DE602004028878D1 - Optische Halbleitervorrichtung und integrierte optische Halbleiterschaltung - Google Patents
Optische Halbleitervorrichtung und integrierte optische HalbleiterschaltungInfo
- Publication number
- DE602004028878D1 DE602004028878D1 DE602004028878T DE602004028878T DE602004028878D1 DE 602004028878 D1 DE602004028878 D1 DE 602004028878D1 DE 602004028878 T DE602004028878 T DE 602004028878T DE 602004028878 T DE602004028878 T DE 602004028878T DE 602004028878 D1 DE602004028878 D1 DE 602004028878D1
- Authority
- DE
- Germany
- Prior art keywords
- integrated circuit
- semiconductor device
- semiconductor integrated
- optical
- optical semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 230000003287 optical effect Effects 0.000 title 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/131—Integrated optical circuits characterised by the manufacturing method by using epitaxial growth
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4202—Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06203—Transistor-type lasers
- H01S5/06206—Controlling the frequency of the radiation, e.g. tunable twin-guide lasers [TTG]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06256—Controlling the frequency of the radiation with DBR-structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0651—Mode control
- H01S5/0653—Mode suppression, e.g. specific multimode
- H01S5/0654—Single longitudinal mode emission
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
- H01S5/101—Curved waveguide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
- H01S5/1017—Waveguide having a void for insertion of materials to change optical properties
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1025—Extended cavities
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
- H01S5/1085—Oblique facets
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
- H01S5/1215—Multiplicity of periods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1221—Detuning between Bragg wavelength and gain maximum
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003094696 | 2003-03-31 | ||
JP2003400156 | 2003-11-28 | ||
JP2003412062 | 2003-12-10 |
Publications (1)
Publication Number | Publication Date |
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DE602004028878D1 true DE602004028878D1 (de) | 2010-10-07 |
Family
ID=33135755
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602004028878T Expired - Lifetime DE602004028878D1 (de) | 2003-03-31 | 2004-03-30 | Optische Halbleitervorrichtung und integrierte optische Halbleiterschaltung |
Country Status (6)
Country | Link |
---|---|
US (3) | US7738520B2 (de) |
EP (3) | EP1813974B1 (de) |
JP (3) | JP4295278B2 (de) |
KR (4) | KR100804371B1 (de) |
DE (1) | DE602004028878D1 (de) |
WO (1) | WO2004088802A1 (de) |
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CN100524980C (zh) * | 2003-03-19 | 2009-08-05 | 宾奥普迪克斯股份有限公司 | 高smsr单向蚀刻激光器和低背反射光子器件 |
JP4608334B2 (ja) * | 2005-02-10 | 2011-01-12 | 日本電信電話株式会社 | 半導体光素子の波長調整方法 |
JP2007072433A (ja) * | 2005-08-11 | 2007-03-22 | Ricoh Co Ltd | 光集積素子及び光制御素子 |
JP4868827B2 (ja) * | 2005-11-08 | 2012-02-01 | 株式会社東芝 | レーザ誘導光配線装置 |
JP2007157888A (ja) * | 2005-12-02 | 2007-06-21 | Nippon Telegr & Teleph Corp <Ntt> | 発振波長温度無依存半導体レーザ |
JP5191143B2 (ja) * | 2006-03-30 | 2013-04-24 | アンリツ株式会社 | 半導体レーザ素子、半導体レーザモジュール、および半導体レーザモジュールを用いたラマン増幅器 |
US7616854B2 (en) * | 2007-05-09 | 2009-11-10 | Alcatel-Lucent Usa Inc. | Optical coupling structure |
JP2009188262A (ja) * | 2008-02-07 | 2009-08-20 | Sumitomo Electric Ind Ltd | 半導体レーザ素子及び半導体光集積素子 |
WO2009113469A1 (ja) * | 2008-03-13 | 2009-09-17 | 日本電気株式会社 | 光デバイス、その製造方法とそれを用いた光集積デバイス |
DE102008029726A1 (de) * | 2008-06-23 | 2009-12-31 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Lichtleiteranordnung und Verfahren zum Herstellen von Lichtleiteranordnungen |
JP5177285B2 (ja) * | 2009-03-30 | 2013-04-03 | 富士通株式会社 | 光素子及びその製造方法 |
JP2011066174A (ja) * | 2009-09-17 | 2011-03-31 | Nippon Telegr & Teleph Corp <Ntt> | 光集積素子 |
JP5477148B2 (ja) * | 2010-04-28 | 2014-04-23 | 日本電気株式会社 | 半導体光配線装置 |
JP5703598B2 (ja) | 2010-06-11 | 2015-04-22 | セイコーエプソン株式会社 | 発光装置、およびプロジェクター |
JP5772466B2 (ja) * | 2011-10-04 | 2015-09-02 | 富士通株式会社 | 光半導体素子、光送信モジュール、光伝送システム及び光半導体素子の製造方法 |
JP5957855B2 (ja) * | 2011-11-21 | 2016-07-27 | 住友電気工業株式会社 | 半導体集積素子 |
JP5957856B2 (ja) * | 2011-11-21 | 2016-07-27 | 住友電気工業株式会社 | 半導体集積素子 |
CN102742099B (zh) | 2011-12-20 | 2013-12-18 | 华为技术有限公司 | 激光器、无源光网络系统、装置以及波长控制方法 |
JP5880065B2 (ja) | 2012-01-18 | 2016-03-08 | 住友電気工業株式会社 | 光集積素子の製造方法 |
JP2013149724A (ja) * | 2012-01-18 | 2013-08-01 | Sumitomo Electric Ind Ltd | 光集積素子の製造方法 |
JP5880063B2 (ja) * | 2012-01-18 | 2016-03-08 | 住友電気工業株式会社 | 光集積素子の製造方法 |
US9645311B2 (en) | 2013-05-21 | 2017-05-09 | International Business Machines Corporation | Optical component with angled-facet waveguide |
US9644966B2 (en) * | 2014-09-11 | 2017-05-09 | Honeywell International Inc. | Integrated optic circuit with waveguides stitched at supplementary angles for reducing coherent backscatter |
JP6527415B2 (ja) * | 2015-07-23 | 2019-06-05 | 日本電信電話株式会社 | 半導体レーザ素子 |
US10809591B2 (en) * | 2016-04-28 | 2020-10-20 | Analog Photonics LLC | Optical phase shifter device |
US10921525B2 (en) * | 2018-11-30 | 2021-02-16 | Mitsubishi Electric Research Laboratories, Inc. | Grating coupler and integrated grating coupler system |
WO2020140286A1 (zh) * | 2019-01-04 | 2020-07-09 | 华为技术有限公司 | 半导体激光器、光发射组件、光线路终端及光网络单元 |
US10923884B2 (en) * | 2019-05-15 | 2021-02-16 | Microsoft Technology Licensing, Llc | Two-section edge-emitting laser |
US11381056B2 (en) * | 2020-02-28 | 2022-07-05 | Silc Technologies, Inc. | Laser cavity construction for reduced wavelengths |
CN112993751B (zh) * | 2021-01-28 | 2022-08-19 | 湖北光安伦芯片有限公司 | 一种纳米柱vcsel光源结构及其制备方法 |
US20220368105A1 (en) * | 2021-05-14 | 2022-11-17 | Microsoft Technology Licensing, Llc | Laser having reduced coherence via phaser shifter |
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-
2004
- 2004-03-30 EP EP07107220.1A patent/EP1813974B1/de not_active Expired - Fee Related
- 2004-03-30 DE DE602004028878T patent/DE602004028878D1/de not_active Expired - Lifetime
- 2004-03-30 KR KR1020067020307A patent/KR100804371B1/ko active IP Right Grant
- 2004-03-30 KR KR1020057004475A patent/KR100681714B1/ko active IP Right Grant
- 2004-03-30 EP EP07107222A patent/EP1813975B1/de not_active Expired - Fee Related
- 2004-03-30 WO PCT/JP2004/004517 patent/WO2004088802A1/ja active Application Filing
- 2004-03-30 KR KR1020077006316A patent/KR100799797B1/ko active IP Right Grant
- 2004-03-30 EP EP04724370.4A patent/EP1610426B1/de not_active Expired - Fee Related
- 2004-03-30 JP JP2005504307A patent/JP4295278B2/ja not_active Expired - Fee Related
- 2004-03-30 US US10/527,355 patent/US7738520B2/en not_active Expired - Lifetime
-
2006
- 2006-09-29 KR KR1020060095288A patent/KR20060107499A/ko not_active Application Discontinuation
-
2007
- 2007-05-30 US US11/755,688 patent/US7471864B2/en not_active Expired - Lifetime
- 2007-05-30 US US11/755,654 patent/US7474817B2/en not_active Expired - Lifetime
-
2008
- 2008-10-21 JP JP2008271385A patent/JP2009016883A/ja active Pending
- 2008-10-21 JP JP2008271384A patent/JP4669540B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR20060107499A (ko) | 2006-10-13 |
EP1610426B1 (de) | 2014-01-08 |
JPWO2004088802A1 (ja) | 2006-07-06 |
EP1610426A4 (de) | 2006-07-26 |
JP2009016883A (ja) | 2009-01-22 |
EP1813975B1 (de) | 2010-08-25 |
US20070223856A1 (en) | 2007-09-27 |
WO2004088802A1 (ja) | 2004-10-14 |
KR100799797B1 (ko) | 2008-02-01 |
KR20070041635A (ko) | 2007-04-18 |
JP4669540B2 (ja) | 2011-04-13 |
US7474817B2 (en) | 2009-01-06 |
KR100804371B1 (ko) | 2008-02-15 |
JP2009020538A (ja) | 2009-01-29 |
EP1813974B1 (de) | 2019-02-27 |
EP1813975A2 (de) | 2007-08-01 |
US7471864B2 (en) | 2008-12-30 |
US7738520B2 (en) | 2010-06-15 |
EP1813975A3 (de) | 2007-10-17 |
US20070223857A1 (en) | 2007-09-27 |
EP1813974A2 (de) | 2007-08-01 |
KR20050040943A (ko) | 2005-05-03 |
KR100681714B1 (ko) | 2007-02-15 |
US20060050752A1 (en) | 2006-03-09 |
KR20060110012A (ko) | 2006-10-23 |
EP1610426A1 (de) | 2005-12-28 |
EP1813974A3 (de) | 2007-10-31 |
JP4295278B2 (ja) | 2009-07-15 |
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