JPS55123188A - Spectral bragg reflection mirror - Google Patents

Spectral bragg reflection mirror

Info

Publication number
JPS55123188A
JPS55123188A JP2996879A JP2996879A JPS55123188A JP S55123188 A JPS55123188 A JP S55123188A JP 2996879 A JP2996879 A JP 2996879A JP 2996879 A JP2996879 A JP 2996879A JP S55123188 A JPS55123188 A JP S55123188A
Authority
JP
Japan
Prior art keywords
layer
type gaas
spectral
reflection mirror
bragg reflection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2996879A
Other languages
Japanese (ja)
Inventor
Yutaka Uematsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP2996879A priority Critical patent/JPS55123188A/en
Publication of JPS55123188A publication Critical patent/JPS55123188A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To make it unnecessary to use a special container that maintains the temperature constant by reducing the temperature dependence of the Bragg condition, by using, as a material for a waveguide path layer constituting a spectral Bragg reflection mirror, a substance having different signs for refraction coefficient and temperature variation. CONSTITUTION:On an n-type GaAs substrate 16 are laminated and grown in succession an n-type GaAs layer 15, a p-type GaAs layer 14 which becomes a light waveguide layer, a p-type Ga0.7Al0.3As layer 13 and a p-type GaAs layer 12. Next, by vacuum evaporation, n side electrode 1 is fitted on the layer 12, and n side electrode 5 is fitted on the back side of the substrate 16. By operating photolithography and chemical etching, only the region II, which becomes a spectral Bragg reflection mirror, is retained and the rest are removed up to the surface of the layer 14. Subsequently, the exposed surface of the layer 14 is coated with a photoresist film, and by the two light flux interference method using an ultraviolet laser, interference stripes are formed on the surface of the photoresist film. By operating chemical etching, these interference stripes are transferred to the surface of layer 14. Next, silicate glass 18 containing TiO2 is evaporated on the resultant indented surface.
JP2996879A 1979-03-16 1979-03-16 Spectral bragg reflection mirror Pending JPS55123188A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2996879A JPS55123188A (en) 1979-03-16 1979-03-16 Spectral bragg reflection mirror

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2996879A JPS55123188A (en) 1979-03-16 1979-03-16 Spectral bragg reflection mirror

Publications (1)

Publication Number Publication Date
JPS55123188A true JPS55123188A (en) 1980-09-22

Family

ID=12290758

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2996879A Pending JPS55123188A (en) 1979-03-16 1979-03-16 Spectral bragg reflection mirror

Country Status (1)

Country Link
JP (1) JPS55123188A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57183090A (en) * 1981-05-02 1982-11-11 Agency Of Ind Science & Technol Semiconductor laser device
EP1610426A4 (en) * 2003-03-31 2006-07-26 Nippon Telegraph & Telephone Optical semiconductor device and optical semiconductor integrated circuit
JP2007294883A (en) * 2006-03-30 2007-11-08 Anritsu Corp Semiconductor laser device, semiconductor laser module and raman amplifier fabricated using the same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57183090A (en) * 1981-05-02 1982-11-11 Agency Of Ind Science & Technol Semiconductor laser device
JPH0373152B2 (en) * 1981-05-02 1991-11-20 Kogyo Gijutsuin
EP1610426A4 (en) * 2003-03-31 2006-07-26 Nippon Telegraph & Telephone Optical semiconductor device and optical semiconductor integrated circuit
US7471864B2 (en) 2003-03-31 2008-12-30 Nippon Telegraph And Telephone Corporation Optical semiconductor device and optical semiconductor integrated circuit
US7474817B2 (en) 2003-03-31 2009-01-06 Nippon Telegraph And Telephone Corporation. Optical semiconductor device and optical semiconductor integrated circuit
US7738520B2 (en) 2003-03-31 2010-06-15 Nippon Telegraph And Telephone Corporation Optical semiconductor device and optical semiconductor integrated circuit
JP2007294883A (en) * 2006-03-30 2007-11-08 Anritsu Corp Semiconductor laser device, semiconductor laser module and raman amplifier fabricated using the same

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