JPS5635488A - Semiconductor laser element - Google Patents
Semiconductor laser elementInfo
- Publication number
- JPS5635488A JPS5635488A JP11121379A JP11121379A JPS5635488A JP S5635488 A JPS5635488 A JP S5635488A JP 11121379 A JP11121379 A JP 11121379A JP 11121379 A JP11121379 A JP 11121379A JP S5635488 A JPS5635488 A JP S5635488A
- Authority
- JP
- Japan
- Prior art keywords
- film
- resonant
- lambdal
- resonant surface
- dielectric film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
Abstract
PURPOSE:To remarkably improve the operation lifetime of the laser element coating one of a resonant surface thereof with a dielectric film having approx. 1/4n of output light wavelength and the other of the resonant surface thereof with a dielectric film having approx. 1/2n of output light wavelength, where n represents the refractive index of the dielectric film. CONSTITUTION:The resonant for determining the lifetime of a semiconductor laser is deteriorated by the laser light irradiated from the resonant surface and O2 in the atmosphere by the optochemical reaction. The reaction is proceeded in proportion to the light energy in the vicinity of the resonant surface. When the resonant surface is accordingly coated with a dielectric film having smaller transmissivity than the refractive index of the crystal, the reflectivity on the resonant surface is varied with the thickness of the film, and when the thickness of the film is controlled, the internal energy can be reduced. The wavelength in the laser light is represented by lambdal and when an Al2O3 film having a refractive index n lambdal is deposited in a thickness of lambdal/4n on one of the resonant surfaces, the internal energy becomes zero on the other surface, and the film can be eliminated, but a film having lambdal/2n is formed thereon to supplement it. According to this configuration, the oxidation of the resonant surface can be prevented, and the operation lifetime of the laser element can be improved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11121379A JPS5635488A (en) | 1979-08-30 | 1979-08-30 | Semiconductor laser element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11121379A JPS5635488A (en) | 1979-08-30 | 1979-08-30 | Semiconductor laser element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5635488A true JPS5635488A (en) | 1981-04-08 |
Family
ID=14555385
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11121379A Pending JPS5635488A (en) | 1979-08-30 | 1979-08-30 | Semiconductor laser element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5635488A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6123381A (en) * | 1984-07-11 | 1986-01-31 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser and manufacture thereof |
US4749255A (en) * | 1985-12-09 | 1988-06-07 | American Telephone And Telegraph Company, At&T Bell Laboratories | Coating for optical devices |
KR100896370B1 (en) * | 2002-09-06 | 2009-05-08 | 엘지전자 주식회사 | Nitrides semiconductor laser diode |
-
1979
- 1979-08-30 JP JP11121379A patent/JPS5635488A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6123381A (en) * | 1984-07-11 | 1986-01-31 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser and manufacture thereof |
JPH0358549B2 (en) * | 1984-07-11 | 1991-09-05 | Nippon Telegraph & Telephone | |
US4749255A (en) * | 1985-12-09 | 1988-06-07 | American Telephone And Telegraph Company, At&T Bell Laboratories | Coating for optical devices |
KR100896370B1 (en) * | 2002-09-06 | 2009-05-08 | 엘지전자 주식회사 | Nitrides semiconductor laser diode |
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