DE602004015853D1 - Hochfrequenz-Schaltkreis und Halbleiter-Bauelement - Google Patents

Hochfrequenz-Schaltkreis und Halbleiter-Bauelement

Info

Publication number
DE602004015853D1
DE602004015853D1 DE602004015853T DE602004015853T DE602004015853D1 DE 602004015853 D1 DE602004015853 D1 DE 602004015853D1 DE 602004015853 T DE602004015853 T DE 602004015853T DE 602004015853 T DE602004015853 T DE 602004015853T DE 602004015853 D1 DE602004015853 D1 DE 602004015853D1
Authority
DE
Germany
Prior art keywords
semiconductor device
frequency circuit
frequency
circuit
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004015853T
Other languages
English (en)
Inventor
Tadayoshi Nakatsuka
Atsushi Suwa
Katsushi Tara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE602004015853D1 publication Critical patent/DE602004015853D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/62—Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
DE602004015853T 2003-06-13 2004-06-11 Hochfrequenz-Schaltkreis und Halbleiter-Bauelement Expired - Lifetime DE602004015853D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003168884A JP2005006143A (ja) 2003-06-13 2003-06-13 高周波スイッチ回路および半導体装置

Publications (1)

Publication Number Publication Date
DE602004015853D1 true DE602004015853D1 (de) 2008-09-25

Family

ID=33410889

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004015853T Expired - Lifetime DE602004015853D1 (de) 2003-06-13 2004-06-11 Hochfrequenz-Schaltkreis und Halbleiter-Bauelement

Country Status (7)

Country Link
US (1) US7173471B2 (de)
EP (3) EP1489744A1 (de)
JP (1) JP2005006143A (de)
KR (1) KR20040107425A (de)
CN (1) CN1307799C (de)
DE (1) DE602004015853D1 (de)
TW (1) TWI294214B (de)

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EP1774620B1 (de) 2004-06-23 2014-10-01 Peregrine Semiconductor Corporation Integriertes hf-front-end
KR20060048619A (ko) * 2004-06-30 2006-05-18 마츠시타 덴끼 산교 가부시키가이샤 고주파 스위치 회로장치
US9653601B2 (en) 2005-07-11 2017-05-16 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US7910993B2 (en) 2005-07-11 2011-03-22 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink
US7890891B2 (en) 2005-07-11 2011-02-15 Peregrine Semiconductor Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
USRE48965E1 (en) 2005-07-11 2022-03-08 Psemi Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US8742502B2 (en) 2005-07-11 2014-06-03 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US20080076371A1 (en) 2005-07-11 2008-03-27 Alexander Dribinsky Circuit and method for controlling charge injection in radio frequency switches
US7915946B2 (en) 2006-05-23 2011-03-29 Nec Corporation Switch circuit for high frequency signals wherein distortion of the signals are suppressed
KR101406401B1 (ko) * 2006-11-10 2014-06-13 스카이워크스 솔루션즈, 인코포레이티드 선형성 성능이 개선된 콤팩트 저손실 고주파수 스위치
US7960772B2 (en) * 2007-04-26 2011-06-14 Peregrine Semiconductor Corporation Tuning capacitance to enhance FET stack voltage withstand
JP5417346B2 (ja) * 2008-02-28 2014-02-12 ペレグリン セミコンダクター コーポレーション 集積回路素子内でキャパシタをデジタル処理で同調するときに用いられる方法及び装置
JP2010220200A (ja) * 2009-02-19 2010-09-30 Renesas Electronics Corp 導通切替回路、導通切替回路ブロック、及び導通切替回路の動作方法
US8723260B1 (en) 2009-03-12 2014-05-13 Rf Micro Devices, Inc. Semiconductor radio frequency switch with body contact
US8058922B2 (en) * 2009-07-28 2011-11-15 Qualcomm, Incorporated Switch with improved biasing
US8395435B2 (en) * 2009-07-30 2013-03-12 Qualcomm, Incorporated Switches with bias resistors for even voltage distribution
JP4960414B2 (ja) * 2009-08-31 2012-06-27 株式会社東芝 半導体スイッチ
US8093940B2 (en) * 2010-04-16 2012-01-10 Sige Semiconductor Inc. System and method of transistor switch biasing in a high power semiconductor switch
US8390395B2 (en) * 2010-05-03 2013-03-05 Raytheon Company High power RF switch with active device size tapering
JP5366914B2 (ja) * 2010-11-25 2013-12-11 パナソニック株式会社 高周波半導体スイッチ回路
JP2012134317A (ja) * 2010-12-21 2012-07-12 Toshiba Corp 半導体装置
US9231578B2 (en) * 2012-01-06 2016-01-05 Richwave Technology Corp. Apparatus and method for obtaining auxiliary voltage from control signals
US9543929B2 (en) 2012-01-06 2017-01-10 Richwave Technology Corp. Apparatus and method for obtaining power voltage from control signals
KR101532125B1 (ko) 2012-11-23 2015-06-26 삼성전기주식회사 고주파 스위치
KR101616597B1 (ko) * 2012-11-26 2016-04-28 삼성전기주식회사 고주파 스위치
US9590674B2 (en) 2012-12-14 2017-03-07 Peregrine Semiconductor Corporation Semiconductor devices with switchable ground-body connection
US20150236748A1 (en) 2013-03-14 2015-08-20 Peregrine Semiconductor Corporation Devices and Methods for Duplexer Loss Reduction
CN103401531B (zh) * 2013-08-14 2016-04-13 锐迪科创微电子（北京）有限公司 多模射频天线开关
US9406695B2 (en) 2013-11-20 2016-08-02 Peregrine Semiconductor Corporation Circuit and method for improving ESD tolerance and switching speed
US9831857B2 (en) 2015-03-11 2017-11-28 Peregrine Semiconductor Corporation Power splitter with programmable output phase shift
US9948281B2 (en) 2016-09-02 2018-04-17 Peregrine Semiconductor Corporation Positive logic digitally tunable capacitor
US10211830B2 (en) 2017-04-28 2019-02-19 Qualcomm Incorporated Shunt termination path
US10910714B2 (en) 2017-09-11 2021-02-02 Qualcomm Incorporated Configurable power combiner and splitter
US10250251B1 (en) * 2018-02-07 2019-04-02 Infineon Technologies Ag RF sensor in stacked transistors
US10886911B2 (en) 2018-03-28 2021-01-05 Psemi Corporation Stacked FET switch bias ladders
US10505530B2 (en) 2018-03-28 2019-12-10 Psemi Corporation Positive logic switch with selectable DC blocking circuit
US10236872B1 (en) 2018-03-28 2019-03-19 Psemi Corporation AC coupling modules for bias ladders
TWI676366B (zh) 2018-08-10 2019-11-01 立積電子股份有限公司 射頻裝置及其電壓產生電路
CN110061621A (zh) * 2019-04-16 2019-07-26 杰华特微电子（杭州）有限公司 一种开关电源控制电路和方法及开关电源
TWI734221B (zh) * 2019-10-16 2021-07-21 立積電子股份有限公司 射頻裝置及其電壓產生裝置
CN115085759A (zh) 2019-10-17 2022-09-20 立积电子股份有限公司 射频装置
US11476849B2 (en) 2020-01-06 2022-10-18 Psemi Corporation High power positive logic switch
TWI819264B (zh) 2020-12-25 2023-10-21 立積電子股份有限公司 射頻裝置及其電壓產生與諧波抑制器

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US5350957A (en) * 1989-10-20 1994-09-27 Texas Instrument Incorporated Electronic switch controlled by plural inputs
US5477184A (en) * 1992-04-15 1995-12-19 Sanyo Electric Co., Ltd. Fet switching circuit for switching between a high power transmitting signal and a lower power receiving signal
JP3473790B2 (ja) 1995-01-13 2003-12-08 ソニー株式会社 信号切換え装置及び複合信号切換え装置
JPH08204528A (ja) 1995-01-23 1996-08-09 Sony Corp スイツチ回路及び複合スイツチ回路
US5777530A (en) * 1996-01-31 1998-07-07 Matsushita Electric Industrial Co., Ltd. Switch attenuator
JPH1084267A (ja) 1996-09-06 1998-03-31 Hitachi Ltd Ｒｆスイッチおよび移動体通信装置
JP3539106B2 (ja) 1997-01-22 2004-07-07 松下電器産業株式会社 高周波用半導体スイッチ回路およびそれを用いた制御方法
JPH10242829A (ja) 1997-02-24 1998-09-11 Sanyo Electric Co Ltd スイッチ回路装置
JP3630545B2 (ja) 1998-02-16 2005-03-16 東芝マイクロエレクトロニクス株式会社 Ｒｆ信号スイッチ回路
EP1223634A3 (de) * 2000-12-26 2003-08-13 Matsushita Electric Industrial Co., Ltd. Hochfrequenzschalter, laminierter Hochfrequenzschalter, Hochfrequenz-Funkeinheit und Hochfrequenz-Schaltverfahren
JP3736356B2 (ja) 2001-02-01 2006-01-18 日本電気株式会社 高周波スイッチ回路
US6804502B2 (en) * 2001-10-10 2004-10-12 Peregrine Semiconductor Corporation Switch circuit and method of switching radio frequency signals
JP4009553B2 (ja) * 2002-05-17 2007-11-14 日本電気株式会社 高周波スイッチ回路
US6803680B2 (en) * 2002-09-13 2004-10-12 Mia-Com, Inc. Apparatus, methods, and articles of manufacture for a switch having sharpened control voltage
JP3790227B2 (ja) * 2003-04-16 2006-06-28 松下電器産業株式会社 高周波スイッチ回路

Also Published As

Publication number Publication date
EP1739837A1 (de) 2007-01-03
TWI294214B (en) 2008-03-01
US7173471B2 (en) 2007-02-06
CN1574630A (zh) 2005-02-02
EP1489744A1 (de) 2004-12-22
KR20040107425A (ko) 2004-12-20
EP1739837B1 (de) 2008-08-13
TW200511716A (en) 2005-03-16
CN1307799C (zh) 2007-03-28
JP2005006143A (ja) 2005-01-06
EP1739838A1 (de) 2007-01-03
US20050017786A1 (en) 2005-01-27

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP

8364 No opposition during term of opposition