 | 1979-12-11 | Nec Corp | Semiconductor integrated circuit device |
JPS5811750B2 (ja) * | 1979-06-04 | 1983-03-04 | 株式会社日立製作所 | 高耐圧抵抗素子 |
JPS56126956A (en) * | 1980-03-11 | 1981-10-05 | Fujitsu Ltd | Semiconductor device |
JPS5727962A (en) * | 1980-07-19 | 1982-02-15 | Tatsurou Okamura | Construction material |
JPS57104243A (en) * | 1980-12-20 | 1982-06-29 | Toshiba Corp | Semiconductor device |
JPS5853845A (ja) * | 1981-09-26 | 1983-03-30 | Fujitsu Ltd | 半導体集積回路装置 |
JPS58190045A (ja) * | 1982-04-30 | 1983-11-05 | Fujitsu Ltd | 半導体装置用パツケ−ジ |
JPS5994849A (ja) * | 1982-11-24 | 1984-05-31 | Nec Corp | 半導体集積回路装置 |
US4514749A (en) * | 1983-01-18 | 1985-04-30 | At&T Bell Laboratories | VLSI Chip with ground shielding |
US4580156A (en) * | 1983-12-30 | 1986-04-01 | At&T Bell Laboratories | Structured resistive field shields for low-leakage high voltage devices |
JPS6198477A (ja) * | 1984-10-19 | 1986-05-16 | Nec Corp | Cadによる配線設計システム |
JPS61230340A (ja) * | 1985-04-05 | 1986-10-14 | Nec Ic Microcomput Syst Ltd | 半導体集積回路装置 |
JPH0669040B2 (ja) * | 1985-05-13 | 1994-08-31 | 株式会社東芝 | 光半導体装置 |
DE3641299A1 (de) * | 1986-12-03 | 1988-06-16 | Philips Patentverwaltung | Integrierte halbleiter-schaltung mit mehrlagenverdrahtung |
-
1988
- 1988-06-10 JP JP63141769A patent/JPH021928A/ja active Granted
-
1989
- 1989-06-09 DE DE68929486T patent/DE68929486T2/de not_active Expired - Fee Related
- 1989-06-09 US US07/363,759 patent/US4958222A/en not_active Expired - Lifetime
- 1989-06-09 EP EP89110480A patent/EP0353426B1/de not_active Expired - Lifetime
- 1989-06-10 KR KR1019890008007A patent/KR920004179B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR920004179B1 (ko) | 1992-05-30 |
US4958222A (en) | 1990-09-18 |
DE68929486T2 (de) | 2004-07-22 |
EP0353426B1 (de) | 2003-10-08 |
EP0353426A3 (de) | 1991-07-31 |
EP0353426A2 (de) | 1990-02-07 |
JPH021928A (ja) | 1990-01-08 |
JPH0570302B2 (de) | 1993-10-04 |
KR900001002A (ko) | 1990-01-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |