DE60308161D1 - Lithographischer Apparat und Verfahren zur Herstellung eines Artikels - Google Patents
Lithographischer Apparat und Verfahren zur Herstellung eines ArtikelsInfo
- Publication number
- DE60308161D1 DE60308161D1 DE60308161T DE60308161T DE60308161D1 DE 60308161 D1 DE60308161 D1 DE 60308161D1 DE 60308161 T DE60308161 T DE 60308161T DE 60308161 T DE60308161 T DE 60308161T DE 60308161 D1 DE60308161 D1 DE 60308161D1
- Authority
- DE
- Germany
- Prior art keywords
- article
- making
- lithographic apparatus
- lithographic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03254116A EP1491956B1 (de) | 2003-06-27 | 2003-06-27 | Lithographischer Apparat und Verfahren zur Herstellung eines Artikels |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60308161D1 true DE60308161D1 (de) | 2006-10-19 |
DE60308161T2 DE60308161T2 (de) | 2007-08-09 |
Family
ID=33396023
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60308161T Expired - Lifetime DE60308161T2 (de) | 2003-06-27 | 2003-06-27 | Lithographischer Apparat und Verfahren zur Herstellung eines Artikels |
Country Status (6)
Country | Link |
---|---|
US (2) | US7012673B2 (de) |
EP (1) | EP1491956B1 (de) |
JP (3) | JP4497551B2 (de) |
DE (1) | DE60308161T2 (de) |
TW (1) | TWI252380B (de) |
WO (1) | WO2005001572A2 (de) |
Families Citing this family (82)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10332112A1 (de) * | 2003-07-09 | 2005-01-27 | Carl Zeiss Smt Ag | Projektionsbelichtungsverfahren und Projektionsbelichtungssystem |
US10503084B2 (en) | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US9482966B2 (en) | 2002-11-12 | 2016-11-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR100588124B1 (ko) * | 2002-11-12 | 2006-06-09 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피장치 및 디바이스제조방법 |
AU2003289271A1 (en) * | 2002-12-10 | 2004-06-30 | Nikon Corporation | Exposure apparatus, exposure method and method for manufacturing device |
DE10261775A1 (de) | 2002-12-20 | 2004-07-01 | Carl Zeiss Smt Ag | Vorrichtung zur optischen Vermessung eines Abbildungssystems |
TW200500813A (en) * | 2003-02-26 | 2005-01-01 | Nikon Corp | Exposure apparatus and method, and method of producing device |
JP4902201B2 (ja) | 2003-04-07 | 2012-03-21 | 株式会社ニコン | 露光装置、露光方法及びデバイス製造方法 |
KR101225884B1 (ko) * | 2003-04-11 | 2013-01-28 | 가부시키가이샤 니콘 | 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법 |
US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR101940892B1 (ko) | 2003-06-13 | 2019-01-21 | 가부시키가이샤 니콘 | 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법 |
US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
KR101289979B1 (ko) | 2003-06-19 | 2013-07-26 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조방법 |
US6809794B1 (en) * | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
US7236232B2 (en) * | 2003-07-01 | 2007-06-26 | Nikon Corporation | Using isotopically specified fluids as optical elements |
CN102944981A (zh) | 2003-07-09 | 2013-02-27 | 株式会社尼康 | 曝光装置、器件制造方法 |
EP2264532B1 (de) | 2003-07-09 | 2012-10-31 | Nikon Corporation | Belichtungsapparat und Verfahren zur Herstellung einer Vorrichtung |
WO2005006418A1 (ja) | 2003-07-09 | 2005-01-20 | Nikon Corporation | 露光装置及びデバイス製造方法 |
EP1650787A4 (de) * | 2003-07-25 | 2007-09-19 | Nikon Corp | Untersuchungsverfahren und untersuchungseinrichtung für ein optisches projektionssystem und herstellungsverfahren für ein optisches projektionssystem |
US7326522B2 (en) | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
EP1503244A1 (de) * | 2003-07-28 | 2005-02-02 | ASML Netherlands B.V. | Lithographischer Projektionsapparat und Verfahren zur Herstellung einer Vorrichtung |
EP2264534B1 (de) | 2003-07-28 | 2013-07-17 | Nikon Corporation | Belichtungsapparat, Verfahren zur Herstellung einer Vorrichtung, und Verfahren zur Steuerung des Apparats |
US7175968B2 (en) | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
US7779781B2 (en) | 2003-07-31 | 2010-08-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
TWI263859B (en) | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
SG145780A1 (en) | 2003-08-29 | 2008-09-29 | Nikon Corp | Exposure apparatus and device fabricating method |
KR20170070264A (ko) | 2003-09-03 | 2017-06-21 | 가부시키가이샤 니콘 | 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법 |
WO2005029559A1 (ja) * | 2003-09-19 | 2005-03-31 | Nikon Corporation | 露光装置及びデバイス製造方法 |
TW201809911A (zh) * | 2003-09-29 | 2018-03-16 | 尼康股份有限公司 | 曝光裝置及曝光方法、以及元件製造方法 |
WO2005036623A1 (ja) | 2003-10-08 | 2005-04-21 | Zao Nikon Co., Ltd. | 基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造方法 |
JP2005136364A (ja) * | 2003-10-08 | 2005-05-26 | Zao Nikon Co Ltd | 基板搬送装置、露光装置、並びにデバイス製造方法 |
KR101319109B1 (ko) * | 2003-10-08 | 2013-10-17 | 가부시키가이샤 자오 니콘 | 기판 반송 장치 및 기판 반송 방법, 노광 장치 및 노광 방법, 디바이스 제조 방법 |
TWI598934B (zh) | 2003-10-09 | 2017-09-11 | Nippon Kogaku Kk | Exposure apparatus, exposure method, and device manufacturing method |
JP4295712B2 (ja) | 2003-11-14 | 2009-07-15 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置及び装置製造方法 |
TWI440981B (zh) | 2003-12-03 | 2014-06-11 | 尼康股份有限公司 | Exposure apparatus, exposure method, and device manufacturing method |
KR101111363B1 (ko) * | 2003-12-15 | 2012-04-12 | 가부시키가이샤 니콘 | 투영노광장치 및 스테이지 장치, 그리고 노광방법 |
WO2005059654A1 (en) | 2003-12-15 | 2005-06-30 | Carl Zeiss Smt Ag | Objective as a microlithography projection objective with at least one liquid lens |
KR101941351B1 (ko) | 2003-12-15 | 2019-01-22 | 가부시키가이샤 니콘 | 스테이지 장치, 노광 장치, 및 노광 방법 |
US20070081133A1 (en) * | 2004-12-14 | 2007-04-12 | Niikon Corporation | Projection exposure apparatus and stage unit, and exposure method |
US7324274B2 (en) * | 2003-12-24 | 2008-01-29 | Nikon Corporation | Microscope and immersion objective lens |
US7589822B2 (en) * | 2004-02-02 | 2009-09-15 | Nikon Corporation | Stage drive method and stage unit, exposure apparatus, and device manufacturing method |
EP1713114B1 (de) * | 2004-02-03 | 2018-09-19 | Nikon Corporation | Belichtungsvorrichtung und verfahren zur herstellung einer vorrichtung |
US7050146B2 (en) * | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20070165198A1 (en) * | 2004-02-13 | 2007-07-19 | Carl Zeiss Smt Ag | Projection objective for a microlithographic projection exposure apparatus |
CN100592210C (zh) * | 2004-02-13 | 2010-02-24 | 卡尔蔡司Smt股份公司 | 微平版印刷投影曝光装置的投影物镜 |
JP4677986B2 (ja) * | 2004-04-19 | 2011-04-27 | 株式会社ニコン | ノズル部材、露光方法、露光装置及びデバイス製造方法 |
WO2005111722A2 (en) | 2004-05-04 | 2005-11-24 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
WO2005119368A2 (en) | 2004-06-04 | 2005-12-15 | Carl Zeiss Smt Ag | System for measuring the image quality of an optical imaging system |
KR101199076B1 (ko) * | 2004-06-04 | 2012-11-07 | 칼 짜이스 에스엠티 게엠베하 | 강도 변동이 보상된 투사 시스템 및 이를 위한 보상 요소 |
EP1768169B9 (de) * | 2004-06-04 | 2013-03-06 | Nikon Corporation | Belichtungsvorrichtung, belichtungsverfahren und verfahren zur herstellung eines bauelementes |
US7463330B2 (en) | 2004-07-07 | 2008-12-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4894515B2 (ja) * | 2004-07-12 | 2012-03-14 | 株式会社ニコン | 露光装置、デバイス製造方法、及び液体検出方法 |
US7701550B2 (en) | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20060044533A1 (en) * | 2004-08-27 | 2006-03-02 | Asmlholding N.V. | System and method for reducing disturbances caused by movement in an immersion lithography system |
US7397533B2 (en) * | 2004-12-07 | 2008-07-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
SG124359A1 (en) * | 2005-01-14 | 2006-08-30 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
KR101440617B1 (ko) | 2005-01-31 | 2014-09-15 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
US8692973B2 (en) * | 2005-01-31 | 2014-04-08 | Nikon Corporation | Exposure apparatus and method for producing device |
US7282701B2 (en) * | 2005-02-28 | 2007-10-16 | Asml Netherlands B.V. | Sensor for use in a lithographic apparatus |
JP4262252B2 (ja) * | 2005-03-02 | 2009-05-13 | キヤノン株式会社 | 露光装置 |
USRE43576E1 (en) | 2005-04-08 | 2012-08-14 | Asml Netherlands B.V. | Dual stage lithographic apparatus and device manufacturing method |
US20060232753A1 (en) * | 2005-04-19 | 2006-10-19 | Asml Holding N.V. | Liquid immersion lithography system with tilted liquid flow |
US20070004182A1 (en) * | 2005-06-30 | 2007-01-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and system for inhibiting immersion lithography defect formation |
JP2007012954A (ja) * | 2005-07-01 | 2007-01-18 | Canon Inc | 露光装置 |
US7773195B2 (en) * | 2005-11-29 | 2010-08-10 | Asml Holding N.V. | System and method to increase surface tension and contact angle in immersion lithography |
US20070124987A1 (en) * | 2005-12-05 | 2007-06-07 | Brown Jeffrey K | Electronic pest control apparatus |
US7649611B2 (en) * | 2005-12-30 | 2010-01-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1990828A4 (de) * | 2006-02-16 | 2010-09-15 | Nikon Corp | Belichtungsvorrichtung, belichtungsverfahren und verfahren zur herstellung von bauelementen |
US20070200276A1 (en) * | 2006-02-24 | 2007-08-30 | Micron Technology, Inc. | Method for rapid printing of near-field and imprint lithographic features |
CN100590173C (zh) * | 2006-03-24 | 2010-02-17 | 北京有色金属研究总院 | 一种荧光粉及其制造方法和所制成的电光源 |
US20070238261A1 (en) * | 2006-04-05 | 2007-10-11 | Asml Netherlands B.V. | Device, lithographic apparatus and device manufacturing method |
WO2008008408A2 (en) * | 2006-07-12 | 2008-01-17 | Spectrarep | System and method for managing emergency notifications over a network |
US7973910B2 (en) | 2006-11-17 | 2011-07-05 | Nikon Corporation | Stage apparatus and exposure apparatus |
EP2128703A1 (de) | 2008-05-28 | 2009-12-02 | ASML Netherlands BV | Lithographische Vorrichtung und Betriebsverfahren für die Vorrichtung |
GB2470049B (en) | 2009-05-07 | 2011-03-23 | Zeiss Carl Smt Ag | Optical imaging with reduced immersion liquid evaporation effects |
JP5470007B2 (ja) * | 2009-11-25 | 2014-04-16 | 株式会社日立ハイテクノロジーズ | 測定装置および全反射蛍光測定装置 |
KR20140027298A (ko) | 2011-04-22 | 2014-03-06 | 마퍼 리쏘그라피 아이피 비.브이. | 웨이퍼와 같은 타겟의 처리를 위한 리소그래피 시스템 및 웨이퍼와 같은 타겟의 처리를 위한 리소그래피 시스템 작동 방법 |
WO2012144904A2 (en) | 2011-04-22 | 2012-10-26 | Mapper Lithography Ip B.V. | Position determination in a lithography system using a substrate having a partially reflective position mark |
JP5932023B2 (ja) | 2011-05-13 | 2016-06-08 | マッパー・リソグラフィー・アイピー・ビー.ブイ. | ターゲットの少なくとも一部を処理するためのリソグラフィシステム |
KR101875415B1 (ko) * | 2011-06-30 | 2018-07-06 | 마퍼 리쏘그라피 아이피 비.브이. | 용량성 측정 시스템을 위한 능동 실드 |
JP6384252B2 (ja) * | 2014-10-07 | 2018-09-05 | 株式会社ニコン | パターン露光装置 |
JP6384372B2 (ja) * | 2015-03-20 | 2018-09-05 | 株式会社ニコン | 湿式処理装置 |
Family Cites Families (138)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE242880C (de) | ||||
US3243321A (en) | 1962-11-02 | 1966-03-29 | Atlas Copco Ab | Method of teflon coating of metals |
GB1242527A (en) * | 1967-10-20 | 1971-08-11 | Kodak Ltd | Optical instruments |
US3573975A (en) * | 1968-07-10 | 1971-04-06 | Ibm | Photochemical fabrication process |
ATE1462T1 (de) | 1979-07-27 | 1982-08-15 | Werner W. Dr. Tabarelli | Optisches lithographieverfahren und einrichtung zum kopieren eines musters auf eine halbleiterscheibe. |
FR2474708B1 (fr) | 1980-01-24 | 1987-02-20 | Dme | Procede de microphotolithographie a haute resolution de traits |
JPS5754317A (en) * | 1980-09-19 | 1982-03-31 | Hitachi Ltd | Method and device for forming pattern |
US4346164A (en) * | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
US4509852A (en) * | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
US4390273A (en) * | 1981-02-17 | 1983-06-28 | Censor Patent-Und Versuchsanstalt | Projection mask as well as a method and apparatus for the embedding thereof and projection printing system |
JPS57153433A (en) * | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
US4405701A (en) | 1981-07-29 | 1983-09-20 | Western Electric Co. | Methods of fabricating a photomask |
JPS58202448A (ja) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 露光装置 |
DD206607A1 (de) | 1982-06-16 | 1984-02-01 | Mikroelektronik Zt Forsch Tech | Verfahren und vorrichtung zur beseitigung von interferenzeffekten |
DD242880A1 (de) | 1983-01-31 | 1987-02-11 | Kuch Karl Heinz | Einrichtung zur fotolithografischen strukturuebertragung |
DD221563A1 (de) | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur |
DD224448A1 (de) | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | Einrichtung zur fotolithografischen strukturuebertragung |
JPS6265326A (ja) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | 露光装置 |
JPS62121417A (ja) | 1985-11-22 | 1987-06-02 | Hitachi Ltd | 液浸対物レンズ装置 |
JPS63157419A (ja) | 1986-12-22 | 1988-06-30 | Toshiba Corp | 微細パタ−ン転写装置 |
US5040020A (en) * | 1988-03-31 | 1991-08-13 | Cornell Research Foundation, Inc. | Self-aligned, high resolution resonant dielectric lithography |
JPH03209479A (ja) | 1989-09-06 | 1991-09-12 | Sanee Giken Kk | 露光方法 |
US5121256A (en) * | 1991-03-14 | 1992-06-09 | The Board Of Trustees Of The Leland Stanford Junior University | Lithography system employing a solid immersion lens |
JPH04305915A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH04305917A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JP3203698B2 (ja) | 1991-09-02 | 2001-08-27 | 株式会社ニコン | 顕微鏡の液浸対物レンズ及び防水キャップ |
JPH06124873A (ja) | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
JP2753930B2 (ja) * | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
JP2520833B2 (ja) | 1992-12-21 | 1996-07-31 | 東京エレクトロン株式会社 | 浸漬式の液処理装置 |
JPH06208058A (ja) | 1993-01-13 | 1994-07-26 | Olympus Optical Co Ltd | 顕微鏡対物レンズ |
JP3747951B2 (ja) | 1994-11-07 | 2006-02-22 | 株式会社ニコン | 反射屈折光学系 |
JPH07220990A (ja) | 1994-01-28 | 1995-08-18 | Hitachi Ltd | パターン形成方法及びその露光装置 |
JPH08316124A (ja) * | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
KR100436538B1 (ko) * | 1995-06-07 | 2004-09-16 | 제이콥 엔 올스테드터 | 3차원영상화시스템 |
WO1998009278A1 (en) * | 1996-08-26 | 1998-03-05 | Digital Papyrus Technologies | Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction |
US5825043A (en) * | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
JP3612920B2 (ja) | 1997-02-14 | 2005-01-26 | ソニー株式会社 | 光学記録媒体の原盤作製用露光装置 |
JPH10255319A (ja) * | 1997-03-12 | 1998-09-25 | Hitachi Maxell Ltd | 原盤露光装置及び方法 |
JP3747566B2 (ja) * | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
JP3817836B2 (ja) * | 1997-06-10 | 2006-09-06 | 株式会社ニコン | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
US5900354A (en) * | 1997-07-03 | 1999-05-04 | Batchelder; John Samuel | Method for optical inspection and lithography |
JPH11176727A (ja) | 1997-12-11 | 1999-07-02 | Nikon Corp | 投影露光装置 |
EP1039511A4 (de) | 1997-12-12 | 2005-03-02 | Nikon Corp | Verfahren zur projektionsbelichtung und projektionsausrichteinrichtung |
AU2747999A (en) * | 1998-03-26 | 1999-10-18 | Nikon Corporation | Projection exposure method and system |
JP2000012453A (ja) | 1998-06-18 | 2000-01-14 | Nikon Corp | 露光装置及びその使用方法、露光方法、並びにマスクの製造方法 |
JP2000058436A (ja) | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影露光装置及び露光方法 |
TWI242111B (en) * | 1999-04-19 | 2005-10-21 | Asml Netherlands Bv | Gas bearings for use in vacuum chambers and their application in lithographic projection apparatus |
JP2000347005A (ja) * | 1999-06-02 | 2000-12-15 | Canon Inc | 可変焦点レンズ装置 |
JP4504479B2 (ja) | 1999-09-21 | 2010-07-14 | オリンパス株式会社 | 顕微鏡用液浸対物レンズ |
JP2001272604A (ja) * | 2000-03-27 | 2001-10-05 | Olympus Optical Co Ltd | 液浸対物レンズおよびそれを用いた光学装置 |
JP2002033271A (ja) | 2000-05-12 | 2002-01-31 | Nikon Corp | 投影露光方法、それを用いたデバイス製造方法、及び投影露光装置 |
TW591653B (en) * | 2000-08-08 | 2004-06-11 | Koninkl Philips Electronics Nv | Method of manufacturing an optically scannable information carrier |
KR100866818B1 (ko) * | 2000-12-11 | 2008-11-04 | 가부시키가이샤 니콘 | 투영광학계 및 이 투영광학계를 구비한 노광장치 |
US20020163629A1 (en) * | 2001-05-07 | 2002-11-07 | Michael Switkes | Methods and apparatus employing an index matching medium |
US6545815B2 (en) * | 2001-09-13 | 2003-04-08 | Lucent Technologies Inc. | Tunable liquid microlens with lubrication assisted electrowetting |
US6600547B2 (en) * | 2001-09-24 | 2003-07-29 | Nikon Corporation | Sliding seal |
US6897941B2 (en) * | 2001-11-07 | 2005-05-24 | Applied Materials, Inc. | Optical spot grid array printer |
DE10210899A1 (de) | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
US7092069B2 (en) | 2002-03-08 | 2006-08-15 | Carl Zeiss Smt Ag | Projection exposure method and projection exposure system |
DE10229818A1 (de) * | 2002-06-28 | 2004-01-15 | Carl Zeiss Smt Ag | Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem |
JP4117530B2 (ja) | 2002-04-04 | 2008-07-16 | セイコーエプソン株式会社 | 液量判定装置、露光装置、および液量判定方法 |
JP2004053952A (ja) | 2002-07-19 | 2004-02-19 | Ricoh Co Ltd | 中間転写ベルト |
WO2004019128A2 (en) | 2002-08-23 | 2004-03-04 | Nikon Corporation | Projection optical system and method for photolithography and exposure apparatus and method using same |
US6788477B2 (en) * | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
US7110081B2 (en) | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1429188B1 (de) * | 2002-11-12 | 2013-06-19 | ASML Netherlands B.V. | Lithographischer Projektionsapparat |
DE10253679A1 (de) | 2002-11-18 | 2004-06-03 | Infineon Technologies Ag | Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren |
DE10258718A1 (de) * | 2002-12-09 | 2004-06-24 | Carl Zeiss Smt Ag | Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives |
EP1429190B1 (de) | 2002-12-10 | 2012-05-09 | Canon Kabushiki Kaisha | Belichtungsapparat und -verfahren |
KR20050085236A (ko) | 2002-12-10 | 2005-08-29 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
US7948604B2 (en) | 2002-12-10 | 2011-05-24 | Nikon Corporation | Exposure apparatus and method for producing device |
JP4232449B2 (ja) | 2002-12-10 | 2009-03-04 | 株式会社ニコン | 露光方法、露光装置、及びデバイス製造方法 |
EP1571697A4 (de) | 2002-12-10 | 2007-07-04 | Nikon Corp | Belichtungssystem und bauelementeherstellungsverfahren |
AU2003302831A1 (en) | 2002-12-10 | 2004-06-30 | Nikon Corporation | Exposure method, exposure apparatus and method for manufacturing device |
CN1717776A (zh) | 2002-12-10 | 2006-01-04 | 株式会社尼康 | 光学元件及使用该光学元件的投影曝光装置 |
JP4352874B2 (ja) | 2002-12-10 | 2009-10-28 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
AU2003289271A1 (en) | 2002-12-10 | 2004-06-30 | Nikon Corporation | Exposure apparatus, exposure method and method for manufacturing device |
WO2004053953A1 (ja) | 2002-12-10 | 2004-06-24 | Nikon Corporation | 露光装置及びデバイス製造方法 |
DE10257766A1 (de) | 2002-12-10 | 2004-07-15 | Carl Zeiss Smt Ag | Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage |
AU2003289272A1 (en) | 2002-12-10 | 2004-06-30 | Nikon Corporation | Surface position detection apparatus, exposure method, and device porducing method |
KR101085372B1 (ko) | 2002-12-10 | 2011-11-21 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
KR101157002B1 (ko) | 2002-12-10 | 2012-06-21 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
JP4595320B2 (ja) * | 2002-12-10 | 2010-12-08 | 株式会社ニコン | 露光装置、及びデバイス製造方法 |
WO2004055803A1 (en) | 2002-12-13 | 2004-07-01 | Koninklijke Philips Electronics N.V. | Liquid removal in a method and device for irradiating spots on a layer |
US7010958B2 (en) | 2002-12-19 | 2006-03-14 | Asml Holding N.V. | High-resolution gas gauge proximity sensor |
JP4364805B2 (ja) | 2002-12-19 | 2009-11-18 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 層上にスポットを照射する方法及び装置 |
EP1732075A3 (de) | 2002-12-19 | 2007-02-21 | Koninklijke Philips Electronics N.V. | Verfahren und Vorrichtung zur Punktbestrahlung auf einer Schicht |
DE10261775A1 (de) | 2002-12-20 | 2004-07-01 | Carl Zeiss Smt Ag | Vorrichtung zur optischen Vermessung eines Abbildungssystems |
US6781670B2 (en) | 2002-12-30 | 2004-08-24 | Intel Corporation | Immersion lithography |
TW200500813A (en) | 2003-02-26 | 2005-01-01 | Nikon Corp | Exposure apparatus and method, and method of producing device |
KR101181688B1 (ko) | 2003-03-25 | 2012-09-19 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
JP4902201B2 (ja) | 2003-04-07 | 2012-03-21 | 株式会社ニコン | 露光装置、露光方法及びデバイス製造方法 |
KR101177331B1 (ko) | 2003-04-09 | 2012-08-30 | 가부시키가이샤 니콘 | 액침 리소그래피 유체 제어 시스템 |
JP4650413B2 (ja) | 2003-04-10 | 2011-03-16 | 株式会社ニコン | 液浸リソグフラフィ装置用の移送領域を含む環境システム |
JP4656057B2 (ja) | 2003-04-10 | 2011-03-23 | 株式会社ニコン | 液浸リソグラフィ装置用電気浸透素子 |
EP2921905B1 (de) | 2003-04-10 | 2017-12-27 | Nikon Corporation | Ablaufweg zum sammeln von flüssigkeiten für eine immersionslithografievorrichtung |
SG2012050829A (en) | 2003-04-10 | 2015-07-30 | Nippon Kogaku Kk | Environmental system including vacuum scavange for an immersion lithography apparatus |
SG185136A1 (en) | 2003-04-11 | 2012-11-29 | Nikon Corp | Cleanup method for optics in immersion lithography |
KR101225884B1 (ko) | 2003-04-11 | 2013-01-28 | 가부시키가이샤 니콘 | 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법 |
WO2004092830A2 (en) | 2003-04-11 | 2004-10-28 | Nikon Corporation | Liquid jet and recovery system for immersion lithography |
WO2004095135A2 (en) | 2003-04-17 | 2004-11-04 | Nikon Corporation | Optical arrangement of autofocus elements for use with immersion lithography |
TWI237307B (en) | 2003-05-01 | 2005-08-01 | Nikon Corp | Optical projection system, light exposing apparatus and light exposing method |
KR101516142B1 (ko) | 2003-05-06 | 2015-05-04 | 가부시키가이샤 니콘 | 투영 광학계, 노광 장치 및 노광 방법 |
TWI295414B (en) | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
WO2004102646A1 (ja) | 2003-05-15 | 2004-11-25 | Nikon Corporation | 露光装置及びデバイス製造方法 |
TWI470671B (zh) | 2003-05-23 | 2015-01-21 | 尼康股份有限公司 | Exposure method and exposure apparatus, and device manufacturing method |
JP2005277363A (ja) * | 2003-05-23 | 2005-10-06 | Nikon Corp | 露光装置及びデバイス製造方法 |
TW200509205A (en) | 2003-05-23 | 2005-03-01 | Nippon Kogaku Kk | Exposure method and device-manufacturing method |
TWI282487B (en) | 2003-05-23 | 2007-06-11 | Canon Kk | Projection optical system, exposure apparatus, and device manufacturing method |
US7274472B2 (en) | 2003-05-28 | 2007-09-25 | Timbre Technologies, Inc. | Resolution enhanced optical metrology |
KR101728664B1 (ko) | 2003-05-28 | 2017-05-02 | 가부시키가이샤 니콘 | 노광 방법, 노광 장치, 및 디바이스 제조 방법 |
TWI347741B (en) | 2003-05-30 | 2011-08-21 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
KR101940892B1 (ko) | 2003-06-13 | 2019-01-21 | 가부시키가이샤 니콘 | 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법 |
US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
KR101289979B1 (ko) | 2003-06-19 | 2013-07-26 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조방법 |
EP1498778A1 (de) | 2003-06-27 | 2005-01-19 | ASML Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung |
JP3862678B2 (ja) | 2003-06-27 | 2006-12-27 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US6809794B1 (en) | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
EP1494074A1 (de) | 2003-06-30 | 2005-01-05 | ASML Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung |
EP1975721A1 (de) | 2003-06-30 | 2008-10-01 | ASML Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung eines Artikels |
EP2264532B1 (de) | 2003-07-09 | 2012-10-31 | Nikon Corporation | Belichtungsapparat und Verfahren zur Herstellung einer Vorrichtung |
JP2006528835A (ja) | 2003-07-24 | 2006-12-21 | カール・ツアイス・エスエムテイ・アーゲー | マイクロリソグラフィ投影露光装置および浸漬液体を浸漬空間へ導入する方法 |
US7006209B2 (en) | 2003-07-25 | 2006-02-28 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
EP1503244A1 (de) | 2003-07-28 | 2005-02-02 | ASML Netherlands B.V. | Lithographischer Projektionsapparat und Verfahren zur Herstellung einer Vorrichtung |
US7579135B2 (en) | 2003-08-11 | 2009-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography apparatus for manufacture of integrated circuits |
US7700267B2 (en) | 2003-08-11 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion fluid for immersion lithography, and method of performing immersion lithography |
US7061578B2 (en) | 2003-08-11 | 2006-06-13 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US6844206B1 (en) | 2003-08-21 | 2005-01-18 | Advanced Micro Devices, Llp | Refractive index system monitor and control for immersion lithography |
US7070915B2 (en) | 2003-08-29 | 2006-07-04 | Tokyo Electron Limited | Method and system for drying a substrate |
TWI263859B (en) | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
TWI245163B (en) | 2003-08-29 | 2005-12-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
SG145780A1 (en) | 2003-08-29 | 2008-09-29 | Nikon Corp | Exposure apparatus and device fabricating method |
US7014966B2 (en) | 2003-09-02 | 2006-03-21 | Advanced Micro Devices, Inc. | Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems |
WO2005036623A1 (ja) | 2003-10-08 | 2005-04-21 | Zao Nikon Co., Ltd. | 基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造方法 |
JP4295712B2 (ja) | 2003-11-14 | 2009-07-15 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置及び装置製造方法 |
JP4323946B2 (ja) | 2003-12-19 | 2009-09-02 | キヤノン株式会社 | 露光装置 |
JP2005268700A (ja) * | 2004-03-22 | 2005-09-29 | Nikon Corp | ステージ装置及び露光装置 |
US20050231695A1 (en) | 2004-04-15 | 2005-10-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and system for immersion lithography using high PH immersion fluid |
-
2003
- 2003-06-27 EP EP03254116A patent/EP1491956B1/de not_active Expired - Fee Related
- 2003-06-27 DE DE60308161T patent/DE60308161T2/de not_active Expired - Lifetime
-
2004
- 2004-06-14 US US10/866,077 patent/US7012673B2/en active Active
- 2004-06-17 TW TW093117515A patent/TWI252380B/zh not_active IP Right Cessation
- 2004-06-25 JP JP2006516054A patent/JP4497551B2/ja not_active Expired - Fee Related
- 2004-06-25 WO PCT/EP2004/006875 patent/WO2005001572A2/en active Application Filing
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2008
- 2008-03-11 US US12/073,908 patent/USRE42741E1/en not_active Expired - Fee Related
-
2010
- 2010-03-15 JP JP2010057575A patent/JP5017402B2/ja not_active Expired - Fee Related
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2011
- 2011-12-20 JP JP2011278754A patent/JP2012070000A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP1491956B1 (de) | 2006-09-06 |
JP2012070000A (ja) | 2012-04-05 |
JP5017402B2 (ja) | 2012-09-05 |
EP1491956A1 (de) | 2004-12-29 |
JP2010141357A (ja) | 2010-06-24 |
WO2005001572A3 (en) | 2005-04-21 |
US7012673B2 (en) | 2006-03-14 |
US20050002004A1 (en) | 2005-01-06 |
WO2005001572A2 (en) | 2005-01-06 |
TW200525301A (en) | 2005-08-01 |
TWI252380B (en) | 2006-04-01 |
JP2009514183A (ja) | 2009-04-02 |
USRE42741E1 (en) | 2011-09-27 |
DE60308161T2 (de) | 2007-08-09 |
JP4497551B2 (ja) | 2010-07-07 |
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